LTC4440 High Speed, High Voltage High Side Gate Driver U FEATURES DESCRIPTIO ■ The LTC®4440 is a high frequency high side N-channel MOSFET gate driver that is designed to operate in applications with VIN voltages up to 80V. The LTC4440 can also withstand and continue to function during 100V VIN transients. The powerful driver capability reduces switching losses in MOSFETs with high gate capacitances. The LTC4440’s pull-up has a peak output current of 2.4A and its pull-down has an output impedance of 1.5Ω. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Wide Operating VIN Range: Up to 80V Rugged Architecture Tolerant of 100V VIN Transients Powerful 1.5Ω Driver Pull-Down Powerful 2.4A Peak Current Driver Pull-Up 7ns Fall Time Driving 1000pF Load 10ns Rise Time Driving 1000pF Load Drives Standard Threshold MOSFETs TTL/CMOS Compatible Inputs with Hysteresis Input Thresholds are Independent of Supply Undervoltage Lockout Low Profile (1mm) SOT-23 (ThinSOT)TM and Thermally Enhanced 8-Pin MSOP Packages U APPLICATIO S ■ ■ ■ ■ The LTC4440 features supply independent TTL/CMOS compatible input thresholds with 350mV of hysteresis. The input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 115V above ground. The LTC4440 contains both high side and low side undervoltage lockout circuits that disable the external MOSFET when activated. Telecommunications Power Systems Distributed Power Architectures Server Power Supplies High Density Power Modules The LTC4440 is available in the low profile (1mm) SOT-23 and thermally enhanced 8-lead MSOP packages. , LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation. Protected by U.S. Patents, including 6677210. U TYPICAL APPLICATIO Synchronous Phase-Modulated Full-Bridge Converter VIN 36V TO 72V 100V PEAK TRANSIENT (ABS MAX) VCC 8V TO 15V LTC4440 Driving a 1000pF Capacitive Load LTC4440 INPUT (INP) 2V/DIV VCC BOOST INP TG GND TS OUTPUT (TG – TS) 5V/DIV LTC4440 VCC LTC3722-1 VCC BOOST INP TG GND TS • • 10ns/DIV 4440 F02 4440 TA01 4440f 1 LTC4440 U W W W ABSOLUTE MAXIMUM RATINGS (Note 1) Supply Voltage VCC ....................................................... – 0.3V to 15V BOOST – TS ......................................... – 0.3V to 15V INP Voltage ............................................... – 0.3V to 15V BOOST Voltage (Continuous) ................... – 0.3V to 95V BOOST Voltage (100ms) ........................ – 0.3V to 115V TS Voltage (Continuous) ............................. – 5V to 80V TS Voltage (100ms) ................................... – 5V to 100V Peak Output Current < 1µs (TG) ............................... 4A Driver Output TG (with Respect to TS) ..... – 0.3V to 15V Operating Ambient Temperature Range (Note 2) .............................................. – 40°C to 85°C Junction Temperature (Note 3) ............................ 