LINER LT5557

Electrical Specifications Subject to Change
LTC5590
Dual 600MHz to 1.7GHz
High Dynamic Range
Downconverting Mixer
Description
Features
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Conversion Gain: 8.7dB at 900MHz
IIP3: 26dBm at 900MHz
Noise Figure: 9.7dB at 900MHz
15.6dB NF Under 5dBm Blocking
High Input P1dB; 14.1dBm at 5V
53dB Channel-to-Channel Isolation
1.25W Power Consumption at 3.3V
Low Current Mode for <800mW Consumption
Enable Pins for Each Channel
50Ω Single-Ended RF and LO Inputs
LO Input Matched In All Modes
0dBm LO Drive Level
Small Package and Solution Size
–40°C to 105°C Operation
The LTC®5590 is part of a family of dual-channel high dynamic range, high gain downconverting mixers covering
the 600MHz to 4GHz RF frequency range. The LTC5590
is optimized for 600MHz to 1.7GHz RF applications. The
LO frequency must fall within the 700MHz to 1.5GHz
range for optimum performance. A typical application
is a LTE or GSM receiver with a 700MHz to 915MHz RF
input and high side LO.
The LTC5590’s high conversion gain and high dynamic
range enable the use of lossy IF filters in high selectivity
receiver designs, while minimizing the total solution cost,
board space and system-level variation. A low current
mode is provided for additional power savings and each
of the mixer channels has independent shutdown control.
Applications
High Dynamic Range Dual Downconverting Mixer Family
3G/4G Wireless Infrastructure Diversity Receivers
(LTE, CDMA, GSM)
n MIMO Infrastructure Receivers
n High Dynamic Range Downmixer Applications
n
PART NUMBER
RF RANGE
LO RANGE
LTC5590
600MHz to 1.7GHz
700MHz to 1.5GHz
LTC5591
1.3GHz to 2.3GHz
1.4GHz to 2.1GHz
LTC5592
1.6GHz to 2.7GHz
1.7GHz to 2.5GHz
LTC5593
2.3GHz to 4GHz
2.4GHz to 3.6GHz
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
Typical Application
Wideband Receiver
190MHz
SAW
1µF
22pF
150nH
IFA+
RF
700MHz TO
915MHz
LNA
IF
AMP
BIAS
10pF
SYNTH
IF
AMP
1nF
VCC
22pF
1nF 190MHz
SAW
24
NF
23
9
GC
8
22
21
TC = 25°C
LO = 1090MHz
RF = 900 ±30MHz
TEST CIRCUIT IN FIGURE 1
5
160
VCCB
150nH
26
25
10
6
ENB
(0V/3.3V)
BIAS
IFB–
IIP3
12
7
ENB
150nH
22pF
LO
LO 1090MHz
LO
AMP
IFB+
VCCIF
ENA
(0V/3.3V)
RFA
RFB
27
13
VCC
3.3V
1µF 180mA
11
ENA
LO
AMP
LNA
22pF
VCCA
IFA–
IMAGE
BPF 100pF
RF
700MHz TO
915MHz
ADC
170
180
200
190
IF FREQUENCY (MHz)
IIP3 (dBm)
IMAGE
BPF 100pF
IF
AMP
1nF
150nH
GAIN (dB), NF (dB)
1nF
VCCIF
3.3V or 5V
200mA
Wideband Conversion Gain
NF and IIP3 vs IF Frequency
(Mixer Only, Measured on
Evaluation Board)
190MHz
BPF
20
210
19
220
5590 TA01b
190MHz
BPF
IF
AMP
ADC
5590 TA01a
5590p
1
LTC5590
Absolute Maximum Ratings
Pin Configuration
(Note 1)
Mixer Supply Voltage (VCC)......................................4.0V
IF Supply Voltage (VCCIF)..........................................5.5V
Enable Voltage (ENA, ENB)...............–0.3V to VCC + 0.3V
Power Select Voltage (ISEL) .............–0.3V to VCC + 0.3V
LO Input Power (1GHz to 3GHz)..............................9dBm
LO Input DC Voltage................................................ ±0.1V
RFA, RFB Input Power (1GHz to 3GHz).................15dBm
RFA, RFB Input DC Voltage..................................... ±0.1V
Operating Temperature Range (TC)......... –40°C to 105°C
Storage Temperature Range................... –65°C to 150°C
Junction Temperature (TJ)..................................... 150°C
VCCA
IFBA
IFA–
IFA+
IFGNDA
GND
TOP VIEW
24 23 22 21 20 19
RFA 1
18 ISEL
CTA 2
17 ENA
GND 3
16 LO
25
GND
GND 4
15 GND
13 GND
VCCB
IFBB
9 10 11 12
IFB–
8
IFB+
7
GND
14 ENB
RFB 6
IFGNDB
CTB 5
UH PACKAGE
24-LEAD (5mm × 5mm) PLASTIC QFN
TJMAX = 150°C, θJC = 7°C/W
EXPOSED PAD (PIN 25) IS GND, MUST BE SOLDERED TO PCB
Order Information
LEAD FREE FINISH
TAPE AND REEL
PART MARKING
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LTC5590IUH#PBF
LTC5590IUH#TRPBF
5590
24-Lead (5mm × 5mm) Plastic QFN
–40°C to 105°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
V
DC
Electrical Characteristics CC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C,
unless otherwise noted. Test circuit shown in Figure 1. (Note 2)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VCCA, VCCB Supply Voltage (Pins 12, 19)
3.1
3.3
3.5
V
VCCIFA, VCCIFB Supply Voltage (Pins 9, 10, 21, 22)
3.1
3.3
5.3
V
Mixer Supply Current (Pins 12, 19)
188
TBD
mA
IF Amplifier Supply Current (Pins 9, 10, 21, 22)
191
TBD
mA
Total Supply Current (Pins 9, 10, 12, 19, 21, 22)
379
TBD
mA
500
µA
Power Supply Requirements (VCCA, VCCB, VCCIFA, VCCIFB)
Total Supply Current – Shutdown
ENA = ENB = Low
Enable Logic Input (ENA, ENB) High = On, Low = Off
ENA, ENB Input High Voltage (On)
2.5
V
ENA, ENB Input Low Voltage (Off)
ENA, ENB Input Current
–0.3V to VCC + 0.3V
–20
0.3
V
30
µA
Turn On Time
1
µs
Turn Off Time
1.5
µs
5590p
2
LTC5590
V
DC
