LTC4009 LTC4009-1/LTC4009-2 High Efficiency, Multi-Chemistry Battery Charger DESCRIPTION FEATURES n n n n n n n n n n n n General Purpose Battery Charger Controller Efficient 550kHz Synchronous Buck PWM Topology ±0.5% Output Float Voltage Accuracy Programmable Charge Current: 4% Accuracy Programmable AC Adapter Current Limit: 3% Accuracy No Audible Noise with Ceramic Capacitors Wide Input Voltage Range: 6V to 28V Wide Output Voltage Range: 2V to 28V Indicator Outputs for AC Adapter Present, Charging, C/10 Current Detection and Input Current Limiting Analog Charge Current Monitor Micropower Shutdown Thermally Enhanced 20-Pin 4mm × 4mm × 0.75mm QFN Package APPLICATIONS n n n Notebook Computers Portable Instruments Battery Backup Systems The LTC4009 is a constant-current/constant-voltage battery charger controller. It uses a synchronous quasi-constant frequency PWM control architecture that will not generate audible noise with ceramic bulk capacitors. Charge current is set by the combination of external sense, input and programming resistors. With no built-in termination, the LTC4009 family charges a wide range of batteries under external control. The LTC4009 features a fully adjustable output voltage, while the LTC4009-1 and LTC4009-2 can be pin-programmed for lithium-ion/polymer battery packs of 1-, 2-, 3- or 4-series cells. The LTC4009-1 provides output voltage of 4.1V/cell, and the LTC4009-2 is a 4.2V/cell version. The device includes AC adapter input current limiting which maximizes the charge rate for a fixed input power level. An external sense resistor programs the input current limit, and the ICL status pin indicates when the battery charge current is being reduced as a result of AC adapter current limiting. The CHRG status pin is active during all charging modes, including special indication for low charge current. L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. Protected by U.S. Patents including 5723970. TYPICAL APPLICATION 33mΩ 0.1μF DCIN 14.3k 1.5k 0.1μF CLP ICL Efficiency at DCIN = 20V 100 0.1μF SW INTVDD 95 2μF 6.8μH BGATE SHDN GND ITH CSP 3.01k 6.04k 33mΩ CSN 90 POWER LOSS 85 1000 VFLOAT = 12.3V RSENSE = 33mΩ RIN = 3.01k RPROG = 26.7k DIN = SSB44 L = IHLP-2525CZ 6.8μH 80 75 70 BAT PROG 4.7nF EFFICIENCY 3.01k 0.1μF CHARGE CURRENT MONITOR 10000 20μF FBDIV 301k 26.7k VFB + 12.3V Li-Ion BATTERY 0 0.5 1.0 1.5 2.0 CHARGE CURRENT (A) 2.5 POWER LOSS (mW) ACP POWER TO SYSTEM 5.1k CLN DCDIV BOOST LTC4009 TGATE CHRG TO/FROM MCU 20μF EFFICIENCY (%) FROM ADAPTER 13V TO 20V 100 3.0 4009 TA01b 4009 TA01a 32.8k 4009fb 1 LTC4009 LTC4009-1/LTC4009-2 ABSOLUTE MAXIMUM RATINGS (Note 1) DCIN, CLP, CLN or SW to GND ................... –0.3V to 30V CLP to CLN ............................................................±0.3V CSP, CSN or BAT to GND ............................ –0.3V to 28V CSP to CSN ............................................................±0.3V BOOST to GND ........................................... –0.3V to 36V BOOST to SW............................................... –0.3V to 7V DCDIV, SHDN, FVS0, FVS1 or VFB to GND .... –0.3V to 7V ACP, CHRG or ICL to GND ......................... –0.3V to 30V Operating Temperature Range (Note 2)........ 0°C to 85°C Junction Temperature (Note 3) ............................. 125°C Storage Temperature Range................... –65°C to 150°C PIN CONFIGURATION LTC4009-1 LTC4009-2 20 19 18 17 16 15 CSP CLN 1 CLP 2 14 CSN CLP 2 BGATE 15 CSP 14 CSN DCIN 3 13 PROG 21 INTVDD 20 19 18 17 16 CLN 1 DCIN 3 SW TOP VIEW TGATE BGATE INTVDD SW TGATE BOOST TOP VIEW BOOST LTC4009 13 PROG 21 11 BAT 6 7 8 9 10 FVS1 9 10 FVS0 8 VFB 7 FBDIV 6 CHRG DCDIV 5 ACP 11 BAT SHDN 12 ITH DCDIV 5 CHRG ICL 4 ACP 12 ITH SHDN ICL 4 UF PACKAGE 20-LEAD (4mm s 4mm) PLASTIC QFN UF PACKAGE 20-LEAD (4mm s 4mm) PLASTIC QFN TJMAX = 125°C, θJA = 37°C/W EXPOSED PAD (PIN 21) IS GND, MUST BE SOLDERED TO PCB TJMAX = 125°C, θJA = 37°C/W EXPOSED PAD (PIN 21) IS GND, MUST BE SOLDERED TO PCB ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE LTC4009CUF#PBF LTC4009CUF#TRPBF 4009 20-Lead (4mm × 4mm) Plastic QFN 0°C to 85°C LTC4009CUF-1#PBF LTC4009CUF-1#TRPBF 40091 20-Lead (4mm × 4mm) Plastic QFN 0°C to 85°C LTC4009CUF-2#PBF LTC4009CUF-2#TRPBF 40092 20-Lead (4mm × 4mm) Plastic QFN 0°C to 85°C Consult LTC Marketing for parts specified with wider operating temperature ranges. Consult LTC Marketing for information on non-standard lead based finish parts. For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/ 4009fb 2 LTC4009 LTC4009-1/LTC4009-2 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. DCIN = 20V, BAT = 12V, GND = 0V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Charge Voltage Regulation VTOL VBAT Accuracy (See Test Circuits) LTC4009 LTC4009-1/LTC4009-2 l –0.5 –0.8 0.5 0.8 % % l –0.6 –0.8 0.6 0.8 % % IVFB VFB Input Bias Current VFB = 1.2V RON FBDIV On-Resistance ILOAD = 100μA l ±20 ILEAK-FBDIV FBDIV Output Leakage Current SHDN = 0V, FBDIV = 0V l VBOV VFB Overvoltage Threshold LTC4009 BAT Overvoltage Threshold LTC4009-1/LTC4009-2, Relative to Selected Output Voltage nA 85 190 Ω –1 0 1 μA l 1.235 1.281 1.32 V l 103 106 109 % l –4 –5 4 5 % % Charge Current Regulation ITOL Charge Current Accuracy with RIN = 3.01k, 5V < BAT < 18V RPROG = 26.7k VSENSE = 0mV, PROG = 1.2V –12.75 –11.67 –10.95 μA VSENSE Step from 0mV to 5mV, PROG = 1.2V –1.78 –1.66 –1.54 μA 140 185 325 235 430 mV mV AI Current Sense Amplifier Gain (PROG ΔI) with RIN = 3.01k, 5V < BAT < 18V VCS-MAX Maximum Peak Current Sense Threshold Voltage ITH = 2V per Cycle (RIN = 3.01k) ITH = 5V VC10 C/10 Indicator Threshold Voltage PROG Falling 340 400 460 mV VREV Reverse Current Threshold Voltage PROG Falling 180 253 295 mV 97 96 100 100 103 104 mV mV l l Input Current Regulation VCL Current Limit Threshold CLP – CLN ICLN CLN Input Bias Current CLN = CLP VICL ICL Indicator Threshold (CLP – CLN) – VCL –8 DCIN and CLP 6 l ±100 –5 nA –2 mV 28 V DCIN, CLP Supplies OVR Operating Voltage Range IDCO DCIN Operating Current No Gate Loads 1.5 2 mA ICLPO CLP Operating Current CLP = 20V, No Gate Loads 0.5 0.8 mA VCBT CLP Boost Threshold Voltage CLP – DCIN, CLP Rising l 10 25 60 mV VCNT CLP Normal Threshold Voltage (Note 5) DCIN – CLP, CLP Falling l 10 25 60 mV VOVP DCDIV Overvoltage Protection Threshold DCDIV Rising 1.75 1.825 1.9 V VOVP(HYST) DCDIV OVP Threshold Hysteresis 110 mV Shutdown DCDIV Rising l VACP DCDIV AC Present Threshold Voltage VACP(HYST) DCDIV ACP Threshold Hysteresis Voltage IDCDIV DCDIV Input Current VIL SHDN Input Voltage Low l VIH SHDN Input Voltage High l RIN SHDN Pull-Down Resistance IDCS DCIN Shutdown Current SHDN = 0V ICLPS CLP Shutdown Current CLP = 12V, SHDN = 0V or DCDIV = 0V 1.145 1.2 1.255 50 DCDIV = 1.2V –1 0 1 μA 300 mV 1.4 V 50 kΩ 215 l V mV 9 μA 18 μA 4009fb 3 LTC4009 LTC4009-1/LTC4009-2 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. DCIN = 20V, BAT = 12V, GND = 0V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX ILEAK-BAT BAT Leakage Current SHDN = 0V or DCDIV = 0V, 0V ≤ CSP = CSN = BAT ≤ 20V l –1 0 1 UNITS μA ILEAK-CSN CSN Leakage Current SHDN = 0V or DCDIV = 0V, 0V ≤ CSP = CSN = BAT ≤ 20V l –1 0 1 μA ILEAK-CSP CSP Leakage Current SHDN = 0V or DCDIV = 0V, 0V ≤ CSP = CSN = BAT ≤ 20V l –1 0 1 μA ILEAK-SW SW Leakage Current SHDN = 0V or DCDIV = 0V, 0V ≤ SW ≤ 20V l –1 0 2 μA l 4.85 INTVDD Regulator INTVDD Output Voltage No Load ΔVDD Load Regulation IDD = 20mA IDD Short-Circuit Current (Note 6) INTVDD = 0V 5 5.15 V –0.4 –1 % 50 85 120 mA 65 100 135 mV 633 kHz Switching Regulator VCE Charge Enable Threshold Voltage CLP – BAT, CLP Rising IITH ITH Current ITH = 1.4V fTYP Typical Switching Frequency fMIN Minimum Switching Frequency DCMAX tR-TG tF-TG tR-BG l –40/+90 μA 467 550 CLOAD = 3.3nF 20 25 Maximum Duty Cycle CLOAD = 3.3nF 98 99 TGATE Rise Time CLOAD = 3.3nF, 10% – 90% 60 110 ns TGATE Fall Time CLOAD = 3.3nF, 90% – 10% 50 90 ns BGATE Rise Time CLOAD = 3.3nF, 10% – 90% 60 90 ns tF-BG BGATE Fall Time CLOAD = 3.3nF, 90% – 10% 60 110 ns tNO TGATE, BGATE Non-Overlap Time CLOAD = 3.3nF, 10% – 10% 110 kHz % ns Float Voltage Select Inputs (LTC4009-1/LTC4009-2 Only) VIL Input Voltage Low VIH Input Voltage High IIN Input Current 0.5 V 10 μA 500 mV 10 μA 38 μA 3.5 0V ≤ VIN ≤ 5V V –10 Indicator Outputs VOL Output Voltage Low ILOAD = 100μA, PROG = 1.2V ILEAK Output Leakage SHDN = 0V, DCDIV = 0V, VOUT = 20V l –10 IC10 CHRG C/10 Current Sink CHRG = 2.5V l 15 Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC4009 is guaranteed to meet performance specifications over the 0°C to 85°C operating temperature range. Note 3: Operating junction temperature TJ (in °C) is calculated from the ambient temperature TA and the total continuous package power dissipation PD (in watts) by the formula TJ = TA + (θJA • PD). Refer to the Applications Information section for details. 