HUASHAN HTF8A60

HTF8A60
Shantou Huashan Electronic Devices Co.,Ltd.
INSULATED TYPE TRIAC (TO-220F PACKAGE)
█ Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(IT(RMS)=8A)
* High Commutation dv/dt
TO-220F
█ General Description
The Triac HTF8A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
1
2
3
█ Absolute Maximum Ratings(Ta=25℃)
Tstg ——Storage Temperature……………………………………………………………… -40~125℃
Tj ——Operating Junction Temperature …………………………………………………… -40~125℃
PGM——Peak Gate Power Dissipation………………………………………………………………… 5W
VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V
IT(RMS)——R.M.S On-State Current(Ta=89℃)………………………………………………… 8A
V G M ——Peak Gate Voltage………………………………………………………………… 10V
IGM——Peak Gate Current…………………………………………………………… 2.0A
ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)…………………… 80/88A
VISO——Isolation Breakdown Voltage (RMS.A.C.1 minute)………………………………… 1500V
█ Electrical Characteristics(Ta=25℃)
Symbol
Items
Min.
Typ.
Max.
Unit
Conditions
IDRM
Repetitive Peak Off-State Current
2.0
mA
VTM
Peak On-State Voltage
1.4
V
VD=VDRM, Single Phase,Half
Wave, TJ=125℃
IT=12A, Inst. Measurement
I+GT1
Gate Trigger Current(Ⅰ)
30
mA
VD=6V, RL=10 ohm
I- GT1
Gate Trigger Current(Ⅱ)
30
mA
VD=6V, RL=10 ohm
I-GT3
Gate Trigger Current(Ⅲ)
30
mA
VD=6V, RL=10 ohm
V+ GT1
Gate Trigger Voltage(Ⅰ)
1.5
V
VD=6V, RL=10 ohm
V- GT1
Gate Trigger Voltage(Ⅱ)
1.5
V
VD=6V, RL=10 ohm
V- GT3
Gate Trigger Voltage(Ⅲ)
1.5
V
VD=6V, RL=10 ohm
0.2
V
10
V/µS
TJ=125℃,VD=1/2VDRM
TJ=125℃,VD=2/3VDRM
(di/dt)c=-4A/ms
VGD
(dv/dt)c
IH
Rth(j-c)
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Holding Current
Thermal Resistance
15
mA
3.7
℃/W
Junction to case
HTP8A60
Shantou Huashan Electronic Devices Co.,Ltd.
█ Performance Curves
10
1
0.1
On-State Voltage
On-state Current [A]
Fig 2.
Gate
Voltage (V)
Fig 1. Gate Characteristics
101
102
Gate
Current
103
(mA)
On-State Voltage [V]
Fig 3. Gate Trigger Voltage vs. Junction
Fig 4. On State Current vs. Maximum
Power Dissipation
Power Dissipation [W]
Temperature
Junction Temperature [℃]
RMS On-State Current [A]
Fig 5. On State Current vs.
Fig 6. Surge On-State Current Rating
( Non-Repetitive )
Surge On-state Current [A]
Allowable Case Temp. [°C]
Allowable Case Temperature
100
RMS On-State Current [A]
101
Time(Cycles)
102
HTP8A60
Shantou Huashan Electronic Devices Co.,Ltd.
Fig 7. Gate Trigger Current vs.
Fig 8. Transient Thermal Impedance
Impedance [℃/W ]
Transient Thermal
Junction Temperature
Junction Temperature [℃]
Time(sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
Test ProcedureⅠ
10Ω
Test ProcedureⅡ
10Ω
Test ProcedureⅢ