TIP42 SERIES(TIP42/42A/42B/42C) TIP42 SERIES(TIP42/42A/42B/42C) Medium Power Linear Switching Applications • Complement to TIP41/41A/41B/41C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : TIP42 : TIP42A : TIP42B : TIP42C Value - 40 - 60 - 80 - 100 Units V V V V - 40 - 60 - 80 - 100 V V V V V VCEO Collector-Emitter Voltage : TIP42 : TIP42A : TIP42B : TIP42C VEBO Emitter-Base Voltage -5 IC Collector Current (DC) -6 A ICP Collector Current (Pulse) -10 A IB Base Current -2 A PC Collector Dissipation (TC=25°C) 65 W PC Collector Dissipation (Ta=25°C) 2 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO ICES Parameter * Collector-Emitter Sustaining Voltage : TIP42 : TIP42A : TIP42B : TIP42C Collector Cut-off Current : TIP42/42A : TIP42B/42C Test Condition IC = -30mA, IB = 0 Min. Max. -40 -60 -80 -100 Units V V V V VCE = -30V, IB = 0 VCE = -60V, IB = 0 -0.7 -0.7 mA mA VCE = -40V, VEB = 0 VCE = -60V, VEB = 0 VCE = -80V, VEB = 0 VCE = -100V, VEB = 0 -400 -400 -400 -400 µA µA µA µA -1 mA Collector Cut-off Current : TIP42 : TIP42A : TIP42B : TIP42C IEBO Emitter Cut-off Current VEB = -5V, IC = 0 hFE * DC Current Gain VCE = -4V, IC = -0.3A VCE = -4V, IC = -3A VCE(sat) * Collector-Emitter Saturation Voltage IC = -6A, IB = -600mA -1.5 V VBE(sat) * Base-Emitter Saturation Voltage VCE = -4V, IC = -6A -2.0 V fT Current Gain Bandwidth Product VCE = -10V, IC = -500mA 30 15 3.0 75 MHz * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2000 Fairchild Semiconductor International Rev. A, February 2000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = -4V 100 10 1 -0.01 -0.1 -1 -10 -2.0 IC /IB = 10 -1.6 VBE(sat) -1.2 -0.8 VCE(sat) -0.4 -0.0 -0.01 -0.1 -10 -100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 IC(MAX) (PULSE) -10 0.5 ms s 5m s 1m IC(MAX) (DC) -1 TIP42 TIP42A TIP42B PC[W], POWER DISSIPATION -100 IC[A], COLLECTOR CURRENT -1 80 60 40 20 TIP42C -0.1 0 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area ©2000 Fairchild Semiconductor International 0 25 50 75 100 125 150 175 o T C[ C], CASE TEMPERATURE Figure 4. Power derating Rev. A, February 2000 TIP42 SERIES(TIP42/42A/42B/42C) Typical Characteristics TIP42 SERIES(TIP42/42A/42B/42C) Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E