25 Note 4: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to GND, unless otherwise specified. Note 5: This threshold is guaranteed to be satisfied if CLP = DCIN when the LTC4009 exits shutdown. Note 6: Output current may be limited by internal power dissipation. Refer to the Applications Information section for details. 4009fb 4 LTC4009 LTC4009-1/LTC4009-2 TEST CIRCUITS LTC4009 1.2085V PROG 13 LTC4009-1 LTC4009-2 FROM ICL (CLP = CLN) – – – + FROM ICL (CLP = CLN) – – – + EA 1.2085V PROG ITH VFB 10 BAT 13 12 ITH 11 12 TARGET VARIES WITH FVS0,1 + 1.2085V TARGET EA + LTC1055 LTC1055 – – 0.6V 0.6V 4009 TC02 4009 TC01 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C unless otherwise noted. DIN = SSB44, L = IHLP-2525 6.8μH) Efficiency at DCIN = 20V, BAT = 8V 10000 RSENSE = 33mΩ RIN = 3.01k EFFICIENCY (%) 90 1000 EFFICIENCY 95 85 10000 RSENSE = 33mΩ RIN = 3.01k POWER LOSS EFFICIENCY 90 1000 85 80 0 0.5 1.0 1.5 2.0 CHARGE CURRENT (A) 2.5 100 3.0 80 0 0.5 1.0 1.5 2.0 CHARGE CURRENT (A) 4009 G01 LTC4009 TEST CIRCUIT 1000 85 250 0.04 225 0.02 0 –0.02 0 0.5 1.0 1.5 2.0 CHARGE CURRENT (A) 2.5 4009 G03 –0.10 175 125 100 –0.08 100 3.0 200 150 –0.04 –0.06 80 CLP = BAT + 3V (CLP ≥ 6V) 275 RON (Ω) POWER LOSS 90 VFB ERROR (%) EFFICIENCY (%) FBDIV RON vs BAT 0.06 EFFICIENCY 100 3.0 300 0.08 POWER LOSS (mW) 95 0.10 10000 RSENSE = 33mΩ RIN = 3.01k 2.5 4009 G02 VFB Line Regulation Efficiency at DCIN = 20V, BAT = 16V 100 POWER LOSS (mW) POWER LOSS POWER LOSS (mW) 95 100 EFFICIENCY (%) 100 Efficiency at DCIN = 20V, BAT = 12V 5 10 20 15 CLP (V) 25 30 4009 G04 75 0 5 15 10 BAT (V) 20 25 4009 G05 4009fb 5 LTC4009 LTC4009-1/LTC4009-2 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C unless otherwise noted. DIN = SSB44, L = IHLP-2525 6.8μH) Charge Current Accuracy 2A 1A 12.1V 1A 3A RECONNECT LOAD STATE DISCONNECT 4009 G06 CLP = 20V TIME (1ms/DIV) VFLOAT = 12.3V CHARGE CURRENT ERROR (%) BATTERY VOLTAGE (500mV/DIV) 5 Charge Current Line Regulation 0.5 RSENSE = 33mΩ RIN = 3.01k 4 DCIN = 24V RPROG = 35.7k 3 2 1 0 DCIN = 12V RPROG = 26.7k –1 –2 BAT = 6V RSENSE = 33mΩ RIN = 3.01k 0.4 CHARGE CURRENT ERROR (%) Battery Load Dump 0.3 ICHG = 1A 0.2 0.1 ICHG = 2A 0 –0.1 ICHG = 3A –0.2 –0.3 –0.4 –0.5 0 2 4 6 15 DCIN (V) 10 5 8 10 12 14 16 18 20 22 24 BAT (V) Input Current Limit ICHG = 3A 3.0 2.5 ICHG 2A/DIV IIN 2.0 2.5 ICHG = 2A 2.0 CURRENT (A) CHARGE CURRENT (A) PWM Soft-Start 3.0 3.5 1.5 ICHG = 1A 1.0 ITH 1V/DIV ICHG 1.5 1.0 0.5 PROG 1V/DIV 2.5A BULK CHARGE 2.1A INPUT CURRENT LIMIT SHDN 5V/DIV 0 0.5 0 25 4009 G07 4009 G15 Charge Current Load Regulation 20 DCIN = 20V RSENSE = 33mΩ RIN = 3.01k –0.5 11.0 11.4 –0.5 –1.0 11.8 12.2 BAT (V) 12.6 13.0 TIME (500μs/DIV) ICL STATE 0 0.5 1.0 1.5 SYSTEM LOAD (A) 2.0 2.5 4009 G09 4009 G08 Gate Drive Non-Overlap PWM Frequency vs Duty Cycle ICHG = 750mA 500 BGATE PWM FREQUENCY (kHz) EXTERNAL FET DRIVE (1V/DIV) 600 TGATE TIME (80ns/DIV) 4009 G10 4009 G11 400 300 200 CLP = 6V CLP = 12V CLP = 20V CLP = 25V 100 0 0 20 40 60 DUTY CYCLE (%) 80 100 4009 G12 4009fb 6 LTC4009 LTC4009-1/LTC4009-2 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C unless otherwise noted. DIN = SSB44, L = IHLP-2525 6.8μH) PWM Frequency vs Charge Current Battery Shutdown Current 25 600 PWM FREQUENCY (kHz) BATTERY CURRENT (μA) BAT = 5V 500 BAT = 12V 400 CLP = 15V RSENSE = 33mΩ RIN = 3.01k 300 200 0 15 LTC4009 ALL PINS 10 0 0 0.5 1.0 1.5 2.0 CHARGE CURRENT (A) DC1104 WITH SSB44 INPUT DIODE 5 BAT = 14.5V 100 20 2.5 3.0 4009 G13 0 5 15 20 10 BATTERY VOLTAGE (V) 25 4009 G14 PIN FUNCTIONS CLN (Pin 1): Adapter Input Current Limit Negative Input. The LTC4009 senses voltage on this pin to determine if the charge current should be reduced to limit total input current. The threshold is set 100mV below the CLP pin. An external filter should be used to remove switching noise. This input should be tied to CLP if not used. Operating voltage range is (CLP – 110mV) to CLP. condition exists. An external resistor divider programs these threshold levels relative to DCIN. Operating voltage range is GND to INTVDD. CLP (Pin 2): Adapter Input Current Limit Positive Input. The LTC4009 also draws power from this pin, including a small amount for some shutdown functions. Operating voltage range is GND to 28V. ACP (Pin 7): Active-Low AC Adapter Present Indicator Output. This open-drain output pulls to GND when adequate AC adapter (DC) voltage is present, based on the DCDIV input. This output should be left floating if not used. DCIN (Pin 3): DC Power Input. The LTC4009 draws power from this pin when an external DC power source is present. This pin is typically isolated from the CLP pin by a diode and should be bypassed with a capacitance of 0.1μF or more. Operating voltage range is GND to 28V. CHRG (Pin 8): Active-Low Charge Indicator Output. This open-drain output provides three levels of information about charge status using a strong pull-down, 25μA weak pull-down or high impedance. Refer to the Operation and Applications Information sections for further details. This output should be left floating if not used. ICL (Pin 4): Active-Low Input Current Limit Indicator Output. This open-drain output pulls to GND when the charge current is reduced because of AC adapter input current limiting. This output should be left floating if not used. DCDIV (Pin 5): AC Adapter Present Comparator Input. The LTC4009 senses voltage on this pin to determine when an adequate DC power source is present, or if an overvoltage SHDN (Pin 6): Active-low Shutdown Input. Driving SHDN below 300mV unconditionally forces the LTC4009 into the shutdown state. This input has a 50kΩ internal pulldown to GND. Operating voltage range is GND to INTVDD. FBDIV (Pin 9, LTC4009): Battery Voltage Feedback Resistor Divider Source. The LTC4009 connects this pin to BAT when charging is in progress. FBDIV is an open-drain PFET output to BAT with an operating voltage range of GND to BAT. 4009fb 7 LTC4009 LTC4009-1/LTC4009-2 PIN FUNCTIONS FVS0 (Pin 9, LTC4009-1/LTC4009-2): Battery Voltage Select Input (LSB). This pin is one of two pins used on the LTC4009-1 or LTC4009-2 to select one of four preset battery voltages. Selection is done by connecting to either GND or INTVDD. Operating voltage range is GND to INTVDD. CSP (Pin 15): Charge Current Sense Positive Input. Place an external input resistor (RIN, Figure 1) between this pin and the positive side of the charge current sense resistor. Operating voltage ranges from (BAT – 50mV) to (BAT + 200mV). VFB (Pin 10, LTC4009): Battery Voltage Feedback Input. An external resistor divider between FBDIV and GND with the center tap connected to VFB programs the charger output voltage. In constant voltage mode, this pin is nominally at 1.2085V. Refer to the Applications Information section for complete details on programming battery float voltage. Operating voltage range is GND to 1.25V. BGATE (Pin 16): External Synchronous NFET Gate Control Output. This output provides gate drive to an external NMOS power transistor switch used for synchronous rectification to increase efficiency in the step-down DC/DC converter. Operating voltage is GND to INTVDD. BGATE should be left floating if not used. FVS1 (Pin 10, LTC4009-1/LTC4009-2): Battery Voltage Select Input (MSB). This pin is one of two pins used on the LTC4009-1 or LTC4009-2 to select one of four preset battery voltages. Selection is done by connecting to either GND or INTVDD. Operating voltage range is GND to