BD533/535/537 BD533/535/537 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD534, BD536 and BD538 respectively TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD533 : BD535 : BD537 Value 45 60 80 Units V V V VCES Collector-Emitter Voltage : BD533 : BD535 : BD537 45 60 80 V V V VCEO Collector-Emitter Voltage : BD533 : BD535 : BD537 45 60 80 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current 8 A IB Base Current 1 A PC Collector Dissipation (TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current : BD533 : BD535 : BD537 Test Condition VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 ICES Collector Cut-off Current : BD533 : BD535 : BD537 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE * DC Current Gain hFE hFE Groups J K VCE(sat) : BD533/535 : BD537 : ALL DEVICE : BD533/535 : BD537 : ALL DEVICE : ALL DEVICE * Collector-Emitter Saturation Voltage VCE = 5V, IC = 10mA VCE = 2V, IC = 500mA VCE = 2V, IC = 2A VCE = 2V, IC = 2A VCE = 2V, IC = 3A VCE = 2V, IC = 2A VCE = 2V, IC = 3A Min. VBE(on) * Base-Emitter ON Voltage VCE = 2V, IC = 2A Current Gain Bandwidth Product VCE = 1V, IC = 500mA Max. 100 100 100 Units µA µA µA 100 100 100 µA µA µA 1 mA 20 15 40 25 15 30 15 40 20 75 100 0.8 IC = 2A, IB = 0.2A IC = 6A, IB = 0.6A fT Typ. 0.8 1.5 3 12 V V V MHz * Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD533/535/537 Typical characteristics 1000 1 VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 2V 100 10 0.01 0.1 1 IC = 10 IB 0.1 0.01 0.1 10 1 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage IC = 10 IB 1.7 1.6 IC[A], COLLECTOR CURRENT VBE(sat)[V], SATURATION VOLTAGE 1.8 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 10 IC Max. 10 10 100µ s BD533 BD535 BD537 1 10 µs 1 0.1 1 s DC 0.6 0.5 0.1 ms 1m 10 100 V CE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Safe Operating Area 80 PC[W], POWER DISSIPATION 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD533/535/537 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E