FAIRCHILD TIP30A

TIP30 Series(TIP30/30A/30B/30C)
TIP30 Series(TIP30/30A/30B/30C)
Medium Power Linear Switching Applications
• Complementary to TIP29/29A/29B/29C
TO-220
1
1.Base
PNP Epitaxial Silicon Transistor
2.Collector
3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: TIP30
: TIP30A
: TIP30B
: TIP30C
Value
- 40
- 60
- 80
- 100
Units
V
V
V
V
- 40
- 60
- 80
- 100
V
V
V
V
VCEO
Collector-Emitter Voltage : TIP30
: TIP30A
: TIP30B
: TIP30C
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-1
A
ICP
Collector Current (Pulse)
-3
A
IB
Base Current
- 0.4
A
W
PC
Collector Dissipation (TC=25°C)
30
PC
Collector Dissipation (Ta=25°C)
2
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICES
Parameter
* Collector-Emitter Sustaining Voltage
: TIP30
: TIP30A
: TIP30B
: TIP30C
Collector Cut-off Current
: TIP30/30A
: TIP30B/30C
Test Condition
IC = -30mA, IB = 0
Min.
Max.
-40
-60
-80
-100
Units
V
V
V
V
VCE = -30V, IB = 0
VCE = -60V, IB = 0
-0.3
-0.3
mA
mA
VCE = -40V, VEB = 0
VCE = -60V, VEB = 0
VCE = -80V, VEB = 0
VCE = -100V, VEB = 0
-200
-200
-200
-200
µA
µA
µA
µA
-1.0
mA
Collector Cut-off Current
: TIP30
: TIP30A
: TIP30B
: TIP30C
IEBO
Emitter Cut-off Current
VEB = -5V, IC = 0
hFE
* DC Current Gain
VCE = -4V,IC = -0.2A
VCE = -4V, IC = -1A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = -1A, IB = -125mA
-0.7
V
VBE(sat)
* Base-Emitter Saturation Voltage
VCE = -4V, IC = -1A
-1.3
V
fT
Current Gain Bandwidth Product
VCE = -10V, IC = -200mA
40
15
3.0
75
MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
hFE, DC CURRENT GAIN
VCE = -4V
100
10
1
-1
-10
-100
-1000
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
1000
-10000
IC /IB = 10
V BE(sat)
-1000
-100
V CE(sat)
-10
-1
-10000
-10
IC[mA], COLLECTOR CURRENT
-100
-1000
-10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
40
DC
-1
s
5m
IC(MAX) (DC)
TIP30 V CEO MAX.
TIP30A V CEO MAX.
TIP30B V CEO MAX.
TIP30C V CEO MAX.
-0.1
PC[W], POWER DISSIPATION
s
1m
IC[A], COLLECTOR CURRENT
35
IC(MAX) (PULSE)
30
25
20
15
10
5
0
-10
-100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
©2000 Fairchild Semiconductor International
0
25
50
75
100
125
150
175
200
o
TC[ C], CASE TEMPERATURE
Figure 4. Power Derating
Rev. A, February 2000
TIP30 Series(TIP30/30A/30B/30C)
Typical Characteristics
TIP30 Series(TIP30/30A/30B/30C)
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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not intended to be an exhaustive list of all such trademarks.
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E2CMOS™
FACT™
FACT Quiet Series™
FAST®
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GTO™
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ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
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SyncFET™
TinyLogic™
UHC™
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E