APTGT200DU60TG VCES = 600V IC = 200A @ Tc = 80°C Dual common source Trench + Field Stop IGBT® Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 Q2 G1 G2 E1 E2 NTC2 E2 C1 E C2 C2 E1 E2 NTC2 G1 G2 NTC1 Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 290 200 400 ±20 625 Tj = 150°C 400A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A V W June, 2006 G2 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT200DU60TG – Rev 1 E NTC1 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring APTGT200DU60TG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 200A Tj = 150°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Test Conditions VR=600V IF = 200A VGE = 0V IF = 200A VR = 300V di/dt =2200A/µs Er 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A R G = 2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 200A R G = 2Ω Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 200A Tj = 25°C R G = 2Ω Tj = 150°C Fall Time Td(on) Tr Min Reverse Recovery Energy www.microsemi.com 1.5 1.7 5.8 Typ 12.3 0.8 0.4 115 45 225 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V nF ns 55 130 50 ns 300 70 1 1.8 5.7 7 Min 600 Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Typ Typ mJ mJ Max 250 500 200 1.6 1.5 130 225 9 19 2.3 4.7 Unit V µA A 2 V ns µC June, 2006 Symbol Characteristic mJ 2-6 APTGT200DU60TG – Rev 1 Electrical Characteristics APTGT200DU60TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.24 0.4 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 2.5 °C/W V 175 125 100 4.7 160 °C N.m g June, 2006 SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT200DU60TG – Rev 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APTGT200DU60TG Typical Performance Curve Output Characteristics (VGE =15V) Output Characteristics 400 400 T J=25°C 350 300 TJ=125°C 250 TJ=150°C IC (A) IC (A) 300 200 150 100 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 14 350 1 300 10 E (mJ) 250 200 TJ=125°C 2.5 3 3.5 Eoff 8 Er 6 4 100 TJ=150°C 2 50 T J=25°C 0 5 6 7 8 9 Eon 0 10 11 0 12 50 100 150 200 250 300 350 400 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance VCE = 300V VGE =15V IC = 200A T J = 150°C 12 Reverse Bias Safe Operating Area 500 400 Eoff IF (A) 16 E (mJ) 1.5 2 V CE (V) VCE = 300V VGE = 15V RG = 2Ω TJ = 150°C 12 T J=25°C 150 0.5 Energy losses vs Collector Current Transfert Characteristics 400 IC (A) VGE=9V 50 T J=25°C 0 VGE=15V 200 100 0 VGE =13V 250 150 50 VGE=19V T J = 150°C 350 Eon 8 300 200 4 Eon VGE =15V T J=150°C RG=2Ω 100 Er 0 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.15 IGBT 0.7 June, 2006 0.2 0.9 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-6 APTGT200DU60TG – Rev 1 Thermal Impedance (°C/W) 0.25 APTGT200DU60TG Forward Characteristic of diode 400 100 ZVS ZCS 80 VCE=300V D=50% RG=2Ω TJ =150°C 350 300 250 Tc=85°C IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 200 TJ =125°C 150 40 100 Hard switching 20 T J=150°C 50 TJ =25°C 0 0 0 50 100 150 IC (A) 200 0 250 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.45 0.4 Diode 0.9 0.35 0.3 0.25 0.7 0.5 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-6 APTGT200DU60TG – Rev 1 June, 2006 Rectangular Pulse Duration in Seconds www.microsemi.com 6-6 APTGT200DU60TG – Rev 1 June, 2006 APTGT200DU60TG