LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer U FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Wide RF Output Frequency Range: 1.3GHz to 2.3GHz 15.9dBm Typical Input IP3 at 1.9GHz On-Chip RF Output Transformer No External LO or RF Matching Required Single-Ended LO and RF Operation Integrated LO Buffer: –5dBm Drive Level Low LO to RF Leakage: – 41dBm Typical Wide IF Frequency Range: DC to 400MHz Enable Function with Low Off-State Leakage Current Single 5V Supply Small 16-Lead QFN Plastic Package U APPLICATIO S ■ ■ ■ ■ Wireless Infrastructure Cable Downlink Infrastructure Point-to-Point Data Communications High Linearity Frequency Conversion The LT®5520 mixer is designed to meet the high linearity requirements of wireless and cable infrastructure transmission applications. A high-speed, internally matched, LO amplifier drives a double-balanced mixer core, allowing the use of a low power, single-ended LO source. An RF output transformer is integrated, thus eliminating the need for external matching components at the RF output, while reducing system cost, component count, board area and system-level variations. The IF port can be easily matched to a broad range of frequencies for use in many different applications. The LT5520 mixer delivers 15.9dBm typical input 3rd order intercept point at 1.9GHz with IF input signal levels of –10dBm. The input 1dB compression point is typically 4dBm. The IC requires only a single 5V supply. , LTC and LT are registered trademarks of Linear Technology Corporation. U TYPICAL APPLICATIO 5VDC 1µF RF Output Power and Output IM3 vs IF Input Power (Two Input Tones) 1000pF 39nH 10 BPF IF INPUT 220pF VCC1 VCC2 VCC3 BIAS 100Ω 0 –10 10pF 4:1 IF + RF + IF – RF – 15pF 220pF PA BPF 100Ω RF OUTPUT POUT, IM3 (dBm/TONE) EN –20 –30 –40 –50 –60 –70 –80 GND 5pF (OPTIONAL) LO INPUT –5dBm LO+ 85Ω 5pF LO – POUT –90 –16 LT5520 IM3 PLO = –5dBm fLO = 1760MHz fIF1 = 140MHz fIF2 = 141MHz fRF = 1900MHz TA = 25°C –12 –4 0 –8 IF INPUT POWER (dBm/TONE) 4 5520 • F01b 5520 F01 Figure 1. Frequency Conversion in Wireless Infrastructure Transmitter 5520f 1 LT5520 U W U PACKAGE/ORDER I FOR ATIO ORDER PART NUMBER GND TOP VIEW 16 15 14 13 LT5520EUF 12 GND GND 1 IF + 2 11 RF + 17 IF – 3 10 RF – 9 GND 5 6 7 8 EN VCC2 VCC3 GND 4 VCC1 Supply Voltage ....................................................... 5.5V Enable Voltage ............................. –0.3V to (VCC + 0.3V) LO Input Power (Differential) .............................. 10dBm RF+ to RF – Differential DC Voltage...................... ±0.13V RF Output DC Common Mode Voltage ......... –1V to VCC IF Input Power (Differential) ............................... 10dBm IF+, IF – DC Currents .............................................. 25mA LO+ to LO– Differential DC Voltage .......................... ±1V LO Input DC Common Mode Voltage ............ –1V to VCC Operating Temperature Range .................–40°C to 85°C Storage Temperature Range ................. – 65°C to 125°C Junction Temperature (TJ).................................... 