Electrical Characteristics CC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C,
unless otherwise noted. Test circuit shown in Figure 1. (Note 2)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Low Current Mode Logic Input (ISEL) High = Low Power, Low = Normal Power Mode
ISEL Input High Voltage
2.5
V
ISEL Input Low Voltage
ISEL Input Current
–0.3V to VCC + 0.3V
–20
0.3
V
30
µA
Low Current Mode Current Consumption (ISEL = High)
Mixer Supply Current (Pins 12, 19)
123
TBD
mA
IF Amplifier Supply Current (Pins 9, 10, 21, 22)
116
TBD
mA
Total Supply Current (Pins 9, 10, 12, 19, 21, 22)
239
TBD
mA
V
AC
Electrical Characteristics CC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C,
PLO = 0dBm, PRF = –3dBm (∆f = 2MHz for two tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)
PARAMETER
CONDITIONS
MIN
LO Input Frequency Range
TYP
MAX
UNITS
700 to 1500
MHz
1100 to 1700
600 to 1100
MHz
MHz
5 to 500
MHz
RF Input Frequency Range
Low Side LO
High Side LO
IF Output Frequency Range
Requires External Matching
RF Input Return Loss
ZO = 50Ω, 700MHz to 1600MHz
>12
dB
LO Input Return Loss
ZO = 50Ω, 700MHz to 1500MHz
>12
dB
IF Output Impedance
Differential at 190MHz
300Ω||2.3pF
R||C
LO Input Power
fLO = 700MHz to 1500MHz
–4
0
6
dBm
LO to RF Leakage
fLO = 700MHz to 1500MHz
<–36
dBm
LO to IF Leakage
fLO = 700MHz to 1500MHz
<–26
dBm
RF to LO Isolation
fRF = 600MHz to 1700MHz
>57
dB
RF to IF Isolation
fRF = 600MHz to 1700MHz
>17
dB
Channel-to-Channel Isolation
fRF = 600MHz to 1700MHz
53
dB
High Side LO Downmixer Application: ISEL = Low, RF = 700MHz to 1100MHz, IF = 190MHz, fLO = fRF + fIF
PARAMETER
CONDITIONS
MIN
TYP
Conversion Gain
RF = 700MHz
RF = 900MHz
RF = 1100MHz
TBD
8.6
8.7
8.5
dB
dB
dB
Conversion Gain Flatness
RF = 900 ±30MHz, LO = 1090MHz, IF = 190 ±30MHz
±0.25
dB
–0.006
dB/°C
25.3
26.0
24.8
dBm
dBm
dBm
Conversion Gain vs Temperature
TC = –40ºC to 105ºC, RF = 1950MHz
Input 3rd Order Intercept
RF = 700MHz
RF = 900MHz
RF = 1100MHz
SSB Noise Figure
RF = 700MHz
RF = 900MHz
RF = 1100MHz
TBD
9.3
9.7
9.9
MAX
TBD
UNITS
dB
dB
dB
5590p
3
LTC5590
V
AC
Electrical Characteristics CC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, TC = 25°C, PLO = 0dBm,
PRF = –3dBm (∆f = 2MHz for two tone IIP3 tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3)
High Side LO Downmixer Application: ISEL = Low, RF = 700MHz to 1100MHz, IF = 190MHz, fLO = fRF + fIF
PARAMETER
CONDITIONS
MIN
SSB Noise Figure Under Blocking
fRF = 900MHz, fLO = 1090MHz, fBLOCK = 800MHz
PBLOCK = 5dBm
PBLOCK = 10dBm
2LO-2RF-Output Spurious Product
(fRF = fLO – fIF/2)
TYP
MAX
UNITS
15.6
21.2
dB
dB
fRF = 995MHz at –10dBm, fLO = 1090MHz,
fIF = 190MHz
–77
dBc
3LO-3RF Output Spurious Product
(fRF = fLO – fIF/3)
fRF = 1026.67MHz at –10dBm, fLO = 1090MHz,
fIF = 190MHz
–77
dBc
Input 1dB Compression
fRF = 900MHz, VCCIF = 3.3V
fRF = 900MHz, VCCIF = 5V
10.7
14.1
dBm
dBm
Low Power Mode, High Side LO Downmixer Application: ISEL = High, RF = 700MHz to 1100MHz, IF = 190MHz, fLO = fRF + fIF
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Gain
RF = 900MHz
7.7
dB
Input 3rd Order Intercept
RF = 900MHz
21.5
dBm
SSB Noise Figure
RF = 900MHz
9.9
dB
Input 1dB Compression
RF = 900MHz, VCCIF = 3.3V
RF = 900MHz, VCCIF = 5V
10.4
10.9
dBm
dBm
Low Side LO Downmixer Application: ISEL = Low, RF = 1100MHz to 1600MHz, IF = 190MHz, fLO = fRF – fIF
PARAMETER
CONDITIONS
Conversion Gain
RF = 1200MHz
RF = 1400MHz
RF = 1600MHz
Conversion Gain Flatness
MIN
TYP
MAX
UNITS
8.6
8.4
7.7
dB
dB
dB
RF = 1600 ±30MHz, LO = 1790MHz, IF = 190 ±30MHz
±0.22
dB
Conversion Gain vs Temperature
TC = –40ºC to 105ºC, RF = 1600MHz
–0.008
dB/°C
Input 3rd Order Intercept
RF = 1200MHz
RF = 1400MHz
RF = 1600MHz
27.5
27.3
27.2
dBm
dBm
dBm
SSB Noise Figure
RF = 1200MHz
RF = 1400MHz
RF = 1600MHz
9.9
9.7
10.4
dB
dB
dB
SSB Noise Figure Under Blocking
fRF = 1400MHz, fLO = 1210MHz, fBLOCK = 1500MHz
PBLOCK = 5dBm
PBLOCK = 10dBm
15.0
20.8
dB
dB
2RF-2LO Output Spurious Product
(fRF = fLO + fIF/2)
fRF = 1305MHz at –10dBm, fLO = 1210MHz,
fIF = 190MHz
–72
dBc
3RF-3LO Output Spurious Product
(fRF = fLO + fIF/3)
fRF = 1273.33MHz at –10dBm, fLO = 1210MHz,
fIF = 190MHz
–72
dBc
Input 1dB Compression
RF = 1400MHz, VCCIF = 3.3V
RF = 1400MHz, VCCIF = 5V
11.0
14.4
dBm
dBm
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC5590 is guaranteed functional over the case operating
temperature range of –40°C to 105°C. (θJC = 7°C/W)
Note 3: SSB Noise Figure measured with a small-signal noise source,
bandpass filter and 6dB matching pad on RF input, bandpass filter and
6dB matching pad on the LO input, and no other RF signals applied.
Note 4: Channel A to channel B isolation is measured as the relative IF
output power of channel B to channel A, with the RF input signal applied to
channel A. The RF input of channel B is 50Ω terminated and both mixers
are enabled.