125°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C W U U PACKAGE/ORDER INFORMATION ORDER PART NUMBER TOP VIEW INP GND VCC GND 1 2 3 4 9 8 7 6 5 TS TG BOOST NC MS8E PACKAGE 8-LEAD PLASTIC MSOP TJMAX = 125°C, θJA = 40°C/W (NOTE 4) EXPOSED PAD IS GND (PIN 9) MUST BE SOLDERED TO PCB ORDER PART NUMBER TOP VIEW LTC4440EMS8E VCC 1 5 TG INP 3 4 TS MS8E PART MARKING LTF9 LTC4440ES6 6 BOOST GND 2 S6 PART MARKING S6 PACKAGE 6-LEAD PLASTIC SOT-23 TJMAX = 125°C, θJA = 230°C/W LTZY Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = VBOOST = 12V, VTS = GND = 0V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS 250 25 400 80 µA µA 6.5 6.2 300 7.3 7.0 V V mV 110 86 180 170 µA µA 7.4 6.9 500 7.95 7.60 V V mV Main Supply (VCC) IVCC UVLO DC Supply Current Normal Operation UVLO Undervoltage Lockout Threshold INP = 0V VCC < UVLO Threshold (Falling) – 0.1V VCC Rising VCC Falling Hysteresis ● ● 5.7 5.4 Bootstrapped Supply (BOOST – TS) IBOOST UVLOHS DC Supply Current Normal Operation UVLO Undervoltage Lockout Threshold INP = 0V VBOOST – VTS < UVLOHS(FALLING) – 0.1V, VCC = INP = 5V VBOOST – VTS Rising VBOOST – VTS Falling Hysteresis ● ● 6.75 6.25 Input Signal (INP) VIH High Input Threshold INP Ramping High ● 1.3 1.6 2 V VIL Low Input Threshold INP Ramping Low ● 0.85 1.25 1.6 V VIH – VIL Input Voltage Hysteresis 0.350 IINP Input Pin Bias Current ±0.01 V ±2 µA 4440f 2 LTC4440 ELECTRICAL CHARACTERISTICS The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = VBOOST = 12V, VTS = GND = 0V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS 220 mV 2.2 Ω Output Gate Driver (TG) VOH High Output Voltage ITG = –10mA, VOH = VBOOST – VTG VOL Low Output Voltage ITG = 100mA 0.7 IPU Peak Pull-Up Current ● RDS Output Pull-Down Resistance ● ● 150 1.7 V 2.4 1.5 A Switching Timing tr Output Rise Time 10% – 90%, CL = 1nF 10% – 90%, CL = 10nF 10 100 ns ns tf Output Fall Time 10% – 90%, CL = 1nF 10% – 90%, CL = 10nF 7 70 ns ns tPLH Output Low-High Propagation Delay ● 30 65 ns tPHL Output High-Low Propagation Delay ● 28 65 ns Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: The LTC4440 is guaranteed to meet performance specifications from 0°C to 70°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formula: TJ = TA + (PD • θJA°C/W) Note 4: Failure to solder the exposed back side of the MS8E package to the PC board will result in a thermal resistance much higher than 40°C/W. U W TYPICAL PERFOR A CE CHARACTERISTICS VCC Supply Quiescent Current vs Voltage TA = 25°C 500 INP = 0V 170 TA = 25°C 450 QUIESCENT CURRENT (µA) 250 QUIESCENT CURRENT (µA) Output Low Voltage (VOL) vs Supply Voltage INP = VCC 200 150 100 50 OUTPUT (TG – TS) VOLTAGE (mV) 300 BOOST – TS Supply Quiescent Current vs Voltage 400 350 INP = VCC 300 250 200 150 INP = 0V 100 ITG = 100mA TA = 25°C 165 160 155 150 145 50 0 140 0 0 5 10 VCC SUPPLY VOLTAGE (V) 15 4440 G01 0 10 5 BOOST – TS SUPPLY VOLTAGE (V) 15 4440 G02 8 12 14 11 13 9 10 BOOST – TS SUPPLY VOLTAGE (V) 15 4440 G03 4440f 3 LTC4440 U W TYPICAL PERFOR A CE CHARACTERISTICS Output High Voltage (VOH) vs Supply Voltage TA = 25°C 14 INPUT THRESHOLD (V) ITG = –1mA 12 ITG = –10mA 11 ITG = –100mA 10 9 380 TA = 25°C 1.8 13 VCC Supply Current at TTL Input Levels VCC SUPPLY QUIESCENT CURRENT (µA) 2.0 15 OUTPUT VOLTAGE (TG – TS) (V) Input Thresholds (INP) vs Supply Voltage VIH (INPUT HIGH THRESHOLD) 1.6 1.4 VIL (INPUT LOW THRESHOLD) 1.2 1.0 8 0.8 7 9 10 12 13 14 11 BOOST – TS SUPPLY VOLTAGE (V) 8 7 15 9 11 13 VCC SUPPLY VOLTAGE (V) 300 280 INP = 0.8V 260 240 220 200 15 12 10 VCC SUPPLY VOLTAGE (V) 8 VCC Undervoltage Lockout Thresholds vs Temperature 6.55 INP = 0V 6.50 VCC SUPPLY VOLTAGE (V) 250 CURRENT (µA) INP = 12V 200 150 100 50 4440 G07 RISING THRESHOLD 6.45 6.40 6.35 6.30 