125°C GND W (Note 1) LO+ W W AXI U RATI GS LO– U ABSOLUTE UF PART MARKING UF PACKAGE 16-LEAD (4mm × 4mm) PLASTIC QFN EXPOSED PAD IS GND (PIN 17), MUST BE SOLDERED TO PCB 5520 TJMAX = 125°C, θJA = 37°C/W Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS MIN IF Input Frequency Range TYP MAX UNITS DC to 400 MHz LO Input Frequency Range 900 to 2700 MHz RF Output Frequency Range 1300 to 2300 MHz 1900MHz Application: VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.76GHz at –5dBm, RF output measured at 1900MHz, unless otherwise noted. Test circuit shown in Figure 2. (Notes 2, 3) PARAMETER CONDITIONS MIN IF Input Return Loss ZO = 50Ω, with External Matching 20 dB LO Input Return Loss ZO = 50Ω 16 dB RF Output Return Loss ZO = 50Ω 20 dB LO Input Power TYP MAX –10 to 0 Conversion Gain dBm –1 Input 3rd Order Intercept –10dBm/Tone, ∆f = 1MHz Input 2nd Order Intercept –10dBm, Single-Tone UNITS dB 15.9 dBm 45 dBm LO to RF Leakage –41 dBm LO to IF Leakage –35 dBm 4 dBm Input 1dB Compression IF Common Mode Voltage Internally Biased 1.77 VDC Noise Figure Single Side Band 15 dB DC ELECTRICAL CHARACTERISTICS (Test Circuit Shown in Figure 2) VCC = 5VDC, EN = High , TA = 25°C (Note 3), unless otherwise noted. PARAMETER CONDITIONS MIN TYP MAX UNITS Enable (EN) Low = Off, High = On Turn-On Time (Note 4) Turn-Off Time (Note 4) Input Current µs 2 µs 6 VENABLE = 5VDC 1 10 µA 5520f 2 LT5520 DC ELECTRICAL CHARACTERISTICS (Test Circuit Shown in Figure 2) VCC = 5VDC, EN = High , TA = 25°C (Note 3), unless otherwise noted. PARAMETER CONDITIONS MIN Enable = High (On) TYP MAX UNITS 3 VDC Enable = Low (Off) 0.5 VDC Power Supply Requirements (VCC) Supply Voltage 4.5 to 5.25 VDC Supply Current VCC = 5VDC 60 70 mA Shutdown Current EN = Low 1 100 µA Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: External components on the final test circuit are optimized for operation at fRF = 1900MHz, fLO = 1.76GHz and fIF = 140MHz. Note 3: Specifications over the –40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process controls. Note 4: Turn-On and Turn-Off times are based on the rise and fall times of the RF output envelope from full power to –40dBm with an IF input power of –10dBm. U W TYPICAL PERFOR A CE CHARACTERISTICS Shutdown Current vs Supply Voltage Supply Current vs Supply Voltage 1.0 66 0.9 TA = 85°C SHUTDOWN CURRENT (µA) SUPPLY CURRENT (mA) 64 62 TA = 25°C 60 58 TA = –40°C 56 54 52 50 4.0 (Test Circuit Shown in Figure 2) 0.8 0.7 0.6 TA = 85°C 0.5 0.4 0.3 0.2 TA = 25°C TA = –40°C 0.1 4.25 4.5 4.75 5.0 SUPPLY VOLTAGE (V) 5.25 0 4.0 5.5 4.25 5.25 4.5 4.75 5.0 SUPPLY VOLTAGE (V) 5.5 5520 • GO2 5520 • GO1 VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.76GHz at –5dBm, RF output measured at 1900MHz, unless otherwise noted. For 2-tone inputs: 2nd IF input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.) 18 32 16 HIGH SIDE LO SSB NF IIP3 (dBm) 6 4 22 30 20 25 IIP3 20 LOW SIDE LO 15 HIGH SIDE LO 1500 1700 1900 2100 2300 2500 RF OUTPUT FREQUENCY (MHz) 5520 • GO3 –20 12 1300 –30 HIGH SIDE LO –40 –50 LOW SIDE LO 10 14 –2 45 35 HIGH SIDE LO 24 16 LOW SIDE AND HIGH SIDE LO –10 40 18 2 –4 1300 IIP2 26 8 0 LOW SIDE LO 28 10 GAIN 55 IIP2 (dBm) GAIN, NF (dB) 12 LO-RF Leakage vs RF Output Frequency 50 30 LOW SIDE LO 14 IIP3 and IIP2 vs RF Output Frequency LO LEAKAGE (dBm) Conversion Gain and SSB Noise Figure vs RF Output Frequency 1500 1700 1900 2100 2300 RF OUTPUT FREQUENCY (MHz) 5 2500 5520 • GO4 –60 