INTVDD. BAT (Pin 11): Battery Pack Connection. The LTC4009 uses the voltage on this pin to control PWM operation when charging. Operating voltage range is GND to CLN. ITH (Pin 12): PWM Control Voltage and Compensation Node. The LTC4009 develops a voltage on this pin to control cycle-by-cycle peak inductor current. An external R-C network connected to ITH provides PWM loop compensation. Refer to the Applications Information section for further details on establishing loop stability. Operating voltage range is GND to INTVDD. PROG (Pin 13): Charge Current Programming and Monitoring Pin. An external resistance connected between PROG and GND, along with the current sense and PWM input resistors, programs the maximum charge current. The voltage on this pin can also provide a linearized indicator of charge current. Refer to the Applications Information section for complete details on current programming and monitoring. Operating voltage range is GND to INTVDD. CSN (Pin 14): Charge Current Sense Negative Input. Place an external input resistor (RIN, Figure 1) between this pin and the negative side of the charge current sense resistor. Operating voltage ranges from (BAT – 50mV) to (BAT + 200mV). INTVDD (Pin 17): Internal 5V Regulator Output. This pin provides a means of bypassing the internal 5V regulator used to power the LTC4009 PWM FET drivers. This supply shuts down when the LTC4009 shuts down. Refer to the Application Information section for details if additional power is drawn from this pin by the application circuit. SW (Pin 18): PWM Switch Node. The LTC4009 uses the voltage on this pin as the source reference for its topside NFET (PWM switch) driver. Refer to the Applications Information section for additional PCB layout suggestions related to this critical circuit node. Operating voltage range is GND to CLN. TGATE (Pin 19): External NFET Switch Gate Control Output. This output provides gate drive to an external NMOS power transistor switch used in the DC/DC converter. Operating voltage range is GND to (CLN + 5V). BOOST (Pin 20): TGATE Driver Supply Input. A bootstrap capacitor is returned to this pin from a charge network connected to SW and INTVDD. Refer to the Applications Information section for complete details on circuit topology and component values. Operating voltage ranges from (INTVDD – 1V) to (CLN + 5V). Exposed Pad (Pin 21): Ground. The package paddle provides a single-point ground for the internal voltage reference and other critical LTC4009 circuits. It must be soldered to a suitable PCB copper ground pad for proper electrical operation and to obtain the specified package thermal resistance. 4009fb 8 LTC4009 LTC4009-1/LTC4009-2 BLOCK DIAGRAM 3 2 1 4 8 10 (LTC4009) DCIN BOOST AND OV DETECTION CLP INPUT CURRENT LIMIT CLN ICL CHRG C/10 DETECTION VFB + CSP – CSN 15 CA + – EA + – – – CC TO INTERNAL CIRCUITS PROG BOOST BAT OSCILLATOR TGATE PWM LOGIC CHARGE OVERVOLTAGE 9 FBDIV TO INTERNAL CIRCIUTS 5V REGULATOR SW INTVDD BGATE GND 5 7 6 DCDIV ACP SHUTDOWN CONTROL SHUTDOWN TO INTERNAL CIRCUITS 13 1.2085V REFERENCE ITH 11 14 R1 12 20 19 18 17 16 21 4009 BD01 SHDN 4009fb 9 LTC4009 LTC4009-1/LTC4009-2 BLOCK DIAGRAM 2 1 4 8 10 9 11 DCIN BOOST AND OV DETECTION CLP INPUT CURRENT LIMIT CLN ICL CHRG C/10 DETECTION VFB FVS1 FVS0 BAT + CSP – CSN OUTPUT VOLTAGE SELECT + CC – EA TO INTERNAL CIRCUITS PROG OSCILLATOR TGATE OVERVOLTAGE PWM LOGIC TO INTERNAL CIRCIUTS 5V REGULATOR SW INTVDD BGATE GND 5 7 6 ACP SHUTDOWN CONTROL SHUTDOWN TO INTERNAL CIRCUITS 13 1.2085V REFERENCE BOOST CHARGE 14 R1 ITH DCDIV 15 CA + – – – 3 (LTC4009-1/LTC4009-2) 12 20 19 18 17 16 21 4009 BD02 SHDN 4009fb 10 LTC4009 LTC4009-1/LTC4009-2 OPERATION Overview The LTC4009 is a synchronous step-down (buck) current mode PWM battery charger controller. The maximum charge current is programmed by the combination of a charge current sense resistor (RSENSE), matched input resistors (RIN, Figure 1), and a programming resistor (RPROG) between the PROG and GND pins. Battery voltage is programmed either with an external resistor divider between FBDIV and GND (LTC4009) or two digital battery voltage select pins (LTC4009-1/LTC4009-2). In addition, the PROG pin provides a linearized voltage output of the actual charge current. The LTC4009 family does not have any built-in charge termination and is flexible enough for charging any type of battery chemistry. These are building block ICs intended for use with an external circuit, such as a microcontroller, capable of managing the entire algorithm required for the specific battery being charged. Each member of the LTC4009 family features a shutdown input and various state indicator outputs, allowing easy and direct management by a wide range of external (digital) charge controllers. Due to the popularity of rechargeable lithium-ion chemistries, the LTC4009-1 and LTC4009-2 also offer internal precision resistors that can be digitally selected to produce one of four preset output voltages for simplified design of those charger types. Shutdown The LTC4009 remains in shutdown until DCDIV exceeds 1.2V, and SHDN is driven above 1.4V. In shutdown, current drain from the battery is reduced to the lowest possible level, thereby increasing standby time. When in shutdown, the ITH pin is pulled to GND and the CHRG, ICL, FET gate drivers and INTVDD output are all disabled. The ACP status output indicates sensed adapter input voltage during all LTC4009 states. Charging can be stopped at any time by forcing SHDN below 300mV. Soft-Start CLP exceeds BAT by 100mV and ITH exceeds a threshold that assures initial current will be positive (about 5% to 25% of the maximum programmed current). To limit inrush current, soft-start delay is created with the compensation values used on the ITH pin. Longer soft-start times can be realized by increasing the filter capacitor on ITH, if reduced loop bandwidth is acceptable. The actual charge current at the end of soft-start will depend on which loop (current, voltage or adapter limit) is in control of the PWM. If this current is below that required by the ITH start-up threshold, the resulting charge current transient duration depends on loop compensation but is typically less than 100μs. Bulk Charge When soft-start is complete, the LTC4009 begins sourcing the current programmed by the external components connected to CSP, CSN and PROG. Some batteries may require a small conditioning trickle current if they are heavily discharged. As shown in the Applications Information section, the LTC4009 can address this need through a variety of low current circuit techniques on the PROG pin. Once a suitable cell voltage has been reached, charge current can be switched to a higher, bulk charge value. End-of-Charge and CHRG Output As the battery approaches the programmed output voltage, charge current will begin to decrease. The opendrain CHRG output can indicate when the current drops to 10% of its programmed full-scale value by turning off the strong pull-down (open-drain FET) and turning on a weak 25μA pull-down current. This weak pull-down state is latched until the part enters shutdown or the sensed current rises to roughly C/6. C/10 indication will not be set if charge current has been reduced due to adapter input current limiting or DCIN/battery overvoltage. As the charge current approaches 0A, the PWM continues to operate in full continuous mode. This avoids generation of audible noise, allowing bulk ceramic capacitors to be used in the application. Exiting the shutdown state enables the charger and releases the ITH pin. When enabled, switching will not begin until 4009fb 11 LTC4009 LTC4009-1/LTC4009-2 OPERATION LTC4009 WATCHDOG TIMER SYSTEM POWER 2 11 CLP BAT CLOCK OSCILLATOR S TGATE Q RD 19 L1 PWM LOGIC BGATE + + CSP 16 RIN CA CC R1 – – CSN PROG FROM ICL VFB RSENSE RIN 14 VSENSE – ICHRG 13 RPROG + – – – EA + 15 CPROG + 10 1.2085V ITH 12 LOOP COMPENSATION 4009 F01 Figure 1. PWM Circuit Diagram Charge Current Monitoring When the LTC4009 is charging, the voltage on the PROG pin varies in direct proportion to the charge current. Referring to Figure 1, the nominal PROG voltage