DU28120T RF Power MOSFET Transistor 120W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices ABSOLUTE MAXIMUM RATINGS AT 25° C Symbol Rating Units Drain-Source Voltage Parameter VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 24 A Power Dissipation PD 269 W Junction Temperature TJ 200 °C Storage Temperature TSTG -55 to +150 °C θJC 0.65 °C/W Thermal Resistance LETTER TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 4.0 - j8.0 3.4 + j2.4 50 1.0 - j2.5 2.2 +j1.3 100 1.0 - j0.5 2.2 + j0.0 VDD = 28V, IDQ = 600mA, POUT = 120 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol MILLIMETERS INCHES DIM MIN MAX MIN MAX A 24.64 24.89 .970 .980 B 18.29 18.54 .720 .730 C 21.21 21.97 .835 .865 D 12.60 12.85 .496 .506 E 6.22 6.48 .245 .255 F 3.81 4.06 .150 .160 G 5.33 5.59 .210 .220 H 5.08 5.33 .200 .210 J 3.05 3.30 .120 .130 K 2.29 2.54 .90 .100 L 4.06 4.57 .160 .180 M 6.68 7.49 .263 .295 N .10 .15 .004 .006 Min Max Units BVDSS 65 - V VGS = 0.0 V , IDS = 3.0 mA Drain-Source Leakage Current IDSS - 6.0 mA VGS = 28.0 V , VGS = 0.0 V Gate-Source Leakage Current IGSS - 6.0 µA VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 600.0 mA Forward Transconductance GM 3.0 - S VDS = 10.0 V , IDS = 6000.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 270 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 240 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 48 pF VDS = 28.0 V , F = 1.0 MHz Power Gain GP 13 - dB VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz Drain Efficiency ŋD 60 - % VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz VSWR-T - 30:1 - VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz Drain-Source Breakdown Voltage Gate Threshold Voltage Load Mismatch Tolerance Test Conditions 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. DU28120T RF Power MOSFET Transistor 120W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Typical Broadband Performance Curves GAIN VS FREQUENCY VDD=28 V IDQ=600 mA POUT=120 W 70 EFFICIENCY (%) GAIN (dB) 30 EFFICIENCY VS FREQUENCY VDD=28 V IDQ=600 mA POUT=120 W 20 65 60 55 10 0 50 150 0 200 25 FREQUENCY (MHz) 150 POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =50 mA 100MHz 30MHz 140 175MHz 100 50 0 0.1 0.2 0.3 1 2 3 4 5 POWER INPUT (W) 100 150 175 200 FREQUENCY (MHz) POWER OUTPUT (W) POWER OUTPUT (W) 200 50 6 7 8 9 POWER OUTPUT VS SUPPLY VOLTAGE F=175 MHz IDQ =600 mA PIN =3.0 W 120 100 80 60 40 20 16 20 25 SUPPLY VOLTAGE (V) 30 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. 33 DU28120T RF Power MOSFET Transistor 120W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant TEST FIXTURE SCHEMATIC 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.