6.25 FALLING THRESHOLD 6.20 0 –60 –30 0 30 60 90 6.15 –60 120 –30 TEMPERATURE (°C) 0 30 60 90 Boost Supply (BOOST – TS) Undervoltage Lockout Thresholds vs Temperature 2.0 350 300 250 200 150 INP = 0V 100 7.5 RISING THRESHOLD 1.8 7.4 INPUT THRESHOLD (V) BOOST – TS SUPPLY VOLTAGE (V) 400 CURRENT (µA) Input Threshold vs Temperature INP = 12V 450 7.3 7.2 7.1 7.0 FALLING THRESHOLD 6.9 1.6 VIH (VCC = 12V) VIH (VCC = 15V) VIH (VCC = 8V) VIL (VCC = 12V) VIL (VCC = 15V) 1.4 1.2 VIL (VCC = 8V) 1.0 6.8 50 0 –60 4440 G09 7.6 500 120 TEMPERATURE (°C) 4440 G08 Boost Supply Current vs Temperature 14 4440 G06 300 INPUT (INP) 5V/DIV 250ns/DIV INP = 2V 320 VCC Supply Current (VCC = 12V) vs Temperature 2MHz Operation VCC = 12V 340 4440 G05 4440 G04 OUTPUT (TG) 5V/DIV TA = 25°C 360 –30 0 30 60 90 120 TEMPERATURE (°C) 6.7 –60 –30 0 30 60 90 120 –30 0 30 60 90 120 TEMPERATURE (°C) TEMPERATURE (°C) 4440 G10 0.8 –60 4440 G11 4440 G12 4440f 4 LTC4440 U W TYPICAL PERFOR A CE CHARACTERISTICS Peak Driver (TG) Pull-Up Current vs Temperature 500 3.0 480 2.9 460 2.8 PEAK CURRENT (A) HYSTERESIS (mV) Input Threshold Hysteresis vs Temperature 440 420 400 VIH-VIL (VCC = 12V) 380 VIH-VIL (VCC = 15V) 360 2.6 2.5 2.4 2.2 320 2.1 0 –30 30 60 90 BOOST – TS = 12V 2.3 340 VIH-VIL (VCC = 8V) 300 –60 BOOST – TS = 15V 2.7 2.0 –60 120 –30 TEMPERATURE (°C) 0 30 60 90 120 TEMPERATURE (°C) 4440 G13 4440 G14 Output Driver Pull-Down Resistance vs Temperature Propagation Delay vs Temperature (VCC = BOOST = 12V) 45 3.0 40 BOOST – TS = 12V 2.0 RDS (Ω) PROPAGATION DELAY (ns) 2.5 BOOST – TS = 8V 1.5 BOOST – TS = 15V 1.0 35 tPLH 30 tPHL 25 20 15 10 0.5 5 0 –60 –30 0 30 60 90 120 0 –60 –30 0 30 60 90 120 TEMPERATURE (°C) TEMPERATURE (°C) 4440 G15 4440 G16 U U U PI FU CTIO S SOT-23 Package VCC (Pin 1): Chip Supply. This pin powers the internal low side circuitry. A low ESR ceramic bypass capacitor should be tied between this pin and the GND pin (Pin 2). GND (Pin 2): Chip Ground. INP (Pin 3): Input Signal. TTL/CMOS compatible input referenced to GND (Pin 2). TS (Pin 4): Top (High Side) Source Connection. TG (Pin 5): High Current Gate Driver Output (Top Gate). This pin swings between TS and BOOST. BOOST (Pin 6): High Side Bootstrapped Supply. An external capacitor should be tied between this pin and TS (Pin 4). Normally, a bootstrap diode is connected between VCC (Pin 1) and this pin. Voltage swing at this pin is from VCC – VD to VIN + VCC – VD, where VD is the forward voltage drop of the bootstrap diode. 4440f 5 LTC4440 U U U PI FU CTIO S Exposed Pad MS8E Package INP (Pin 1): Input Signal. TTL/CMOS compatible input referenced to GND (Pin 2). GND (Pins 2, 4): Chip Ground. VCC (Pin 3): Chip Supply. This pin powers the internal low side circuitry. A low ESR ceramic bypass capacitor should be tied between this pin and the GND pin (Pin 2). NC (Pin 5): No Connect. No connection required. For convenience, this pin may be tied to Pin 6 (BOOST) on the application board. BOOST (Pin 6): High Side Bootstrapped Supply. An external capacitor should be tied between this pin and TS (Pin 8). Normally, a bootstrap diode is connected between VCC (Pin 3) and this pin. Voltage swing at this pin is from VCC – VD to VIN + VCC – VD, where VD is the forward voltage drop of the bootstrap diode. TG (Pin 7): High