APTM100UM65S-AlN Single switch Series & parallel diodes MOSFET Power Module CR1 D S Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Q1 G S Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control D SK G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 145 110 580 ±30 78 3250 30 50 3200 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM100UM65S-AlN – Rev 1 July, 2005 SK VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C APTM100UM65S-AlN All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 72.5A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Typ 65 3 Min VGS = 10V VBus = 500V ID = 145A Typ 28.5 5.08 0.9 1068 Max 400 2 78 5 ±400 Unit µA mA mΩ V nA Max Unit nF 136 nC 692 VGS = 15V VBus = 500V ID = 145A R G = 0.75Ω 18 14 140 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75Ω 4.8 ns 55 mJ 2.9 8 mJ 3.9 X Eon includes diode reverse recovery Symbol Characteristic VRRM Test Conditions Maximum Reverse Leakage Current VR=200V IF(A V) Maximum Average Forward Current 50% duty cycle Diode Forward Voltage IF = 120A IF = 240A IF = 120A trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ Max 200 Maximum Peak Repetitive Reverse Voltage IRM VF Min IF = 120A VR = 133V di/dt = 400A/µs V Tj = 25°C Tj = 125°C 350 600 Tj = 125°C 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 T c = 80°C APT website – http://www.advancedpower.com Unit µA A 1.15 V ns nC 2–6 APTM100UM65S-AlN – Rev 1 July, 2005 Series diode ratings and characteristics APTM100UM65S-AlN Parallel diode ratings and characteristics Symbol Characteristic VRRM Test Conditions Min Maximum Reverse Leakage Current VR=1000V Tj = 25°C Tj = 125°C IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 80°C Diode Forward Voltage IF = 240A IF = 480A IF = 240A trr Reverse Recovery Time IF = 240A VR = 667V Qrr Reverse Recovery Charge di/dt = 800A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 280 350 3.04 14.4 Min Transistor Series diode Parallel diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I sol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Wt Package Weight 750 1000 Tj = 125°C Symbol Characteristic To Heatsink For teminals M6 M5 2500 -40 -40 -40 3 2 Unit V 240 2 2.2 1.7 Thermal and package characteristics Torque Max 1000 Maximum Peak Repetitive Reverse Voltage IRM VF Typ Typ µA A 2.5 V ns µC Max 0.038 0.46 0.23 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–6 APTM100UM65S-AlN – Rev 1 July, 2005 SP6 Package outline (dimensions in mm) APTM100UM65S-AlN Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.035 0.9 0.03 0.7 0.025 0.02 0.5 0.015 0.3 0.01 0.1 0.05 0.005 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 480 360 VGS =15, 10V 7V 280 ID, Drain Current (A) 6.5V 240 200 6V 160 120 80 5.5V 40 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 320 240 TJ=25°C 160 80 TJ =125°C 5V 0 0 5 10 15 20 25 30 0 ID, DC Drain Current (A) Normalized to VGS =10V @ 72.5A 1.3 1.2 1.1 VGS=10V 1 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 160 RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) RDS(on) Drain to Source ON Resistance TJ=-55°C 0 VGS=20V 0.9 0.8 120 80 40 0 0 80 160 240 ID, Drain Current (A) 320 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTM100UM65S-AlN – Rev 1 July, 2005 I D, Drain Current (A) 320 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=72.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by R DSon 100 1ms 10 10ms Single pulse TJ=150°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 14 ID=145A TJ=25°C 12 10 VDS=200V VDS=500V V DS =800V 8 6 4 2 0 0 300 APT website – http://www.advancedpower.com 600 900 1200 1500 Gate Charge (nC) 5–6 APTM100UM65S-AlN – Rev 1 July, 2005 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100UM65S-AlN APTM100UM65S-AlN Delay Times vs Current Rise and Fall times vs Current 100 160 V DS =670V RG =0.75Ω T J=125°C L=100µH 80 120 tr and tf (ns) V DS=670V RG=0.75Ω T J=125°C L=100µH 80 40 t d(on) 60 40 tr 20 0 0 50 94 138 182 226 270 50 94 ID, Drain Current (A) 10 Eon Switching Energy (mJ) Switching Energy (mJ) VDS=670V RG=0.75Ω TJ=125°C L=100µH 12 Eoff 8 6 4 2 0 V DS=670V ID=145A T J=125°C L=100µH 22 18 14 Eon 10 6 94 138 182 226 270 0 1 2 ID, Drain Current (A) 3 4 5 6 7 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current 300 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 250 Frequency (kHz) Eoff 2 50 ZVS ZCS 200 50 270 26 14 100 138 182 226 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 16 150 tf VDS=670V D=50% RG=0.75Ω T J=125°C T C=75°C Hard switching 0 15 35 55 75 95 115 ID, Drain Current (A) 135 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM100UM65S-AlN – Rev 1 July, 2005 td(on) and td(off) (ns) t d(off)