SPICE MODEL: DMMT5551 DMMT5551/DMMT5551S MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · · · · · Epitaxial Planar Die Construction A Complementary PNP Type Available (DMMT5401) Ideal for Medium Power Amplification and Switching SOT-26 Intrinsically Matched NPN Pair (Note 1) B C 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 1% Matched Tolerance, Available (Note 2) Available in Lead Free/RoHS Compliant Version (Note 5) H K Mechanical Data M Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ¾ ¾ 0.95 F ¾ ¾ 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 1.00 1.10 · · Case: SOT-26 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K · · · · Moisture Sensitivity: Level 1 per J-STD-020C L 0.35 0.55 0.40 Terminal Connections: See Diagram M 0.10 0.20 0.15 a 0° 8° ¾ · · · Marking (See Page 2): K4R & K4T J F D E1 Terminals: Solderable per MIL-STD-202, Method 208 E2 C2 L C1 E1 C2 Also Available in Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). Please see Ordering Information, Note 9, on Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) Maximum Ratings 1.30 All Dimensions in mm C1 B1 B2 DMMT5551 (K4R Marking Code) B1 E2 B2 DMMT5551S (K4T Marking Code) @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 3) IC 200 mA Power Dissipation (Note 3, 4) Pd 300 mW RqJA 417 K/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage and Temperature Range Notes: 1. Built with adjacent die from a single wafer. 2. Contact the Diodes, Inc. Sales department. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Maximum combined dissipation. 5. No purposefully added lead. DS30436 Rev. 4 - 2 1 of 3 www.diodes.com DMMT5551/DMMT5551S ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 180 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO 160 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 10mA, IC = 0 Collector Cutoff Current ICBO ¾ 50 nA mA VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C Emitter Cutoff Current IEBO ¾ 50 nA VEB = 4.0V, IC = 0 hFE 80 80 30 ¾ 250 ¾ ¾ IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.15 0.20 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ 1.0 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Output Capacitance Cobo ¾ 6.0 pF VCB = 10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hFE 50 250 ¾ Current Gain-Bandwidth Product fT 100 300 MHz VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz Noise Figure NF ¾ 8.0 dB OFF CHARACTERISTICS (Note 6) IC = 100mA, IE = 0 ON CHARACTERISTICS (Note 6) DC Current Gain (Note 7) SMALL SIGNAL CHARACTERISTICS Ordering Information Notes: VCE = 5.0V, IC = 200mA, RS = 1.0kW, f = 1.0kHz (Note 8) Device Packaging Shipping DMMT5551-7 SOT-26 3000/Tape & Reel DMMT5551S-7 SOT-26 3000/Tape & Reel 6. Short duration test pulse used to minimize self-heating effect. 7. The DC Current Gain, h FE, (matched at I C = 10mA and VCE = 5V) Collector Emitter Saturation Voltage, VCE(SAT), and Base Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%. 8. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 9. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DMMT5551-7-F. Marking Information E2 K4R C1 B1 C2 E1 C1 K4R = DMMT5551 Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September C2 YM E1 YM NEW PRODUCT Electrical Characteristics K4T B2 E2 B1 K4T = DMMT5551S Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September B2 Date Code Key Year 2003 2004 2005 2006 2007 2008 2009 Code P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30436 Rev. 4 - 2 2 of 3 www.diodes.com DMMT5551/DMMT5551S VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) IC = 10 IB 0.14 350 300 250 200 150 100 50 0.13 0.12 0 25 50 75 100 125 150 175 TA = 150°C 0.11 0.10 0.09 0.08 TA = 25°C 0.07 0.06 0.05 0 TA = -50°C 0.04 200 1 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V hFE, DC CURRENT GAIN (NORMALIZED) TA = 150°C 100 TA = 25°C TA = -50°C 10 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1000 VCE = 5V 0.9 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 0.4 TA = 150°C 0.3 0.2 1 10 1 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) NEW PRODUCT 0.15 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current DS30436 Rev. 4 - 2 3 of 3 www.diodes.com DMMT5551/DMMT5551S