Current Gate Driver Output (Top Gate). This pin swings between TS and BOOST. TS (Pin 8): Top (High Side) Source Connection. Exposed Pad (Pin 9): Ground. Must be electrically connected to Pins 2 and 4 and soldered to PCB ground for optimum thermal performance. W BLOCK DIAGRA BOOST VCC UNDERVOLTAGE LOCKOUT 8V TO 15V HIGH SIDE UNDERVOLTAGE LOCKOUT VIN UP TO 80V, TRANSIENT UP TO 100V TG TS GND BOOST INP LEVEL SHIFTER GND 4440 BD TS WU W TI I G DIAGRA INPUT RISE/FALL TIME < 10ns INPUT (INP) VIH VIL 90% 10% OUTPUT (TG) tr tPLH tf tPHL 4440 TD 4440f 6 LTC4440 U W U U APPLICATIO S I FOR ATIO Overview The LTC4440 receives a ground-referenced, low voltage digital input signal to drive a high side N-channel power MOSFET whose drain can float up to 100V above ground, eliminating the need for a transformer between the low voltage control signal and the high side gate driver. The LTC4440 normally operates in applications with input supply voltages (VIN) up to 80V, but is able to withstand and continue to function during 100V, 100ms transients on the input supply. The powerful output driver of the LTC4440 reduces the switching losses of the power MOSFET, which increase with transition time. The LTC4440 is capable of driving a 1nF load with 10ns rise and 7ns fall times using a bootstrapped supply voltage VBOOST–TS of 12V. Input Stage The LTC4440 employs TTL/CMOS compatible input thresholds that allow a low voltage digital signal to drive standard power MOSFETs. The LTC4440 contains an internal voltage regulator that biases the input buffer, allowing the input thresholds (VIH = 1.6V, VIL = 1.25V) to be independent of variations in VCC. The 350mV hysteresis between VIH and VIL eliminates false triggering due to noise during switching transitions. However, care should be taken to keep this pin from any noise pickup, especially in high frequency, high voltage applications. The LTC4440 input buffer has a high input impedance and draws negligible input current, simplifying the drive circuitry required for the input. VIN UP TO 100V BOOST LTC4440 CGD Q1 TG POWER MOSFET N1 CGS LOAD INDUCTOR 4440 F03 TS V– Figure 3. Capacitance Seen by TG During Switching the power MOSFET’s gate is pulled low (gate shorted to source through N1) by the LTC4440, its source (TS) is pulled low by its load (e.g., an inductor or resistor). The slew rate of the source/gate voltage causes current to flow back to the MOSFET’s gate through the gate-to-drain capacitance (CGD). If the MOSFET driver does not have sufficient sink current capability (low output impedance), the current through the power MOSFET’s CGD can momentarily pull the gate high, turning the MOSFET back on. A similar scenario exists when the LTC4440 is used to drive a low side MOSFET. When the low side power MOSFET’s gate is pulled low by the LTC4440, its drain voltage is pulled high by its load (e.g., inductor or resistor). The slew rate of the drain voltage causes current to flow back to the MOSFET’s gate through its gate-to-drain capacitance. If the MOSFET driver does not have sufficient sink current capability (low output impedance), the current through the power MOSFET’s CGD can momentarily pull the gate high, turning the MOSFET back on. Output Stage A simplified version of the LTC4440’s output stage