5590p
4
LTC5590
Typical AC Performance Characteristics
High Side LO
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests,
∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain and IIP3 vs
RF Frequency
17
16
26
16
15
15
14
14
–40°C
25°C
85°C
105°C
20
16
12
11
11
10
14
10
9
9
8
8
7
7
GC
8
6
600
700
6
1200
800
900 1000 1100
RF FREQUENCY (MHz)
6
600
45
40
700
800
900 1000 1100
RF FREQUENCY (MHz)
30
600
1200
700
800
900 1000 1100
RF FREQUENCY (MHz)
1200
5590 G03
5590 G02
700Mhz Conversion Gain, IIP3
and NF vs LO Input Power
1100MHz Conversion Gain, IIP3
and NF vs LO Input Power
900MHz Conversion Gain, IIP3
and NF vs LO Input Power
28
22
28
22
20
26
20
26
20
24
18
24
18
24
16
22
16
22
IIP3
22
12
10
16
14
8
NF
12
10
6
6
–6
–4
4
–2
2
0
LO INPUT POWER (dBm)
6
18
14
12
16
10
14
8
NF
12
6
GC
8
2
8
20
10
4
GC
–40°C
25°C
85°C
6
0
–6
–4
4
–2
2
0
LO INPUT POWER (dBm)
6
18
IIP3
20
18
Conversion Gain, IIP3 and NF vs
Supply Voltage (Single Supply)
4
10
2
8
0
6
–6
28
26
20
26
24
18
24
18
24
14
8
NF
12
6
GC
10
GC (dB), IIP3 (dBm)
10
22
18
12
10
14
8
NF
12
10
2
8
6
0
3.6
6
5590 G07
14
16
8
3.5
3.2
3.1
3.4
3.3
VCC, VCCIF SUPPLY VOLTAGE (V)
–40°C
25°C
85°C
20
4
3
16
6
GC
4
2
3
4
3.5
5
4.5
VCCIF SUPPLY VOLTAGE (V)
0
5.5
5590 G08
SSB NF (dB)
12
SSB NF (dB)
14
IIP3
GC (dB), IIP3 (dBm), P1dB (dBm)
22
16
4
–2
2
0
LO INPUT POWER (dBm)
6
0
Conversion Gain, IIP3 and RF Input
P1dB vs Temperature
28
18
–4
5590 G06
20
20
4
2
Conversion Gain, IIP3 and NF vs
Supply Voltage (Dual Supply)
16
6
GC
22
–40°C
25°C
85°C
8
NF
12
26
IIP3
12
10
14
28
22
14
16
5590 G05
5590 G04
16
–40°C
25°C
85°C
SSB NF (dB)
20
18
14
IIP3
SSB NF (dB)
–40°C
25°C
85°C
GC (dB), IIP3 (dBm)
22
26
GC (dB), IIP3 (dBm)
28
SSB NF (dB)
GC (dB), IIP3 (dBm)
50
35
5590 G01
GC (dB), IIP3 (dBm)
55
12
12
10
–40°C
25°C
85°C
105°C
13
13
GC (dB)
18
Channel Isolation vs RF Frequency
60
ISOLATION (dB)
IIP3
22
SSB NF (dB)
24
IIP3 (dBm)
SSB NF vs RF Frequency
28
IIP3
22
VCCIF = 3.3V
VCCIF = 5V
20
18
16
14
P1dB
12
10
8
6
–40
GC
20
–10
80
50
CASE TEMPERATURE (°C)
110
5590 G09
5590p
5
LTC5590
Typical AC Performance Characteristics
High Side LO
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests,
∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
Single-Tone IF Output Power, 2 × 2
and 3 × 3 Spurs vs RF Input Power
20
20
10
10
–20
–30
–40
–50
IM3
–60
IM5
–10
–20
–30
–40
–50
LO = 1090MHz
PLO = 0dBm
–60
–70
–6
–9
3
–3
0
RF INPUT POWER (dBm/TONE)
–80
–12
6
3LO-3RF
RF = 1026.67MHz
2LO-2RF
RF = 995MHz
–70
–80
–12
–6
0
–3
RF INPUT POWER (dBm)
–9
18
RF = 900MHz
BLOCKER = 800MHz
16
14
–15
5
–10
–5
0
RF BLOCKER POWER (dBm)
10
6
–3
3
0
LO INPUT POWER (dBm)
RF Isolation vs RF Frequency
–10
60
RF-LO
50
–20
LO-IF
–30
–40
LO-RF
40
30
RF-IF
20
10
–60
800
5590 G13
TBD
–6
5590 G12
70
–50
8
–20
3LO-3RF
RF = 1026.67MHz
–80
0
12
10
2LO-2RF
RF = 995MHz
–75
LO Leakage vs LO Frequency
LO LEAKAGE (dBm)
SSB NF (dBc)
20
–70
5590 G11
PLO = –3dBm
PLO = 0dBm
PLO = 3dBm
PLO = 6dBm
22
RF = 900MHz
PIN = –10dBm
LO = 1090MHz
–65
–85
6
3
5590 G10
SSB Noise Figure vs RF Blocker
Power
24
RELATIVE SPUR LEVEL (dBc)
–10
–60
IFOUT
RF = 900MHz
0
IFOUT
2 × 2 and 3 × 3 Spur Suppression
vs LO Input Power
ISOLATION (dB)
0
OUTPUT POWER (dBm)
OUTPUT POWER/TONE (dBm)
2-Tone IF Output Power, IM3 and
IM5 vs RF Input Power
900
1000 1100 1200 1300
LO FREQUENCY (MHz)
1400
0
600
800
900 1000 1100
RF FREQUENCY (MHz)
1200
5590 G15
5590 G14
TBD
700
TBD
5590p
6
LTC5590
Typical AC Performance Characteristics
Low Power Mode, High Side LO
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = High, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests,
∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain and IIP3 vs
RF Frequency
16
22
15
21
14
9
10
8
15
14
7
13
6
GC
12
600
700
8
6
600
700
800
900 1000 1100
RF FREQUENCY (MHz)
5590 G19
22
14
10
8
NF
GC
6
–40°C
25°C
85°C
16
12
14
10
12
8
6
10
4
8
2
6
NF
GC
–4
–6
4
–2
2
0
LO INPUT POWER (dBm)
5590 G22
6
20
16
18
14
NF
16
10
6
10
4
8
2
6
24
22
18
22
20
16
20
16
12
3
3.5
3.2
3.1
3.4
3.3
VCC, VCCIF Supply Voltage (V)
16
12
10
12
10
4
8
2
3.6
6
5590 G25
14
14
6
GC
8
6
8
NF
10
18
8
NF
6
GC
3
4
5
4
3.5
4.5
VCC, VCCIF Supply Voltage (V)
2
5.5
5590 G26
SSB NF (dB)
10
14
SSB NF (dB)
12
–40°C
25°C
85°C
GC (dB), IIP3 (dBm), P1dB (dBm)
20
GC (dB), IIP3 (dBm)
24
18
14
6
2
Conversion Gain, IIP3 and RF
Input P1dB vs Temperature
20
16
4
–2
2
0
LO INPUT POWER (dBm)
5590 G24
22
18
6
4
–4
–6
8
–40°C
25°C
85°C
GC
24
IIP3
12
14
12
Conversion Gain, IIP3 and NF vs
Supply Voltage (Dual Supply)
–40°C
25°C
85°C
18
IIP3
5590 G23
Conversion Gain, IIP3 and NF vs
Supply Voltage (Single Supply)
GC (dB), IIP3 (dBm)
14
20
SSB NF (dB)
12
16
IIP3
20
18
SSB NF (dB)
GC (dB), IIP3 (dBm)
18
12
IIP3
6
1100MHz Conversion Gain, IIP3
