LINER LTC4012CUF-2PBF

LTC4012/
LTC4012-1/LTC4012-2
High Efficiency,
Multi-Chemistry Battery Charger
with PowerPath Control
DESCRIPTION
FEATURES
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General Purpose Battery Charger Controller
Efficient 550kHz Synchronous Buck PWM Topology
±0.5% Output Float Voltage Accuracy
Programmable Charge Current: 4% Accuracy
Programmable AC Adapter Current Limit:
3% Accuracy
No Audible Noise with Ceramic Capacitors
INFET Low Loss Ideal Diode PowerPath™ Control
Wide Input Voltage Range: 6V to 28V
Wide Output Voltage Range: 2V to 28V
Indicator Outputs for AC Adapter Present, Charging,
C/10 Current Detection and Input Current Limiting
Analog Charge Current Monitor
Micropower Shutdown
20-Pin 4mm × 4mm × 0.75mm QFN Package
APPLICATIONS
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Notebook Computers
Portable Instruments
Battery Backup Systems
L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. PowerPath
is a trademark of Linear Technology Corporation. All other trademarks are the property of their
respective owners. Protected by U.S. Patents including 5723970.
The LTC4012 is a constant-current/constant-voltage
battery charger controller. It uses a synchronous
quasi-constant frequency PWM control architecture
that will not generate audible noise with ceramic
bulk capacitors. Charge current is set by external
resistors and can be monitored as an output voltage.
With no built-in termination, the LTC4012 family charges
a wide range of batteries under external control.
The LTC4012 features fully adjustable output voltage, while
the LTC4012-1 and LTC4012-2 can be pin-programmed for
Lithium-Ion/Polymer battery packs of 1-, 2-, 3- or 4-series
cells. The LTC4012-1 provides output voltage of 4.1V/cell
and the LTC4012-2 is a 4.2V/cell version.
The device includes AC adapter input current limiting, which
maximizes charge rate for a fixed input power level. An
external sense resistor programs the input current limit,
and the ICL status pin indicates reduced charge current as
a result of AC adapter current limiting. Ideal diode control
at the adaptor input improves charger efficiency.
The CHRG status pin is active during all charging modes,
including special indication for low charge current.
TYPICAL APPLICATION
FROM
ADAPTER
13V TO 28V
25mΩ
0.1μF
CLP
DCIN
CLN
BOOST
EFFICIENCY (%)
TGATE
ACP
CHRG
SW
INTVDD
ICL
BGATE
SHDN
GND
ITH
CSP
100
10000
EFFICIENCY
95
0.1μF
0.1μF
TO/FROM
MCU
5.1k
Efficiency at DCIN = 20V
POWER TO
SYSTEM
2μF
6.8μH
90
POWER LOSS
85
80
VOUT = 12.3V
RSENSE = 33mΩ
RIN = 3.01k
RPROG = 26.7k
75
3.01k
6.04k
70
0.1μF
4.7nF
3.01k
CSN
PROG
26.7k
33mΩ
LTC4012
BAT
FBDIV
1000
POWER LOSS (mW)
INFET
20μF
0
0.5
1
1.5
2
CHARGE CURRENT (A)
2.5
3
100
PIN NAME
20μF
301k
VFB
32.8k
+
PART INFET DCDIV
LTC4009
X
LTC4012
X
12.3V
Li-Ion
BATTERY
4012 TA02
4012 TA01
4012f
1
LTC4012/
LTC4012-1/LTC4012-2
ABSOLUTE MAXIMUM RATINGS
PIN CONFIGURATION
(Note 1)
LTC4012-1
LTC4012-2
BGATE
INTVDD
TOP VIEW
SW
BGATE
INTVDD
SW
TGATE
BOOST
TOP VIEW
BOOST
LTC4012
BOOST to SW............................................... –0.3V to 7V
SHDN, FVS0, FVS1 or VFB to GND................ –0.3V to 7V
ACP, CHRG or ICL to GND ......................... –0.3V to 30V
Operating Temperature Range
(Note 2)........................................................ 0°C to 85°C
Junction Temperature (Note 3) ............................. 125°C
Storage Temperature Range...................–65°C to 150°C
TGATE
DCIN ........................................................... –14V to 30V
DCIN to CLP ................................................ –32V to 20V
CLP, CLN or SW to GND ............................. –0.3V to 30V
CLP to CLN ............................................................±0.3V
CSP, CSN or BAT to GND ............................ –0.3V to 28V
CSP to CSN ............................................................±0.3V
BOOST to GND ........................................... –0.3V to 36V
20 19 18 17 16
20 19 18 17 16
CLN 1
15 CSP
CLN 1
CLP 2
14 CSN
CLP 2
15 CSP
14 CSN
13 PROG
INFET 3
DCIN 4
12 ITH
DCIN 4
12 ITH
ACP 5
11 BAT
ACP 5
11 BAT
8
9 10
FVS1
7
FVS0
ICL
6
ICL
CHRG
9 10
13 PROG
21
CHRG
8
VFB
7
FBDIV
6
SHDN
21
SHDN
INFET 3
UF PACKAGE
20-LEAD (4mm s 4mm) PLASTIC QFN
UF PACKAGE
20-LEAD (4mm s 4mm) PLASTIC QFN
TJMAX = 125°C, JA = 37°C/W
EXPOSED PAD (PIN 21) IS GND, MUST BE SOLDERED TO PCB
TJMAX = 125°C, JA = 37°C/W
EXPOSED PAD (PIN 21) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH
TAPE AND REEL
PART MARKING
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LTC4012CUF#PBF
LTC4012CUF#TRPBF
4012
20-Lead (4mm × 4mm) Plastic QFN
0°C to 85°C
LTC4012CUF-1#PBF
LTC4012CUF-1#TRPBF
40121
20-Lead (4mm × 4mm) Plastic QFN
0°C to 85°C
LTC4012CUF-2#PBF
LTC4012CUF-2#TRPBF
40122
20-Lead (4mm × 4mm) Plastic QFN
0°C to 85°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
4012f
2
LTC4012/
LTC4012-1/LTC4012-2
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. DCIN = 20V, BAT = 12V, GND = 0V unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Charge Voltage Regulation
VTOL
VBAT Accuracy (See Test Circuits)
LTC4012
LTC4012-1/LTC4012-2
l
–0.5
–0.8
0.5
0.8
%
%
l
–0.6
–0.8
0.6
0.8
%
%
IVFB
VFB Input Bias Current
VFB = 1.2V
RON
FBDIV On Resistance
ILOAD = 100μA
l
±20
ILEAK-FBDIV
FBDIV Output Leakage Current
SHDN = 0V, FBDIV = 0V
l
VBOV
VFB Overvoltage Threshold
LTC4012
BAT Overvoltage Threshold
LTC4012-1/LTC4012-2, Relative to
Selected Output Voltage
nA
85
190
Ω
–1
0
1
μA
l
1.235
1.281
1.32
V
l
103
106
109
%
l
–4
–5
4
5
%
%
Charge Current Regulation
Charge Current Accuracy with RIN = 3.01k,
6V < BAT < 18V (LTC4012)
6V < BAT < 15V (LTC4012-1, LTC4012-2)
RPROG = 26.7k
VSENSE = 0mV, PROG = 1.2V
–12.75
–11.67
–10.95
μA
AI
Current Sense Amplifier Gain (PROG ΔI) with
RIN = 3.01k, 6V < BAT < 18V (LTC4012)
6V < BAT < 15V (LTC4012-1, LTC4012-2)
VSENSE Step from 0mV to 5mV,
PROG = 1.2V
–1.78
–1.66
–1.54
μA
VCS-MAX
Maximum Peak Current Sense Threshold Voltage
per Cycle (RIN = 3.01k)
ITH = 2V
ITH = 5V
140
195
325
250
430
mV
mV
VC10
C/10 Indicator Threshold Voltage
PROG Falling
340
400
460
mV
VREV
Reverse Current Threshold Voltage
PROG Falling
180
253
295
mV
97
96
100
100
103
104
mV
mV
ITOL
l
l
Input Current Regulation
VCL
Current Limit Threshold
CLP – CLN
ICLN
CLN Input Bias Current
CLN = CLP
VICL
ICL Indicator Threshold
(CLP – CLN) – VCL
l
±100
–8
–5
nA
–2
mV
28
V
5.25
V
CLP Supply
OVR
Operating Voltage Range
6
VUVLO
CLP Undervoltage Lockout Threshold
VUV(HYST)
UVLO Threshold Hysteresis
ICLPO
CLP Operating Current
