APTGT30DSK60T3G Dual Buck chopper Trench + Field Stop IGBT® Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q2 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design • High level of integration • Internal thermistor for temperature monitoring 10 22 7 23 8 CR1 CR2 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • Each leg can be easily paralleled to achieve a single buck of twice the current capability. • RoHS Compliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 50 30 60 ±20 90 60A @ 550V Unit V A June, 2006 11 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT30DSK60T3G – Rev 1, Q1 18 19 VCES = 600V IC = 30A @ Tc = 80°C APTGT30DSK60T3G All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 30A Tj = 150°C VGE = VCE , IC = 400µA VGE = 20V, VCE = 0V Test Conditions VRRM IRM IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Min Typ Max Unit 250 1.9 µA 6.5 300 V nA Max Unit 1600 110 50 110 45 200 40 pF ns 50 ns 250 60 0.16 0.3 0.7 1.05 Typ mJ mJ Max 600 VR=600V IF = 30A VGE = 0V IF = 30A VR = 300V di/dt =1800A/µs www.microsemi.com V 120 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 30A R G = 10Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 30A R G = 10Ω Tj = 25°C VGE = ±15V VBus = 300V Tj = 150°C IC = 30A Tj = 25°C R G = 10Ω Tj = 150°C Test Conditions Typ 1.5 1.7 5.8 VGE = 0V VCE = 25V f = 1MHz Chopper diode ratings and characteristics Symbol Characteristic Min Unit V Tj = 25°C Tj = 150°C 250 500 Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 30 1.6 1.5 100 150 1.5 Tj = 150°C Tj = 25°C Tj = 150°C 3.1 0.34 0.75 µA A 2 V ns June, 2006 Symbol Characteristic µC mJ 2-5 APTGT30DSK60T3G – Rev 1, Electrical Characteristics APTGT30DSK60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 1.6 2.45 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 175 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT30DSK60T3G – Rev 1, 28 17 1 June, 2006 SP3 Package outline (dimensions in mm) APTGT30DSK60T3G Typical Performance Curve Output Characteristics (V GE=15V) 60 Output Characteristics 60 TJ=25°C VGE=19V TJ = 150°C 50 50 VGE =13V 40 T J=150°C IC (A) IC (A) TJ=125°C 40 30 VGE =15V 30 20 20 10 10 VGE =9V T J=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 3 0 2 1.5 E (mJ) 40 IC (A) 1.5 2 V CE (V) VCE = 300V VGE = 15V RG = 10Ω T J = 150°C T J=25°C 50 1 2.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 60 0.5 30 Eoff Er 1 TJ =125°C 20 0.5 TJ=150°C Eon 10 TJ =25°C 0 5 6 7 8 9 0 10 11 0 12 10 20 Switching Energy Losses vs Gate Resistance VCE = 300V VGE =15V IC = 30A TJ = 150°C 50 60 70 Eon 60 50 Eoff IC (A) E (mJ) 1.5 40 Reverse Bias Safe Operating Area 2.5 2 30 IC (A) VGE (V) 1 40 30 20 0.5 Er VGE =15V TJ =150°C RG=10Ω 10 Eon 0 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 0 100 200 300 400 V CE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 IGBT 0.9 1.2 1 0.8 0.6 0.4 June, 2006 1.4 0.7 0.5 0.3 0.1 Single Pulse 0.2 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT30DSK60T3G – Rev 1, Thermal Impedance (°C/W) 1.8 APTGT30DSK60T3G Forward Characteristic of diode 60 V CE =300V D=50% RG=10Ω T J=150°C 100 ZCS 80 ZVS 50 40 T c=85°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 30 T J=125°C 20 40 20 10 Hard switching 0 0 10 TJ=150°C T J=25°C 0 20 30 0 40 0.4 IC (A) 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 3 Diode 2.5 2 0.9 0.7 1.5 0.5 1 0.3 0.5 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT30DSK60T3G – Rev 1, June, 2006 Rectangular Pulse Duration in Seconds