MMBD1501/A / 1503/A / 1504/A / 1505/A 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 1 1 2 1503 2 3 3 1504 A11 A13 A14 A15 3 1 1505 2 High Conductance Low Leakage Diode Sourced from Process 1L. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 180 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 2.0 -55 to +150 A A °C TJ Operating Junction Temperature 150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max Units MMBD1501/A/ 1503-1505/A* 350 2.8 357 mW mW/°C °C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 ã 1997 Fairchild Semiconductor Corporation MMBD1501/A / 1503/A / 1504/A / 1505/A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions BV Breakdown Voltage IR = 5.0 µA IR Reverse Current VF Forward Voltage CO Diode Capacitance VR = 125 V VR = 125 V, TA = 150°C VR = 180 V VR = 180 V, TA = 150°C IF = 1.0 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 300 mA VR = 0, f = 1.0 MHz Min Max Units 1.0 3.0 10 5.0 720 830 890 930 1.1 1.15 4.0 nA µA nA µA mV mV mV mV V V pF 200 620 720 800 830 0.87 0.9 V Typical Characteristics 325 Ta= 25°C 300 275 250 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 450 400 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) Ta= 25°C 2 1 0 130 100 150 170 190 VR - REVERSE VOLTAGE (V) 205 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA VVFF - FORWARD VOLTAGE (mV) VVFF - FORWARD VOLTAGE (mV) Ta= 25°C 500 350 3 100 FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA 550 REVERSE CURRENT vs REVERSE VOLTAGE IR - 130 - 205 Volts IR - REVERSE CURRENT (nA) VR - REVERSE VOLTAGE (V) REVERSE VOLTAGE vs REVERSE CURRENT BV - 3.0 to 100 uA 800 Ta= 25°C 750 700 650 600 550 500 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 MMBD1501/A / 1503/A / 1504/A / 1505/A High Conductance Low Leakage Diode (continued) Typical Characteristics (continued) CAPACITANCE vs REVERSE VOLTAGE VR - 0 to 15 V 1.2 4 Ta= 25°C CAPACITANCE (pF) VF - FORWARD VOLTAGE (V) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA 1.1 1 0.9 0.8 10 20 30 50 100 200 300 3 2.5 2 1.5 1 500 Ta= 25°C 3.5 0 IFIF - FORWARD CURRENT (mA) I - CURRENT (mA) 500 IR 400 300 CU RR EN T ST EA D Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 200 100 0 -F OR WA RD 50 100 150 o TA - AMBIENT TEMPERATURE ( C) 12 14 15 POWER DERATING CURVE 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 4 6 8 10 REVERSE VOLTAGE (V) 500 PD - POWER DISSIPATION (mW) Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) 2 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 MMBD1501/A / 1503/A / 1504/A / 1505/A High Conductance Low Leakage Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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