CLP = 20V, No Gate Loads
VACP
AC Present Threshold Voltage
DCIN – BAT, DCIN Rising
VACP(HYST)
ACP Threshold Hysteresis Voltage
VIL
SHDN Input Voltage Low
l
VIH
SHDN Input Voltage High
l
RIN
SHDN Pull-Down Resistance
CLP Increasing
l
4.65
4.85
200
mV
2
3
mA
500
650
mV
Shutdown
l
350
200
mV
300
1.4
V
40
ICLPS
CLP Shutdown Current
CLP = 12V, DCIN = 0V
SHDN = 0V
l
ILEAK-BAT
BAT Leakage Current
SHDN = 0V or DCIN = 0V,
0V ≤ CSP = CSN = BAT ≤ 18V
l
ILEAK-CSN
CSN Leakage Current
SHDN = 0V or DCIN = 0V,
0V ≤ CSP = CSN = BAT ≤ 20V
l
mV
kΩ
15
350
25
500
μA
μA
–1
0
1
μA
–1
0
1
μA
4012f
3
LTC4012/
LTC4012-1/LTC4012-2
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. DCIN = 20V, BAT = 12V, GND = 0V unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
ILEAK-CSP
CSP Leakage Current
SHDN = 0V or DCIN = 0V,
0V ≤ CSP = CSN = BAT ≤ 20V
l
–1
0
1
UNITS
μA
ILEAK-SW
SW Leakage Current
SHDN = 0V or DCIN = 0V,
0V ≤ SW ≤ 20V
l
–1
0
2
μA
l
4.85
5
5.15
V
–0.4
–1
%
85
130
mA
633
kHz
INTVDD Regulator
INTVDD
Output Voltage
No Load
ΔVDD
Load Regulation
IDD = 20mA
IDD
Short-Circuit Current (Note 5)
INTVDD = 0V
50
Switching Regulator
IITH
ITH Current
fTYP
Typical Switching Frequency
fMIN
Minimum Switching Frequency
DCMAX
tR-TG
ITH = 1.4V
–40/+90
μA
467
550
CLOAD = 3.3nF
20
25
Maximum Duty Cycle
CLOAD = 3.3nF
98
99
TGATE Rise Time
CLOAD = 3.3nF, 10% – 90%
60
110
ns
tF-TG
TGATE Fall Time
CLOAD = 3.3nF, 90% – 10%
50
110
ns
tR-BG
BGATE Rise Time
CLOAD = 3.3nF, 10% – 90%
60
110
ns
tF-BG
BGATE Fall Time
CLOAD = 3.3nF, 90% – 10%
60
110
ns
tNO
TGATE, BGATE Non-Overlap Time
CLOAD = 3.3nF, 10% – 10%
110
kHz
%
ns
PowerPath Control
IDCIN
DCIN Input Current
0V ≤ DCIN ≤ CLP
l
–10
15
60
mV
15
25
35
mV
–45
–25
VFTO
Forward Turn-on Voltage (DCIN Detection Threshold)
DCIN-CLP, DCIN rising
l
VFR
Forward Regulation Voltage
DCIN-CLP
l
l
60
μA
VRTO
Reverse Turn-Off Voltage
DCIN-CLP, DCIN falling
–15
mV
VOL(INFET)
INFET Output Low Voltage, Relative to CLP
DCIN-CLP = 0.1V, IINFET =1μA
–6.5
–5
V
VOH(INFET)
INFET Output High Voltage, Relative to CLP
DCIN-CLP = –0.1V, IINFET =–5μA
–250
250
mV
tIF(ON)
INFET Turn-On Time
To CLP-INFET > 3V, CINFET = 1nF
85
180
μs
tIF(OFF)
INFET Turn-Off Time
To CLP-INFET < 1.5V, CINFET = 1nF
2.5
6
μs
0.5
V
Float Voltage Select Inputs (LTC4012-1/LTC4012-2 Only)
VIL
Input Voltage Low
VIH
Input Voltage High
IIN
Input Current
3.5
0V ≤ VIN ≤ 5V
–10
V
10
μA
500
mV
Indicator Outputs
VOL
Output Voltage Low
ILOAD = 100μA, PROG = 1.2V
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4012 is guaranteed to meet performance specifications
over the 0°C to 85°C operating temperature range.
Note 3: Operating junction temperature TJ (in °C) is calculated from
the ambient temperature TA and the total continuous package power
dissipation PD (in watts) by the formula TJ = TA + (θJA • PD). Refer to the
Applications Information section for details.
Note 4: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to GND, unless otherwise
specified.
Note 5: Output current may be limited by internal power dissipation. Refer
to the Applications Information section for details.
4012f
4
LTC4012/
LTC4012-1/LTC4012-2
TEST CIRCUITS
LTC4012
FROM ICL
(CLP = CLN)
1.2085V
PROG
13
–
–
–
+
EA
ITH
VFB
9
12
+
1.2085V
TARGET
LTC1055
–
0.6V
40012 TC01
LTC4012-1
LTC4012-2
FROM ICL
(CLP = CLN)
1.2085V
PROG
13
–
–
–
+
EA
BAT
ITH
11
12
TARGET VARIES
WITH FVSO,1
+
LTC1055
–
0.6V
40012 TC02
4012f
5
LTC4012/
LTC4012-1/LTC4012-2
TYPICAL PERFORMANCE CHARACTERISTICS
(TA = 25°C unless otherwise noted. L = IHLP-2525 6.8μH)
Efficiency at DCIN = 20V, BAT = 8V
Efficiency at DCIN = 20V, BAT = 12V
100
10000
100
10000
RSENSE = 33mΩ
RIN = 3.01k
RSENSE = 33mΩ
RIN = 3.01k
EFFICIENCY (%)
1000
POWER LOSS
85
POWER LOSS
90
1000
POWER LOSS(mW)
EFFICIENCY
90
80
EFFICIENCY
95
POWER LOSS(mW)
EFFICIENCY (%)
95
85
0
0.5
1
1.5
2
CHARGE CURRENT (A)
2.5
100
3
80
0
0.5
1
1.5
2
CHARGE CURRENT (A)
2.5
4012 G01
3
100
4012 G02
Efficiency at DCIN = 20V, BAT = 16V
100
VFB Line Regulation
10000
0.10
LTC4012 TEST CIRCUIT
0.08
EFFICIENCY
0.06
1000
POWER LOSS
VFB ERROR (%)
90
POWER LOSS(mW)
EFFICIENCY (%)
95
0.5
1
1.5
2
CHARGE CURRENT (A)
2.5
0
–0.02
–0.06
RSENSE = 33mΩ
RIN = 3.01k
0
0.02
–0.04
85
80
0.04
–0.08
3
100
–0.10
10
5
20
25
15
CLP PIN VOLTAGE (V)
30
4012 G03
4012 G04
2
250
RON (Ω)
225
200
175
LOAD
STATE
150
1
2A
1A
12.1V
1A
3A
RECONNECT
DISCONNECT
TIME (1ms/DIV)
CLP = 20V
VOUT = 12.3V
125
100
4012 G06
CHARGE CURRENT ERROR (%)
BATTERY VOLTAGE
(500mV/DIV)
CLP = BAT + 3V
(CLP ≥ 6V)
275
Charge Current Accuracy
Battery Load Dump
FBDIV Pin RON vs Battery Voltage
300
0
DCIN = 24V
RPROG = 35.7k
–1
–2
DCIN = 12V
RPROG = 26.7k
–3
–4
RSENSE = 33mΩ
RIN = 3.01k
–5
–6
75
0
5
20
15
10
BATTERY VOLTAGE (V)
25
4012 G05
0
2
4
6 8 10 12 14 16 18 20 22 24
BATTERY VOLTAGE (V)
4012 G07
4012f
6
LTC4012/
LTC4012-1/LTC4012-2
TYPICAL PERFORMANCE CHARACTERISTICS
(TA = 25°C unless otherwise noted. L = IHLP-2525 6.8μH)
Charge Current Line Regulation
ICHG = 2A
0
ICHG = 3A
–0.2
ICHG = 3A
3.0
0.1
–0.1
3.0
2.5
2.5
ICHG = 2A
2.0
1.5
ICHG = 1A
1.0
0.5
DCIN = 20V
RSENSE = 33mΩ
RIN = 3.01k
0
–0.5
–0.5
11.0
25
15
10
20
DCIN PIN VOLTAGE (V)
5
ICHG
1.5
1.0
0.5
2.5A BULK CHARGE
2.1A INPUT CURRENT LIMIT
0
–0.3
–0.4
IIN
2.0
CURRENT (A)
BAT = 6V
0.4 RSENSE = 33mΩ
RIN = 3.01k
0.3
ICHG = 1A
0.2
CHARGE CURRENT (A)
CHARGE CURRENT ERROR (%)
Input Current Limit
Charge Current Load Regulation
3.5
0.5
11.4
ICL STATE
–0.5
12.6
11.8
12.2
BATTERY VOLTAGE (V)
–1.0
13.0
0
0.5
1.0
1.5
SYSTEM LOAD (A)
2.5
4012 G09
4012 G08
PWM Soft-Start
4012 G10
PWM Frequency vs Duty Cycle
Gate Drive Non-Overlap
EXTERNAL FET DRIVE (1V/DIV)
600
ITH
1V/DIV
PROG
1V/DIV
SHDN
5V/DIV
BGATE
TGATE
4012 G11
ICHG = 750mA
500
PWM FREQUENCY (kHz)
ICHG
2A/DIV
TIME (500μs/DIV)
2.0
4012 G12
TIME (80ns/DIV)
400
300
200
CLP = 6V
CLP = 12V
CLP = 20V
CLP = 25V
100
0
0
20
40
60
DUTY CYCLE (%)
100
80
4012 G13
PWM Frequency
vs Charge Current
25
600
BATTERY CURRENT (μA)
PWM FREQUENCY (kHz)
DC1256-CLASS
APPLICATION
DCIN = 0V
BAT = 5V
500
BAT = 12V
400
CLP = 15V
RSENSE = 33mΩ
RIN = 3.01k
300
200
0
0.5
1.0
1.5
2.0
CHARGE CURRENT (A)
20
2.5
3.0
4012 G14
VGS = 0V
LTC4012,
ALL PINS
DCIN = 0V
10
0
PFET VGS (1V/DIV)
IDCIN, REVERSE
(5A/DIV)
15
0A
LTC4012,
BAT PINS
DCIN = 20V
5
BAT = 14.5V
100
0
INFET Response Time to
DCIN Short to Ground
Battery Shutdown Current
0
5
20
10
15
BATTERY VOLTAGE (V)
25
TIME (1μs/DIV)
DCIN = 15V
INFET = Si7423DN
IOUT = <50mA
VOUT = 12.3V
COUT = 0.27F
4012 G16
4012 G15
4012f
7
LTC4012/
LTC4012-1/LTC4012-2
PIN FUNCTIONS
CLN (Pin 1): Adapter Input Current Limit Negative Input.
