APTM10DHM05 Asymmetrical - Bridge MOSFET Power Module Application VBUS Q1 • • • • CR3 G1 OUT2 S1 • CR2 G4 S4 0/VBUS • • - OUT1 VBUS • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration 0/VBUS Benefits S1 S4 G4 OUT2 • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 278 207 1100 ±30 5 780 100 50 3000 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM10DHM05– Rev 0 May, 2005 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Q4 OUT1 VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C APTM10DHM05 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C VGS = 10V, ID = 125A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz 4.5 2 Min VGS = 10V VBus = 50V ID = 250A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Typ 20 8 2.9 700 Max 200 1000 5 4 ±200 Unit Max Unit µA mΩ V nA nF 120 nC 360 80 Resistive Switching VGS = 15V VBus = 66V ID = 250A R G = 2.5 Ω Rise Time Typ 165 ns 280 135 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 250A, R G =2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 250A, R G = 2.5Ω 1.1 mJ 1.2 1.22 mJ 1.28 X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Symbol Characteristic VRRM Test Conditions Min Maximum Reverse Leakage Current VR=200V Tj = 25°C Tj = 125°C IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 80°C Diode Forward Voltage IF = 200A IF = 400A IF = 200A trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 200 Maximum Peak Repetitive Reverse Voltage IRM VF Typ IF = 200A VR = 133V di/dt =600A/µs V 350 600 Tj = 125°C Tj = 25°C 200 1 1.4 0.9 60 Tj = 125°C Tj = 25°C 110 400 Tj = 125°C 1680 APT website – http://www.advancedpower.com Unit µA A V ns nC 2-6 APTM10DHM05– Rev 0 May, 2005 Diode ratings and characteristics APTM10DHM05 Thermal and package characteristics Symbol Characteristic Min transistor diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.16 0.30 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3-6 APTM10DHM05– Rev 0 May, 2005 Package outline (dimensions in mm) APTM10DHM05 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 Single Pulse 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics 240 VGS =15V, 10V & 9V 1000 ID, Drain Current (A) 800 600 8V 400 7V 6V 200 0 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 160 120 80 T J=25°C 40 T J=125°C 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 125A 1.1 V GS=10V 1 VGS=20V 0.9 0.8 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 300 RDS(on) vs Drain Current ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance T J=-55°C 0 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTM10DHM05– Rev 0 May, 2005 ID, Drain Current (A) Low Voltage Output Characteristics 1200 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 125A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 0.6 limited by RDSon 100µs 100 1ms Single pulse TJ=150°C 10ms 10 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=250A TJ=25°C 14 V DS =20V 12 VDS=50V 10 V DS =80V 8 6 4 2 0 0 200 APT website – http://www.advancedpower.com 400 600 800 1000 Gate Charge (nC) 5-6 APTM10DHM05– Rev 0 May, 2005 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM10DHM05 APTM10DHM05 Delay Times vs Current Rise and Fall times vs Current 250 350 250 td(off) VDS=66V RG=2.5Ω T J=125°C L=100µH 200 150 td(on) 100 150 tf 100 0 0 0 100 200 300 I D, Drain Current (A) 400 0 100 200 300 ID, Drain Current (A) 400 Switching Energy vs Gate Resistance Switching Energy vs Current 5 VDS=66V RG=2.5Ω TJ=125°C L=100µH 2.5 2 Switching Energy (mJ) 3 Eoff 1.5 Eon 1 0.5 0 V DS =66V ID=200A T J=125°C L=100µH 4 3 Eoff Eon 2 1 0 100 200 300 400 0 5 I D, Drain Current (A) Operating Frequency vs Drain Current ZCS Hard switching 60 ZVS VDS=66V D=50% RG=2.5Ω T J=125°C T C=75°C 40 20 0 50 100 150 200 I D, Drain Current (A) 15 20 25 30 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 100 80 10 Gate Resistance (Ohms) 250 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTM10DHM05– Rev 0 May, 2005 0 Frequency (kHz) tr 50 50 Eon and Eoff (mJ) VDS=66V RG=2.5Ω TJ=125°C L=100µH 200 t r and tf (ns) t d(on) and td(off) (ns) 300