FAIRCHILD TIP42

TIP42 SERIES(TIP42/42A/42B/42C)
TIP42 SERIES(TIP42/42A/42B/42C)
Medium Power Linear Switching Applications
• Complement to TIP41/41A/41B/41C
TO-220
1
1.Base
2.Collector
3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: TIP42
: TIP42A
: TIP42B
: TIP42C
Value
- 40
- 60
- 80
- 100
Units
V
V
V
V
- 40
- 60
- 80
- 100
V
V
V
V
V
VCEO
Collector-Emitter Voltage : TIP42
: TIP42A
: TIP42B
: TIP42C
VEBO
Emitter-Base Voltage
-5
IC
Collector Current (DC)
-6
A
ICP
Collector Current (Pulse)
-10
A
IB
Base Current
-2
A
PC
Collector Dissipation (TC=25°C)
65
W
PC
Collector Dissipation (Ta=25°C)
2
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICES
Parameter
* Collector-Emitter Sustaining Voltage
: TIP42
: TIP42A
: TIP42B
: TIP42C
Collector Cut-off Current
: TIP42/42A
: TIP42B/42C
Test Condition
IC = -30mA, IB = 0
Min.
Max.
-40
-60
-80
-100
Units
V
V
V
V
VCE = -30V, IB = 0
VCE = -60V, IB = 0
-0.7
-0.7
mA
mA
VCE = -40V, VEB = 0
VCE = -60V, VEB = 0
VCE = -80V, VEB = 0
VCE = -100V, VEB = 0
-400
-400
-400
-400
µA
µA
µA
µA
-1
mA
Collector Cut-off Current
: TIP42
: TIP42A
: TIP42B
: TIP42C
IEBO
Emitter Cut-off Current
VEB = -5V, IC = 0
hFE
* DC Current Gain
VCE = -4V, IC = -0.3A
VCE = -4V, IC = -3A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = -6A, IB = -600mA
-1.5
V
VBE(sat)
* Base-Emitter Saturation Voltage
VCE = -4V, IC = -6A
-2.0
V
fT
Current Gain Bandwidth Product
VCE = -10V, IC = -500mA
30
15
3.0
75
MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
hFE, DC CURRENT GAIN
VCE = -4V
100
10
1
-0.01
-0.1
-1
-10
-2.0
IC /IB = 10
-1.6
VBE(sat)
-1.2
-0.8
VCE(sat)
-0.4
-0.0
-0.01
-0.1
-10
-100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
IC(MAX) (PULSE)
-10
0.5
ms
s
5m
s
1m
IC(MAX) (DC)
-1
TIP42
TIP42A
TIP42B
PC[W], POWER DISSIPATION
-100
IC[A], COLLECTOR CURRENT
-1
80
60
40
20
TIP42C
-0.1
0
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
©2000 Fairchild Semiconductor International
0
25
50
75
100
125
150
175
o
T C[ C], CASE TEMPERATURE
Figure 4. Power derating
Rev. A, February 2000
TIP42 SERIES(TIP42/42A/42B/42C)
Typical Characteristics
TIP42 SERIES(TIP42/42A/42B/42C)
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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not intended to be an exhaustive list of all such trademarks.
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CoolFET™
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E2CMOS™
FACT™
FACT Quiet Series™
FAST®
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GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
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SyncFET™
TinyLogic™
UHC™
VCX™
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E