is shown in Figure 3 . The pull-down device is an N-channel MOSFET (N1) and the pull-up device is an NPN bipolar junction transistor (Q1). The output swings from the lower rail (TS) to within an NPN VBE (~ 0.7V) of the positive rail (BOOST). This large voltage swing is important in driving external power MOSFETs, whose RDS(ON) is inversely proportional to its gate overdrive voltage (VGS – VTH). The LTC4440’s peak pull-up (Q1) current is 2.4A while the pull-down (N1) resistance is 1.5Ω. The low impedance of N1 is required to discharge the power MOSFET’s gate capacitance during high-to-low signal transitions. When Rise/Fall Time Since the power MOSFET generally accounts for the majority of the power loss in a converter, it is important to quickly turn it on or off, thereby minimizing the transition time in its linear region. The LTC4440 can drive a 1nF load with a 10ns rise time and 7ns fall time. The LTC4440’s rise and fall times are determined by the peak current capabilities of Q1 and N1. The predriver that drives Q1 and N1 uses a nonoverlapping transition scheme to minimize cross-conduction currents. N1 is fully turned off before Q1 is turned on and vice versa. 4440f 7 LTC4440 U W U U APPLICATIO S I FOR ATIO Power Dissipation Undervoltage Lockout (UVLO) To ensure proper operation and long-term reliability, the LTC4440 must not operate beyond its maximum temperature rating. Package junction temperature can be calculated by: TJ = TA + PD (θJA) where: TJ = Junction Temperature TA = Ambient Temperature PD = Power Dissipation θJA = Junction-to-Ambient Thermal Resistance The LTC4440 contains both low side and high side undervoltage lockout detectors that monitor VCC and the bootstrapped supply VBOOST–TS. When VCC falls below 6.2V, the internal buffer is disabled and the output pin OUT is pulled down to TS. When VBOOST – TS falls below 6.9V, OUT is pulled down to TS. When both supplies are undervoltage, OUT is pulled low to TS and the chip enters a low current mode, drawing approximately 25µA from VCC and 86µA from BOOST. Power dissipation consists of standby and switching power losses: PD = PSTDBY + PAC where: PSTDBY = Standby Power Losses PAC = AC Switching Losses The LTC4440 consumes very little current during standby. The DC power loss at VCC = 12V and VBOOST–TS = 12V is only (250µA + 110µA)(12V) = 4.32mW. AC switching losses are made up of the output capacitive load losses and the transition state losses. The capacitive load losses are primarily due to the large AC currents needed to charge and discharge the load capacitance during switching. Load losses for the output driver driving a pure capacitive load COUT would be: Load Capacitive Power = (COUT)(f)(VBOOST–TS)2 The power MOSFET’s gate capacitance seen by the driver output varies with its VGS voltage level during switching. A power MOSFET’s capacitive load power dissipation can be calculated using its gate charge, QG. The QG value corresponding to the MOSFET’s VGS value (VCC in this case) can be readily obtained from the manufacturer’s QG vs VGS curves: Load Capacitive Power (MOS) = (VBOOST–TS)(QG)(f) Transition state power losses are due to both AC currents required to charge and discharge the driver’s internal nodal capacitances and cross-conduction currents in the internal gates. 