IRF IRG4PC30UPBF

PD - 94923
IRG4PC30UPbF
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Lead-Free
VCES = 600V
VCE(on) typ. = 1.95V
G
@VGE = 15V, IC = 12A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
23
12
92
92
± 20
10
100
42
-55 to + 150
V
A
V
mJ
W
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.24
–––
6 (0.21)
1.2
–––
40
–––
Units
°C/W
g (oz)
1
12/30/03
IRG4PC30UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600 —
Emitter-to-Collector Breakdown Voltage „ 18
—
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
0.63
— 1.95
Collector-to-Emitter Saturation Voltage
— 2.52
VCE(ON)
— 2.09
VGE(th)
Gate Threshold Voltage
3.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
-13
gfe
Forward Transconductance …
3.1
8.6
—
—
ICES
Zero Gate Voltage Collector Current
—
—
—
—
IGES
Gate-to-Emitter Leakage Current
—
—
V(BR)CES
V(BR)ECS
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0A
—
V/°C VGE = 0V, IC = 1.0mA
2.1
IC = 12A
VGE = 15V
—
IC = 23A
See Fig.2, 5
V
—
IC = 12A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100 V, IC = 12A
250
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
E ts
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
50
8.1
18
17
9.6
78
97
0.16
0.20
0.36
20
13
180
140
0.73
13
1100
73
14
Max. Units
Conditions
75
IC = 12A
12
nC
VCC = 400V
See Fig.8
27
VGE = 15V
—
—
TJ = 25°C
ns
120
IC = 12A, VCC = 480V
150
VGE = 15V, RG = 23Ω
—
Energy losses include "tail"
—
mJ
See Fig. 10, 11, 13, 14
0.50
—
TJ = 150°C,
—
IC = 12A, VCC = 480V
ns
—
VGE = 15V, RG = 23Ω
—
Energy losses include "tail"
—
mJ See Fig. 13, 14
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a)
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC30UPbF
40
Load Current (A)
For both:
Triangular wave:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 24W
30
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
20
10
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
100
TJ = 25°C
TJ = 150°C
10
1
VGE = 15V
20µs PULSE WIDTH A
0.1
0.1
1
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
100
TJ = 150°C
10
TJ = 25°C
1
V CC = 10V
5µs PULSE WIDTH A
0.1
5
6
7
8
9
10
11
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
25
3.0
V GE = 15V
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A
IRG4PC30UPbF
20
15
10
5
A
0
25
50
75
100
125
V GE = 15V
80µs PULSE WIDTH
IC = 24A
2.5
IC = 12A
2.0
I C = 6.0A
A
1.5
-60
150
-40
-20
0
20
40
60
80
100 120 140 160
TJ , Junction Temperature (°C)
TC , Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.01
0.00001
t
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC30UPbF
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
1600
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
2000
Cies
1200
800
Coes
400
Cres
16
12
A
0
1
10
VCE = 400V
I C = 12A
8
4
A
0
100
0
10
VCE, Collector-to-Emitter Voltage (V)
10
= 480V
= 15V
= 25°C
= 12A
0.4
0.3
A
0.2
0
10
20
30
40
50
R G , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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40
50
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC
VGE
TJ
IC
30
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.5
20
60
RG = 23 Ω
V GE = 15V
V CC = 480V
IC = 24A
1
I C = 12A
I C = 6.0A
A
0.1
-60
-40
-20
0
20
40
60
80
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4PC30UPbF
RG
TJ
V CC
V GE
1.2
1000
= 23 Ω
= 150°C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
1.6
0.8
0.4
A
0.0
0
10
20
I C , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
30
VGE
= 20V
GE
TJ = 125°C
100
SAFE OPERATING AREA
10
1
0.1
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4PC30UPbF
L
D.U.T.
VC *
50V
RL =
0 - 480V
1000V
c
480V
4 X IC@ 25°C
480µF
960V
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Current Test Circuit
Load Test Circuit
IC
L
Driver*
D.U.T.
VC
Test Circuit
50V
1000V
c
Fig. 14a - Switching Loss
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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7
IRG4PC30UPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
-D-
3.65 (.143)
3.55 (.140)
15.90 (.626)
15.30 (.602)
-B-
-A-
0.25 (.010) M D B M
2.50 (.089)
1.50 (.059)
4
5.50 (.217)
20.30 (.800)
19.70 (.775)
2X
1
2
5.30 (.209)
4.70 (.185)
NOTES:
5.50 (.217)
4.50 (.177)
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
3
-C-
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
4.30 (.170)
3.70 (.145)
0.80 (.031)
3X 0.40 (.016)
1.40 (.056)
3X 1.00 (.039)
0.25 (.010) M
2.60 (.102)
2.20 (.087)
C A S
3.40 (.133)
3.00 (.118)
LEAD ASSIGNMENTS
Hexfet
IGBT
1 -LEAD
GateASSIGNMENTS
1 - Gate
1 - GATE2 - Collector
2 - Drain
2 - DRAIN
3 - Source
3 - Emitter
3 - SOURCE
4 - Drain
4 - DRAIN4 - Collector
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30
WIT H ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
INT ERNATIONAL
RECT IFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
IRFPE30
56
035H
57
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/