FAIRCHILD 2N7002T

2N7002T
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
D
S
G
SOT - 523F
Marking : AA
Absolute Maximum Ratings *
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Units
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage RGS ≤ 1.0MΩ
60
V
VGSS
Gate-Source Voltage
±20
±40
V
ID
Drain Current
115
73
800
mA
150
°C
-55 to +150
°C
Value
Units
Continuous
Pulsed
Continuous
Continuous @ 100°C
Pulsed
TJ
Junction Temperature
TSTG
Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
PD
Total Device Dissipation
Derating above TA = 25°C
200
1.6
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient *
625
°C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
www.fairchildsemi.com
1
2N7002T — N-Channel Enhancement Mode Field Effect Transistor
October 2007
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Condition
MIN
TYP
MAX
Units
60
78
-
V
Off Characteristics (Note1)
BVDSS
Drain-Source Breakdown Voltage
VGS= 0V, ID=10uA
IDSS
Zero Gate Voltage Drain Current
VDS= 60V, VGS= 0V
VDS= 60V, VGS= 0V, @TC = 125°C
-
0.001
7
1.0
500
uA
IGSS
Gate-Body Leakage
VGS= ±20V, VDS= 0V
-
0.2
±10
nA
1.0
1.76
2.0
V
-
1.6
2.53
7.5
13.5
Ω
On Characteristics (Note1)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Satic Drain-Source On-Resistance VGS = 5V, ID = 0.05A,
VGS = 10V, ID = 0.5A, @Tj = 125°C
VDS = VGS, ID = 250uA
ID(ON)
On-State Drain Current
VGS = 10V, VDS= 7.5V
0.5
1.43
-
A
gFS
Forward Transconductance
VDS = 10V, ID = 0.2A
80
356.5
-
mS
-
37.8
50
pF
-
12.4
25
pF
-
6.5
7.0
pF
-
5.85
20
-
12.5
20
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS= 0V, f = 1.0MHz
Switching Characteristics
tD(ON)
Turn-On Delay Time
tD(OFF)
Turn-Off Delay Time
VDD = 30V, ID = 0.2A, VGEN= 10V
RL = 150Ω, RGEN = 25Ω
ns
Note1 : Short duration test pulse used to minimize self-heating effect.
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
www.fairchildsemi.com
2
2N7002T — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
3.0
RDS(on), (Ω)
DRANI-SOURCE ON-RESISTANCE
ID. DRAIN-SOURCE CURRENT(A)
1.6
VGS = 10V
1.4
1.2
5V
1.0
4V
0.8
0.6
0.4
3V
0.2
VGS = 3V
4V
4.5V
5V
6V
2.5
2.0
10V
9V
1.5
8V
7V
2V
1.0
0.0
0.0
0
1
2
3
4
5
6
7
8
9
10
0.2
0.4
Figure 3. On-Resistance Variation with
Temperature
RDS(on), (Ω)
DRANI-SOURCE ON-RESISTANCE
RDS(on) (Ω)
DRANI-SOURCE ON-RESISTANCE
VGS = 10V
ID = 500 mA
2.0
1.5
1.0
2.5
ID = 500 mA
2.0
ID = 50 mA
1.5
1.0
0.5
-50
0
50
100
2
150
4
o
1.0
o
TJ = -25 C
o
0.8
150 C
o
25 C
o
125 C
0.6
o
75 C
0.4
0.2
4
10
5
2.5
VGS = VDS
2.0
ID = 1 mA
ID = 0.25 mA
1.5
1.0
-50
0.0
3
8
Figure 6. Gate Threshold Variation with
Temperature
Vth, Gate-Source Threshold Voltage (V)
Figure 5. Transfer Characteristics
VDS = 10V
6
VGS. GATE-SOURCE VOLTAGE (V)
TJ. JUNCTION TEMPERATURE( C)
ID. DRAIN-SOURCE CURRENT(A)
1.0
3.0
2.5
6
0
50
100
150
o
TJ. JUNCTION TEMPERATURE( C)
VGS. GATE-SOURCE VOLTAGE (V)
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
0.8
Figure 4. On-Resistance Variation with
Gate-Source Voltage
3.0
2
0.6
ID. DRAIN-SOURCE CURRENT(A)
VDS. DRAIN-SOURCE VOLTAGE (V)
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3
2N7002T — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
Figure 7. Reverse Drain Current Variation with
Diode Forward Voltage and Temperature
Figure 8. Power Derating
250
o
150 C
PC[mW], POWER DISSIPATION
IS Reverse Drain Current, [mA]
VGS = 0 V
100
o
25 C
10
o
-55 C
1
0.0
0.2
0.4
0.6
0.8
150
100
50
0
1.0
0
VSD, Body Diode Forward Voltage [V]
25
50
75
100
125
150
175
o
Ta[ C], AMBIENT TEMPERATURE
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
200
www.fairchildsemi.com
4
2N7002T — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
2N7002T — N-Channel Enhancement Mode Field Effect Transistor
Package Dimensions
SOT-523F
Dimensions in Millimeters
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
www.fairchildsemi.com
5
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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the right to make changes at any time without notice to improve design.
Obsolete
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
www.fairchildsemi.com
6
2N7002T N-Channel Enhancement Mode Field Effect Transistor
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