The LTC4012 senses voltage on this pin to determine if
less charge current should be sourced to limit total input
current. The threshold is set 100mV below the CLP pin. An
external filter should be used to remove switching noise.
This input should be tied to CLP if not used. Operating
voltage range is (CLP – 110mV) to CLP.
CLP (Pin 2): Adapter Input Current Limit Positive Input.
The LTC4012 also draws power from this pin, including
a small amount for some shutdown functions. Operating
voltage range is GND to 28V.
INFET (Pin 3): PowerPath Control Output. This output
drives the gate of a PMOS pass transistor connected
between the DC input (DCIN) and the raw system supply
rail (CLP) to maintain a forward voltage of 25mV when a
DC input source is present. INFET is internally clamped
about 6V below CLP. Maximum operating voltage is CLP,
which is used to turn off the input PMOS transistor when
the DC input is removed.
DCIN (Pin 4): DC Sense Input. One of two voltage sense
inputs to the internal PowerPath controller (the other input
to the controller is CLP). This input is usually supplied
from an input DC power source. Operating voltage ranges
from GND to 28.2V.
ACP (Pin 5): Active-Low AC Adapter Present Indicator
Output. This open-drain output pulls to GND when adequate
AC adapter (DCIN) voltage is present. This output should
be left floating if not used.
SHDN (Pin 6): Active-low Shutdown Input. Driving SHDN
below 300mV unconditionally forces the LTC4012 into the
shutdown state. This input has a 40kΩ internal pulldown
to GND. Operating voltage range is GND to INTVDD.
CHRG (Pin 7): Active-Low Charge Indicator Output. This
open-drain output provides three levels of information
about charge status using a strong pull-down, 25μA weak
pull-down or high impedance. Refer to the Operation and
Applications Information sections for further details. This
output should be left floating if not used.
ICL (Pin 8): Active-Low Input Current Limit Indicator Output. This open-drain output pulls to GND when the charge
current is reduced because of AC adapter input current
limiting. This output should be left floating if not used.
VFB (Pin 9, LTC4012): Battery Voltage Feedback Input. An
external resistor divider between FBDIV and GND with the
center tap connected to VFB programs the charger output
voltage. In constant voltage mode, this pin is nominally
at 1.2085V. Refer to the Applications Information section
for complete details on programming battery voltage.
Operating voltage range is GND to 1.25V.
FVS0 (Pin 9, LTC4012-1/LTC4012-2): Battery Voltage
Select Input (LSB). This pin is one of two pins used on the
LTC4012-1 or LTC4012-2 to select one of four preset battery
voltages. Selection is done by connecting to either GND or
INTVDD. Operating voltage range is GND to INTVDD.
FBDIV (Pin 10, LTC4012): Battery Voltage Feedback
Resistor Divider Source. The LTC4012 connects this pin
to BAT when charging is in progress. FBDIV is an opendrain PFET output to BAT with an operating voltage range
of GND to BAT.
FVS1 (Pin 10, LTC4012-1/LTC4012-2): Battery Voltage
Select Input (MSB). This pin is one of two pins used on
the LTC4012-1 or LTC4012-2 to select one of four preset
battery voltages. Selection is done by connecting to
either GND or INTVDD. Operating voltage range is GND
to INTVDD.
BAT (Pin 11): Battery Pack Connection. The LTC4012 uses
the voltage on this pin to control PWM operation when
charging. Operating voltage range is GND to CLN.
ITH (Pin 12): PWM Control Voltage and Compensation
Node. The LTC4012 develops a voltage on this pin to
control cycle-by-cycle peak inductor current. An external
R-C network connected to ITH provides PWM loop compensation. Refer to the Applications Information section
for further details on establishing loop stability. Operating
voltage range is GND to INTVDD.
4012f
8
LTC4012/
LTC4012-1/LTC4012-2
PIN FUNCTIONS
PROG (Pin 13): Charge Current Programming and Monitoring Pin. An external resistance connected between PROG
and GND, along with the current sense and PWM input
resistors, programs the maximum charge current. The
voltage on this pin can also provide a linearized indicator
of charge current. Refer to the Applications Information
section for complete details on current programming and
monitoring. Operating voltage range is GND to INTVDD.
CSN (Pin 14): Charge Current Sense Negative Input.
Place an external input resistor (R IN , Figure 1)
between this pin and the negative side of the charge
current sense resistor. Operating voltage ranges from
(BAT – 50mV) to (BAT + 200mV).
CSP (Pin 15): Charge Current Sense Positive Input.
Place an external input resistor (RIN , Figure 1) between this pin and the positive side of the charge
current sense resistor. Operating voltage ranges from
(BAT – 50mV) to (BAT + 200mV).
BGATE (Pin 16): External Synchronous NFET Gate Control
Output. This output provides gate drive to an external NMOS
power transistor switch used for synchronous rectification
to increase efficiency in the step-down DC/DC converter.
Operating voltage is GND to INTVDD. BGATE should be
left floating if not used.
SW (Pin 18): PWM Switch Node. The LTC4012 uses the
voltage on this pin as the source reference for its topside
NFET (PWM switch) driver. Refer to the Applications Information section for additional PCB layout suggestions
related to this critical circuit node. Operating voltage range
is GND to CLN.
TGATE (Pin 19): External NFET Switch Gate Control Output.
This output provides gate drive to an external NMOS power
transistor switch used in the DC/DC converter. Operating
voltage range is GND to (CLN + 5V).
BOOST (Pin 20): TGATE Driver Supply Input. A bootstrap
capacitor is returned to this pin from a charge network
connected to SW and INTVDD. Refer to the Applications
Information section for complete details on circuit topology and component values. Operating voltage ranges from
(INTVDD – 1V) to (CLN + 5V).
Exposed Pad (Pin 21): Ground. The package paddle
provides a single-point ground for the internal voltage
reference and other critical LTC4012 circuits. It must be
soldered to a suitable PCB copper ground pad for proper
electrical operation and to obtain the specified package
thermal resistance.
INTVDD (Pin 17): Internal 5V Regulator Output. This pin
provides a means of bypassing the internal 5V regulator
used to power the LTC4012 PWM FET drivers. This supply
shuts down when the LTC4012 shuts down. Refer to the
Application Information section for details if additional
power is drawn from this pin by the application circuit.
4012f
9
LTC4012/
LTC4012-1/LTC4012-2
BLOCK DIAGRAM
4
(LTC4012)
DCIN
–
3
INFET
IF
FAULT
DETECTION
+
2
1
8
CLP
INPUT
CURRENT
LIMIT
CLN
ICL
CHRG
C/10
DETECTION
7
9
VFB
+
CSP
15
CA
5
SHUTDOWN
CONTROL
CC
TO
INTERNAL
CIRCUITS
–
EA
ACP
TO INTERNAL
CIRCUITS
CSN
PROG
11
TGATE
CHARGE
10
12
OSCILLATOR
BOOST
FBDIV
13
1.2085V
REFERENCE
ITH
BAT
14
R1
+
–
–
–
6
SHDN
–
+
SHUTDOWN
PWM
LOGIC
TO
INTERNAL
CIRCIUTS
5V
REGULATOR
SW
20
19
18
INTVDD
17
BGATE
GND
(PADDLE)
16
21
4012 BD01
4012f
10
LTC4012/
LTC4012-1/LTC4012-2
BLOCK DIAGRAM
4
(LTC4012-1/LTC4012-2)
DCIN
–
3
INFET
IF
+
2
1
8
FAULT
DETECTION
CLP
INPUT
CURRENT
LIMIT
CLN
ICL
CHRG
C/10
DETECTION
7
VFB
10
9
SHDN
SHUTDOWN
TO
INTERNAL
CIRCUITS
FVS0
–
CC
FVS1
–
Output
Voltage
Select
CSP
15
CA
+
EA
TO INTERNAL
CIRCUITS
CSN
14
R1
+
–
–
–
6
SHUTDOWN
CONTROL
+
PROG
13
1.2085V
REFERENCE
ITH
12
BAT
11
ACP
BOOST
5
20
CHARGE
TGATE
OSCILLATOR
PWM
LOGIC
SW
19
18
TO
INTERNAL
CIRCIUTS
5V
REGULATOR
INTVDD
17
BGATE
GND
(PADDLE)
16
P
4012 BD02
4012f
11
LTC4012/
LTC4012-1/LTC4012-2
OPERATION
Overview
The LTC4012 is a synchronous step-down (buck) current
mode PWM battery charger controller. The maximum
charge current is programmed by the combination of a
charge current sense resistor (RSENSE), matched input
resistors (RIN , Figure 1), and a programming resistor
(RPROG) between the PROG and GND pins. Battery
voltage is programmed with an external resistor divider
between FBDIV and GND (LTC4012) or two digital battery
voltage select pins (LTC4012-1/LTC4012-2). In addition,
the PROG pin provides a linearized voltage output of the
actual charge current.
