APTM50SKM17 Buck chopper MOSFET Power Module VDSS = 500V RDSon = 17mW max @ Tj = 25°C ID = 180A @ Tc = 25°C Application · · AC and DC motor control Switched Mode Power Supplies Features · · · · G1 VBUS 0/VBUS OUT Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits S1 · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 180 135 720 ±30 17 1250 51 50 3000 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50SKM17 – Rev 1 May, 2004 Symbol VDSS APTM50SKM17 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 500µA Min 500 Typ Tj = 25°C Zero Gate Voltage Drain Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 90A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Tj = 125°C 3 Max Unit V 200 1000 17 5 ±200 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 180A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v nF nC 160 280 21 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 180A RG = 0.5W Rise Time Typ 28 5.6 0.36 560 38 ns 75 93 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 180A, RG = 0.5Ω 4140 µJ 3380 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 180A, RG = 0.5Ω 6224 µJ 4052 Diode ratings and characteristics VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 180A IF = 360A IF = 180A IF = 180A VR = 400V di/dt = 600A/µs IF = 180A VR = 400V di/dt = 600A/µs Min Tj = 125°C Typ 180 1.6 1.9 1.4 Tj = 25°C 130 Tj = 125°C 170 Tj = 25°C 660 Tj = 125°C 2760 Tc = 70°C Max Unit A 1.8 V ns nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTM50SKM17 – Rev 1 May, 2004 Symbol Characteristic Maximum Average Forward Current IF(AV) APTM50SKM17 Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case VISOL TJ TSTG TC Operating junction temperature range Storage Temperature Range Operating Case Temperature RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.1 0.32 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–6 APTM50SKM17 – Rev 1 May, 2004 Package outline APTM50SKM17 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) 7V 400 6.5V 6V 200 0 0 5V 5 10 15 20 VDS, Drain to Source Voltage (V) 400 300 TJ=25°C 200 100 TJ=125°C 0 25 TJ=-55°C 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.1 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 500 0 180 Normalized to VGS=10V @ 90A 1.05 ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.95 0.9 160 140 120 100 80 60 40 20 0 0 50 100 150 200 ID, Drain Current (A) 250 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4–6 APTM50SKM17 – Rev 1 May, 2004 ID, Drain Current (A) VGS=10&15V 600 8V 5.5V RDS(on) Drain to Source ON Resistance Transfert Characteristics 600 800 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 limited by RDSon 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100 us 100 1 ms 10 10 ms Single pulse TJ=150°C 100 ms 1 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 10000 Coss 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) VGS=10V ID=90A 14 ID=180A TJ=25°C 12 VDS=100V VDS=250V 10 VDS=400V 8 6 4 2 0 0 100 200 300 400 500 600 700 APT website – http://www.advancedpower.com Gate Charge (nC) 5–6 APTM50SKM17 – Rev 1 May, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature RDS(on), Drain to Source ON resistance (Normalized) APTM50SKM17 APTM50SKM17 Rise and Fall times vs Current 160 70 140 td(off) VDS=333V RG=0.5Ω TJ=125°C L=100µH 60 50 40 30 VDS=333V RG=0.5Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) 100 80 tr 60 40 20 20 0 10 40 80 120 160 200 240 280 40 80 ID, Drain Current (A) 280 20 VDS=333V RG=0.5Ω TJ=125°C L=100µH 10 8 6 Switching Energy (mJ) Switching Energy (mJ) 120 160 200 240 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 12 Eon Eoff 4 2 VDS=333V ID=180A TJ=125°C L=100µH 16 12 Eoff Eon 8 4 0 0 40 80 120 160 200 240 ID, Drain Current (A) 0 280 VDS=333V D=50% RG=0.5Ω TJ=125°C 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) IDR, Reverse Drain Current (A) 400 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Operating Frequency vs Drain Current 450 Frequency (kHz) tf Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50SKM17 – Rev 1 May, 2004 td(on) and td(off) (ns) Delay Times vs Current 80