and NF vs LO Input Power
22
SSB NF (dB)
–40°C
25°C
85°C
4
–2
2
0
LO INPUT POWER (dBm)
3
–6
–9
0
–3
RF INPUT POWER (dBm/tone)
5590 G21
18
16
–4
IM5
–80
–12
1200
24
14
–6
–60
20
20
6
–50
24
18
8
IM3
–40
20
GC (dB), IIP3 (dBm)
IIP3
10
–30
900MHz Conversion Gain, IIP3
and NF vs LO Input Power
24
16
RF1 = 899MHz
RF2 = 901MHz
LO = 1090MHz
5590 G20
700MHz Conversion Gain, IIP3
and NF vs LO Input Power
22
–10
–20
–70
5
1200
800
900 1000 1100
RF FREQUENCY (MHz)
0
GC (dB), IIP3 (dBm)
16
10
IFOUT
10
12
SSB NF (dB)
IIP3 (dBm)
11
–40°C
25°C
85°C
105°C
17
GC (dB)
18
14
12
20
–40°C
25°C
85°C
105°C
13
IIP3
19
16
OUTPUT POWER (dBm/tone)
23
20
2-Tone IF Output Power, IM3 and
IM5 vs RF Input Power
SSB NF vs RF Frequency
20
18
IIP3
VCCIF = 3.3V
VCCIF = 5V
16
14
12
10
8
6
–40
P1dB
GC
80
20
–10
50
CASE TEMPERATURE (°C)
110
5590 G27
5590p
7
LTC5590
Typical AC Performance Characteristics
Low Side LO
VCC = 3.3V, VCCIF = 3.3V, ENA = ENB = High, ISEL = Low, TC = 25°C, PLO = 0dBm, PRF = –3dBm (–3dBm/tone for two-tone IIP3 tests,
∆f = 2MHz), IF = 190MHz, unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain and IIP3 vs
RF Frequency
16
15
15
14
14
13
13
12
12
IIP3
–40°C
25°C
85°C
105°C
18
11
10
16
GC
11
10
9
9
12
8
8
10
7
7
14
8
1100 1200
6
1700
1300 1400 1500 1600
RF FREQUENCY (MHz)
6
1100 1200
20
26
1300 1400 1500 1600
RF FREQUENCY (MHz)
12
8
NF
GC
–6
–4
2
–2
0
LO INPUT POWER (dBm)
4
6
IIP3
10
0
6
–6
30
20
26
–4
2
–2
0
LO INPUT POWER (dBm)
4
8
NF
GC
3
3.4
3.5
3.1
3.2
3.3
VCC, VCCIF SUPPLY VOLTAGE (V)
6
IIP3
–40°C
25°C
85°C
12
14
0
6
10
0
3.6
6
4
GC
–6
–4
2
–2
0
LO INPUT POWER (dBm)
24
30
20
26
16
8
NF
GC
4
4.5
5
3.5
4
VCCIF SUPPLY VOLTAGE (V)
4
6
0
Conversion Gain, IIP3 and
RF Input P1dB vs Temperature
12
3
8
NF
5590 G33
18
14
16
18
10
–40°C
25°C
85°C
22
4
5590 G34
20
IIP3
22
4
0
5.5
5590 G35
SSB NF (dB)
12
GC (dB), IIP3 (dBm)
24
18
6
26
Conversion Gain, IIP3 and NF vs
Supply Voltage (Dual Supply)
22
10
20
24
5590 G32
–40°C
25°C 16
85°C
14
30
8
NF
GC
4
SSB NF (dB)
GC (dB), IIP3 (dBm)
IIP3
24
12
14
10
5590 G30
16
18
Conversion Gain, IIP3 and NF vs
Supply Voltage (Single Supply)
30
0
5
–10
–5
RF BLOCKER LEVEL (dBm)
1600MHz Conversion Gain, IIP3
and NF vs LO Input Power
–40°C
25°C
85°C
22
5590 G31
26
–15
SSB NF (dB)
18
6
8
–20
1700
SSB NF (dB)
22
GC (dB), IIP3 (dBm)
30
SSB NF (dB)
GC (dB), IIP3 (dBm)
24
–40°C
25°C 16
85°C
10
14
1400MHz Conversion Gain, IIP3
and NF vs LO Input Power
30
14
16
5590 G29
1200MHz Conversion Gain, IIP3
and NF vs LO Input Power
IIP3
RF = 1400MHz
BLOCKER = 1500MHz
10
5590 G28
26
18
12
GC (dB), IIP3 (dBm)
20
20
PLO = –3dBm
PLO = 0dBm
PLO = 3dBm
PLO = 6dBm
22
GC (dB), IIP3 (dBm), P1dB (dBm)
22
GC (dB)
IIP3 (dBm)
24
24
–40°C
25°C
85°C
105°C
SSB NF (dB)
16
28
SSB NF (dB)
30
26
SSB Noise Figure vs RF Blocker
Level
SSB NF vs RF Frequency
IIP3
VCCIF = 3.3V
VCCIF = 5V
22
18
14
P1dB
10
6
–40
GC
50
80
–10
20
CASE TEMPERATURE (°C)
110
5590 G36
5590p
8
LTC5590
Typical DC Performance Characteristics
ENA = ENB = High, test circuit shown in Figure 1.
ISEL = Low
196
VCCIF Supply Current vs
Supply Voltage (IF Amplifier)
260
VCCIF = VCC
240
105°C
192
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
194
85°C
190
188
25°C
186
–40°C
184
480
105°C
3
3.1
3.3
3.4
3.5
3.2
VCC SUPPLY VOLTAGE (V)
440
200
25°C
180
160
120
3.6
460
85°C
220
–40°C
140
182
180
VCC = 3.3V
Total Supply Current vs
Temperature (VCC + VCCIF)
SUPPLY CURRENT (mA)
VCC Supply Current vs Supply
Voltage (Mixer and LO Amplifier)
VCC = 3.3V, VCCIF = 5V
(DUAL SUPPLY)
420
400
380
VCC = VCCIF = 3.3V
(SINGLE SUPPLY)
360
340
320
300
3
3.3
3.6 3.9 4.2 4.5 4.8 5.1
VCCIF SUPPLY VOLTAGE (V)
280
–40
5.4
20
50
80
–10
CASE TEMPERATURE (°C)
5590 G38
5590 G37
110
5590 G39
ISEL = High
VCC Supply Current vs Supply
Voltage (Mixer and LO Amplifier)
170
VCCIF = VCC
85°C
124
25°C
122
120
–40°C
3
3.1
3.3
3.4
3.5
3.2
VCC SUPPLY VOLTAGE (V)
25°C
110
–40°C
90
118
116
85°C
130
3.6
5590 G40
70
Total Supply Current vs
Temperature (VCC + VCCIF)
280
105°C
150
105°C
126
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
128
300
VCC = 3.3V
SUPPLY CURRENT (mA)
130
VCCIF Supply Current vs Supply
Voltage (IF Amplifier)
260
240
220
VCC = 3.3V, VCCIF = 5V
(DUAL SUPPLY)
VCC = VCCIF = 3.3V
(SINGLE SUPPLY)
200
3
3.3
3.6 3.9 4.2 4.5 4.8 5.1
VCCIF SUPPLY VOLTAGE (V)
5.4
5590 G41
180
–40
20
50
80
–10
CASE TEMPERATURE (°C)
110
5590 G42
5590p
9
LTC5590
Pin Functions
RFA, RFB (Pins 1, 6): Single-Ended RF Inputs for Channels A and B. These pins are internally connected to the
primary sides of the RF input transformers, which have
low DC resistance to ground. Series DC-blocking capacitors should be used to avoid damage to the integrated
transformer when DC voltage is present at the RF inputs.