1300 1500 1700 1900 2100 2300 RF OUTPUT FREQUENCY (MHz) 2500 5520 • GO5 5520f 3 LT5520 U W TYPICAL PERFOR A CE CHARACTERISTICS VCC = 5VDC, EN = High , TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.76GHz at –5dBm, RF output measured at 1900MHz, unless otherwise noted. For 2-tone inputs: 2nd IF Input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.) Conversion Gain and SSB Noise Figure vs LO Input Power 50 18 45 16 40 14 35 TA = 85°C SSB NF 10 GAIN (dB) TA = –40°C TA = 25°C 12 6 10 4 8 2 GAIN TA = 25°C 6 TA = –40°C 0 –2 –4 –16 TA = 85°C –12 –8 –4 0 LO INPUT POWER (dBm) NF (dB) 8 –10 TA = 25°C TA = 85°C IIP2 30 25 20 IIP3 TA = 25°C, TA = –40°C 15 –30 TA = –40°C –40 10 2 5 0 0 –16 –50 0 –8 –12 –4 LO INPUT POWER (dBm) 5520 • G06 –60 –16 4 RF Output Power and Output IM2 vs IF Input Power (Two Input Tones) 10 10 40 –10 HIGH SIDE LO 30 25 IIP3 HIGH SIDE LO 15 LOW SIDE LO –20 –30 0 TA = –40°C TA = 85°C TA = 25°C POUT, IM2 (dBm/TONE) 0 POUT, IM3 (dBm/TONE) IIP3, IIP2 (dBm) LOW SIDE LO 45 20 POUT –40 –50 –60 TA = –40°C TA = 85°C IM3 IM2 –70 0 –8 –12 –4 IF INPUT POWER (dBm/TONE) –80 –16 4 –5 RETURN LOSS (dB) –3 –10 –15 LO PORT IF PORT RF PORT 4 5520 • G12 0 500 1000 1500 2000 FREQUENCY (MHz) 25 3 IIP3 2 HIGH SIDE LO 3000 5520 • G13 20 15 LOW SIDE LO 10 GAIN –1 2500 35 30 1 –25 0 –8 –4 IF INPUT POWER (dBm) 40 IIP2 4 0 –5 –12 HIGH SIDE LO 5 –20 –4 45 IIP3, IIP2 (dBm) TA = 85°C –2 6 GAIN (dB) 2 –6 –16 50 LOW SIDE LO 7 –1 4 8 3 TA = 25°C 0 –8 –12 –4 IF INPUT POWER (dBm/TONE) Conversion Gain, IIP3 and IIP2 vs Supply Voltage 0 4 0 TA = 25°C 5520 • G11 IF, LO and RF Port Return Loss vs Frequency TA = –40°C TA = 85°C 5520 • G10 Conversion Gain vs IF Input Power (One Input Tone) 1 TA = –40°C –50 –80 –90 –16 POUT –40 5 4 TA = 25°C –30 –60 5520 • G09 GAIN (dB) TA = 85°C –20 –70 0 –8 –12 –4 LO INPUT POWER (dBm) TA = –40°C –10 10 0 –16 4 5520 • G08 RF Output Power and Output IM3 vs IF Input Power (Two Input Tones) 50 35 0 –8 –12 –4 LO INPUT POWER (dBm) 5520 • G07 IIP3 and IIP2 vs LO Input Power IIP2 TA = 85°C TA = 25°C TA = 85°C 4 4 –20 TA = –40°C LO LEAKAGE (dBm) 20 14 IIP3, IIP2 (dBm) 16 12 LO-RF Leakage vs LO Input Power IIP3 and IIP2 vs LO Input Power –2 4.0 5 LOW SIDE AND HIGH SIDE LO 4.25 5.25 4.5 4.75 5.0 SUPPLY VOLTAGE (V) 0 5.5 5520 • G14 5520f 4 LT5520 U U U PI FU CTIO S GND (Pins 1, 4, 9, 12, 13, 16): Internal Grounds. These pins are used to improve isolation and are not intended as DC or RF grounds for the IC. Connect these pins to low impedance grounds for best performance. IF+, IF – (Pins 2, 3): Differential IF Signal Inputs. A differential signal must be applied to these pins through DC blocking capacitors. The pins must be connected to ground with 100Ω resistors (the grounds must each be capable of sinking about 18mA). For best LO leakage performance, these pins should be DC isolated from each other. An impedance transformation is required to match the IF input to the desired source impedance (typically 50Ω or 75Ω). EN (Pin 5): Enable Pin. When the applied voltage is greater than 3V, the IC is enabled. When the applied voltage is less than 0.5V, the IC is disabled and the DC current drops to about 1µA. VCC1 (Pin 6): Power Supply Pin for the Bias Circuits. Typical current consumption