The LTC4012 family does not have built-in charge
termination and is flexible enough for charging any type
of battery chemistry. These are building block ICs intended
for use with an external circuit, such as a microcontroller,
capable of managing the entire algorithm required for
the specific battery being charged. Each member of the
LTC4012 family features a shutdown input and various state
indicator outputs, allowing easy and direct management by
a wide range of external (digital) charge controllers. Due
to the popularity of rechargeable Lithium-Ion chemistries,
the LTC4012-1 and LTC4012-2 also offer internal precision
resistors that can be digitally selected to produce one of
four preset output voltages for simplified design of those
charger types.
Shutdown
The LTC4012 remains in shutdown until DCIN is greater
than 5.1V and exceeds CLP by 60mV and SHDN is driven
above 1.4V. In shutdown, current drain from the battery
is reduced to the lowest possible level, thereby increasing
standby time. When in shutdown, the ITH pin is pulled to
GND and CHRG, ICL, FET gate drivers and INTVDD output
are all disabled. The charging can be stopped at any time
by forcing SHDN below 300mV.
AC Present Indication
The ACP status output correctly indicates sensed adapter
input voltage during all LTC4012 states. AC present is
indicated (ACP output low) as soon as DCIN exceeds
BAT by at least 500mV. Charging is not enabled until this
condition is first met. After this event, charging is no longer
gated by AC present detection. If battery voltage rises due
to ESR, or DCIN droops due to current load, AC present
may no longer be indicated by the IC if charging was
started with very low input overhead. However, charging
will remain enabled unless DCIN falls below the supply
voltage on CLP.
Input PowerPath Control
The input PFET controller performs many important
functions. First, it monitors DCIN and enables the charger
when this input voltage is higher than the raw CLP system
supply. Next, it controls the gate of an external input
power PFET to maintain a low forward voltage drop when
charging, creating improved efficiency. It also prevents
reverse current flow through this same PFET, providing
a suitable input blocking function. Finally, it helps avoid
synchronous boost operation during invalid operating
conditions by detecting elevated CLP voltage and forcing
the charger off.
If DCIN voltage is less than CLP, then DCIN must rise
60mV higher than CLP to enable the charger and activate
the ideal diode control. At this point, the ACPb status
output also transitions to low impedance to indicate
to the host system that an external adapter is present.
The gate of the input PFET is driven to a voltage sufficient
to regulate a forward drop between DCIN and CLP of about
25mV. If the input voltage differential drops below this
point, the FET is turned off slowly. If the voltage between
DCIN and CLP drops to less than –25mV, the input FET is
turned off in less than 6μs to prevent significant reverse
current from flowing back through the PFET. In this case,
ACPb also switches back to high impedance and the
charger is disabled.
Soft-Start
Exiting the shutdown state enables the charger and releases
the ITH pin. When enabled, switching will not begin until
DCIN exceeds BAT by 500mV and ITH exceeds a threshold
that assures initial current will be positive (about 5% to
25% of the maximum programmed current). To limit inrush
current, soft-start delay is created with the compensation
values used on the ITH pin. Longer soft-start times can be
realized by increasing the filter capacitor on ITH, if reduced
loop bandwidth is acceptable. The actual charge current at
4012f
12
LTC4012/
LTC4012-1/LTC4012-2
OPERATION
LTC4012
WATCHDOG
TIMER
SYSTEM
POWER
2
11
CLP
BAT
CLOCK
OSCILLATOR
S
TGATE
Q
19
L1
PWM
LOGIC
RD
BGATE
+
+
CSP
16
RIN
CA
CC
R1
–
–
CSN
PROG
FROM ICL
VFB
RSENSE
RIN
14
VSENSE
–
ICHRG
13
RPROG
+
–
–
–
EA
+
15
CPROG
+
9
1.2085V
ITH
12
LOOP
COMPENSATION
4012 F01
Figure 1. PWM Circuit Diagram
the end of soft-start will depend on which loop (current,
voltage or adapter limit) is in control of the PWM. If this
current is below that required by the ITH start-up threshold,
the resulting charge current transient duration depends on
loop compensation but is typically less than 100μs.
Bulk Charge
When soft-start is complete, the LTC4012 begins sourcing
the current programmed by the external components
connected to CSP, CSN and PROG. Some batteries may
require a small conditioning trickle current if they are heavily
discharged. As shown in the Applications Information
section, the LT4012 can address this need through a variety
of low current circuit techniques on the PROG pin. Once
a suitable cell voltage has been reached, charge current
can be switched to a higher, bulk charge value.
End of Charge and CHRG Output
As the battery approaches the programmed output voltage,
charge current will begin to decrease. The open-drain
CHRG output can indicate when the current drops to
10% of its programmed full-scale value by turning off
the strong pull-down (open-drain FET) and turning on a
weak 25μA pull-down current. This weak pull-down state
is latched until the part enters shutdown or the sensed
current rises to roughly C/6. C/10 indication will not be set
if charge current has been reduced due to adapter input
current limiting. As the charge current approaches 0A, the
PWM continues to operate in full continuous mode. This
avoids generation of audible noise, allowing bulk ceramic
capacitors to be used in the application.
Charge Current Monitoring
When the LTC4012 is charging, the voltage on the PROG pin
varies in direct proportion to the charge current. Referring
to Figure 1, the nominal PROG voltage is given by
VPROG =
ICHRG • RSENSE • RPROG
+ 11.67μA • RPROG
RIN
Voltage tolerance on PROG is limited by the charge
current accuracy specified in the Electrical Characteristics
table. Refer to the Applications Information section on
programming charge current for additional details.
4012f
13
LTC4012/
LTC4012-1/LTC4012-2
OPERATION
Adapter Input Current Limit
Table 1. LTC4012 Open-Drain Indicator Outputs
The LTC4012 can monitor and limit current from the input
DC supply, which is normally an AC adapter. When the
programmed adapter input current is reached, charge
current is reduced to maintain the desired maximum input
current. The ITH and PROG pins will reflect the reduced
charge current. This limit function avoids overloading the
DC input source, allowing the product to operate at the
same time the battery is charging without complex load
management algorithms. The battery will automatically be
charged at the maximum possible rate that the adapter will
support, given the application’s operating condition. The
LTC4012 can only limit input current by reducing charge
current, and in this case the charger uses nonsynchronous
PWM operation to prevent boosting if the average
charge current falls below about 25% of the maximum
programmed current. Note that the ICL indicator output
becomes active (low) at an adapter input current level just
slightly less than that required for the internal amplifier to
begin to assert control over the PWM loop.
Charger Status Indicator Outputs
The LTC4012 open-drain indicator outputs provide valuable
information about the IC’s operating state and can be
used for a variety of purposes in applications. Table 1
summarizes the state of the three indicator outputs as a
function of LTC4012 operation.
ON
ACP
Off
On
On
On
CHRG
Off
Off
On
25μA
ICL
Off
Off
Off
Off
On
On
On
On
25μA
On
Off
On or
25μA
On or
Off
CHARGER STATE
No DC Input (Shutdown)
Shutdown or Reverse Current
Bulk Charge
Low Current Charge or Initial
DCIN – BAT <500mV
Input Current Limit During Bulk
Charge
Input Current Limit During Low
Current Charge
Indicated Charge with DCIN - BAT
< 300mV. Bulk charge may be less
than programmed value.
PWM Controller
The LTC4012 uses a synchronous step-down architecture
to produce high operating efficiency. The nominal operating
frequency of 550kHz allows use of small filter components.
The following conceptual discussion of basic PWM
operation references Figure 1.
The voltage across the external charge current sense
resistor RSENSE is measured by current amplifier CA. This
instantaneous current (VSENSE/RIN) is fed to the PROG
pin where it is averaged by an external capacitor and
converted to a voltage by the programming resistor RPROG
between PROG and GND. The PROG voltage becomes
the average charge current input signal to error amplifier
EA. EA also receives loop control information from the
battery voltage feedback input VFB and the adapter input
current limit circuit.
tOFF
TOP FET
OFF
ON
BOTTOM FET
OFF
THRESHOLD
SET BY ITH
VOLTAGE
INDUCTOR
CURRENT
4012 F02
Figure 2. PWM Waveforms
4012f
14
LTC4012/
LTC4012-1/LTC4012-2
OPERATION
The ITH output of the error amplifier is a scaled control
voltage for one input of the PWM comparator CC. ITH
sets a peak inductor current threshold, sensed by R1, to
maintain the desired average current through RSENSE. The
current comparator output does this by switching the state
of the RS latch at the appropriate time.
At the beginning of each oscillator cycle, the PWM
clock sets the RS latch and turns on the external
topside NFET (bottom-side synchronous NFET off) to
refresh the current carried by the external inductor L1.
The inductor current and voltage across RSENSE begin
to rise linearly. CA buffers this instantaneous voltage
rise and applies it to CC with gain supplied by R1.
