ADPOW APTM50SKM17

APTM50SKM17
Buck chopper
MOSFET Power Module
VDSS = 500V
RDSon = 17mW max @ Tj = 25°C
ID = 180A @ Tc = 25°C
Application
·
·
AC and DC motor control
Switched Mode Power Supplies
Features
·
·
·
·
G1
VBUS
0/VBUS
OUT
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
S1
·
·
·
·
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
180
135
720
±30
17
1250
51
50
3000
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM50SKM17 – Rev 1 May, 2004
Symbol
VDSS
APTM50SKM17
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
VGS = 0V, ID = 500µA
Min
500
Typ
Tj = 25°C
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 500V
VGS = 0V,VDS = 400V
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 10V, ID = 90A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
Tj = 125°C
3
Max
Unit
V
200
1000
17
5
±200
mW
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 250V
ID = 180A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
nF
nC
160
280
21
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 180A
RG = 0.5W
Rise Time
Typ
28
5.6
0.36
560
38
ns
75
93
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 180A, RG = 0.5Ω
4140
µJ
3380
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 180A, RG = 0.5Ω
6224
µJ
4052
Diode ratings and characteristics
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 180A
IF = 360A
IF = 180A
IF = 180A
VR = 400V
di/dt = 600A/µs
IF = 180A
VR = 400V
di/dt = 600A/µs
Min
Tj = 125°C
Typ
180
1.6
1.9
1.4
Tj = 25°C
130
Tj = 125°C
170
Tj = 25°C
660
Tj = 125°C
2760
Tc = 70°C
Max
Unit
A
1.8
V
ns
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
2–6
APTM50SKM17 – Rev 1 May, 2004
Symbol Characteristic
Maximum Average Forward Current
IF(AV)
APTM50SKM17
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.1
0.32
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM50SKM17 – Rev 1 May, 2004
Package outline
APTM50SKM17
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
ID, Drain Current (A)
7V
400
6.5V
6V
200
0
0
5V
5
10
15
20
VDS, Drain to Source Voltage (V)
400
300
TJ=25°C
200
100
TJ=125°C
0
25
TJ=-55°C
2
4
6
8
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.1
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
500
0
180
Normalized to
VGS=10V @ 90A
1.05
ID, DC Drain Current (A)
VGS=10V
1
VGS=20V
0.95
0.9
160
140
120
100
80
60
40
20
0
0
50
100
150
200
ID, Drain Current (A)
250
25
50
75
100
125
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
150
4–6
APTM50SKM17 – Rev 1 May, 2004
ID, Drain Current (A)
VGS=10&15V
600
8V
5.5V
RDS(on) Drain to Source ON Resistance
Transfert Characteristics
600
800
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
25
50 75 100 125 150
Maximum Safe Operating Area
1000
1.2
limited by RDSon
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
1.0
0.9
0.8
0.7
100 us
100
1 ms
10
10 ms
Single pulse
TJ=150°C
100 ms
1
0.6
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
10000
Coss
1000
Crss
100
10
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
C, Capacitance (pF)
VGS=10V
ID=90A
14
ID=180A
TJ=25°C
12
VDS=100V
VDS=250V
10
VDS=400V
8
6
4
2
0
0
100 200 300 400 500 600 700
APT website – http://www.advancedpower.com
Gate Charge (nC)
5–6
APTM50SKM17 – Rev 1 May, 2004
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50SKM17
APTM50SKM17
Rise and Fall times vs Current
160
70
140
td(off)
VDS=333V
RG=0.5Ω
TJ=125°C
L=100µH
60
50
40
30
VDS=333V
RG=0.5Ω
TJ=125°C
L=100µH
120
tr and tf (ns)
td(on)
100
80
tr
60
40
20
20
0
10
40
80
120
160
200
240
280
40
80
ID, Drain Current (A)
280
20
VDS=333V
RG=0.5Ω
TJ=125°C
L=100µH
10
8
6
Switching Energy (mJ)
Switching Energy (mJ)
120 160 200 240
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
12
Eon
Eoff
4
2
VDS=333V
ID=180A
TJ=125°C
L=100µH
16
12
Eoff
Eon
8
4
0
0
40
80
120 160 200 240
ID, Drain Current (A)
0
280
VDS=333V
D=50%
RG=0.5Ω
TJ=125°C
350
300
250
200
150
100
50
0
20
40
60 80 100 120 140 160
ID, Drain Current (A)
IDR, Reverse Drain Current (A)
400
2.5
5
7.5
10
12.5
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
450
Frequency (kHz)
tf
Source to Drain Diode Forward Voltage
1000
TJ=150°C
100
TJ=25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM50SKM17 – Rev 1 May, 2004
td(on) and td(off) (ns)
Delay Times vs Current
80