The RF inputs are impedance matched when the LO input
is driven with a 0±6dBm source between 700MHz and
1.5GHz and the channels are enabled.
CTA, CTB (Pins 2, 5): RF Transformer Secondary CenterTap on Channels A and B. These pins may require bypass
capacitors to ground to optimize IIP3 performance. Each
pin has an internally generated bias voltage of 1.2V and
must be DC-isolated from ground and VCC.
GND (Pins 3, 4, 7, 13, 15, 24, Exposed Pad Pin 25):
Ground. These pins must be soldered to the RF ground
plane on the circuit board. The exposed pad metal of the
package provides both electrical contact to ground and
good thermal contact to the printed circuit board.
IFGNDB, IFGNDA (Pins 8, 23): DC Ground Returns for the
IF Amplifiers. These pins must be connected to ground to
complete the DC current paths for the IF amplifiers. Chip
inductors may be used to tune LO-IF and RF-IF leakage.
Typical DC current is 95mA for each pin.
IFB+, IFB–, IFA–, IFA+ (Pins 9, 10, 21, 22): Open-Collector
Differential Outputs for the IF Amplifiers of Channels B and
A. These pins must be connected to a DC supply through
impedance matching inductors, or transformer center-taps.
Typical DC current consumption is 48mA into each pin.
IFBB, IFBA (Pins 11, 20): Bias Adjust Pins for the IF
Amplifiers. These pins allow independent adjustment
of the internal IF buffer currents for channels B and A,
respectively. The typical DC voltage on these pins is 2.2V.
If not used, these pins must be DC isolated from ground
and VCC.
VCCB and VCCA (Pins 12, 19): Power Supply Pins for the
LO Buffers and Bias Circuits. These pins must be connected to a regulated 3.3V supply with bypass capacitors
located close to the pins. Typical current consumption is
94mA per pin.
ENB, ENA (Pins 14, 17): Enable Pins. These pins allow
Channels B and A, respectively, to be independently enabled. An applied voltage of greater than 2.5V activates
the associated channel while a voltage of less than 0.3V
disables the channel. Typical input current is less than
10μA. These pins must not be allowed to float.
LO (Pin 16): Single-Ended Local Oscillator Input. This
pin is internally connected to the primary side of the LO
input transformer and has a low DC resistance to ground.
Series DC-blocking capacitors should be used to avoid
damage to the integrated transformer when DC voltage
present at LO input. The LO input is internally matched
to 50Ω for all states of ENA and ENB.
ISEL (Pin 18): Low Current Select Pin. When this pin is
pulled low (<0.3V), both mixer channels are biased at
the normal current level for best RF performance. When
greater than 2.5V is applied, both channels operate at
reduced current, which provides reasonable performance
at lower power consumption.
5590p
10
LTC5590
Block Diagram
24
GND
23
22
IFGNDA IFA+
21
IFA–
20
19
IFBA VCCA
IF
AMP
1
2
BIAS
ISEL
ENA
RFA
LO
AMP
PASS
MIX
CTA
LO
18
17
16
3 GND
4 GND
CTB
5
6
GND 15
LO
AMP
PASS
MIX
RFB
ENB
IF
AMP
14
BIAS
GND 13
7
GND
IFB+
IFGNDB
8
9
IFB–
10
IFBB
11
VCCB
12
5590 BD
5590p
11
LTC5590
Test Circuit
T1A
4:1
IFA
50Ω
C7A
L1A
VCCIF
3.3V TO 5V
200mA
C6
RFA
50Ω
VCC
3.3V
180mA
C5A
24
C1A
23
GND IFGNDA
22
21
IFA+
–
IFA
C3A
20
19
IFBA
VCCA
ISEL 18
ISEL
(0V/3.3V)
2 CTA
ENA 17
ENA
(0V/3.3V)
3 GND
LO 16
LTC5590
4 GND
GND 15
5 CTB
ENB 14
GND
DC1710A
BOARD
BIAS STACK-UP
GND (NELCO N4000-13)
0.062”
0.015”
C4
1 RFA
C2
RFB
50Ω
RF
0.015”
L2A
LO
50Ω
ENB
(0V/3.3V)
C1B
6 RFB
GND 13
GND IFGNDA IFB+
7
8
9
IFB–
IFBB
VCCB
10
11
12
5590 TC01
C3B
C5B
L1B
L2B
C7B
4:1
T1B
IFB
50Ω
L1, L2 vs IF FREQUENCIES
REF DES
VALUE
SIZE
COMMENTS
IF (MHz)
L1, L2 (nH)
C1A, C1B
100pF
0402
AVX
140
270
C2
10pF
0402
AVX
190
150
22pF
0402
AVX
240
100
C3A, C3B
C5A, C5B
300
56
C4, C6
1µF
0603
AVX
380
33
C7A, C7B
1000pF
0402
AVX
450
22
L1, L2
150nH
0603
T1A, T2B
TC1-1W-7ALN+
Coilcraft
Mini-Circuits
Figure 1. Standard Downmixer Test Circuit Schematic (190MHz)
5590p
12
LTC5590
Applications Information
Introduction
The LTC5590 consists of two identical mixer channels
driven by a common LO input signal. Each high linearity
mixer consists of a passive double-balanced mixer core,
IF buffer amplifier, LO buffer amplifier and bias/enable
circuits. See the Pin Functions and Block Diagram sections
for a description of each pin. Each of the mixers can be
shutdown independently to reduce power consumption and
low current mode can be selected that allows a trade-off
between performance and power consumption. The RF and
LO inputs are single-ended and are internally matched to
50Ω. Low side or high side LO injection can be used. The
IF outputs are differential. The evaluation circuit, shown in
Figure 1, utilizes bandpass IF output matching and an IF
transformer to realize a 50Ω single-ended IF output. The
evaluation board layout is shown in Figure 2.
The secondary winding of the RF transformer is internally
connected to the channel A passive mixer core. The centertap of the transformer secondary is connected to Pin 2
(CTA) to allow the connection of bypass capacitor, C8A.
The value of C8A is LO frequency-dependent and is not
required for most applications, though it can improve IIP3
in some cases. When used, it should be located within
2mm of Pin 2 for proper high frequency decoupling. The
nominal DC voltage on the CTA pin is 1.2V.
For the RF inputs to be properly matched, the appropriate
LO signal must be applied to the LO input. A broadband
input match is realized with C1A = 100pF. The measured
input return loss is shown in Figure 4 for LO frequencies
of 0.7GHz, 1.09GHz and 1.5GHz. These LO frequencies
correspond to lower, middle and upper values in the LO
range. As shown in Figure 4, the RF input impedance is
dependent on LO frequency, although a single value of
C1A is adequate to cover the 700MHz to 1.5GHz RF band.
LTC5590
RFA
TO CHANNEL A
MIXER
C1A
1
2
RFA
CTA
C8A
5590 F03
Figure 3. Channel A RF Input Schematic
5590 F02
RF Inputs
The RF inputs of channels A and B are identical. The RF
input of channel A, shown in Figure 3, is connected to the
primary winding of an integrated transformer. A 50Ω match
is realized when a series external capacitor, C1A, is connected to the RF input. C1A is also needed for DC blocking
if the source has DC voltage present, since the primary
side of the RF transformer is internally DC-grounded. The
DC resistance of the primary is approximately 4.5Ω.