is given by VPROG = ICHRG • RSENSE • RPROG + 11.67μA • RPROG RIN Voltage tolerance on PROG is limited by the charge current accuracy specified in the Electrical Characteristics table. Refer to the Applications Information section on programming charge current for additional details. Adapter Input Current Limit The LTC4009 can monitor and limit current from the input DC supply, which is normally an AC adapter. When the programmed adapter input current is reached, charge current is reduced to maintain the desired maximum input current. The ITH and PROG pins will reflect the reduced charge current. This limit function avoids overloading the DC input source, allowing the product to operate at the same time the battery is charging without complex load management algorithms. The battery will automatically be charged at the maximum possible rate that the adapter will support, given the application’s operating condition. The LTC4009 can only limit input current by reducing charge current, and in this case the charger uses nonsynchronous PWM operation to prevent boosting if the average charge current falls below about 25% of the maximum programmed current. Note that the ICL indicator output becomes active (low) at an adapter input current level just slightly less than that required for the internal amplifier to begin to assert control over the PWM loop. If system load current equals or exceeds the input adapter current limit for more than a few milliseconds, the bootstrap capacitor between BOOST and SW can fully discharge due to normal pin leakage currents. In this case, the PWM will not restart until the system current has dropped to about 85% of the programmed input adapter limit value. Charger Status Indicator Outputs The LTC4009 open-drain indicator outputs provide valuable information about the IC’s operating state and can 4009fb 12 LTC4009 LTC4009-1/LTC4009-2 OPERATION be used for a variety of purposes in applications. Table 1 summarizes the state of the three indicator outputs as a function of LTC4009 operation. Table 1. LTC4009 Open-Drain Indicator Outputs ACP Off On CHRG Off Off ICL Off Off On On On 25μA Off Off On On On On 25μA On On Off On CHARGER STATE No DC Input (Shutdown) Shutdown, Reverse Current or DCIN Overvoltage Bulk Charge Low Current Charge or Initial CLP-BAT < 100mV Input Current Limit During Bulk Charge Input Current Limit During Low Current Charge Input Current Limit During DCIN Overvoltage PWM Controller The LTC4009 uses a synchronous step-down architecture to produce high operating efficiency. The nominal operating frequency of 550kHz allows use of small filter components. The following conceptual discussion of basic PWM operation references Figure 1. The voltage across the external charge current sense resistor RSENSE is measured by current amplifier CA. This instantaneous current (VSENSE/RIN) is fed to the PROG pin where it is averaged by an external capacitor and converted to a voltage by the programming resistor RPROG between PROG and GND. The PROG voltage becomes the average charge current input signal to error amplifier EA. EA also ON receives loop control information from the battery voltage feedback input VFB and the adapter input current limit circuit. The ITH output of the error amplifier is a scaled control voltage for one input of the PWM comparator CC. ITH sets a peak inductor current threshold, sensed by R1, to maintain the desired average current through RSENSE. The current comparator output does this by switching the state of the RS latch at the appropriate time. At the beginning of each oscillator cycle, the PWM clock sets the RS latch and turns on the external topside NFET (bottom-side synchronous NFET off) to refresh the current carried by the external inductor L1. The inductor current and voltage across RSENSE begin to rise linearly. CA buffers this instantaneous voltage rise and applies it to CC with gain supplied by R1. When the voltage across R1 exceeds the peak level set by the ITH output of EA, the top FET turns off and the bottom FET turns on. The inductor current then ramps down linearly until the next rising PWM clock edge. This closes the loop and sources the correct inductor current to maintain the desired parameter (charge current, battery voltage, or input current). To produce a near constant frequency, the PWM oscillator implements the equation: tOFF = CLP – BAT CLP • 550kHz Repetitive, closed-loop waveforms for stable PWM operation appear in Figure 2. tOFF TOP FET OFF ON BOTTOM FET OFF THRESHOLD SET BY ITH VOLTAGE INDUCTOR CURRENT 4009 F02 Figure 2. PWM Waveforms 4009fb 13 LTC4009 LTC4009-1/LTC4009-2 OPERATION PWM Watchdog Timer As input and output conditions vary, the LTC4009 may need to utilize PWM duty cycles approaching 100%. In this case, operating frequency may be reduced well below 550kHz. An internal watchdog timer observes the activity on the TGATE pin. If TGATE is on for more than 40μs, the watchdog activates and forces the bottom NFET on (top NFET off) for about 100ns. This avoids a potential source of audible noise when using ceramic input or output capacitors and prevents the boost supply capacitor for the top gate driver from discharging. In low drop out operation, the actual charge current may not be able to reach the programmed full-scale value due to the watchdog function. Overvoltage Protection The LTC4009 also contains overvoltage detection that prevents transient battery voltage overshoots of more than about 6% above the programmed output voltage. When battery overvoltage is detected, both external MOSFETs are turned off until the overvoltage condition clears, at which time a new soft start sequence begins. This is useful for properly charging battery packs that use an internal switch to disconnect themselves for performing functions such as calibration or pulse mode charging. Reverse Charge Current Protection (Anti-Boost) Because the LTC4009 always attempts to operate synchronously in full continuous mode (to avoid audible noise from ceramic capacitors), reverse average charge current can occur during some invalid operating conditions. To avoid boosting a lightly loaded system supply during reverse operation, the LTC4009 monitors the voltage on CLP to determine if it rises 25mV above DCIN during charge. However, under heavier system loads, CLP may not boost above DCIN, even though reverse average current is flowing. In this case a second circuit monitors indication of reverse average current on PROG. If the designer intends to replace the input diode with a MOSFET for improved efficiency, using the ACP signal of the LTC4009 to control the MOSFET is not recommended. In this case, the LTC4012 is strongly suggested, because it includes ideal diode control of the MOSFET, instead of driving it as a simple switch. This solution is the most effective at detecting boost conditions and quickly shutting down the IC. If for some reason the LTC4012 solution is not acceptable, and a MOSFET with external control is used to replace the input diode, and there are conditions involving very low reverse current under no system load with an AC adapter that cannot sink current, it may still be possible to boost the DCIN input supply. To cover this case, the LTC4009 monitors the resistor divider attached to the DCDIV pin and sets an input overvoltage fault if that voltage exceeds 1.825V. If any of these circuits detects boost operation, The LTC4009 turns off both external MOSFETs until the reverse current condition clears. Once DCIN-CLP > 25mV, a new soft-start sequence begins. 