When the voltage across R1 exceeds the peak level set by
the ITH output of EA, the top FET turns off and the bottom
FET turns on. The inductor current then ramps down linearly
until the next rising PWM clock edge. This closes the loop
and sources the correct inductor current to maintain the
desired parameter (charge current, battery voltage, or
input current). To produce a near constant frequency,
the PWM oscillator implements the equation:
tOFF =
CLP – BAT
CLP • 550kHz
Repetitive, closed-loop waveforms for stable PWM
operation appear in Figure 2.
PWM Watchdog Timer
As input and output conditions vary, the LTC4012 may need
to utilize PWM duty cycles approaching 100%. In this case,
operating frequency may be reduced well below 550kHz.
An internal watchdog timer observes the activity on the
TGATE pin. If TGATE is on for more than 40μs, the watchdog
activates and forces the bottom NFET on (top NFET off)
for about 100ns. This avoids a potential source of audible
noise when using ceramic input or output capacitors and
prevents the boost supply capacitor for the top gate driver
from discharging. In low drop out operation, the actual
charge current may not be able to reach the programmed
full-scale value due to the watchdog function.
Overvoltage Protection
The LTC4012 also contains overvoltage detection that
prevents transient battery voltage overshoots of more than
about 6% above the programmed output voltage. When
battery overvoltage is detected, both external MOSFETs are
turned off until the overvoltage condition clears, at which
time a new soft start sequence begins. This is useful for
properly charging battery packs that use an internal switch
to disconnect themselves for performing functions such
as calibration or pulse mode charging.
Reverse Charge Current Protection (Anti-Boost)
Because the LTC4012 always attempts to operate
synchronously in full continuous mode (to avoid audible
noise from ceramic capacitors), reverse average charge
current can occur during some invalid operating conditions.
INFET PowerPath control avoids boosting a lightly loaded
system supply during reverse operation. However, under
heavier system loads, CLP may not boost above DCIN,
even though reverse average current is flowing. In this case
a second circuit monitors indication of reverse average
current on PROG.
If either of these circuits detects boost operation, The
LTC4012 turns off both external MOSFETs until the reverse
current condition clears. At that point, a new soft-start
sequence begins.
4012f
15
LTC4012/
LTC4012-1/LTC4012-2
APPLICATIONS INFORMATION
Programming Charge Current
The formula for charge current is:
ICHRG =
RIN
RSENSE
⎛ 1.2085V
⎞
•⎜
– 11.67μA⎟
⎝ RPROG
⎠
The LTC4012 operates best with 3.01k input resistors,
although other resistors near this value can be used to
accommodate standard sense resistor values. Refer to
the subsequent discussion on inductor selection for other
considerations that come into play when selecting input
resistors RIN.
RSENSE should be chosen according to the following
equation:
RSENSE =
100mV
IMAX
However, some batteries require a low charge current for initial conditioning when they are heavily discharged. The charge current can then be safely
switched to a higher level after conditioning is complete.
Figure 3 illustrates one method of doing this with 2-level
control of the PROG pin resistance. Turning Q1 off reduces
the charge current to IMAX/10 for battery conditioning.
When Q1 is on, the LTC4012 is programmed to allow
full IMAX current for bulk charge. This technique can be
expanded through the use of additional digital control
inputs for an arbitrary number of pre-programmed current values.
For a truly continuous range of maximum charge current
control, pulse width modulation can be used as shown
in Figure 4.
LTC4012
where IMAX is the desired maximum charge current ICHRG.
The 100mV target can be adjusted to some degree to obtain
standard RSENSE values and/or a desired RPROG value, but
target voltages lower than 100mV will cause a proportional
reduction in current regulation accuracy.
The required minimum resistance between PROG and GND
can be determined by applying the suggested expression
for RSENSE while solving the first equation given above for
charge current with ICHRG = IMAX:
PROG
13
The resistance between PROG and GND can simply be
set with a single a resistor, if only maximum charge current needs to be controlled during the desired charging
algorithm.
Q1
2N7002
PRECHARGE
CPROG
4.7nF
R2
53.6k
4012 F03
Figure 3. Programming 2-Level Charge Current
1.2085V • RIN
RPROG(MIN) =
0.1V + 11.67μA • RIN
If RIN is chosen to be 3.01k with a sense voltage of 100mV,
this equation indicates a minimum value for RPROG of
26.9k. Table 6 gives some examples of recommended
charge current programming component values based
on these equations.
R1
26.7k
BULK
CHARGE
LTC4012
PROG
13
RPROG
5V
0V
CPROG
Q1
2N7002
RMAX
511k
4012 F04
Figure 4. Programming PWM Current
4012f
16
LTC4012/
LTC4012-1/LTC4012-2
APPLICATIONS INFORMATION
The value of RPROG controls the maximum value of charge
current which can be programmed (Q1 continuously on).
PWM of the Q1 gate voltage changes the value of RPROG
to produce lower currents. The frequency of this modulation should be higher than a few kHz, and CPROG must be
increased to reduce the ripple caused by switching Q1. In
addition, it may be necessary to increase loop compensation capacitance connected to ITH to maintain stability or
prevent large current overshoot during start-up. Selecting
a higher Q1 PWM frequency (≈10kHz) will reduce the need
to change CPROG or other compensation values.Charge
current will be proportional to the duty cycle of the PWM
input on the gate of Q1.
Programming LTC4012 Output Voltage
BAT
85Ω
TYPICAL
FBDIV
11
10
CZ
R1
LTC4012
+
VFB
9
R2A
GND
(EXPOSED PAD) 21
*OPTIONAL TRIM RESISTOR
R2B*
4012 F05
Figure 5. Programming Output Voltage
Figure 5 shows the external circuit for programming the
charger voltage when using the LTC4012. The voltage is
then governed by the following equation:
VBAT =
1.2085V • (R1+ R2)
R2
, R2 = R2A + R2B
See Table 2 for approximate resistor values for R2.
⎛ V
⎞
R1 = R2 ⎜ BAT – 1⎟ , R2 = R2A + R2B
⎝1.2085V ⎠
Selecting R2 to be less than 50k and the sum of R1 and
R2 at least 200k or above, achieves the lowest possible
error at the VFB sense input. Note that sources of error
such as R1 and R2 tolerance, FBDIV RON or VFB input
impedance are not included in the specifications given in
the Electrical Characteristics. This leads to the possibility that very accurate (0.1%) external resistors might be
required. Actually, the temperature rise of the LTC4012 will
rarely exceed 50°C at the end of charge, because charge
current will have tapered to a low level. This means that
0.25% resistors will normally provide the required level of
overall accuracy. Table 2 gives recommended values for
R1 and R2 for popular lithium-ion battery voltages. For
values of R1 above 200k, addition of capacitor CZ may
improve transient response and loop stability. A value of
10pF is normally adequate.
Table 2. Programming Output Voltage
VBAT
(V)
R1 (0.25%)
(kΩ)
4.1
165
69
–
4.2
167
67.3
200
8.2
162
28
–
R2A (0.25%)
(kΩ)
R2B (1%)*
(Ω)
8.4
169
28.4
–
12.3
301
32.8
–
12.6
294
31.2
–
16.4
284
22.6
–
16.8
271
21
–
20.5
316
19.8
–
21
298
18.2
–
24.6
298
15.4
–
25.2
397
20
–
*To Obtain Desired Accuracy Requires Series Resistors For R2.
4012f
17
LTC4012/
LTC4012-1/LTC4012-2
APPLICATIONS INFORMATION
Programming LTC4012-1/LTC4012-2 Output Voltage
The LTC4012-1/LTC4012-2 feature precision internal battery voltage feedback resistor taps configured for common
lithium-ion voltages. All that is required to program the
desired voltage is proper pin programming of FVS0 and
FVS1 as shown in Table 3.
Table 3. LTC4012-1/LTC4012-2 Output Voltage Programming
VBAT VOLTAGE
LTC4012-1
LTC4012-2
FVS1
FVS0
4.1V
4.2V
GND
GND
8.2V
8.4V
GND
INTVDD
12.3V
12.6V
INTVDD
GND
16.4V
16.8V
INTVDD
INTVDD
Often an AC adapter will include a rated current output
margin of at least +10%. This can allow the adapter current limit value to simply be programmed to the actual
minimum rated adapter output current. Table 4 shows
some common RCL current limit programming values.
A lowpass filter formed by RF (5.1k) and CF (0.1μF) is
required to eliminate switching noise from the LTC4012
PWM and other system components. If input current limiting is not desired, CLN should be shorted to CLP while
CLP remains connected to power.
Table 4. Common RCL Values
ADAPTER
RATING
(A)
RCL VALUE (1%)
(Ω)
RCL POWER
DISSIPATION
(W)
RCL POWER
RATING
(W)
Programming Input Current Limit
1.00
0.100
0.100
0.25
To set the input current limit ILIM, the minimum wall
adapter current rating must be known. To account for the
tolerance of the LTC4012 input current sense circuit, 5%
should be subtracted from the adapter’s minimum rated
output. Refer to Figure 6 and program the input current
limit function with the following equation.
1.25
0.080
0.125
0.25
1.50
0.068
0.150
0.25
1.75
0.056
0.175
0.25
2.00
0.050
0.200
0.25
2.50
0.039
0.244
0.50
3.00
0.033
0.297
0.50
3.50
0.027
0.331
0.50
4.00
0.025
0.400
0.50
RCL =
100mV
ILIM
where ILIM is the desired maximum current draw from
the DC (adapter) input, including adjustments for tolerance,
if any.