–5
RETURN LOSS (dB)
Figure 2. Evaluation Board Layout
0
LO = 700MHz
LO = 1090MHz
LO = 1500MHz
–10
–15
–20
C1 = 100pF
–25
600 700 800 900 1000 1100 1200 1300 1400
FREQUENCY (MHz)
5590 F04
Figure 4. RF Port Return Loss
5590p
13
LTC5590
Applications Information
Table 1. RF Input Impedance and S11
(at Pin 1, No External Matching, fLO = 1.09GHz)
FREQUENCY
(GHz)
RF INPUT
IMPEDANCE
S11
MAG
ANGLE
0.6
34.2 + j24.5
0.33
107
0.7
41.3 + j22.4
0.26
97
0.8
48.5 + j18.1
0.18
84
0.9
54.3 + j10.1
0.10
61
1.0
54.2 – j4.6
0.06
–45
1.1
38.4 – j16
0.22
–116
1.2
29.3 – j9.4
0.29
–149
1.3
27.7 – j4.5
0.29
–165
1.4
27.4 – j1.6
0.29
–175
1.5
27.8 – j0.1
0.28
–180
1.6
29.4 + j0.2
0.26
179
1.7
31.2 –j0.5
0.23
–178
LTC5590
BIAS
ISEL
ENA
TO
MIXER B
ENB
BIAS
0
BOTH CHANNELS ON
ONE CHANNEL ON
BOTH CHANNELS OFF
–5
–10
–15
–20
C2 = 10pF
–25
700 800 900 1000 1100 1200 1300 1400 1500
FREQUENCY (MHz)
5590 F06
17
Figure 6. LO Input Return Loss
C2
LO
16
14
5590 F05
Figure 5. LO Input Schematic
LO Input
The LO input, shown in Figure 5, is connected to the
primary winding of an integrated transformer. A 50Ω
impedance match is realized at the LO port by adding
an external series capacitor, C2. This capacitor is also
needed for DC blocking if the LO source has DC voltage
present, since the primary side of the LO transformer is
DC-grounded internally. The DC resistance of the primary
is approximately 4.5Ω.
14
The LO port is always 50Ω matched when VCC is applied,
even when one or both of the channels is disabled. This
helps to reduce frequency pulling of the LO source when
the mixer is switched between different operating states.
Figure 6 illustrates the LO port return loss for the different
operating modes.
18
TO
MIXER A
LO
The secondary of the transformer drives a pair of high
speed limiting differential amplifiers for channels A and B.
The LTC5590’s LO amplifiers are optimized for the 700MHz
to 1.5GHz LO frequency range; however, LO frequencies
outside this frequency range may be used with degraded
performance.
RETURN LOSS (dB)
The RF input impedance and input reflection coefficient,
versus RF frequency, are listed in Table 1. The reference
plane for this data is Pin 1 of the IC, with no external
matching, and the LO is driven at 1.09GHz.
The nominal LO input level is 0dBm, though the limiting
amplifiers will deliver excellent performance over a ±6dBm
input power range. Table 2 lists the LO input impedance
and input reflection coefficient versus frequency.
Table 2. LO Input Impedance vs Frequency
(at Pin 16, No External Matching, ENA = ENB = High)
FREQUENCY
(GHz)
INPUT
IMPEDANCE
S11
MAG
ANGLE
0.7
29.7 + j34.7
0.46
97
0.8
39.9 + j34.1
0.37
86
0.9
48.7 + j26.6
0.26
78
1.0
50.8 + j15.1
0.15
78
1.1
46.5 + j6.2
0.07
116
1.2
39.9 + j2.5
0.12
165
1.3
34.0 + j1.4
0.19
174
1.4
29.2 + j2.1
0.26
173
1.5
25.6 + j3.8
0.33
168
5590p
LTC5590
Applications Information
IF Outputs
The IF amplifiers in channels A and B are identical. The IF
amplifier for channel A, shown in Figure 7, has differential open collector outputs (IFA+ and IFA–), a DC ground
return pin (IFGNDA), and a pin for adjusting the internal
bias (IFBA). The IF outputs must be biased at the supply voltage (VCCIFA), which is applied through matching
inductors L1A and L2A. Alternatively, the IF outputs can
be biased through the center tap of a transformer (T1A).
The common node of L1A and L2A can be connected to
the center tap of the transformer. Each IF output pin draws
approximately 48mA of DC supply current (96mA total).
An external load resistor, R2A, can be used to improve
impedance matching if desired.
For optimum single-ended performance, the differential
IF output must be combined through an external IF
transformer or a discrete IF balun circuit. The evaluation
board (see Figures 1 and 2) uses a 4:1 IF transformer for
impedance transformation and differential to single-ended
conversion. It is also possible to eliminate the IF transformer
and drive differential filters or amplifiers directly.
At IF frequencies, the IF output impedance can be modeled
as 300Ω in parallel with 2.3pF. The equivalent small-signal
model, including bondwire inductance, is shown in Figure 8.
Frequency-dependent differential IF output impedance is
listed in Table 3. This data is referenced to the package
pins (with no external components) and includes the effects of IC and package parasitics.
IFGNDA (Pin 23) must be grounded or the amplifier will
not draw DC current. Inductor L3A may improve LO-IF
and RF-IF leakage performance in some applications, but
is otherwise not necessary. Inductors should have small
resistance for DC. High DC resistance in L3A will reduce
the IF amplifier supply current, which will degrade RF
performance.
T1A
22
LTC5590
0.9nH
23
IGNDA
5590 F08
Figure 8. IF Output Small-Signal Model
L2A
VCCIFA
22
IFA+
R1A
(OPTION TO
REDUCE
DC POWER)
C5A
R2A
21
20
IFBA
IFA–
VCCA
IF
AMP
LTC5590
0.9nH
CIF
C7A
L3A (OR SHORT)
100mA
IF A–
RIF
IFA
4:1
L1A
21
IFA+
Bandpass IF Matching
The bandpass IF matching configuration, shown in Figures
1 and 7, is best suited for IF frequencies in the 90MHz to
500MHz range. Resistor R2A may be used to reduce the IF
output resistance for greater bandwidth and inductors L1A
and L2A resonate with the internal IF output capacitance
at the desired IF frequency. The value of L1A, L2A can be
estimated as follows:
4mA
L1A = L2A =
BIAS
5590 F07
Figure 7. IF Amplifier Schematic with Bandpass Match
1
(2πfIF ) 2 • 2 • CIF 


where CIF is the internal IF capacitance (listed in Table 3).
5590p
15
LTC5590
Applications Information
Values of L1A and L2A are tabulated in Figure 1 for various IF frequencies. The measured IF output return loss
for bandpass IF matching is plotted in Figure 9.