8 Bypassing and Grounding The LTC4440 requires proper bypassing on the VCC and VBOOST–TS supplies due to its high speed switching (nanoseconds) and large AC currents (Amperes). Careless component placement and PCB trace routing may cause excessive ringing and under/overshoot. To obtain the optimum performance from the LTC4440: A. Mount the bypass capacitors as close as possible between the VCC and GND pins and the BOOST and TS pins. The leads should be shortened as much as possible to reduce lead inductance. B. Use a low inductance, low impedance ground plane to reduce any ground drop and stray capacitance. Remember that the LTC4440 switches >2A peak currents and any significant ground drop will degrade signal integrity. C. Plan the power/ground routing carefully. Know where the large load switching current is coming from and going to. Maintain separate ground return paths for the input pin and the output power stage. D. Keep the copper trace between the driver output pin and the load short and wide. E. When using the MS8E package, be sure to solder the exposed pad on the back side of the LTC4440 package to the board. Correctly soldered to a 2500mm2 doublesided 1oz copper board, the LTC4440 has a thermal resistance of approximately 40°C/W. Failure to make good thermal contact between the exposed back side and the copper board will result in thermal resistances far greater than 40°C/W. 4440f 1 VIN 1µF 220pF 150Ω 20k 1/4W 12V 4 2 UVLO VREF VIN SBUS 0.47µF 11 Q3 Q1 12V 9 ADLY PDLY B 8 0.22µF 220pF 8 180pF 5.1k 1 DPRG NC SYNC 220pF 14 2 5VREF 150k 12 18 10 4.99k 20k 1 21 20 2 C 33k 10k 13 5 6 23 D 17 10Ω D 15 C3 68µF 20V Q4 Q2 12V 8 0.22µF 68nF 8.25k 22 MMBT3904 CT SPRG RLEB FB GND PGND 24 19 ISNS 10Ω 4 16 + 7 D11 3 330pF 4 SS COMP CS 5VREF 750Ω D4 2.2nF 6 8 2 4 2 4 D8 D7 330Ω 5 C4 2.2nF 250V 8 MOC207 5 9 100k 2 1 6 CSE+ VH 5 D12 5.1V 1 11 CSF– 12 8 3 4 2.7k 470Ω 1/4W 6 5 GND-F GND-S 14 15 VOUT 16 PVCC 22nF 10k 330pF 7 TIMER –VOUT 2.49k 9.53k 13 4440 TA03 8 10 + MF MF2 VCC 909Ω D1 820pF 200V 15Ω 1W D6 Si7852DP ×4 C1, C2 180µF 16V ×2 VH GND PGND GND2 PGND2 LTC3901EGN V+ LT1431CS8 COLL REF 0.047µF 2 1.10k 4.87k 1/4W ME ME2 CSF+ 3 L3 0.85µH Si7852DP ×4 909Ω CSE– 1.10k 4.87k 1/4W SYNC 220pF 100Ω 1 6 7 8 10 11 7 8 10 11 T1 5(105µH):1:1 T2 5:5(105µH):1:1 D5 T3 1(1.5mH):0.5 1 4 L4 1mH 0.1µF 200k ISNS 22Ω D9 3.3V 100Ω Si7852DP ×2 Si7852DP ×2 51Ω 2W 0.47µF 0.47µF 100V 100V 12V OUTA OUTB OUTC OUTD OUTF OUTE A B 1.1k 0.02Ω 1.5W LTC3722EGN-1 0.02Ω 1.5W Si7852DP ×2 L2 150nH Si7852DP ×2 VCC 6 INP BOOST LTC4440EMS8E 7 TG GND GND TS C VCC 6 INP BOOST LTC4440EMS8E 7 TG GND GND TS D3 3 D2 12V 3 12V • 30.1k A 1µF 100V ×4 0.47µF, 100V TDK C3216X7R2A474M 1µF, 100V TDK C4532X7R2A105M C1,C2: SANYO 16SP180M C3: AVX TPSE686M020R0150 C4: MURATA DE2E3KH222MB3B D1, D4-D6: MURS120T3 D2, D3, D7, D8: BAS21 D9: MMBZ5226B D10: MMBZ5240B D11: BAT54 D12: MMBZ231B L1: SUMIDA CDEP105-1R3MC-50 L2: PULSE PA0651 L3: PA1294.910 L4: COILCRAFT DO1608C-105 Q1, Q2: ZETEX FMMT619 Q3, Q4: ZETEX FMMT718 T1, T2: PULSE PA0526 T3: PULSE PA0785 1µF 100V • 182k –VIN 36V TO 72V 51Ω 2W • VIN • • • • • • • VIN • L1 1.3µH LTC3722/LTC4440 420W 36V-72VIN to 12V/35A Isolated Full-Bridge Supply 1 –VOUT 1µF 39.2k –VOUT 1µF VOUT 0.47µF 100V 13k 1/2W VOUT 1µF D10 10V MMBT3904 