4009fb 14 LTC4009 LTC4009-1/LTC4009-2 APPLICATIONS INFORMATION Programming Charge Current The formula for charge current is: ICHRG = RIN RSENSE ⎛ 1.2085V ⎞ •⎜ – 11.67μA⎟ ⎝ RPROG ⎠ The LTC4009 operates best with 3.01k input resistors, although other resistors near this value can be used to accommodate standard sense resistor values. Refer to the subsequent discussion on inductor selection for other considerations that come into play when selecting input resistors RIN. RSENSE should be chosen according to the following equation: RSENSE = The resistance between PROG and GND can simply be set with a single a resistor, if only maximum charge current needs to be controlled during the desired charging algorithm. However, some batteries require a low charge current for initial conditioning when they are heavily discharged. The charge current can then be safely switched to a higher level after conditioning is complete. Figure 3 illustrates one method of doing this with 2-level control of the PROG pin resistance. Turning Q1 off reduces the charge current to IMAX/10 for battery conditioning. When Q1 is on, the LTC4009 is programmed to allow full IMAX current for bulk charge. This technique can be expanded through the use of additional digital control inputs for an arbitrary number of pre-programmed current values. 100mV IMAX where IMAX is the desired maximum charge current ICHRG. The 100mV target can be adjusted to some degree to obtain standard RSENSE values and/or a desired RPROG value, but target voltages lower than 100mV will cause a proportional reduction in current regulation accuracy. The required minimum resistance between PROG and GND can be determined by applying the suggested expression for RSENSE while solving the first equation given above for charge current with ICHRG = IMAX: 1.2085V • RIN RPROG(MIN) = 0.1V + 11.67μA • RIN If RIN is chosen to be 3.01k with a sense voltage of 100mV, this equation indicates a minimum value for RPROG of 26.9k. Table 6 gives some examples of recommended charge current programming component values based on these equations. LTC4009 PROG 13 BULK CHARGE PRECHARGE R1 26.7k Q1 2N7002 CPROG 4.7nF R2 53.6k 4009 F03 Figure 3. Programming 2-Level Charge Current For a truly continuous range of maximum charge current control, pulse width modulation can be used as shown in Figure 4. The value of RPROG controls the maximum value of charge current which can be programmed (Q1 continuously on). PWM of the Q1 gate voltage changes the value of RPROG to produce lower currents. The frequency of this modulation should be higher than a few kHz, and CPROG must be increased to reduce the ripple caused by switching Q1. In addition, it may be necessary to increase loop 4009fb 15 LTC4009 LTC4009-1/LTC4009-2 APPLICATIONS INFORMATION BAT 95Ω TYPICAL LTC4009 PROG FBDIV 13 11 9 R1 LTC4009 RPROG 5V 0V CZ + RMAX 511k VFB 10 CPROG R2A Q1 2N7002 R2B* GND (EXPOSED PAD) 21 4009 F04 4009 F05 *OPTIONAL TRIM RESISTOR Figure 4. Programming PWM Current Figure 5. Programming LTC4009 Output Voltage compensation capacitance connected to ITH to maintain stability or prevent large current overshoot during startup. Selecting a higher Q1 PWM frequency (≈10kHz) will reduce the need to change CPROG or other compensation values.Charge current will be proportional to the duty cycle of the PWM input on the gate of Q1. required. Actually, the temperature rise of the LTC4009 will rarely exceed 50°C at the end of charge, because charge current will have tapered to a low level. This means that 0.25% resistors will normally provide the required level of overall accuracy. Table 2 gives recommended values for R1 and R2 for popular lithium-ion battery voltages. For values of R1 above 200k, addition of capacitor CZ may improve transient response and loop stability. A value of 10pF is normally adequate. Programming LTC4009 Output Voltage Figure 5 shows the external circuit for programming the charger voltage when using the LTC4009. The voltage is then governed by the following equation: VBAT = 1.2085V • (R1+ R2) , R2 = R2A + R2B R2 See Table 2 for approximate resistor values for R2. ⎛ V ⎞ R1 = R2 ⎜ BAT – 1⎟ , R2 = R2A + R2B ⎝ 1.2085V ⎠ Selecting R2 to be less than 50k and the sum of R1 and R2 at least 200k or above, achieves the lowest possible error at the VFB sense input. Note that sources of error such as R1 and R2 tolerance, FBDIV RON or VFB input impedance are not included in the specifications given in the Electrical Characteristics. This leads to the possibility that very accurate (0.1%) external resistors might be Table 2. Programming LTC4009 Output Voltage VBAT VOLTAGE R1 (0.25%) R2A (0.25%) R2B (1%)* 4.1V 165k 69.0k – 4.2V 167k 67.3k 200 8.2V 162k 28.0k – 8.4V 169k 28.4k – 12.3V 301k 32.8k – 12.6V 294k 31.2k – 16.4V 284k 22.6k – 16.8V 271k 21.0k – 20.5V 316k 19.8k – 21.0V 298k 18.2k – 24.6V 298k 15.4k – 25.2V 397k 20.0k – *To obtain required accuracy requires series resistors for R2. 4009fb 16 LTC4009 LTC4009-1/LTC4009-2 APPLICATIONS INFORMATION Programming LTC4009-1/LTC4009-2 Output Voltage The LTC4009-1/LTC4009-2 feature precision internal battery voltage feedback resistor taps configured for common lithium-ion voltages. All that is required to program the desired voltage is proper pin programming of FVS0 and FVS1 as shown in Table 3. CDC 2 FVS1 FVS0 4.1V 4.2V GND GND 8.2V 8.4V GND INTVDD 12.3V 12.6V INTVDD GND 16.4V 16.8V INTVDD INTVDD Programming Input Current Limit To set the input current limit ILIM, the minimum wall adapter current rating must be known. To account for the tolerance of the LTC4009 input current sense circuit, 5% should be subtracted from the adapter’s minimum rated output. Refer to Figure 6 and program the input current limit function with the following equation. RCL = 100mV ILIM where ILIM is the desired maximum current draw from the DC (adapter) input, including adjustments for tolerance, if any. Often an AC adapter will include a rated current output margin of at least +10%. This can allow the adapter current limit value to simply be programmed to the actual minimum rated adapter output current. Table 4 shows some common RCL current limit programming values. A lowpass filter formed by RF (5.1k) and CF (0.1μF) is required to eliminate switching noise from the LTC4009 PWM and other system components. If input current limiting is not desired, CLN should be shorted to CLP while CLP remains connected to power. 1 CLN LTC4009 4009 F06 Figure 6. Programming Input Current Limit VBAT VOLTAGE LTC4009-2 TO REMAINDER OF SYSTEM RF 5.1k CF 0.1μF 10k CLP Table 3. LTC4009-1/LTC4009-2 Output Voltage Programming LTC4009-1 RCL FROM DC POWER INPUT Table 4. Common RCL Values ADAPTER RATING RCL VALUE (1%) RCL POWER DISSIPATION RCL POWER RATING 0.50A 0.200Ω 0.050W 0.25W 0.75A 0.133Ω 0.075W 0.25W 1.00A 0.100Ω 0.100W 0.25W 1.25A 0.080Ω 0.125W 0.25W 1.50A 0.067Ω 0.150W 0.25W 1.75A 0.057Ω 0.175W 0.25W 2.00A 0.050Ω 0.200W 0.25W Figure 7 shows an optional circuit that can influence the parameters of the input current limit in two ways. The first option is to lower the power dissipation of RCL at the expense of accuracy without changing the input current DCIN D1 INPUT DIODE CLP 2 CF 0.22μF RF 2.49k 1% LTC4009 CLN 1 INTVDD 17 R2 RCL 1% TO REMAINDER OF SYSTEM Q2 2SC2412 Q1 IMX1 R1 1% R3 = R1 1% 4009 F07 Figure 7. Adjusting Input Current Limit 4009fb 17 LTC4009 LTC4009-1/LTC4009-2 APPLICATIONS INFORMATION limit value. The second is to make the input current limit value programmable. The overall accuracy of this circuit needs to be better than the power source current tolerance or be margined such that the worse-case error remains under the power source limits. The accuracy of the Figure 7 circuit is a function of the INTVDD, VBE, RCL, RF, R1 and R3 tolerances. To improve accuracy, the tolerance of RF should be changed from 5.1k, 5% to a 2.49k 1% resistor. RCL and the programming resistors R1 and R3 should also be 1% tolerance such that the dominant error is INTVDD (±3%). Bias resistor R2 can be 5%. When choosing NPN transistors, both need to have good gain (>100) at 10μA levels. Low gain NPNs will increase programming errors. Q1 must be a matched NPN pair. Since RF has been reduced in value by half, the capacitor value of CF should double to 0.22μF to remain effective at filtering out any noise. If you wish to reduce RCL power dissipation for a given current limit, the programming equation becomes: RCL ⎛ 5 • 2.49k ⎞ 100mV – ⎜ ⎝ R1 ⎟⎠ = ILIM If you wish to make the input current limit programmable, the equation becomes: ⎛ 5 • 2.49k ⎞ 100mV – ⎜ ⎝ R1 ⎟⎠ ILIM = RCL The equation governing R2 for both applications is based on the value of R1. R3 should always be equal