is about 2mA. This pin should be externally connected to VCC and have appropriate RF bypass capacitors. VCC2 (Pin 7): Power Supply Pin for the LO Buffer Circuits. Typical current consumption is about 22mA. This pin should have appropriate RF bypass capacitors as shown in Figure 2. The 1000pF capacitor should be located as close to the pins as possible. VCC3 (Pin 8): Power Supply Pin for the Internal Mixer. Typical current consumption is about 36mA. This pin should be externally connected to VCC through an inductor. A 39nH inductor is used in Figure 2, though the value is not critical. RF –, RF+ (Pins 10, 11): Differential RF Outputs. One pin may be DC connected to a low impedance ground to realize a 50Ω single-ended output. No external matching components are required. A DC voltage should not be applied across these pins, as they are internally connected through a transformer winding. LO+, LO – (Pins 14, 15): Differential Local Oscillator Inputs. The LT5520 works well with a single-ended source driving the LO+ pin and the LO– pin connected to a low impedance ground. No external matching components are required. An internal resistor is connected across these pins; therefore, a DC voltage should not be applied across the inputs. GROUND (Pin 17, Exposed Pad): DC and RF ground return for the entire IC. This must be soldered to the printed circuit board low impedance ground plane. W BLOCK DIAGRA BACKSIDE GROUND GND 17 12 RF + 11 RF – 10 GND 9 GND 13 5pF 8 VCC3 HIGH SPEED LO BUFFER LO+ 14 10pF DOUBLEBALANCED MIXER 85Ω LO – 15 6 VCC1 5pF BIAS GND 16 5 EN 7 1 2 3 4 VCC2 GND IF + IF – GND 5520 BD 5520f 5 LT5520 TEST CIRCUIT LOIN 1760MHz 16 1 GND GND IFIN 140MHz 1 14 LO+ 13 GND 12 GND R1 C1 T1 2 5 2 IF + 4 3 C2 ER = 4.4 R2 RF GND 0.018" 4 IF – GND EN 5 DC GND 11 RF – 10 VCC1 VCC2 6 7 GND VCC3 EN 0.062" RF + REF DES VALUE SIZE PART NUMBER C1, C2 220pF 0402 AVX 04023C221KAT2A C3 15pF 0402 AVX 04023A150KAT2A C4 1000pF 0402 AVX 04023A102KAT2A C5 1µF 0603 Taiyo Yuden LMK107BJ105MA L1 39nH 0402 Toko LL1005-FH39NJ LT5520 C3 3 0.018" 15 LO – RFOUT 1900MHz 9 R1, R2 8 L1 100Ω, 0.1% 0603 4:1 SM-22 T1 IRC PFC-W0603R-03-10R1-B M/A-COM ETC4-1-2 VCC C5 C4 5520 TC01 Figure 2. Test Schematic for the LT5520 U W U U APPLICATIO S I FOR ATIO The LT5520 consists of a double-balanced mixer, a highperformance LO buffer, and bias/enable circuits. The RF and LO ports may be driven differentially; however, they are intended to be used in single-ended mode by connecting one input of each pair to ground. The IF input ports must be DC-isolated from the source and driven differentially. The IF input should be impedance-matched for the desired input frequency. The LO input has an internal broadband 50Ω match with return loss better than 10dB at frequencies up to 3000MHz. The RF output band ranges from 1300MHz to 2300MHz, with an internal RF transformer providing a 50Ω impedance match across the band. Low side or high side LO injection can be used. IF Input Port The IF inputs are connected to the emitters of the doublebalanced mixer transistors, as shown in Figure 3. These pins are internally biased and an external resistor must be connected from each IF pin to ground to set the current through the mixer core. The circuit has been