FROM DC
POWER
INPUT
RCL
CDC
TO
REMAINDER
OF SYSTEM
RF
5.1k
CF 0.1μF
10k
Figure 7 shows an optional circuit that can influence
the parameters of the input current limit in two ways.
FROM INFET
CLP
CF
0.22μF
RF
2.49k 1%
LTC4012
CLN
2
2
1
1
CLP
CLN
LTC4012
3 INFET
INTVDD 17
4012 F06
Figure 6. Programming Input Current Limit
R2
RCL
1%
TO REMAINDER
OF SYSTEM
Q2
2SC2412
Q1
IMX1
R1
1%
R3 = R1
1%
4012 F07
Figure 7. Adjusting Input Current Limit
4012f
18
LTC4012/
LTC4012-1/LTC4012-2
APPLICATIONS INFORMATION
The first option is to lower the power dissipation of RCL at
the expense of accuracy without changing the input current
limit value. The second is to make the input current limit
value programmable.
The overall accuracy of this circuit needs to be better
than the power source current tolerance or be margined
such that the worse-case error remains under the power
source limits.
The accuracy of the Figure 7 circuit is a function of the
INTVDD, VBE, RCL, RF , R1 and R3 tolerances. To improve
accuracy, the tolerance of RF should be changed from
5.1k, 5% to a 2.49k 1% resistor. RCL and the programming
resistors R1 and R3 should also be 1% tolerance such
that the dominant error is INTVDD (±3%). Bias resistor R2
can be 5%. When choosing NPN transistors, both need
to have good gain (>100) at 10μA levels. Low gain NPNs
will increase programming errors. Q1 must be a matched
NPN pair. Since RF has been reduced in value by half, the
capacitor value of CF should double to 0.22μF to remain
effective at filtering out any noise.
If you wish to reduce RCL power dissipation for a given
current limit, the programming equation becomes:
RCL
⎛ 5 • 2.49k ⎞
100mV – ⎜
⎝ R1 ⎟⎠
=
ILIM
If you wish to make the input current limit programmable,
the equation becomes:
⎛ 5 • 2.49k ⎞
100mV – ⎜
⎝ R1 ⎟⎠
ILIM =
RCL
The equation governing R2 for both applications is based
on the value of R1. R3 should always be equal to R1.
In many notebook applications, there are situations
where two different ILIM values are needed to allow two
different power adapters or power sources to be used.
In such cases, start by setting RLIM for the high power
ILIM configuration and then use Figure 7 to set the lower
ILIM value. To toggle between the two ILIM values, take
the three ground connections shown in Figure 7, combine
them into one common connection and use a small-signal
NFET (2N7002) to open or close that common connection to circuit ground. When the NFET is off, the circuit
is defeated (floating) allowing ILIM to be the maximum
value. When the NFET is on, the circuit will become active
and ILIM will drop to the lower set value.
Monitoring Charge Current
The PROG pin voltage can be used to indicate charge current where 1.2085V indicates full programmed current (1C)
and zero charge current is approximately equal to RPROG •
11.67μA. PROG voltage varies in direct proportion to the
charge current between this zero-current (offset) value and
1.2085V. When monitoring the PROG pin voltage, using a
buffer amplifier as shown in Figure 8 will minimize charge
current errors. The buffer amplifier may be powered from
the INTVDD pin or any supply that is always on when the
charger is on.
INTVDD 17
LTC4012
–
+
PROG 13
<30nA
TO SYSTEM
MONITOR
4012 F08
Figure 8. PROG Voltage Buffer
R2 = 0.875 • R1
4012f
19
LTC4012/
LTC4012-1/LTC4012-2
APPLICATIONS INFORMATION
C/10 CHRG Indicator
The value chosen for RPROG has a strong influence
on charge current monitoring and the accuracy of the
C/10 charge indicator output (CHRG). The LTC4012
uses the voltage on the PROG pin to determine when
charge current has dropped to the C/10 threshold.
The nominal threshold of 400mV produces an accurate low charge current indication of C/10 as long as
RPROG = 26.7k, independent of all other current programming considerations. However, it may sometimes
be necessary to deviate from this value to satisfy other
application design goals.
If RPROG is greater than 26.7k, the actual level at which
low charge current is detected will be less than C/10. The
highest value of RPROG that can be used while reliably
indicating low charge current before reaching final VBAT
is 30.1k. RPROG can safely be set to values higher than
this, but low current indication will be lost.
If RPROG is less than 26.7k, low charge current detection
occurs at a level higher than C/10. More importantly, the
LTC4012 becomes increasingly sensitive to reverse current. The lowest value of RPROG that can be used without
the risk of erroneous boost operation detection at end of
charge is 26.1k. Values of RPROG less than this should not
be used. See the Operation section for more information
about reverse current.
Table 5. Digital Read Back State (IN, Figure 10)
OUT STATE
LTC4012
CHARGER STATE
Hi-Z
1
Off
1
1
C/10 Charge
0
1
Bulk Charge
0
0
Input and Output Capacitors
In addition to typical input supply bypassing (0.1μF) on
DCIN, the relatively high ESR of aluminum electrolytic
capacitors is helpful for reducing ringing when hot pluging
the charger to the AC adapter. Refer to LTC Application
Note 88 for more information.
The input capacitor between system power (drain of top
FET, Figure 1) and GND is required to absorb all input PWM
ripple current, therefore it must have adequate ripple current
rating. Maximum RMS ripple current is typically one-half
of the average battery charge current. Actual capacitance
value is not critical, but using the highest possible voltage
rating on PWM input capacitors will minimize problems.
Consult with the manufacturer before use.
VLOGIC
INTVDD 17
100k
100k
Q1
TP0610T
LTC4012
CHRG
Q3
2N7002
100k
4012 F09
Figure 9. Digital C/10 Indicator
Direct digital monitoring of C/10 indication is possible
with an external application circuit like the one shown in
Figure 9.
By using two different value pull-up resistors, a microprocessor can detect three states from this pin (charging, C/10
and not charging). See Figure 10. When a digital output port
(OUT) from the microprocessor drives one of the resistors
and a second digital input port polls the network, the charge
state can be determined as shown in Table 5.
C/10
CHRG
Q2
2N7002
7
The nominal fractional value of IMAX at which C/10 indication occurs is given by:
400mV – (RPROG • 11.67μA)
IC10
=
IMAX 1.2085V – (RPROG • 11.67μA)
100k
3.3V
LTC4012
CHRG 7
VDD
200k
33k
μP
OUT
IN
4012 F10
Figure 10. Microprocessor Status Interface
4012f
20
LTC4012/
LTC4012-1/LTC4012-2
APPLICATIONS INFORMATION
The output capacitor shown across the battery and ground
must also absorb PWM output ripple current. The general
formula for this capacitor current is:
⎛ V ⎞
0.29 • VBAT • ⎜1 – BAT⎟
⎝ VCLP ⎠
IRMS =
L1 • fPWM
For example, IRMS = 0.22A with:
VBAT = 12.6V
VCLP = 19V
L1 = 10μH
fPWM = 550kHz
High capacity ceramic capacitors (20μF or more) available
from a variety of manufacturers can be used for input/output capacitors. Other alternatives include OS-CON and
POSCAP capacitors from Sanyo.
Low ESR solid tantalum capacitors have high ripple current rating in a relatively small surface mount package,
but exercise caution when using tantalum for input or
output bulk capacitors. High input surge current can be
created when the adapter is hot-plugged to the charger
or when a battery is connected to the charger. Solid tantalum capacitors have a known failure mechanism when
subjected to very high surge currents. Select tantalum
capacitors that have high surge current ratings or have
been surge tested.
EMI considerations usually make it desirable to minimize
ripple current in battery leads. Adding Ferrite beads or
inductors can increase battery impedance at the nominal
550KHz switching frequency. Switching ripple current splits
between the battery and the output capacitor in inverse
relation to capacitor ESR and the battery impedance. If
the ESR of the output capacitor is 0.2Ω and the battery
impedance is raised to 4Ω with a ferrite bead, only 5%
of the current ripple will flow to the battery.
Inductor Selection
Higher switching frequency generally results in
lower efficiency because of MOSFET gate charge
losses, but it allows smaller inductor and capacitor
values to be used. A primary effect of the inductor
value L1 is the amplitude of ripple current created.
The inductor ripple current ΔI L decreases with
higher inductance and PWM operating frequency:
⎛ V ⎞
VBAT • ⎜1 – BAT ⎟
⎝ VCLP ⎠
ΔIL =
L1 • fPWM
Accepting larger values of ΔIL allows the use of low inductance, but results in higher output voltage ripple and
greater core losses. Lower charge currents generally call
for larger inductor values.
The LTC4012 limits maximum instantaneous peak inductor
current during every PWM cycle. To avoid unstable switch
waveforms, the ripple current must satisfy:
⎛150mV
⎞
ΔIL < 2 • ⎜
– IMAX ⎟
⎝RSENSE
⎠
so choose:
L1 >
0.125 • VCLP
⎛ 150mV
⎞
fPWM • ⎜
– IMAX ⎟
⎝ RSENSE
⎠
A reasonable starting point for setting ripple current
is ΔIL = 0.4 • IMAX. The voltage compliance of internal
LTC4012 circuits also imposes limits on ripple current.