to R1. R2 = 0.875 • R1 In many notebook applications, there are situations where two different ILIM values are needed to allow two different power adapters or power sources to be used. In such cases, start by setting RLIM for the high power ILIM configuration and then use Figure 7 to set the lower ILIM value. To toggle between the two ILIM values, take the three ground connections shown in Figure 7, combine them into one common connection and use a small-signal NFET (2N7002) to open or close that common connection to circuit ground. When the NFET is off, the circuit is defeated (floating) allowing ILIM to be the maximum value. When the NFET is on, the circuit will become active and ILIM will drop to the lower set value. Monitoring Charge Current The PROG pin voltage can be used to indicate charge current where 1.2085V indicates full programmed current (1C) and zero charge current is approximately equal to RPROG • 11.67μA. PROG voltage varies in direct proportion to the charge current between this zero-current (offset) value and 1.2085V. When monitoring the PROG pin voltage, using a buffer amplifier as shown in Figure 8 will minimize charge current errors. The buffer amplifier may be powered from the INTVDD pin or any supply that is always on when the charger is on. INTVDD 17 LTC4009 – + PROG 13 <30nA TO SYSTEM MONITOR 4009 F08 Figure 8. PROG Voltage Buffer C/10 CHRG Indicator The value chosen for RPROG has a strong influence on charge current monitoring and the accuracy of the C/10 charge indicator output (CHRG). The LTC4009 uses the voltage on the PROG pin to determine when charge current has dropped to the C/10 threshold. The nominal threshold of 400mV produces an accurate low charge current indication of C/10 as long as RPROG = 26.7k, independent of all other current programming considerations. However, it may sometimes be necessary to deviate from this value to satisfy other application design goals. 4009fb 18 LTC4009 LTC4009-1/LTC4009-2 APPLICATIONS INFORMATION If RPROG is greater than 26.7k, the actual level at which low charge current is detected will be less than C/10. The highest value of RPROG that can be used while reliably indicating low charge current before reaching final VBAT is 30.1k. RPROG can safely be set to values higher than this, but low current indication will be lost. If RPROG is less than 26.7k, low charge current detection occurs at a level higher than C/10. More importantly, the LTC4009 becomes increasingly sensitive to reverse current. The lowest value of RPROG that can be used without the risk of erroneous boost operation detection at end of charge is 26.1k. Values of RPROG less than this should not be used. See the Operation section for more information about reverse current. that is actually greater than C/10. If external circuitry is insensitive to, or can ignore, this momentary C/10 indication at start-up, the capacitor can be omitted. By using two different value pull-up resistors, a microprocessor can detect three states from this pin (charging, C/10 and not charging). See Figure 10. When a digital output port (OUT) from the microprocessor drives one of the resistors and a second digital input port polls the network, the charge state can be determined as shown in Table 5. 3.3V LTC4009 33k CHRG 8 The nominal fractional value of IMAX at which C/10 indication occurs is given by: VDD 200k μP OUT IN 4009 F10 400mV – (RPROG • 11.67μA) IC10 = IMAX 1.2085V – (RPROG • 11.67μA) Figure 10. Microprocessor Status Interface Direct digital monitoring of C/10 indication is possible with an external application circuit like the one shown in Figure 9. The LTC4009 initially indicates C/10 until the PWM has started and the actual charge current can be determined (PROG pin voltage). The 0.1μF capacitor from CHRG to GND is used to filter this initial pulse, which is typically less than 2ms when starting toward a final charge current Table 5. Digital Read Back State (IN, Figure 10) OUT STATE LTC4009 CHARGER STATE Hi-Z 1 Off 1 1 C/10 Charge 0 1 Bulk Charge 0 0 VLOGIC INTVDD 17 100k CHRG 100k Q1 TP0610T LTC4009 100k C/10 CHRG Q2 2N7002 8 0.1μF Q3 2N7002 100k 4009 F09 Figure 9. Digital C/10 Indicator 4009fb 19 LTC4009 LTC4009-1/LTC4009-2 APPLICATIONS INFORMATION Input and Output Capacitors In addition to typical input supply bypassing (0.1μF) on DCIN, the relatively high ESR of aluminum electrolytic capacitors is helpful for reducing ringing when hot pluging the charger to the AC adapter. Refer to LTC Application Note 88 for more information. The input capacitor between system power (drain of top FET, Figure 1) and GND is required to absorb all input PWM ripple current, therefore it must have adequate ripple current rating. Maximum RMS ripple current is typically one-half of the average battery charge current. Actual capacitance value is not critical, but using the highest possible voltage rating on PWM input capacitors will minimize problems. Consult with the manufacturer before use. The output capacitor shown across the battery and ground must also absorb PWM output ripple current. The general formula for this capacitor current is: IRMS = ⎛ V ⎞ 0.29 • VBAT • ⎜1 – BAT⎟ ⎝ VCLP ⎠ L1 • fPWM For example, IRMS = 0.22A with: VBAT = 12.6V VCLP = 19V L1 = 10μH fPWM = 550kHz High capacity ceramic capacitors (20μF or more) available from a variety of manufacturers can be used for input/output capacitors. Other alternatives include OS-CON and POSCAP capacitors from Sanyo. Low ESR solid tantalum capacitors have high ripple current rating in a relatively small surface mount package, but exercise caution when using tantalum for input or output bulk capacitors. High input surge current can be created when the adapter is hot-plugged to the charger or when a battery is connected to the charger. Solid tantalum capacitors have a known failure mechanism when subjected to very high surge currents. Select tantalum capacitors that have high surge current ratings or have been surge tested. EMI considerations usually make it desirable to minimize ripple current in battery leads. Adding Ferrite beads or inductors can increase battery impedance at the nominal 550KHz switching frequency. Switching ripple current splits between the battery and the output capacitor in inverse relation to capacitor ESR and the battery impedance. If the ESR of the output capacitor is 0.2Ω and the battery impedance is raised to 4Ω with a ferrite bead, only 5% of the current ripple will flow to the battery. Inductor Selection Higher switching frequency generally results in lower efficiency because of MOSFET gate charge losses, but it allows smaller inductor and capacitor values to be used. A primary effect of the inductor value L1 is the amplitude of ripple current created. The inductor ripple current ΔIL decreases with higher inductance and PWM operating frequency: ⎛ V ⎞ VBAT • ⎜1 – BAT ⎟ ⎝ VCLP ⎠ ΔIL = L1 • fPWM Accepting larger values of ΔIL allows the use of low inductance, but results in higher output voltage ripple and greater core losses. Lower charge currents generally call for larger inductor values. 