2N7002V / 2N7002VA
N-Channel Enhancement Mode Field Effect Transistor
Features
•
•
•
•
•
•
•
•
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free by Design/RoHS Compliant
D2
(Pin4)
S2
SOT-563F
* Pin1 and Pin4 are exchangeable.
G1
S1
D2
G2
D1
G2
2N7002V
S1
G1
S2
D1
2N7002VA
Ordering Information
Part Number
Top Mark
Package
Packing Method
2N7002V
AB
SOT-563F 6L
Tape and Reel
2N7002VA
AC
SOT-563F 6L
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS ≤ 1.0 MΩ)
VGSS
ID
TJ, TSTG
Gate-Source Voltage
Drain Current
Junction and Storage Temperature Range
© 2007 Fairchild Semiconductor Corporation
2N7002V / 2N7002VA Rev. 1.2
Value
Unit
60
V
60
V
Continuous
±20
Pulsed
±40
Continuous
280
mA
Pulsed
1.5
A
-55 to +150
°C
V
www.fairchildsemi.com
2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor
January 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Value
Unit
Total Device Dissipation
250
mW
Derate Above TA = 25°C
2.0
mW/°C
Thermal Resistance, Junction-to-Ambient(1)
500
°C/W
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
60
78
Max.
Unit
Off Characteristics(2)
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 10 μA
VDS = 60 V, VGS = 0 V
0.001
1.0
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V,
TJ = 125°C
7
500
IGSS
Gate-Body Leakage
VGS = ±20 V, VDS = 0 V
0.2
±100
nA
1.76
2.50
V
1.6
7.5
V
μA
On Characteristics(2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
1.00
VGS = 5 V, ID = 0.05 A
RDS(ON)
ID(ON)
gFS
Static Drain-Source On-Resistance
VGS = 10 V, ID = 0.5 A
2.0
VGS = 10 V, ID = 0.5 A,
TJ = 125°C
On-State Drain Current
VGS = 10 V, VDS = 7.5 V
Forward Transconductance
VDS = 10 V, ID = 0.2 A
2.53
Ω
13.5
1.50
1.43
A
80
356.5
mS
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS= 0 V,
f = 1.0 MHz
37.8
50
pF
12.4
25
pF
6.5
7
pF
5.85
20
ns
12.5
20
ns
Switching Characteristics
tD(ON)
Turn-On Delay Time
tD(OFF)
Turn-Off Delay Time
VDD = 30 V, ID = 0.2 A,
VGEN = 10 V, RL = 150 Ω,
RGEN = 25 Ω
Note:
2. Short duration test pulse used to minimize self-heating effect.
© 2007 Fairchild Semiconductor Corporation
2N7002V / 2N7002VA Rev. 1.2
www.fairchildsemi.com
2
2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor
Thermal Characteristics
3.0
RDS(on), :
DRANI-SOURCE ON-RESISTANCE
ID. DRAIN-SOURCE CURRENT(A)
1.6
VGS = 10V
1.4
1.2
5V
1.0
4V
0.8
0.6
0.4
3V
0.2
VGS = 3V
4V
4.5V
5V
6V
2.5
2.0
10V
9V
1.5
8V
7V
2V
0.0
0
1
2
3
4
5
6
7
8
9
1.0
0.0
10
0.2
0.4
VDS. DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), :
DRANI-SOURCE ON-RESISTANCE
RDS(on) :
DRANI-SOURCE ON-RESISTANCE
1.0
3.0
VGS = 10V
ID = 500 mA
2.5
2.0
1.5
1.0
0.5
-50
2.5
ID = 500 mA
2.0
ID = 50 mA
1.5
1.0
0
50
100
150
2
4
o
Vth, Gate-Source Threshold Voltage (V)
1.0
o
TJ = -25 C
o
0.8
150 C
o
25 C
o
125 C
0.6
o
75 C
0.4
0.2
0.0
3
4
5
10
2.5
VGS = VDS
2.0
ID = 1 mA
ID = 0.25 mA
1.5
1.0
-50
6
0
50
100
150
o
VGS. GATE-SOURCE VOLTAGE (V)
TJ. JUNCTION TEMPERATURE( C)
Figure 6. Gate Threshold Variation with Temperature
Figure 5. Transfer Characteristics
© 2007 Fairchild Semiconductor Corporation
2N7002V / 2N7002VA Rev. 1.2
8
Figure 4. On-Resistance Variation
with Gate-Source Voltage
Figure 3. On-Resistance Variation with Temperature
VDS = 10V
6
VGS. GATE-SOURCE VOLTAGE (V)
TJ. JUNCTION TEMPERATURE( C)
ID. DRAIN-SOURCE CURRENT(A)
0.8
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current
3.0
2
0.6
ID. DRAIN-SOURCE CURRENT(A)
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3
2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
300
o
PC[mW], POWER DISSIPATION
IS Reverse Drain Current, [mA]
VGS = 0 V
150 C
100
o
25 C
10
o
-55 C
1
0.0
250
200
150
100
50
0
0.2
0.4
0.6
0.8
1.0
25
50
75
100
125
150
175
o
Figure 7. Reverse Drain Current Variation with Diode
Forward Voltage and Temperature
© 2007 Fairchild Semiconductor Corporation
2N7002V / 2N7002VA Rev. 1.2
0
Ta[ C], AMBIENT TEMPERATURE
VSD, Body Diode Forward Voltage [V]
Figure 8. Power Derating
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4
2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics (Continued)
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Figure 9. 6-LEAD, MO293, 1.2MM WIDE, SOT563F
© 2007 Fairchild Semiconductor Corporation
2N7002V / 2N7002VA Rev. 1.2
www.fairchildsemi.com
5
2N7002V / 2N7002VA — N-Channel Enhancement Mode Field Effect Transistor
Physical Dimensions
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Advance Information
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Preliminary
First Production
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Obsolete
Not In Production
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Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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The datasheet is for reference information only.
Rev. I73
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