optimized to work with 100Ω resistors, which will result in approximately 18mA of DC current per side. For best LO leakage performance, the resistors should be well matched; thus resistors with 0.1%, tolerance are recommended. If LO leakage is not a concern, then lesser tolerance resistors can be used. The symmetry of the layout is also important for achieving optimum LO isolation. The capacitors shown in Figure 3, C1 and C2, serve two purposes. They provide DC isolation between the IF+ and IF – ports, thus preventing DC interactions that could cause unpredictable variations in LO leakage. They also improve the impedance match by canceling excess inductance in the package and transformer. The input capacitor value required to realize an impedance match at desired frequency, f, can be estimated as follows: C1 = C2 = 1 (2πf)2 (LIN + LEXT ) where; f is in units of Hz, LIN and LEXT are in H, and C1, C2 are in farad. LIN is the differential input inductance of the LT5520, and is approximately 1.67nH. LEXT represents the combined inductances of differential external components and transmission lines. For the evaluation board shown in Figure 10, LEXT = 4.21nH. Thus, for f = 140MHz, the above formula gives C1 = C2 = 220pF. 5520f 6 LT5520 U U W U APPLICATIO S I FOR ATIO 100Ω 0.1% C1 T1 4:1 IFIN 50Ω LOIN 50Ω 18mA 14 5pF LO+ 220Ω 2 C3 VCC VCC 3 C2 100Ω 0.1% 18mA 15 LT5520 85Ω 5pF LO – 220Ω LT5520 5520 F03 5520 F04 Figure 3. IF Input with External Matching Figure 4. LO Input Circuit Table 1 lists the differential IF input impedance and reflection coefficient for several frequencies. A 4:1 balun can be used to transform the impedance up to about 50Ω. Differential S11 Mag Angle Though the LO input is internally 50Ω matched, there may be some cases, particularly at higher frequencies or with different source impedances, where a further optimized match is desired. Table 2 includes the single -ended input impedance and reflection coefficient vs frequency for the LO input for use in such cases. Table 2. Single-Ended LO Input Impedance Table 1. IF Input Differential Impedance Frequency (MHz) Differential Input Impedance 10 10.1 + j0.117 0.663 180 44 10.1 + j0.476 0.663 179 70 10.1 + j0.751 0.663 178 Frequency (MHz) Input Impedance Mag Angle 140 10.2 + j1.47 0.663 177 1300 62.8 – j9.14 0.139 –30.9 170 10.2 + j1.78 0.663 176 1500 62.2 – j11.4 0.148 –37.1 240 10.2 + j2.53 0.663 174 1700 61.5 – j13.4 0.157 – 42.4 360 10.2 + j3.81 0.663 171 1900 60.0 – j15.2 0.164 – 48.9 500 10.2 + j5.31 0.663 167 2100 58.4 – j16.9 0.172 –54.7 2300 56.5 – j17.9 0.176 –60.4 2500 54.9 – j18.8 0.182 –65.1 2700 53.7 – j18.8 0.182 –68.5 LO Input Port The simplified circuit for the LO buffer input is shown in Figure 4. The LO buffer amplifier consists of high-speed limiting differential amplifiers, optimized to drive the mixer quad for high linearity. The LO + and LO – ports can be driven differentially; however, they are intended to be driven by a single-ended source. An internal resistor connected across the LO + and LO – inputs provides a broadband 50Ω impedance match. Because of the resistive match, a DC voltage at the LO input is not recommended. If the LO signal source output is not AC coupled, then a DC blocking capacitor