4009fb 20 LTC4009 LTC4009-1/LTC4009-2 APPLICATIONS INFORMATION maximum ΔIL near 0.6 • IMAX with fPWM at 550kHz and VBAT = 0.5 • VCLP (the point of maximum ΔIL), assuming that inductor value could also vary by 25% at IMAX. The LTC4009 limits maximum instantaneous peak inductor current during every PWM cycle. To avoid unstable switch waveforms, the ripple current must satisfy: ⎛ 150mV ⎞ ΔIL < 2 • ⎜ – IMAX ⎟ ⎝ RSENSE ⎠ Table 6. Minimum Typical Inductor Values VCLP L1 (Typ) IMAX RSENSE <10V 10V to 20V >20V <10V 10V to 20V >20V so choose: L1 > 0.125 • VCLP ⎛ 150mV ⎞ fPWM • ⎜ – IMAX ⎟ ⎝ RSENSE ⎠ ≥10μH ≥20μH ≥28μH ≥5.1μH ≥10μH ≥14μH 1A 1A 1A 2A 2A 2A 100mΩ 100mΩ 100mΩ 50mΩ 50mΩ 50mΩ RIN RPROG 3.01k 3.01k 3.01k 3.01k 3.01k 3.01k 26.7k 26.7k 26.7k 26.7k 26.7k 26.7k To guarantee that a chosen inductor is optimized in any given application, use the design equations provided and perform bench evaluation in the target application, particularly at duty cycles below 20% or above 80% where PWM frequency can be much less than the nominal value of 550kHz. A reasonable starting point for setting ripple current is ΔIL = 0.4 • IMAX. The voltage compliance of internal LTC4009 circuits also imposes limits on ripple current. Select RIN (in Figure 1) to avoid average current errors in high ripple designs. The following equation can be used for guidance: TGATE BOOST Supply RSENSE • ΔIL R • ΔIL ≤ RIN ≤ SENSE 50μA 20μA Use the external components shown in Figure 11 to develop a bootstrapped BOOST supply for the TGATE FET driver. A good set of equations governing selection of the two capacitors is: RIN should not be less than 2.37k or more than 6.04k. Values of RIN greater than 3.01k may cause some reduction in programmed current accuracy. Use these equations and guidelines, as represented in Table 6, to help select the correct inductor value. This table was developed to maintain C1 = 20 • QG , C2 = 20 • C1 4.5V BOOST 20 D1 1N4148 LTC4009 INTVDD 17 C2 2μF C1 0.1μF L1 SW 18 4009 F11 TO RSENSE Figure 11. TGATE Boost Supply 4009fb 21 LTC4009 LTC4009-1/LTC4009-2 APPLICATIONS INFORMATION where QG is the rated gate charge of the top external NFET with VGS = 4.5V. The maximum average diode current is then given by: ID = QG • 665kHz To improve efficiency by increasing VGS applied to the top FET, substitute a Schottky diode with low reverse leakage for D1. PWM jitter has been observed in some designs operating at higher VIN/VOUT ratios. This jitter does not substantially affect DC charge current accuracy. A series resistor with a value of 5Ω to 20Ω can be inserted between the cathode of D1 and the BOOST pin to remove this jitter if present. A resistor case size of 0603 or larger is recommended to lower ESL and achieve the best results. FET Selection Two external power MOSFETs must be selected for use with the charger: an N-channel power switch (top FET) and an N-channel synchronous rectifier (bottom FET). Peak gate-to-source drive levels are internally set to about 5V. Consequently, logic-level FETs must be used. In addition to the fundamental DC current, selection criteria for these MOSFETs also include channel resistance RDS(ON), total gate charge QG, reverse transfer capacitance CRSS, maximum rated drain-source voltage BVDSS and switching characteristics such as td(ON/OFF). Power dissipation for each external FET is given by: PD(TOP) = VBAT • IMAX 2 • (1+ δΔT)RDS(ON) VCLP where δ is the temperature dependency of RDS(ON), ΔT is the temperature rise above the point specified in the FET data sheet for RDS(ON) and k is a constant inversely related to the internal LTC4009 top gate driver. The term (1 + δΔT) is generally given for a MOSFET in the form of a normalized RDS(ON) curve versus temperature, but δ of 0.005/°C can be used as a suitable approximation for logic-level FETs if other data is not available. CRSS = QGD/dVDS is usually specified in the MOSFET characteristics. The constant k = 2 can be used in estimating top FET dissipation. The LTC4009 is designed to work best with external FET switches with a total gate charge at 5V of 15nC or less. For VCLP < 20V, high charge current efficiency generally improves with larger FETs, while for VCLP > 20V, top gate transition losses increase rapidly to the point that using a topside NFET with higher RDS(ON) but lower CRSS can actually provide higher efficiency. If the charger will be operated with a duty cycle above 85%, overall efficiency is normally improved by using a larger top FET. The synchronous (bottom) FET losses are greatest at high input voltage or during a short circuit, which forces a low side duty cycle of nearly 100%. Increasing the size of this FET lowers its losses but increases power dissipation in the LTC4009. Using asymmetrical FETs will normally achieve cost savings while allowing optimum efficiency. Select FETs with BVDSS that exceeds the maximum VCLP voltage that will occur. Both FETs are subjected to this level of stress during operation. Many logic-level MOSFETs are limited to 30V or less. + k • VCLP 2 • IMAX • CRSS • 665kHz PD(BOT) VCLP – VBAT ) • IMAX 2 • (1+ δΔT)RDS(ON) ( = VCLP 4009fb 22 LTC4009 LTC4009-1/LTC4009-2 APPLICATIONS INFORMATION The LTC4009 uses an improved adaptive TGATE and BGATE drive that is insensitive to MOSFET inertial delays, td(ON/OFF), to avoid overlap conduction losses. Switching characteristics from power MOSFET data sheets apply only to a specific test fixture, so there is no substitute for bench evaluation of external FETs in the target application. In general, MOSFETs with lower inertial delays will yield higher efficiency. Diode Selection A Schottky diode in parallel with the bottom FET and/or top FET in an LTC4009 application clamps SW during the non-overlap times between conduction of the top and bottom FET switches. This prevents the body diode of the MOSFETs from forward biasing and storing charge, which could reduce efficiency as much as 1%. One or both diodes can be omitted if the efficiency loss can be tolerated. A 1A Schottky is generally a good size for 3A chargers due to the low duty cycle of the non-overlap times. Larger diodes can actually result in additional efficiency (transition) losses due to larger junction capacitance. Loop Compensation and Soft-Start The three separate PWM control loops of the LTC4009 can be compensated by a single set of components attached between the ITH pin and GND. As shown in the typical LTC4009 application, a 6.04k resistor in series with a capacitor of at least 0.1μF provides adequate loop compensation for the majority of applications. The LTC4009 can be soft-started with the compensation capacitor on the ITH pin. At start-up, ITH will quickly rise to about 0.25V, then ramp up at a rate set by the compensation capacitor and the 40μA ITH bias current. The full programmed charge current will be reached when ITH reaches approximately 2V. With a 0.1μF capacitor, the time to reach full charge current is usually greater than 1.5ms. This capacitor can be increased if longer start-up times are required, but loop bandwidth and dynamic response will be reduced. INTVDD Regulator Output Bypass the INTVDD regulator output to GND with a low ESR X5R or X7R ceramic capacitor with a value of 0.47μF or larger. The capacitor used to build the BOOST supply (C2 in Figure 11) can serve as this bypass. Do not draw more than 30mA from this regulator for the host system, governed by IC power dissipation. Calculating IC Power Dissipation The user should ensure that the maximum rated junction temperature is not exceeded under all operating conditions. The thermal resistance of the LTC4009 package (θJA) is 37°C/W, provided the Exposed Pad is in good thermal contact with the PCB. The actual thermal resistance in the application will depend on forced air cooling and other heat sinking means, especially the amount of copper on the PCB to which the LTC4009 is attached. The following formula may be used to estimate the maximum average power dissipation PD (in watts) of the LTC4009, which is dependent upon the gate charge of the external MOSFETs. This gate charge, which is a function of both gate and drain voltage swings, is determined from specifications or graphs in the manufacturer’s data sheet. For the equation below, find the gate charge for each transistor assuming 5V gate swing and a drain voltage swing equal to the maximum VCLP voltage. Maximum LTC4009 power dissipation under normal operating conditions is then given by: PD = DCIN(2.8mA + IDD + 665kHz(QTGATE + QBGATE)) – 5IDD where: IDD = Average external INTVDD load current, if any QTGATE = Gate charge of external top FET in Coulombs QBGATE = Gate charge of external bottom FET in Coulombs 4009fb 23 LTC4009 LTC4009-1/LTC4009-2 APPLICATIONS INFORMATION PCB Layout Considerations To prevent magnetic and electrical field radiation and high frequency resonant problems, proper layout of the components connected to the LTC4009 is essential. Refer to Figure 12. For maximum efficiency, the switch node rise and fall times should be minimized. The following PCB design priority list will help insure proper topology. Layout the PCB using this specific order. 