BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380 Value - 50 - 75 - 100 Units V V V - 45 - 60 - 80 V V V V VCEO Collector-Emitter Voltage : BD376 : BD378 : BD380 VEBO Emitter-Base Voltage -5 IC Collector Current (DC) -2 A ICP *Collector Current (Pulse) -3 A IB Base Current -1 A PC Collector Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : BD376 : BD378 : BD380 Test Condition Min. IC = - 100mA, IB = 0 - 45 - 60 - 80 V V V - 50 - 75 - 100 V V V BVCBO Collector-Base Breakdown Voltage : BD376 : BD378 : BD380 IC = - 100µA, IE = 0 ICBO Collector Cut-off Current : BD376 : BD378 : BD380 VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 Typ. Max. Units -2 -2 -2 µA µA µA - 100 µA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 hFE1 hFE2 *DC Current Gain VCE = - 2V, IC = - 0.15A VCE = - 2V, IC = - 1A VCE(sat) *Collector-Emitter Saturation Voltage IC = - 1A, IB = - 0.1A -1 V VBE(on) *Base-Emitter ON Voltage VCE = - 2V, IC = -1A - 1.5 V tON Turn ON Time tOFF Turn OFF Time VCC = - 30V, IC = - 0.5A IB1 = - IB2 = - 0.05A RL = 60Ω 40 20 375 50 ns 500 ns * Pulse Test: PW=350µs, duty Cycle=2% Pulsed hFE Classificntion Classification 6 10 16 25 hFE1 40 ~ 100 63 ~ 160 100 ~ 250 150 ~ 375 ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD376/378/380 Typical Characteristics 100 -500 VCE(sat)(mV), SATURATION VOLTAGE VCE = -2V hFE, DC CURRENT GAIN 80 60 40 20 0 -10 -100 -400 -300 -200 IC[mA], COLLECTOR CURRENT -0.01 -0.1 -1 -10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage -10 -1.1 -1.0 -0.7 -0.5 -0.4 -0.3 D ITE -0.6 -1 LIM VBE(on) VCE = -5V ICMAX. (Continuous) -0.1 BD376 BD378 BD380 VCEO MAX. -0.8 IC[A], COLLECTOR CURRENT t) (sa V BE 10.I B = c I -0.9 S/b VBE(V), BASE EMITTER VOLTAGE IC = 10.IB -100 -0 -1E-3 -1000 IC = 20.IB -0.2 -0.1 -1E-3 -0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area 40 PC[W], POWER DISSIPATION 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 200 o Tc[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD376/378/380 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E