Select RIN (in Figure 1) to avoid average current errors in
high ripple designs. The following equation can be used
for guidance:
RSENSE • ΔIL
R
• ΔIL
≤ RIN ≤ SENSE
50μA
20μA
4012f
21
LTC4012/
LTC4012-1/LTC4012-2
APPLICATIONS INFORMATION
RIN should not be less than 2.37k or more than 6.04k. Values of RIN greater than 3.01k may cause some reduction in
programmed current accuracy. Use these equations and
guidelines, as represented in Table 6, to help select the correct inductor value. This table was developed to maintain
maximum ΔIL near 0.6 • IMAX with fPWM at 550kHz and
VBAT = 0.5 • VCLP (the point of maximum ΔIL), assuming that
inductor value could also vary by 25% at IMAX.
TGATE BOOST Supply
Table 6. Minimum Typical Inductor Values
VCLP
L1
IMAX
RSENSE
where QG is the rated gate charge of the top external NFET
with VGS = 4.5V. The maximum average diode current is
then given by:
(Typ)
<10V
≥10μH
1A
100mΩ
RIN
RPROG
3.01k
26.7k
10V to 20V
≥20μH
1A
100mΩ
3.01k
26.7k
>20V
≥28μH
1A
100mΩ
3.01k
26.7k
<10V
≥5.1μH
2A
50mΩ
3.01k
26.7k
10V to 20V
≥10μH
2A
50mΩ
3.01k
26.7k
>20V
≥14μH
2A
50mΩ
3.01k
26.7k
<10V
≥3.4μH
3A
33mΩ
3.01k
26.7k
10V to 20V
≥6.8μH
3A
33mΩ
3.01k
26.7k
>20V
≥9.5μH
3A
33mΩ
3.01k
26.7k
<10V
≥2.5μH
4A
25mΩ
3.01k
26.7k
10V to 20V
≥5.1μH
4A
25mΩ
3.01k
26.7k
>20V
≥7.1μH
4A
25mΩ
3.01k
26.7k
To guarantee that a chosen inductor is optimized in any
given application, use the design equations provided and
perform bench evaluation in the target application, particularly at duty cycles below 20% or above 80% where
PWM frequency can be much less than the nominal value
of 550kHz.
Use the external components shown in Figure 11 to develop a bootstrapped BOOST supply for the TGATE FET
driver. A good set of equations governing selection of the
two capacitors is:
C1 =
20 • QG
, C2 = 20 • C1
4.5V
ID = QG • 665kHz
To improve efficiency by increasing VGS applied to the
top FET, substitute a Schottky diode with low reverse
leakage for D1.
PWM jitter has been observed in some designs operating
at higher VIN/VOUT ratios. This jitter does not substantially
affect DC charge current accuracy. A series resistor with a
value of 5Ω to 20Ω can be inserted between the cathode
of D1 and the BOOST pin to remove this jitter, if present.
A resistor case size of 0603 or larger is recommended to
lower ESL and achieve the best results.
BOOST 20
D1
1N4148
LTC4012
INTVDD 17
C2
2μF
C1
0.1μF
L1
SW 18
4012 F11
TO
RSENSE
Figure 11. TGATE Boost Supply
4012f
22
LTC4012/
LTC4012-1/LTC4012-2
APPLICATIONS INFORMATION
FET Selection
Two external power MOSFETs must be selected for use
with the charger: an N-channel power switch (top FET)
and an N-channel synchronous rectifier (bottom FET).
Peak gate-to-source drive levels are internally set to
about 5V. Consequently, logic-level FETs must be used.
In addition to the fundamental DC current, selection
criteria for these MOSFETs also include channel resistance RDS(ON), total gate charge QG, reverse transfer
capacitance CRSS, maximum rated drain-source voltage
BVDSS and switching characteristics such as td(ON/OFF).
Power dissipation for each external FET is given by:
PD(TOP) =
VBAT • IMAX 2 • (1+ δΔT) RDS(ON)
VCLP
+ k • VCLP 2 • IMAX • CRSS • 665kHz
PD(BOT) =
(VCLP – VBAT) • IMAX 2 • (1+ δΔT)RDS(ON)
VCLP
The synchronous (bottom) FET losses are greatest at high
input voltage or during a short circuit, which forces a low
side duty cycle of nearly 100%. Increasing the size of this
FET lowers its losses but increases power dissipation in the
LTC4012. Using asymmetrical FETs will normally achieve
cost savings while allowing optimum efficiency.
Select FETs with BVDSS that exceeds the maximum VCLP
voltage that will occur. Both FETs are subjected to this level
of stress during operation. Many logic-level MOSFETs are
limited to 30V or less.
The LTC4012 uses an improved adaptive TGATE and
BGATE drive that is insensitive to MOSFET inertial delays,
td(ON/OFF), to avoid overlap conduction losses. Switching
characteristics from power MOSFET data sheets apply
only to a specific test fixture, so there is no substitute for
bench evaluation of external FETs in the target application.
In general, MOSFETs with lower inertial delays will yield
higher efficiency.
Diode Selection
where δ is the temperature dependency of RDS(ON),
ΔT is the temperature rise above the point specified in
the FET data sheet for RDS(ON) and k is a constant inversely related to the internal LTC4012 top gate driver.
The term (1 + δΔT) is generally given for a MOSFET in the
form of a normalized RDS(ON) curve versus temperature,
but δ of 0.005/°C can be used as a suitable approximation for logic-level FETs if other data is not available.
CRSS = ΔQGD /ΔVDS is usually specified in the MOSFET
characteristics. The constant k = 2 can be used in estimating top FET dissipation. The LTC4012 is designed to work
best with external FET switches with a total gate charge
at 5V of 15nC or less.
A Schottky diode in parallel with the bottom FET and/or
top FET in an LTC4012 application clamps SW during the
non-overlap times between conduction of the top and
bottom FET switches. This prevents the body diode of the
MOSFETs from forward biasing and storing charge, which
could reduce efficiency as much as 1%. One or both diodes
can be omitted if the efficiency loss can be tolerated. A 1A
Schottky is generally a good size for 3A chargers due to the
low duty cycle of the non-overlap times. Larger diodes can
actually result in additional efficiency (transition) losses
due to larger junction capacitance.
For VCLP < 20V, high charge current efficiency generally
improves with larger FETs, while for VCLP > 20V, top gate
transition losses increase rapidly to the point that using
a topside NFET with higher RDS(ON) but lower CRSS can
actually provide higher efficiency. If the charger will be
operated with a duty cycle above 85%, overall efficiency
is normally improved by using a larger top FET.
The three separate PWM control loops of the LTC4012
can be compensated by a single set of components attached between the ITH pin and GND. As shown in the
typical LTC4012 application, a 6.04k resistor in series
with a capacitor of at least 0.1μF provides adequate loop
compensation for the majority of applications.
Loop Compensation and Soft-Start
4012f
23
LTC4012/
LTC4012-1/LTC4012-2
APPLICATIONS INFORMATION
The LTC4012 can be soft-started with the compensation
capacitor on the ITH pin. At start-up, ITH will quickly rise
to about 0.25V, then ramp up at a rate set by the compensation capacitor and the 40μA ITH bias current. The
full programmed charge current will be reached when ITH
reaches approximately 2V. With a 0.1μF capacitor, the time
to reach full charge current is usually greater than 1.5ms.
This capacitor can be increased if longer start-up times
are required, but loop bandwidth and dynamic response
will be reduced.
INTVDD Regulator Output
Bypass the INTVDD regulator output to GND with a low
ESR X5R or X7R ceramic capacitor with a value of 0.47μF
or larger. The capacitor used to build the BOOST supply
(C2 in Figure 11) can serve as this bypass. Do not draw
more than 30mA from this regulator for the host system,
governed by IC power dissipation.
Calculating IC Power Dissipation
The user should ensure that the maximum rated junction
temperature is not exceeded under all operating conditions.
The thermal resistance of the LTC4012 package (θJA) is
37°C/W, provided the Exposed Pad is in good thermal
contact with the PCB. The actual thermal resistance in the
application will depend on forced air cooling and other heat
sinking means, especially the amount of copper on the PCB
to which the LTC4012 is attached. The following formula
may be used to estimate the maximum average power dissipation PD (in watts) of the LTC4012, which is dependent
upon the gate charge of the external MOSFETs. This gate
charge, which is a function of both gate and drain voltage
swings, is determined from specifications or graphs in the
manufacturer’s data sheet. For the equation below, find the
gate charge for each transistor assuming 5V gate swing and
a drain voltage swing equal to the maximum VCLP voltage.
Maximum LTC4012 power dissipation under normal operating conditions is then given by:
PD = DCIN(3mA + IDD + 665kHz(QTGATE + QBGATE))
– 5IDD
where:
IDD = Average external INTVDD load current, if any
QTGATE = Gate charge of external top FET in Coulombs
QBGATE = Gate charge of external bottom FET in
Coulombs
PCB Layout Considerations
To prevent magnetic and electrical field radiation and
high frequency resonant problems, proper layout of the
components connected to the LTC4012 is essential. Refer
to Figure 12. For maximum efficiency, the switch node
rise and fall times should be minimized. The following
PCB design priority list will help insure proper topology.
Layout the PCB using this specific order.
1. Input capacitors should be placed as close as possible
to switching FET supply and ground connections with
the shortest copper traces possible. The switching
FETs must be on the same layer of copper as the input
capacitors. Vias should not be used to make these
connections.