100Ω –VOUT 12V/35A VOUT –VOUT VOUT 1k LTC4440 TYPICAL APPLICATIO S 4440f 9 U VIN 93 94 95 96 97 –VIN 6 8 464k 1.5nF 30k 1/4W 4 1µF 15 5 1.5k 13 7 8 UVLO FB GND CT 10k 270pF 33k 16 12 14 68nF 0.47µF 1 VREF 9 150k SPRG RLEB SS DPRG SDRB DRVB ISNS DRVA LTC3723EGN-1 R2 0.03Ω 1.5W 2 B R1 0.03Ω 1.5W Si7852DP 4 4 A A 2 6 VCC 20 0.1µF D3 B 243k 330pF 11 22nF 6 6 1 T2 1(1.5mH):0.5 1 4 D6 D5 Si7852DP 5 3 4 2 8 5 C4 2.2nF 250V 8 MOC207 665Ω 5 9 CSF+ 22nF D8 10V 11 1k 6.19k 1/4W SYNC 220pF 100Ω 100k 2 1 866Ω 1k 1/4W 12 14 15 6 CSE+ L6 1.25µH CSE– 5 8 3 4 1k 100Ω 1/4W 6 5 GND-F GND-S 8 10 VOUT 4440 TA05 –VOUT 2.49k 9.53k 13 2 + VE VF 3 16 C1, C2 47µF 16V ×2 22nF 10k 1 –VOUT 1µF 4.7µF MMBT3904 D7 10V 1k 1µF, 100V TDK C3225X7R2A105M C1,C2: SANYO 16TQC47M C3: AVX TPSE686M020R0150 C4: MURATA GHM3045X7R222K-GC D2: DIODES INC. ES1B D3-D6: BAS21 D7, D8: MMBZ5240B L4: COILCRAFT DO1608C-105 L5: COILCRAFT DO1813P-561HC L6: PULSE PA1294.132 OR PANASONIC ETQP1H1R0BFA R1, R2: IRC LRC2512-R03G T1: PULSE PA0805.004 T2: PULSE PA0785 470pF 7 TIMER PVCC VOUT –VOUT 12V/20A VOUT 42.2k 100Ω –VOUT 1µF VOUT 470pF 100V 10Ω 1W ME ME2 VCC 866Ω GND PGND GND2 PGND2 LTC3901EGN MF MF2 V+ LT1431CS8 1 COLL REF 0.1µF CSF – 1k 6.19k 1/4W VE 1µF 100V D2 VF VF Si7370DP ×2 7 VE Si7370DP ×2 11 9 T1 4T:6T(65µHMIN):6T:2T:2T Si7852DP 0.1µF L4 1mH ISNS 22Ω 10 + 12V 750Ω COMP CS SDRA 3 C3 68µF 20V 0.1µF VCC 6 3 A INP BOOST LTC4440ES6 5 4.7Ω Si7852DP TG GND TS 1 12V • 66.5k D4 • 200Ω 1/4W 12V VIN 2 18 56VIN 48VIN 42VIN B 1 12V VCC 6 3 INP BOOST LTC4440ES6 5 4.7Ω TG GND TS 1µF 100V ×3 VIN 10 12 16 14 LOAD CURRENT (A) 1µF 100V L5 0.56µH • • 42V TO 56V EFFICIENCY (%) • • • 10 • LTC3723-1 240W 42-56VIN to 12V/20A Isolated 1/4Brick (2.3" × 1.45") LTC4440 TYPICAL APPLICATIO S 4440f U LTC4440 U PACKAGE DESCRIPTION MS8E Package 8-Lead Plastic MSOP (Reference LTC DWG # 05-08-1662) 5.23 (.206) MIN 3.00 ± 0.102 (.118 ± .004) (NOTE 3) 0.889 ± 0.127 (.035 ± .005) 2.794 ± 0.102 (.110 ± .004) 2.083 ± 0.102 3.20 – 3.45 (.082 ± .004) (.126 – .136) 0.254 (.010) 0.65 (.0256) BSC 0.42 ± 0.038 (.0165 ± .0015) TYP 8 7 6 5 1 2.06 ± 0.102 (.081 ± .004) 1.83 ± 0.102 (.072 ± .004) 3.00 ± 0.102 (.118 ± .004) (NOTE 4) 4.90 ± 0.152 (.193 ± .006) DETAIL “A” 0.52 (.0205) REF 0° – 6° TYP GAUGE PLANE 1 0.53 ± 0.152 (.021 ± .006) RECOMMENDED SOLDER PAD LAYOUT 2 3 4 1.10 (.043) MAX DETAIL “A” 8 BOTTOM VIEW OF EXPOSED PAD OPTION 0.86 (.034) REF 0.18 (.007) SEATING NOTE: PLANE 1. DIMENSIONS IN MILLIMETER/(INCH) 2. DRAWING NOT TO SCALE 3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX 0.22 – 0.38 (.009 – .015) TYP 0.127 ± 0.076 (.005 ± .003) 0.65 (.0256) BSC MSOP (MS8E) 0603 S6 Package 6-Lead Plastic SOT-23 (Reference LTC DWG # 05-08-1636) 0.62 MAX 2.90 BSC (NOTE 4) 0.95 REF 1.22 REF 3.85 MAX 2.62 REF 1.4 MIN 2.80 BSC 1.50 – 1.75 (NOTE 4) PIN ONE ID RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR 0.30 – 0.45 6 PLCS (NOTE 3) 0.95 BSC 0.80 – 0.90 0.20 BSC 0.01 – 0.10 1.00 MAX DATUM ‘A’ 0.30 – 0.50 REF NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 0.09 – 0.20 (NOTE 3) 1.90 BSC S6 TSOT-23 0302 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193 4440f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LTC4440 U TYPICAL APPLICATIO LTC3723-2/LTC4440/LTC3901 240W 42V-56VIN to Unregulated 12V