T1A
VCCIFA
3.1 TO 5.3V
C7A
C5A
L1A
Table 3. IF Output Impedance vs Frequency
L2A
R2A
DIFFERENTIAL OUTPUT
IMPEDANCE (RIF || XIF (CIF))
FREQUENCY (MHz)
IFA
50Ω
4:1
90
403 || – j610 (2.9pF)
140
384 || – j474 (2.4pF)
190
379 || – j381 (2.2pF)
240
380 || – j316 (2.1pF)
300
377 || – j253 (2.1pF)
380
376 || – j210 (2.0pF)
450
360 || – j177 (2.0pF)
C9A
22
IFA+
21
LTC5590
IFA–
5590 F10
Figure 10. IF Output with Lowpass Matching
0
–5
180nH
RETURN LOSS (dB)
0
RETURN LOSS (dB)
–5
–10
270nH
–15
100nH
–25
68nH
82nH + 1k
–15
–20
100nH
–25
150nH
–20
–10
–30
56nH
50
22nH
33nH
100
200
150
FREQUENCY (MHz)
250
5590 F11
50 100 150 200 250 300 350 400 450 500
FREQUENCY (MHz)
5590 F09
Figure 9. IF Output Return Loss with Bandpass Matching
Figure 11. IF Output Return Loss with Lowpass Matching
has been laid out to accommodate this matching topology
with only minor modifications.
Lowpass IF Matching
IF Amplifier Bias
For IF frequencies below 90MHz, the inductance values
become unreasonably high and the lowpass topology
shown in Figure 9 is preferred. This topology also can
provide improved RF to IF and LO to IF isolation. VCCIFA
is supplied through the center tap of the 4:1 transformer.
A lowpass impedance transformation is realized by shunt
elements R2A and C9A (in parallel with the internal RIF
and CIF), and series inductors L1A and L2A. Resistor
R2A is used to reduce the IF output resistance for greater
bandwidth, or it can be omitted for the highest conversion gain. The final impedance transformation to 50Ω is
realized by transformer T1A. The measured return loss
is shown in Figure 11 for different values of inductance
(C9A = OpF). The case with 82nH inductors and R2A = 1k
is also shown. The LTC5590 demo board (see Figure 2)
The IF amplifier delivers excellent performance with VCCIF
= 3.3V, which allows a single supply to be used for VCC and
VCCIF . At VCCIF = 3.3V, the RF input P1dB of the mixer is
limited by the output voltage swing. For higher P1dB, in
this case, resistor R2A (Figure 7) can be used to reduce
the output impedance and thus the voltage swing, thus
improving P1dB. The trade-off for improved P1dB will be
lower conversion gain.
With VCCIF increased to 5V the P1dB increases by over
3dB, at the expense of higher power consumption. Mixer
P1dB performance at 900MHz is tabulated in Table 4 for
VCCIF values of 3.3V and 5V. For the highest conversion
gain, high-Q wire-wound chip inductors are recommended
for L1A and L2A. Low cost multilayer chip inductors may
be substituted, with a slight reduction in conversion gain.
5590p
16
LTC5590
Applications Information
Table 4. Performance Comparison with VCCIF = 3.3V and 5V
(RF = 900MHz, High Side LO, IF = 190MHz)
VCCIF
(V)
R2A
(Ω)
ICCIF
(mA)
GC
(dB)
P1dB
(dBm)
IIP3
(dBm)
NF
(dB)
3.3
Open
191
8.7
10.7
26.0
9.7
1k
191
7.5
11.4
26.0
9.75
5
Open
200
8.7
14.1
25.5
9.8
The IFBA pin (Pin 20) is available for reducing the DC
current consumption of the IF amplifier, at the expense of
IIP3. The nominal DC voltage at Pin 20 is 2.1V, and this pin
should be left open-circuited for optimum performance.
The internal bias circuit produces a 4mA reference for the
IF amplifier, which causes the amplifier to draw approximately 100mA. If resistor R1A is connected to Pin 20 as
shown in Figure 7, a portion of the reference current can
be shunted to ground, resulting in reduced IF amplifier
current. For example, R1A = 1k will shunt away 1.5mA
from Pin 20 and the IF amplifier current will be reduced
by 38% to approximately 62mA. Table 5 summarizes RF
performance versus IF amplifier current.
Table 5. Mixer Performance with Reduced IF Amplifier Current
RF = 900MHz, High Side LO, IF = 190MHz, VCC = VCCIF = 3.3V
R1
ICCIF
(mA)
GC
(dB)
IIP3
(dBm)
P1dB
(dB)
NF
(dB)
Open
95.5
8.7
26.0
10.7
9.7
4.7kΩ
86.5
8.7
25.6
10.6
9.7
2.2kΩ
78.3
8.6
25.0
10.6
9.6
1kΩ
68.6
8.5
24.1
10.5
9.6
RF = 1400MHz, Low Side LO, IF = 190MHz, VCC = VCCIF = 3.3V
R1
ICCIF
(mA)
GC
(dB)
IIP3
(dBm)
P1dB
(dBm)
NF
(dB)
Open
95.5
8.4
27.3
11
9.7
4.7kΩ
86.4
8.5
26.8
10.9
9.6
2.2kΩ
78.2
8.5
26.2
10.9
9.6
1kΩ
68.5
8.4
25.1
10.8
9.6
When ISEL is set low (<0.3V), both channels operate at
nominal DC current. When ISEL is set high (>2.5V), the DC
current in both channels is reduced, thus reducing power
consumption. The performance in low power mode and
normal power mode are compared in Table 6.
LTC5590
VCCA
19
ISEL
18
500Ω
BIAS A
VCCB
BIAS B
5590 F13
Figure 12. ISEL Interface Schematic
Table 6. Performance Comparison Between Different Power Modes
RF = 900MHz, High Side LO, IF = 190MHz, VCC = VCCIF = 3.3V
ISEL
ICCIF
(mA)
GC
(dB)
IIP3
(dBm)
P1dB
(dBm)
NF
(dB)
Low
376
8.7
26.0
10.7
9.7
High
239
7.7
21.5
10.4
9.9
Enable Interface
Figure 13 shows a simplified schematic of the ENA pin
interface (ENB is identical). To enable channel A, the ENA
voltage must be greater than 2.5V. If the enable function
is not required, the enable pin can be connected directly
to VCC. The voltage at the enable pin should never exceed
the power supply voltage (VCC) by more than 0.3V. If this
LTC5590
VCCA
19
ENA
17
ESD
CLAMP
500Ω
Low Current Mode
Both mixer channels can be set to low current mode using the ISEL pin. This allows flexibility to select a reduced
current mode of operation when lower RF performance is
acceptable, reducing power consumption by 36%. Figure
12 shows a simplified schematic of the ISEL pin interface.
5590 F13
Figure 13. ISEL Interface Schematic
5590p
17
LTC5590
Applications Information
should occur, the supply current could be sourced through
the ESD diode, potentially damaging the IC.
The Enable pins must be pulled high or low. If left floating, the on/off state of the IC will be indeterminate. If a
three-state condition can exist at the enable pins, then a
pull-up or pull-down resistor must be used.
Supply Voltage Ramping
Fast ramping of the supply voltage can cause a current
glitch in the internal ESD protection circuits. Depending on
the supply inductance, this could result in a supply volt-
age transient that exceeds the maximum rating. A supply
voltage ramp time of greater than 1ms is recommended.
Spurious Output Levels
Mixer spurious output levels versus harmonics of the RF
and LO are tabulated in Tables 7 and 8 for frequencies up
to 10GHz. The spur levels were measured on a standard
evalution board using the test circuit shown in Figure 1.