2. Place the LTC4012 close to the switching FET gate
terminals, keeping the connecting traces short to
produce clean drive signals. This rule also applies to IC
supply and ground pins that connect to the switching
FET source pins. The IC can be placed on the opposite
side of the PCB from the switching FETs.
SWITCH NODE
L1
RSENSE
VIN
VBAT
CIN
HIGH
FREQUENCY
CIRCULATING
PATH
COUT
D1
+
BAT
ANALOG
GROUND
GND
SWITCHING GROUND
4012 F12
SYSTEM
GROUND
Figure 12. High Speed Switching Path
4012f
24
LTC4012/
LTC4012-1/LTC4012-2
APPLICATIONS INFORMATION
3. Place the inductor input as close as possible to the
switching FETs. Minimize the surface area of the switch
node. Make the trace width the minimum needed to
support the programmed charge current. Use no copper fills or pours. Avoid running the connection on
multiple copper layers in parallel. Minimize capacitance
from the switch node to any other trace or plane.
4. Place the charge current sense resistor immediately
adjacent to the inductor output, and orient it such
that current sense traces to the LTC4012 are not long.
These feedback traces need to be run together as a
single pair with the smallest spacing possible on any
given layer on which they are routed. Locate any filter
component on these traces next to the LTC4012, and
not at the sense resistor location.
5. Place output capacitors adjacent to the sense resisitor
output and ground.
6. Output capacitor ground connections must feed into
the same copper that connects to the input capacitor
ground before connecting back to system ground.
7. Connection of switching ground to system ground,
or any internal ground plane, should be single-point.
If the system has an internal system ground plane,
a good way to do this is to cluster vias into a single
star point to make the connection.
8. Route analog ground as a trace tied back to the LTC4012
GND paddle before connecting to any other ground.
Avoid using the system ground plane. A useful CAD
technique is to make analog ground a separate ground
net and use a 0Ω resistor to connect analog ground
to system ground.
9. A good rule of thumb for via count in a given high
current path is to use 0.5A per via. Be consistent when
applying this rule.
10. If possible, place all the parts listed above on the same
PCB layer.
11. Copper fills or pours are good for all power connections
except as noted above in Rule 3. Copper planes on
multiple layers can also be used in parallel. This helps
with thermal management and lowers trace inductance,
which further improves EMI performance.
12. For best current programming accuracy, provide a
Kelvin connection from RSENSE to CSP and CSN. See
Figure 13 for an example.
13. It is important to minimize parasitic capacitance on
the CSP and CSN pins. The traces connecting these
pins to their respective resistors should be as short
as possible.
DIRECTION OF CHARGING CURRENT
RSENSE
4012 F13
TO CSP
RIN
TO CSN
RIN
Figure 13. Kelvin Sensing of Charge Current
4012f
25
LTC4012/
LTC4012-1/LTC4012-2
TYPICAL APPLICATION
12.6V 4 Amp Charger
FROM
ADAPTER
15V AT 4A
R7
25mΩ
Q5
C1
0.1μF
POWER TO SYSTEM
R1
3k
D1
R
7
4
3
CHRG
DCIN
C4
0.1μF
INFET
CLP
CLN
2
20
19
TGATE
LTC4012
18
SW
5
17
ACP
INTVDD
8
16
ICL
BGATE
6
SHDN
21
GND
15
12
ITH
CSP
C2
0.1μF
R4
6.04k
13
C3
4.7nF
R5
26.7k
BULK
CHARGE
Q1
R6
53.6k
CSN
D5
1
C8
10μF
R15
0Ω*
BOOST
TO/FROM
MCU
R8
5.1k
14
C5
0.1μF
D4
C6
2μF
L1
4.7μH
R9 3.01k
R11
25mΩ
R10 3.01k
11
BAT
10
FBDIV
PROG
VFB
9
R14
100k
D6
18V
ZENER
Q4
TO POWER SYSTEM LOAD
WHEN ADAPTER IS NOT
PRESENT, USE
SCHOTTKY DIODE D5 OR
THE COMBINATION OF R14,
D6 AND Q4
Q2
D3
Q3
OR
R12
294k
R13
31.2k
C10
10pF
C9
10μF
+
12.6V
Li-Ion
BATTERY
4012 TA03
D3: CMDSH-3
D4: MBR230LSFT1
Q1: 2N7002
Q2, Q3: Si7212DN OR SiA914DJ
OR Si4816BDY (OMIT D4)
Q4, Q5: Si7423DN
L1: 1HLP-2525CZER4R7M11
*: SEE TGATE BOOST SUPPLY IN
APPLICATIONS INFORMATION
4012f
26
LTC4012/
LTC4012-1/LTC4012-2
PACKAGE DESCRIPTION
UF Package
20-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1710 Rev A)
0.70 ±0.05
4.50 ± 0.05
3.10 ± 0.05
2.00 REF
2.45 ± 0.05
2.45 ± 0.05
PACKAGE OUTLINE
0.25 ±0.05
0.50 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED
0.75 ± 0.05
4.00 ± 0.10
R = 0.05
TYP
R = 0.115
TYP
19 20
0.40 ± 0.10
PIN 1
TOP MARK
(NOTE 6)
1
2.45 ± 0.10
4.00 ± 0.10
PIN 1 NOTCH
R = 0.20 TYP
OR 0.35 s 45°
CHAMFER
BOTTOM VIEW—EXPOSED PAD
2
2.00 REF
2.45 ± 0.10
(UF20) QFN 01-07 REV A
0.200 REF
0.00 – 0.05
0.25 ± 0.05
0.50 BSC
NOTE:
1. DRAWING IS PROPOSED TO BE MADE A JEDEC PACKAGE OUTLINE MO-220
VARIATION (WGGD-1)—TO BE APPROVED
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
4012f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
27
LTC4012/
LTC4012-1/LTC4012-2
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LTC1760
Smart Battery System Manager
Autonomous Power Management and Battery Charging for Two Smart
Batteries, SMBus Rev 1.1 Compliant
LTC1769
2A Switching Battery Charger
Constant-Current/Constant-Voltage Switching Regulator, Input Current
Limiting Maximizes Charge Current
LTC1960
Dual Battery Charger/Selector with SPI
11-bit V-DAC, 0.8% Voltage Accuracy, 10-Bit I-DAC, 5% Current
Accuracy
LTC4006
Small, High Efficiency, Fixed Voltage, Lithium-Ion
Battery Chargers with Termination
Complete Charger for 3- or 4-Cell Li-Ion Batteries, AC Adapter Current
Limit and Thermistor Sensor, 16-pin SSOP Package
LTC4007
High Efficiency, Programmable Voltage, Lithium-Ion
Battery Charger with Termination
Complete Charger for 3- or 4-Cell Li-Ion Batteries, AC Adapter Current
Limit, Thermistor Sensor and Indicator Outputs
LTC4008/LTC4008-1
High Efficiency, Programmable Voltage/Current Battery Constant-Current/Constant-Voltage Switching Regulator, Resistor
Chargers
Voltage/Current Programming, Thermistor Sensor and Indicator
Outputs, AC Adapter Current Limit (Omitted on 4008-1)
LTC4009/LTC4009-1
LTC4009-2
High Efficiency, Multichemistry Battery Charger
Constant-Current/Constant-Voltage Switching Regulator in a 20-Lead
QFN Package, AC Adapter Current Limit, Indicator Outputs
LTC4010
High Efficiency Standalone Nickel Battery Charger
Complete NiMH/NiCd Charger in a Small 16-Lead Package, ConstantCurrent Switching Regulator
LTC4011
High Efficiency Standalone Nickel Battery Charger
Complete NiMH/NiCd Charger in a Small 20-Lead Package, ConstantCurrent Switching Regulator, PowerPath Control and Indicators
LTC4060
Standalone Linear NiMH/NiCd Fast Charger
Complete NiMH/NiCd Charger in a Small 16-Pin Package, No Sense
Resistor or Blocking Diode Required
LTC4100
Smart Battery Charger Controller
Level 2 Charger Operates with or without MCU Host, SMBus Rev 1.1
Compliant
LTC4110
Battery Backup Manager
Multi-Chemistry and Smart Battery Charge and Discharge Manager. Four
Operating Modes: Battery Backup, Battery Charge, Battery Calibration,
Shutdown. 5mm × 7mm QFN-38 Package
LTC4150
Coulomb Counter/Battery Gas Gauge
High Side Sense of Charge Quantity and Polarity in a 10-Pin MSOP
LTC4411
2.6A Low Loss Idea Diode
No External MOSFET, Automatic Switching Between DC sources, 140mΩ
On Resistance in ThinSOTTM package
LTC4412/LTC4412HV
Low Loss PowerPath Controllers
Very Low Loss Replacement for Power Supply ORing Diodes Using
Minimal External Complements, Operates up to 28V (36V for HV)
LTC4413
Dual 2.6A, 2.5V to 5.5V Ideal Diodes
Low Loss Replacement for ORing Diodes, 100mΩ On Resistance
LTC4414
36V, Low Loss PowerPath Controller for Large PFETs
Low Loss Replacement for ORing Diodes, Operates up to 36V
LTC4416
Dual Low Loss PowerPath Controllers
Low Loss Replacement for ORing Diodes, Operates up to 36V, Drives
Large PFETs, Programmable, Autonomous Switching
ThinSOT is a trademark of Linear Technology Corporation.
4012f
28 Linear Technology Corporation
LT 0509 • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
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FAX: (408) 434-0507 ● www.linear.com
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