Half-Bridge Converter L1 0.56µH 1µF 100V D1 1µF 100V 1 A VCC 6 INP BOOST LTC4440ES6 5 TG GND TS 3 2 Si7852DP ×2 1µF 100V T2 70(980µH):1 4 CS+ 1 3 1µF 100V 8 Si7852DP ×2 12V MMBT3904 10k • • 6 11 4 DRVA DRVB SDRB VCC LTC3723EGN-2 215k 15 SDRA UVLO COMP DPRG VREF RAMP CT SPRG GND CS SS 12 1µF 1µF 30.1k 4.7k 1/4W 62k 330pF 1 9 8 150pF 16 7 T3 1(1.5mH):0.5 1 4 2 3 0.1µF 22Ω 4.7k 1/4W 3k 12 10k 14 15 CSF – MF MF2 6 3k 5 CSE+ 2 LTC3901EGN SYNC 8 4 0.47µF 2N7002 4.7k 12V MMBZ5242B 16 PVCC 10 13 220pF 1k 3 CSE– ME ME2 VCC GND PGND GND2 PGND2 33.2k 100Ω VOUT MMBT3904 1 1k TIMER 1µF 7 10V MMBZ5240B 1µF 330pF 4440 TA04 10 14 13 470pF –VOUT CS+ 0.22µF B 10k 0.47µF 9 100Ω 5 8 11 FB CSF+ • 5 VE T1 5:4:4:2:2 D3 A 6 C2 180µF 16V Si7370DP ×2 VF 11V 120Ω 100pF 1 L3 1mH 68µF + 20Ω 1W –VOUT C1 2.2nF 250V D2 • 15k 1/4W + C3 VOUT 1500pF 100V VF Si7370DP ×2 5 4 0.22µF 12V VIN 11 1µF 7 3 B VOUT L2 0.22µH • 11V –VIN 7 9 • 48VIN VE 2 1µF 100V • 1µF 100V VIN • • VIN D4 D5 7.5Ω 7.5Ω 1µF, 100V TDK C4532X7R2A105M C1: MURATA DE2E3KH222MB3B C2: SANYO 16SP180M C3: AVX TPSE686M020R0150 D1-D3: BAS21 D4, D5: MMBD914 L1: COILCRAFT DO1813P-561HC L2: SUMIDA CDEP105-0R2NC-50 L3: COILCRAFT DO1608C-105 T1: PULSE PA0801.005 T2: PULSE P8207 T3: PULSE PA0785 –VOUT RELATED PARTS PART NUMBER LTC1155 DESCRIPTION Dual Micropower High/Low Side Drivers with Internal Charge Pump LT®1161 Quad Protected High Side MOSFET Driver LTC1163 Triple 1.8V to 6V High Side MOSFET Driver LT1339 High Power Synchronous DC/DC Controller LTC1535 Isolated RS485 Transceiver LTC1693 Family High Speed Dual MOSFET Drivers LT3010/LT3010-5 50mA, 3V to 80V Low Dropout Micropower Regulators LT3430 High Voltage, 3A, 200kHz Step-Down Switching Regulator LTC3722-1/ LTC3722-2 LTC3723-1/ LTC3723-2 LT3781/LTC1698 36V to 72V Input Isolated DC/DC Converter Chip Set LT3804 Secondary Side Dual Output Controller with Opto Driver LTC3900 LTC3901 Synchronous Rectifier Driver for Forward Converters Secondary Side Synchronous Driver for Push-Pull and Full-Bridge Converters 6A MOSFET Driver LTC4441 Synchronous Dual Mode Phase Modulated Full-Bridge Controllers Synchronous Push-Pull PWM Controllers COMMENTS 4.5V to 18V Supply Range 8V to 48V Supply Range, tON = 200µs, tOFF = 28µs 1.8V to 6V Supply Range, tON = 95µs, tOFF = 45µs Current Mode Operation Up to 60V, Dual N-Channel Synchronous Drive 2500VRMS of Isolation Between Line Transceiver and Logic Level Interface 1.5A Peak Output Current, 4.5V ≤ VIN ≤ 13.2V Low Quiescent Current (30µA), Stable with Small (1µF) Ceramic Capacitor Input Voltages Up to 60V, Internal 0.1Ω Power Switch, Current Mode Architecture, 16-Pin Exposed Pad TSSOP Package Adaptive Zero Voltage Switching, High Output Power Levels (Up to Kilowatts) Current Mode or Voltage Mode Push-Pull Controllers Synchronous Rectification; Overcurrent, Overvoltage, UVLO Protection; Power Good Output Signal; Voltage Margining; Compact Solution Regulates Two Secondary Outputs, Optocoupler Feedback Divider and Second Output Synchronous Driver Controller Programmable Time Out, Reverse Inductor Current Sense Programmable Time Out, Reverse Inductor Current Sense Adjustable Gate Drive from 5V to 8V, 5V ≤ VIN ≤ 28V 4440f 12 Linear Technology Corporation LT/TP 1004 1K • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2003