APTC60AM18SCG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS Q1 VDSS = 600V RDSon = 18mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • G1 OUT - S1 Q2 G2 0/VBUS S2 VBUS 0/VBUS • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration OUT • S1 Benefits • • • • • G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 143 107 572 ±30 18 833 20 1 1800 Unit V A V mΩ W A July, 2006 S2 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC60AM18SCG – Rev 2 G1 Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated APTC60AM18SCG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V VGS = 10V, ID = 71.5A VGS = VDS, ID = 4mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 3 Min Typ 28 10.2 0.85 1036 mΩ V nA nF nC Test Conditions 84 µJ 3920 µJ 4824 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns 283 2630 www.microsemi.com Unit 30 Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 143A, R G = 1.2Ω IF = 120A VR = 133V di/dt = 400A/µs Max µA 21 1608 IF = 120A IF = 240A IF = 120A Unit 444 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 143A, R G = 1.2Ω VR=200V Max 100 1000 18 3.9 ±200 116 Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 143A R G = 1.2Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 2.1 VGS = 10V VBus = 300V ID = 143A Series diode ratings and characteristics IRM Min Tj = 25°C Tj = 125°C Typ Max 350 600 Tj = 125°C 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 Unit V µA A 1.15 V July, 2006 Symbol ns nC 2–7 APTC60AM18SCG – Rev 2 Electrical Characteristics APTC60AM18SCG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current Test Conditions VR=600V Min 600 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Typ Max 400 800 80 1.6 2.0 1600 8000 IF DC Forward Current VF Diode Forward Voltage IF = 80A QC Total Capacitive Charge IF = 80A, VR = 300V di/dt =2000A/µs 112 Q Total Capacitance f = 1MHz, VR = 200V 520 f = 1MHz, VR = 400V 400 Thermal and package characteristics Symbol Characteristic Min Transistor Series diode Parallel diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Unit V µA A 1.8 2.4 V nC pF Max 0.15 0.46 0.35 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTC60AM18SCG – Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTC60AM18SCG Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.16 0.14 0.9 0.12 0.7 0.1 0.5 0.08 0.06 0.3 0.04 0.1 0.02 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 540 800 6.5V 6V 500 400 5.5V 300 5V 200 4.5V 100 360 270 180 TJ=125°C 90 TJ=25°C 4V 0 T J=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.05 V GS=10V V GS=20V 1 7 DC Drain Current vs Case Temperature 160 RDS(on) vs Drain Current 1.1 Normalized to VGS =10V @ 71.5A 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 0.9 140 120 100 80 60 40 20 0 40 80 120 160 200 240 I D, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 0 4–7 APTC60AM18SCG – Rev 2 RDS(on) Drain to Source ON Resistance I D, Drain Current (A) VGS=15&10V 600 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 450 I D, DC Drain Current (A) ID, Drain Current (A) 700 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 limited by RDSon 100µs 100 1 ms 10 0.6 Single pulse TJ =150°C TC=25°C 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Ciss Coss 1000 Crss 100 10 1000 14 ID=143A TJ=25°C 12 10 VDS=120V V DS=300V 8 VDS=480V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 200 400 600 800 Gate Charge (nC) 1000 1200 July, 2006 0 100 Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) V GS=10V ID= 143A www.microsemi.com 5–7 APTC60AM18SCG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60AM18SCG APTC60AM18SCG Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=1.2Ω TJ=125°C L=100µH 200 150 VDS=400V RG=1.2Ω T J=125°C L=100µH 100 80 tr and t f (ns) 100 60 40 tr 50 20 td(on) 0 0 40 80 120 160 200 0 240 0 ID, Drain Current (A) 80 120 160 200 240 Switching Energy vs Gate Resistance 20 VDS=400V RG=1.2Ω TJ=125°C L=100µH E off Switching Energy (mJ) Switching Energy (mJ) 10 9 8 7 6 5 4 3 2 1 0 40 ID, Drain Current (A) Switching Energy vs Current Eon V DS =400V ID=143A T J=125°C L=100µH 15 Eoff 10 E on 5 0 0 40 80 120 160 200 ID, Drain Current (A) 240 Operating Frequency vs Drain Current 140 120 ZCS 100 ZVS 80 VDS=400V D=50% RG=1.2Ω T J=125°C T C=75°C 60 40 20 0 Hard switching 100 TJ=25°C 10 130 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 50 70 90 110 ID, Drain Current (A) 12.5 T J=150°C 0 30 2.5 5 7.5 10 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 I DR, Reverse Drain Current (A) 160 Frequency (kHz) tf www.microsemi.com 6–7 APTC60AM18SCG – Rev 2 td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60AM18SCG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.9 0.3 0.7 0.25 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 1600 TJ=25°C 120 TJ =75°C IR Reverse Current (µA) I F Forward Current (A) Reverse Characteristics Forward Characteristics 160 TJ=175°C 80 TJ =125°C 40 1400 1200 1000 0 0 0.5 1 1.5 2 2.5 3 TJ =175°C 3.5 VF Forward Voltage (V) TJ =125°C 800 TJ =75°C 600 400 TJ=25°C 200 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage C, Capacitance (pF) 3000 2500 2000 1500 1000 500 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTC60AM18SCG – Rev 2 1 July, 2006 0