UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Released; RoHS Compliant 20 Jan 11 Package Outline Features N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor 100 MHz to 500 MHz operation ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 1.4 A Power Dissipation PD 14.4 W Junction Temperature TJ 200 °C Storage Temperature TSTG -55 to +150 °C θJC 12.1 °C/W Thermal Resistance TYPICAL DEVICE IMPEDANCES F (MHz) ZIN (Ω) ZLOAD (Ω) 100 15.0-j80.0 35.0+j55.0 300 8.0-j43.0 29.0+j40.0 500 4.0-j29.0 28.0+j29.0 VDD=28V, IDQ=50 mA, POUT=100.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground ELECTRICAL CHARACTERISTICS AT 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Symbol Min Max Units BVDSS 65 - V VGS = 0.0 V , IDS = 2.0 mA Test Conditions IDSS - 1.0 mA VGS = 28.0 V , VGS = 0.0 V IGSS - 1.0 µA VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 10.0 mA Forward Transconductance GM 80 - S VDS = 10.0 V , IDS 1.0 mA , ∆ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 7.0 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 5 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 2.4 pF VDS = 28.0 V , F = 1.0 MHz GP 10 - dB VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W F =500 MHz ŋD 50 - % VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W F =500 MHz VSWR-T - 20:1 - VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W F =500MHz Gate Threshold Voltage Power Gain Drain Efficiency Load Mismatch Tolerance 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Released; RoHS Compliant 20 Jan 11 Typical Broadband Performance Curves CAPACITANCES VS VOLTAGE F=1.0MHz 7 8 POPWER OUTPUT (W) CAPACTANCES (pF) 6 CISS 5 4 COSS 3 2 POWER OUTPUT VS VOLTAGE PIN=0.4 W IDQ=5.0 mA POUT=500 W CRSS 1 7 6 5 4 3 2 1 0 0 5 15 10 25 20 5 30 10 15 VDS(V) EFFICIENCY (W) GAIN (dB) 20 10 200 400 300 35 55 50 45 100 500 200 FREQUENCY (MHz) 7 POWER OUTPUT (W) 30 EFFICIENCY VS FREQUENCY VDD=28V IDQ =50 mA POUT =5.0 W 60 30 100 25 VDS(V) GAIN VS FREQUENCY VDD =28 V POUT=5.0 W IDQ =50 mA 0 20 6 300 400 FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =50 mA 100MHz 300MHz 500MHz 5 4 3 2 1 0 0.025 0.05 0.1 0.15 0.2 2 0.25 0.3 POWER INPUT (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. 500 UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Released; RoHS Compliant 20 Jan 11 TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.