1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BAND 2ND BAND BLACK BLACK BROWN BLACK BLACK BROWN BLACK BROWN BROWN GRAY BLACK RED WHITE BROWN BROWN BLACK High Conductance Fast Diode Sourced from Process D3. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV Working Inverse Voltage IO Average Rectified Current 200 mA IF DC Forward Current 300 mA if Recurrent Peak Forward Current 400 mA if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 4.0 -65 to +200 A A °C TJ Operating Junction Temperature 175 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient ã 1997 Fairchild Semiconductor Corporation Max Units 1N/FDLL 914/A/B / 4148 / 4448 500 3.33 300 mW mW/°C °C/W 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter BV Breakdown Voltage IR Reverse Current VF Forward Voltage 1N914B / 4448 1N916B 1N914 / 916 / 4148 1N914A / 916A 1N916B 1N914B / 4448 Diode Capacitance 1N916/A/B / 4448 1N914/A/B / 4148 Reverse Recovery Time CO TRR Test Conditions IR = 100 µA IR = 5.0 µA VR = 20 V VR = 20 V, TA = 150°C VR = 75 V IF = 5.0 mA IF = 5.0 mA IF = 10 mA IF = 20 mA IF = 30 mA IF = 100 mA Min Max Units 25 50 5.0 720 730 1.0 1.0 1.0 1.0 V V nA µA µA mV mV V V V V 2.0 4.0 4.0 pF pF nS 100 75 620 630 VR = 0, f = 1.0 MHz VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V (60 mA), Irr = 1.0 mA, RL = 100 Ω Typical Characteristics 160 Ta= 25°C 150 140 130 120 110 1 2 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 450 400 350 300 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) Ta= 25°C 100 80 60 40 20 0 10 100 20 30 50 VR - REVERSE VOLTAGE (V) 70 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 100 mA V F - FORWARD VOLTAGE (mV) V F - FORWARD VOLTAGE (mV) Ta= 25°C 500 250 120 100 FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA 550 REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V IR - REVERSE CURRENT (nA) VVRR - REVERSE VOLTAGE (V) REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA 750 Ta= 25°C 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 High Conductance Fast Diode (continued) Typical Characteristics (continued) VF - 0.01 - 20 mA (-40 to +65 Deg C) FORWARD VOLTAGE vs AMBIENT TEMPERATURE 1.6 VVF F - FORWARD VOLTAGE (mV) V F - FORWARD VOLTAGE (V) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA Ta= 25°C 1.4 1.2 1 0.8 0.6 10 20 30 50 100 200 300 I F - FORWARD CURRENT (mA) 500 900 Typical 800 Ta= -40°C 700 600 Ta= +25°C 500 Ta= +65°C 400 300 0.01 CAPACITANCE vs REVERSE VOLTAGE VR = 0.0 to 15 V 0.85 0.8 0.75 0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) I - CURRENT (mA) 500 IR 400 300 CU RR EN TS TE AD Y Io - A ST VER AT AGE EREC TIFIE mA D CU RRE NT mA 200 100 0 -F OR WA RD REVERSE RECOVERY (nS) Ta= 25°C 4 50 100 150 o TA - AMBIENT TEMPERATURE ( C) 10 Ta= 25°C 3.5 3 2.5 2 1.5 14 1 10 20 30 40 50 REVERSE CURRENT (mA) 60 IF = 10 mA - IRR = 1.0 mA - Rloop = 100 Ohms POWER DERATING CURVE 500 DO-35 400 300 SOT-23 200 100 0 0 0.1 0.3 1 3 I F - FORWARD CURRENT (mA) REVERSE RECOVERY TIME vs REVERSE CURRENT P PDD - POWER DISSIPATION (mW) CAPACITANCE (pF) 0.9 0.03 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 High Conductance Fast Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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