The spur frequencies can be calculated using the following equation:
fSPUR = (M • fRF) – (N • fLO)
Table 7. IF Output Spur Levels (dBc), High Side LO
(RF = 900MHz, PRF = –3dBm, PLO = 0dBm, VCC = VCCIF = 3.3V, TC = 25°C)
0
1
2
3
4
M
5
6
7
8
9
10
*Less than –100dBc
0
–31.8
–68.6
*
*
*
*
*
*
*
*
1
–40.0
0
–63.0
*
*
*
*
*
*
*
*
2
–42
–49.0
–78.6
*
*
*
*
*
*
*
*
3
–54.8
–47.4
–73.9
–81.5
–78.0
*
*
*
*
*
*
N
4
–55.7
–72.2
–87.7
*
*
*
*
*
*
*
*
5
–66.5
–64.0
–87.8
*
*
*
*
*
*
*
*
6
–81.37
–88.5
82.3
*
*
*
*
*
*
*
*
7
–73.07
–70.3
*
*
*
*
*
*
*
*
*
8
–74.33
–81.6*
*
*
*
*
*
*
*
*
*
9
–72.53
–81.2*
*
*
*
*
*
*
*
*
*
10
5
–71.3
–67.5
–86.4
*
*
*
*
*
*
–95.59
–94.52
6
–67.39
–78.3
–83.2
*
*
*
*
*
*
*
*
7
–85.33
–73.42
*
*
*
*
*
*
*
*
*
8
–69.93
*
–93.16
*
*
*
*
*
*
*
*
9
10
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
Table 8. IF Output Spur Levels (dBc), Low Side LO
(RF = 1400MHz, PRF = –3dBm, PLO = 0dBm, VCC = VCCIF = 3.3V, TC = 25°C)
0
1
2
3
4
M
5
6
7
8
9
10
*Less than –100dBc
0
–40.8
–77.5
*
*
*
*
*
1
–46.2
0
–74.4
–88.74
*
*
*
*
*
2
–42.2
–44.5
–69.3
*
*
*
*
*
*
3
–55.9
–52.2
–71.7
–76.8
*
*
*
*
–93.69
*
N
4
–56.9
–75.0
*
–89.21
*
*
*
*
*
*
*
5590p
18
LTC5590
Package Description
UH Package
UH Package
24-Lead Plastic
QFN (5mm × 5mm)
24-Lead LTC
Plastic
(5mm × 5mm)
(Reference
DWGQFN
# 05-08-1747
Rev A)
(Reference LTC DWG # 05-08-1747 Rev A)
0.75 ±0.05
5.40 ±0.05
3.90 ±0.05
3.20 ± 0.05
3.25 REF
3.20 ± 0.05
PACKAGE OUTLINE
0.30 ± 0.05
0.65 BSC
RECOMMENDED SOLDER PAD LAYOUT
APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED
5.00 ± 0.10
R = 0.05
TYP
0.75 ± 0.05
0.00 – 0.05
BOTTOM VIEW—EXPOSED PAD
R = 0.150
TYP
23
PIN 1 NOTCH
R = 0.30 TYP
OR 0.35 × 45°
CHAMFER
24
0.55 ± 0.10
PIN 1
TOP MARK
(NOTE 6)
1
2
5.00 ± 0.10
3.25 REF
3.20 ± 0.10
3.20 ± 0.10
(UH24) QFN 0708 REV A
0.200 REF
NOTE:
1. DRAWING IS NOT A JEDEC PACKAGE OUTLINE
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.20mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
0.30 ± 0.05
0.65 BSC
5590p
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
19
LTC5590
Typical Application
Downconverting Mixer with Lowpass IF Matching
T1A
4:1
22pF
1µF
100pF
RFA
50Ω
15
VCC
3.3V
188mA
82nH
1k
22pF
24
23
22
21
GND IFGNDA IFA+
20
1µF
19
IFA– IFBA VCCA
1 RFA
ISEL
ISEL 18
TO
CHANNEL B
(94mA)
14
ENA
ENA 17
LTC5590
CHANNEL A
10pF
3 GND
LO 16
4 GND
GND 15
CHANNEL B NOT SHOWN
24
13
23
12
22
21
11
10
NF
9
20
19
GC
8
7
700
2 CTA
25
IIP3
TC = 25°C
IF = 140MHz
800
IIP3 (dBm)
TO
CHANNEL B
(96mA)
82nH
26
16
IFA
50Ω
GAIN (dB), SSB NF (dB)
VCCIF
3.3V TO 5V
191mA
Conversion Gain, NF and IIP3
vs RF Frequency
18
1100
900
1000
RF FREQUENCY (MHz)
17
1200
5590 TA02b
LO
50Ω
5590 TA02
Related Parts
PART
NUMBER
DESCRIPTION
Infrastructure
LT5527
400MHz to 3.7GHz, 5V Downconverting Mixer
LT5557
400MHz to 3.8GHz, 3.3V Downconverting Mixer
LTC6416
2GHz 16-Bit ADC Buffer
LTC6412
31dB Linear Analog VGA
LTC554X
600MHz to 4GHz Downconverting Mixer Family
LT5554
Ultralow Distort IF Digital VGA
LT5578
400MHz to 2.7GHz Upconverting Mixer
LT5579
1.5GHz to 3.8GHz Upconverting Mixer
RF Power Detectors
LTC5581
6GHz Low Power RMS Detector
LTC5582
10GHz RMS Power Detector
LTC5583
Dual 6GHz RMS Power Detector Measures VSWR
ADCs
LTC2285
LTC2185
LTC2242-12
14-Bit, 125Msps Dual ADC
16-Bit, 125Msps Dual ADC Ultralow Power
12-Bit, 250Msps ADC
COMMENTS
2.3dB Gain, 23.5dBm IIP3 and 12.5dB NF at 1900MHz, 5V/78mA Supply
2.9dB Gain, 24.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/82mA Supply
40.25dBm OIP3 to 300MHz, Programmable Fast Recovery Output Clamping
35dBm OIP3 at 240MHz, Continuous Gain Range –14dB to 17dB
8dB Gain, >25dBm IIP3, 10dB NF, 3.3V/200mA Supply
48dBm OIP3 at 200MHz, 2dB to 18dB Gain Range, 0.125dB Gain Steps
27dBm OIP3 at 900MHz, 24.2dBm at 1.95GHz, Integrated RF Transformer
27.3dBm OIP3 at 2.14GHz, NF = 9.9dB, 3.3V Supply, Single-Ended LO and RF Ports
40dB Dynamic Range, ±1dB Accuracy Overtemperature, 1.5mA Supply Current
40MHz to 10GHz, Up to 57dB Dynamic Range, ±0.5dB Accuracy Overtemperature
40MHz to 6GHz, Up to 60dB Dynamic Range, >40dB Channel-to-Channel Isolation,
Difference Output for vs WR Measurement
72.4dB SNR, >88dB SFDR, 790mW Power Consumption
74.8dB SNR, 185mW/Channel Power Consumption
65.4dB SNR, 78dB SFDR, 740mW Power Consumption
5590p
20 Linear Technology Corporation
LT 0311 • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
 LINEAR TECHNOLOGY CORPORATION 2011