FAIRCHILD BD378

BD376/378/380
BD376/378/380
Medium Power Linear and Switching
Applications
• Complement to BD375, BD377 and BD379 respectively
TO-126
1
PNP Epitaxial Silicon Transistor
1. Emitter
2.Collector
3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: BD376
: BD378
: BD380
Value
- 50
- 75
- 100
Units
V
V
V
- 45
- 60
- 80
V
V
V
V
VCEO
Collector-Emitter Voltage : BD376
: BD378
: BD380
VEBO
Emitter-Base Voltage
-5
IC
Collector Current (DC)
-2
A
ICP
*Collector Current (Pulse)
-3
A
IB
Base Current
-1
A
PC
Collector Dissipation (TC=25°C)
25
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
*Collector-Emitter Sustaining Voltage
: BD376
: BD378
: BD380
Test Condition
Min.
IC = - 100mA, IB = 0
- 45
- 60
- 80
V
V
V
- 50
- 75
- 100
V
V
V
BVCBO
Collector-Base
Breakdown Voltage
: BD376
: BD378
: BD380
IC = - 100µA, IE = 0
ICBO
Collector Cut-off Current
: BD376
: BD378
: BD380
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
Typ.
Max.
Units
-2
-2
-2
µA
µA
µA
- 100
µA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
hFE1
hFE2
*DC Current Gain
VCE = - 2V, IC = - 0.15A
VCE = - 2V, IC = - 1A
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = - 1A, IB = - 0.1A
-1
V
VBE(on)
*Base-Emitter ON Voltage
VCE = - 2V, IC = -1A
- 1.5
V
tON
Turn ON Time
tOFF
Turn OFF Time
VCC = - 30V, IC = - 0.5A
IB1 = - IB2 = - 0.05A
RL = 60Ω
40
20
375
50
ns
500
ns
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
hFE Classificntion
Classification
6
10
16
25
hFE1
40 ~ 100
63 ~ 160
100 ~ 250
150 ~ 375
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD376/378/380
Typical Characteristics
100
-500
VCE(sat)(mV), SATURATION VOLTAGE
VCE = -2V
hFE, DC CURRENT GAIN
80
60
40
20
0
-10
-100
-400
-300
-200
IC[mA], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-10
-1.1
-1.0
-0.7
-0.5
-0.4
-0.3
D
ITE
-0.6
-1
LIM
VBE(on)
VCE = -5V
ICMAX. (Continuous)
-0.1
BD376
BD378
BD380
VCEO MAX.
-0.8
IC[A], COLLECTOR CURRENT
t)
(sa
V BE 10.I B
=
c
I
-0.9
S/b
VBE(V), BASE EMITTER VOLTAGE
IC = 10.IB
-100
-0
-1E-3
-1000
IC = 20.IB
-0.2
-0.1
-1E-3
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
40
PC[W], POWER DISSIPATION
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
200
o
Tc[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD376/378/380
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E