Shantou Huashan Electronic Devices Co.,Ltd. HTM2A60 ＮＯＮ ＩＮＳＵＬＡＴＥＤ ＴＹＰＥ ＴＲＩＡＣ （ＴＯ－１２６ＭＬ ＰＡＣＫＡＧＥ） █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=2A) * High Commutation dv/dt █ General Description The Triac HTN2A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. █ Absolute Maximum Ratings（Ta=25℃） T stg ——Storage Temperature………………………………………………………………… T j ——Operating Junction Temperature …………………………………………………… -40~125℃ -40~125℃ PGM——Peak Gate Power Dissipation……………………………………………………………… 1.0W VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V IT （RMS）——R.M.S On-state Current（Ta=66℃）……………………………………………… 1.5A VG M —— Peak Gate Voltage……………………………………………………………… 6 . 0 V I G M——Peak Gate Current………………………………………………………… 0.5A I T S M ——Surge On-state Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ……… 13/15A █ Electrical Characteristics （Ta=25℃） Symbol IDRM Items Min. Typ. Repetitive Peak Off-State Current Max. Unit 0.5 mA Conditions VD =VDRM,Single Phase, Half Wave, TJ=125℃ IT=2.1A, Inst. Measurement VTM Peak On-State Voltage 1.6 V I+GT1 Gate Trigger Current（Ⅰ） 20 mA I- GT1 Gate Trigger Current（Ⅱ） 20 mA VD =6V, RL =10 ohm I- GT3 Gate Trigger Current（Ⅲ） 20 mA VD =6V, RL =10 ohm V+ GT1 Gate Trigger Voltage（Ⅰ） 1.5 V VD =6V, RL =10 ohm V- GT1 Gate Trigger Voltage（Ⅱ） 1.5 V VD =6V, RL =10 ohm V- GT3 Gate Trigger Voltage（Ⅲ） 1.5 V VD =6V, RL =10 ohm 0.2 V T J=125℃,VD =1/2VDRM 5.0 V/µS T J=125℃,VD =2/3VDRM VGD (dv/dt)c IH Rth(j-c) Non-trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Holding Current Thermal Resistance VD =6V, RL =10 ohm (di/dt)c= -0.75A/ms 5.0 mA 6.25 ℃/W Junction to case Shantou Huashan Electronic Devices Co.,Ltd. HTM2A60 █ PERFORMANCE CURVES Gate Characteristics Fig 2. On-State Voltage On-state Current [A] Gate Voltage (V) Fig 1. Gate Current On-state Voltage [V] Fig 3. Gate Trigger Voltage vs. Junction Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation [W] Temperature Junction Temperature [℃］ RMS On-state current [A] Fig 5. On State Current vs. Fig 6. Surge On-State Current Rating ( Non-Repetitive ) Surge On-state Current [A] Allowable Case Temp. [°C] Allowable Case Temperature RMS On-state Current [A] Time（Cycles） Shantou Huashan Electronic Devices Co.,Ltd. HTM2A60 Fig 7. Gate Trigger Current vs. Fig 8. Transient Thermal Impedance Impedance [℃/W ] Transient Thermal Junction Temperature Junction Temperature [℃］ Ｔｉｍｅ（ｓｅｃ） Fig 9. Gate Trigger Characteristics Test Circuit １０Ω １０Ω １０Ω Test ProcedureⅠ Test ProcedureⅡ Test ProcedureⅢ