DIODES DMMT5551-7

SPICE MODEL: DMMT5551
DMMT5551/DMMT5551S
MATCHED NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
NEW PRODUCT
Features
·
·
·
·
·
·
·
Epitaxial Planar Die Construction
A
Complementary PNP Type Available (DMMT5401)
Ideal for Medium Power Amplification and Switching
SOT-26
Intrinsically Matched NPN Pair (Note 1)
B C
2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
1% Matched Tolerance, Available (Note 2)
Available in Lead Free/RoHS Compliant Version (Note 5)
H
K
Mechanical Data
M
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
¾
¾
0.95
F
¾
¾
0.55
H
2.90
3.10
3.00
J
0.013 0.10
0.05
1.00
1.10
·
·
Case: SOT-26
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
L
0.35
0.55
0.40
Terminal Connections: See Diagram
M
0.10
0.20
0.15
a
0°
8°
¾
·
·
·
Marking (See Page 2): K4R & K4T
J
F
D
E1
Terminals: Solderable per MIL-STD-202, Method 208
E2
C2
L
C1
E1
C2
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Copper leadframe). Please see Ordering
Information, Note 9, on Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
Maximum Ratings
1.30
All Dimensions in mm
C1
B1
B2
DMMT5551
(K4R Marking Code)
B1
E2
B2
DMMT5551S
(K4T Marking Code)
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous (Note 3)
IC
200
mA
Power Dissipation (Note 3, 4)
Pd
300
mW
RqJA
417
K/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage and Temperature Range
Notes:
1. Built with adjacent die from a single wafer.
2. Contact the Diodes, Inc. Sales department.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Maximum combined dissipation.
5. No purposefully added lead.
DS30436 Rev. 4 - 2
1 of 3
www.diodes.com
DMMT5551/DMMT5551S
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
180
¾
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
160
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10mA, IC = 0
Collector Cutoff Current
ICBO
¾
50
nA
mA
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
Emitter Cutoff Current
IEBO
¾
50
nA
VEB = 4.0V, IC = 0
hFE
80
80
30
¾
250
¾
¾
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.15
0.20
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
¾
1.0
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Output Capacitance
Cobo
¾
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hFE
50
250
¾
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 10mA,
f = 100MHz
Noise Figure
NF
¾
8.0
dB
OFF CHARACTERISTICS (Note 6)
IC = 100mA, IE = 0
ON CHARACTERISTICS (Note 6)
DC Current Gain (Note 7)
SMALL SIGNAL CHARACTERISTICS
Ordering Information
Notes:
VCE = 5.0V, IC = 200mA,
RS = 1.0kW, f = 1.0kHz
(Note 8)
Device
Packaging
Shipping
DMMT5551-7
SOT-26
3000/Tape & Reel
DMMT5551S-7
SOT-26
3000/Tape & Reel
6. Short duration test pulse used to minimize self-heating effect.
7. The DC Current Gain, h FE, (matched at I C = 10mA and VCE = 5V) Collector Emitter Saturation Voltage, VCE(SAT), and Base
Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%.
8. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
9. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DMMT5551-7-F.
Marking Information
E2
K4R
C1
B1
C2
E1
C1
K4R = DMMT5551 Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
C2
YM
E1
YM
NEW PRODUCT
Electrical Characteristics
K4T
B2
E2
B1
K4T = DMMT5551S Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
B2
Date Code Key
Year
2003
2004
2005
2006
2007
2008
2009
Code
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30436 Rev. 4 - 2
2 of 3
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DMMT5551/DMMT5551S
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
IC
= 10
IB
0.14
350
300
250
200
150
100
50
0.13
0.12
0
25
50
75
100
125
150
175
TA = 150°C
0.11
0.10
0.09
0.08
TA = 25°C
0.07
0.06
0.05
0
TA = -50°C
0.04
200
1
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
1.0
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE = 5V
hFE, DC CURRENT
GAIN (NORMALIZED)
TA = 150°C
100
TA = 25°C
TA = -50°C
10
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
1000
VCE = 5V
0.9
TA = -50°C
0.8
0.7
TA = 25°C
0.6
0.5
0.4
TA = 150°C
0.3
0.2
1
10
1
100
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs
Collector Current
1000
fT, GAIN BANDWIDTH PRODUCT (MHz)
NEW PRODUCT
0.15
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current
DS30436 Rev. 4 - 2
3 of 3
www.diodes.com
DMMT5551/DMMT5551S