1. Input capacitors should be placed as close as possible to switching FET supply and ground connections with the shortest copper traces possible. The switching FETs must be on the same layer of copper as the input capacitors. Vias should not be used to make these connections. 2. Place the LTC4009 close to the switching FET gate terminals, keeping the connecting traces short to produce clean drive signals. This rule also applies to IC supply and ground pins that connect to the switching FET source pins. The IC can be placed on the opposite side of the PCB from the switching FETs. 3. Place the inductor input as close as possible to the switching FETs. Minimize the surface area of the switch node. Make the trace width the minimum needed to support the programmed charge current. Use no copper fills or pours. Avoid running the connection on multiple copper layers in parallel. Minimize capacitance from the switch node to any other trace or plane. 4. Place the charge current sense resistor immediately adjacent to the inductor output, and orient it such that current sense traces to the LTC4009 are not long. These feedback traces need to be run together as a single pair with the smallest spacing possible on any given layer on which they are routed. Locate any filter component on these traces next to the LTC4009, and not at the sense resistor location. 5. Place output capacitors adjacent to the sense resisitor output and ground. 6. Output capacitor ground connections must feed into the same copper that connects to the input capacitor ground before connecting back to system ground. 7. Connection of switching ground to system ground, or any internal ground plane, should be single-point. If the system has an internal system ground plane, a good way to do this is to cluster vias into a single star point to make the connection. 8. Route analog ground as a trace tied back to the LTC4009 GND paddle before connecting to any other ground. Avoid using the system ground plane. A useful CAD technique is to make analog ground a separate ground net and use a 0Ω resistor to connect analog ground to system ground. 9. A good rule of thumb for via count in a given high current path is to use 0.5A per via. Be consistent when applying this rule. SWITCH NODE L1 RSENSE VIN VBAT CIN HIGH FREQUENCY CIRCULATING PATH COUT D1 + BAT ANALOG GROUND GND SWITCHING GROUND 4009 F12 SYSTEM GROUND Figure 12. High Speed Switching Path 4009fb 24 LTC4009 LTC4009-1/LTC4009-2 APPLICATIONS INFORMATION 10. If possible, place all the parts listed above on the same PCB layer. 11. Copper fills or pours are good for all power connections except as noted above in Rule 3. Copper planes on multiple layers can also be used in parallel. This helps with thermal management and lowers trace inductance, which further improves EMI performance. 12. For best current programming accuracy, provide a Kelvin connection from RSENSE to CSP and CSN. See Figure 13 for an example. 13. It is important to minimize parasitic capacitance on the CSP and CSN pins. The traces connecting these pins to their respective resistors should be as short as possible. DIRECTION OF CHARGING CURRENT RSENSE 4009 F13 TO CSP RIN TO CSN RIN Figure 13. Kelvin Sensing of Charge Current 4009fb 25 LTC4009 LTC4009-1/LTC4009-2 TYPICAL APPLICATION 12.6V 2 Amp Charger FROM ADAPTER 15V AT 2A R7 50mΩ D2 POWER TO SYSTEM C1 0.1μF R1 3k D1 R 8 3 R2 22.1k 5 R3 2.43k TO/FROM MCU C4 0.1μF CHRG DCIN CLP CLN DCDIV BOOST SHDN GND 12 C2 0.1μF R4 6.04k 13 C3 4.7nF R5 26.7k BULK CHARGE Q1 R6 53.6k 2 ITH CSP CSN C8 10μF 20 R15 0Ω* 21 15 14 C5 0.1μF Q2 D4 Q3 C6 2μF OR R14 100k D6 18V ZENER Q4 PFET FDR858P D3 L1 10μH TO POWER SYSTEM LOAD WHEN ADAPTER IS NOT PRESENT, USE SCHOTTKY DIODE D5 OR THE COMBINATION OF R14, D6 AND Q4 R9 3.01k R11 50mΩ R10 3.01k 11 BAT 9 FBDIV PROG VFB D5 1 19 TGATE LTC4009 18 SW 7 17 ACP INTVDD 4 16 ICL BGATE 6 R8 5.1k 10 R12 294k R13 31.2k C10 10pF C9 10μF + 12.6V Li-Ion BATTERY 4009 TA02 D2, D4: MBR230LSFT1 D3:CMDSH-3 Q1: 2N7002 Q2, Q3: Si7212DN OR SiA914DJ OR Si4816BDY (OMIT D4) L1: IHLP-2525CZER100M11 *SEE TGATE BOOST SUPPLY IN APPLICATIONS INFORMATION 4009fb 26 LTC4009 LTC4009-1/LTC4009-2 PACKAGE DESCRIPTION UF Package 20-Lead Plastic QFN (4mm × 4mm) (Reference LTC DWG # 05-08-1710 Rev A) 0.70 ±0.05 4.50 ± 0.05 3.10 ± 0.05 2.00 REF 2.45 ± 0.05 2.45 ± 0.05 PACKAGE OUTLINE 0.25 ±0.05 0.50 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED 4.00 ± 0.10 0.75 ± 0.05 R = 0.05 TYP R = 0.115 TYP 19 20 0.40 ± 0.10 PIN 1 TOP MARK (NOTE 6) 4.00 ± 0.10 PIN 1 NOTCH R = 0.20 TYP OR 0.35 × 45° CHAMFER BOTTOM VIEW—EXPOSED PAD 1 2.00 REF 2.45 ± 0.10 2 2.45 ± 0.10 (UF20) QFN 01-07 REV A 0.200 REF 0.00 – 0.05 0.25 ± 0.05 0.50 BSC NOTE: 1. DRAWING IS PROPOSED TO BE MADE A JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGD-1)—TO BE APPROVED 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 4009fb Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 27 LTC4009 LTC4009-1/LTC4009-2 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LTC1760 Smart Battery System Manager Autonomous Power Management and Battery Charging for Two Smart Batteries, SMBus Rev 1.1 Compliant LTC1769 2A Switching Battery Charger Constant-Current/Constant-Voltage Switching Regulator, Input Current Limiting Maximizes Charge Current LTC1960 Dual Battery Charger/Selector with SPI 11-Bit V-DAC, 0.8% Voltage Accuracy, 10-Bit I-DAC, 5% Current Accuracy LTC4006 Small, High Efficiency, Fixed Voltage, Lithium-Ion Battery Chargers with Termination Complete Charger for 3- or 4-Cell Li-Ion Batteries, AC Adapter Current Limit and Thermistor Sensor, 16-Pin SSOP Package LTC4007/LTC4007-1 High Efficiency, Programmable Voltage, Lithium-Ion Battery Charger with Termination Complete Charger for 3- or 4-Cell Li-Ion Batteries, AC Adapter Current Limit, Thermistor Sensor and Indicator Outputs LTC4008/LTC4008-1 High Efficiency, Programmable Voltage/Current Battery Constant-Current/Constant-Voltage Switching Regulator, Resistor Chargers Voltage/Current Programming, Thermistor Sensor and Indicator Outputs, AC Adapter Current Limit (Omitted on 4008-1) LTC4010 High Efficiency Standalone Nickel Battery Charger Complete NiMH/NiCd Charger in a Small 16-Lead Package, ConstantCurrent Switching Regulator LTC4011 High Efficiency Standalone Nickel Battery Charger Complete NiMH/NiCd Charger in a Small 20-Lead Package, ConstantCurrent Switching Regulator, PowerPathTM Control and Indicators LTC4012/LTC4012-1 LTC4012-2 High Efficiency, Multichemistry Battery Chargers with PowerPath Control Constant-Current/Constant-Voltage Switching Regulator in a 20-Lead QFN Package, AC Adapter Current Limit, PFET Input Ideal Diode Control, Indicator Outputs LTC4060 Standalone Linear NiMH/NiCd Fast Charger Complete NiMH/NiCd Charger in a Small 16-Pin Package, No Sense Resistor or Blocking Diode Required LTC4100 Smart Battery Charger Controller Level 2 Charger Operates With or Without MCU Host, SMBus Rev 1.1 Compliant LTC4110 Battery Backup Manager Multi-Chemistry and Smart Battery Charge and Discharge Manager. Four Operating Modes: Battery Backup, Battery Charge, Battery Calibration, Shutdown. 5mm × 7mm QFN-38 Package LTC4150 Coulomb Counter/Battery Gas Gauge High Side Sense of Charge Quantity and Polarity in a 10-Pin MSOP LTC4411 2.6A Low Loss Idea Diode No External MOSFET, Automatic Switching Between DC Sources, 140mΩ On-Resistance in ThinSOTTM package LTC4412/LTC4412HV Low Loss PowerPath Controllers Very Low Loss Replacement for Power Supply ORing Diodes Using Minimal External Complements, Operates Up to 28V (36V for HV) LTC4413 Dual 2.6A, 2.5V to 5.5V Ideal Diodes Low Loss Replacement for ORing Diodes, 100mΩ On-Resistance LTC4414 36V, Low Loss PowerPath Controller for Large PFETs Low Loss Replacement for ORing Diodes, Operates Up to 36V LTC4416 Dual Low Loss PowerPath Controllers Low Loss Replacement for ORing Diodes, Operates Up to 36V, Drives Large PFETs, Programmable, Autonomous Switching PowerPath and ThinSOT are trademarks of Linear Technology Corporation. 4009fb 28 Linear Technology Corporation LT 0109 REV B • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2008