should be used at the LO input. S11 RF Output Port An internal RF transformer, shown in Figure 5, reduces the mixer-core impedance to provide an impedance of 50Ω across the RF + and RF – pins. The LT5520 is designed and tested with the outputs configured for single-ended operation, as shown in the Figure 5; however, the outputs can be used differentially as well. A center-tap in the transformer provides the DC connection to the mixer core and the transformer provides DC isolation at the RF output. The RF + and RF – pins are connected together through the secondary windings of the transformer, thus a DC voltage should not be applied across these pins. 5520f 7 LT5520 U W U U APPLICATIO S I FOR ATIO The impedance data for the RF output, listed in Table 3, can be used to develop matching networks for different load impedances. Table 3. Single-Ended RF Output Impedance Frequency (MHz) Input Impedance Mag Angle 1300 26.9 + j38.2 0.520 94.7 1500 44.2 + j35.7 0.359 78.4 1700 53.9 + j20.6 0.198 68.0 3 1900 49.5 + j7.97 0.080 88.9 2 14 2100 42.8 + j4.14 0.089 148 1 12 2300 38.9 + j5.41 0.139 151 2700 41.1 – j9.51 0.154 140 0.142 20 4 GAIN (dB) 38.7 + j7.78 5 18 LOW SIDE LO IIP3 16 HIGH SIDE LO 0 GAIN 10 –1 8 LOW SIDE LO –2 127 6 HIGH SIDE LO –3 4 –4 2 –5 RF+ 0 11 IIP3 (dBm) 2500 S11 The performance was evaluated with the input tuned for each of these frequencies and the results are summarized in Figures 6-8. The same IF input balun transformer was used for all measurements. In each case, the LO input frequency was adjusted to maintain an RF output frequency of 1900 MHz. 100 0 700 200 300 400 500 600 INPUT FREQUENCY (MHz) 5520 F06 Figure 6. Conversion Gain and IIP3 vs Tuned IF Input Frequency VCC RF– LT5520 18 RFOUT 50Ω PLO = –5dBm 5520 F05 Figure 5. RF Output Circuit Operation at Different Input Frequencies On the evaluation board shown in Figure 10, the input of the LT5520 can be easily matched for different frequencies by changing the input capacitors, C1 and C2. Table 4 lists some actual values used at selected frequencies. Table 4. Input Capacitor Values vs Frequency 17 NF (dB) 8 VCC 10 HIGH SIDE LO 16 15 LOW SIDE LO PLO = 0dBm 14 13 0 100 200 300 400 500 600 INPUT FREQUENCY (MHz) 700 5520 F07 Frequency (MHz) Capacitance (C1, C2) (pF) 70 820 140 220 240 68 480 18 650 12 Figure 7. SSB Noise Figure vs Tuned IF Input Frequency 5520f 8 LT5520 U W U U APPLICATIO S I FOR ATIO Figures 6-8 illustrate the performance versus tuned IF input frequency with both high side and low side LO injection. Figure 6 shows the measured conversion gain and IIP3. The noise figure is plotted in Figure 7 for LO power levels of –5dBm and 0dBm. At lower input frequencies, the LO power level has little impact on noise figure. However, for higher frequencies, an increased LO drive level may be utilized to achieve better noise figure. The single-tone IIP2 behavior is illustrated in Figure 8. Low Frequency Matching of the RF Output Port Without any external components on the RF output, the internal transformer of the LT5520 provides a good 50Ω impedance match for RF frequencies above approximately 1600MHz. At frequencies lower than this, the return loss drops below 10dB and degrades the conversion gain. The addition of a single 3.3pF capacitor in series with the RF output improves the match at lower RF frequencies, shifting the 10dB return loss point to about 1300MHz, as demonstrated in Figure 9. This change also results in an improvement of the conversion gain, as shown in Figure 9. 60 0 LOW SIDE LO 50 –1 GAIN (dB) IIP2 (dBm) HIGH SIDE LO 30 20 COUT = 3.3pF NO COUT –5 GAIN –10 –3 –4 RETURN LOSS –15 –5 –6 –20 –7 10 –8 0 100 200 300 400 500 600 INPUT FREQUENCY (MHz) 700 5520 F08 Figure 8. IIP2 vs Tuned IF Input Frequency COUT = 3.3pF –9 1200 1400 1600 1800 2000 FREQUENCY (MHz) RETURN LOSS (dB) –2 40 0 0 1 NO COUT 2200 –25 2400 5520 F09 Figure 9. Conversion Gain and Return Loss vs Output Frequency 5520f 9 LT5520 U W U U APPLICATIO S I FOR ATIO (10a) Top Layer Silkscreen (10b) Top Layer Metal Figure 10. Evaluation Board Layout 5520f 10 LT5520 U PACKAGE DESCRIPTIO UF Package 16-Lead Plastic QFN (4mm × 4mm) (Reference LTC DWG # 05-08-1692) BOTTOM VIEW—EXPOSED PAD 4.00 ± 0.10 (4 SIDES) 0.72 ±0.05 0.75 ± 0.05 R = 0.115 TYP 0.55 ± 0.20 15 16 PIN 1 TOP MARK 1 4.35 ± 0.05 2.15 ± 0.05 2.90 ± 0.05 (4 SIDES) 2.15 ± 0.10 (4-SIDES) PACKAGE OUTLINE 0.30 ±0.05 0.65 BCS RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS 2 (UF) QFN 0802 0.200 REF 0.00 – 0.05 0.30 ± 0.05 0.65 BSC NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. ALL DIMENSIONS ARE IN MILLIMETERS 3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 4. EXPOSED PAD SHALL BE SOLDER PLATED 5520f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT5520 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS Infrastructure LT5511 High Signal Level Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 DC-3GHz High Signal Level Downconverting Mixer RF Input to 3GHz, 20dBm IIP3, Integrated LO Buffer LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3,Integrated LO Quadrature Generator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3,Integrated LO Quadrature Generator LT5522 600MHz to 2.7GHz High Signal Level Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF and LO Ports LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply LTC5505 RF Power Detectors with >40dB Dynamic Range 300MHz to 3GHz, Temperature Compensated, 2.7V to 5.5V Supply LTC5507 100kHz to 1000MHz RF Power Detector 300MHz to 3GHz, Temperature Compensated, 2.7V to 5.5V Supply LTC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Temperature Compensated, SC70 Package LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset RF Power Detectors RF Receiver Building Blocks LT5500 1.8GHz to 2.7GHz Receiver Front End 1.8V to 5.25V Supply, Dual-Gain LNA, Mixer LO Buffer LT5502 400MHz Quadrature IF Demodulator with RSSI 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range LT5503 1.2GHz to 2.7GHz Direct IQ Modulator and Upconverting Mixer 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth LT5506 500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain, 8.8MHz Baseband Bandwidth LT5546 500MHz Ouadrature IF Demodulator with VGA and 17MHz Baseband Bandwidth 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –7dB to 56dB Linear Power Gain 5520f 12 Linear Technology Corporation LT/TP 1103 1K • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com LINEAR TECHNOLOGY CORPORATION 2003