LTC1693 High Speed Single/Dual N-Channel MOSFET Drivers U FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC®1693 family drives power N-channel MOSFETs at high speed. The 1.5A peak output current reduces switching losses in MOSFETs with high gate capacitance. Dual MOSFET Drivers in SO-8 Package or Single MOSFET Driver in MSOP Package 1GΩ Electrical Isolation Between the Dual Drivers Permits High/Low Side Gate Drive 1.5A Peak Output Current 16ns Rise/Fall Times at VCC = 12V, CL = 1nF Wide VCC Range: 4.5V to 13.2V CMOS Compatible Inputs with Hysteresis, Input Thresholds are Independent of VCC Driver Input Can Be Driven Above VCC Undervoltage Lockout Thermal Shutdown The LTC1693-1 contains two noninverting drivers while the LTC1693-2 contains one noninverting and one inverting driver. These dual drivers are electrically isolated and independent. The LTC1693-3 is a single driver with an output polarity select pin. All MOSFET drivers offer VCC independent CMOS input thresholds with 1.2V of typical hysteresis. They can levelshift the input logic signal up or down to the rail-to-rail VCC drive for the external MOSFET. U APPLICATIO S ■ ■ ■ ■ Power Supplies High/Low Side Drivers Motor/Relay Control Line Drivers Charge Pumps The LTC1693-1 and LTC1693-2 come in an 8-lead SO package. The LTC1693-3 comes in an 8-lead MSOP package. , LTC and LT are registered trademarks of Linear Technology Corporation. U ■ The LTC1693 contains an undervoltage lockout circuit and a thermal shutdown circuit that disable the external N-channel MOSFET gate drive when activated. TYPICAL APPLICATION VIN 48VDC ±10% + Two Transistor Forward Converter C2 1.5µF 63V C1 330µF 63V R1 0.068Ω RETURN Q1 MTD20NO6HD 12V C5 1µF D2 MURS120 12VIN BOOST C9 1800pF 5% NPO 1 2 R5 2.49k 1% 4 3 5 6 7 10 C14 3300pF R9 12k C12 100pF LT1339 TG 20 19 SYNC 5VREF TS SL/ADJ SENSE + CT SENSE – IAVG BG PHASE SS RUN/SHDN VC VFB VREF SGND C15 0.1µF 8 PGND 15 18 11 BAT54 C8 1µF C4 0.1µF + Q2 Si4420 ×2 C6 470µF 6.3V ×8 R3 249Ω 1% R4 1.24k 1% RETURN 16 13 Q3 MTD20NO6HD Q4 Si4420 VOUT 1.5V/15A C3 4700pF 25V R2 5.1Ω R6 100Ω 12 R7 100Ω 14 • D3 MURS120 C7 1µF L1 1.5µH T1 13:2 • LTC1693CS8-2 1 8 VCC1 IN1 2 7 GND1 OUT1 3 6 VCC2 IN2 4 5 GND2 OUT2 17 C11 0.1µF C10 0.1µF D1 MURS120 R8 301k 1% 9 R10 10k 1% D4 MBRO530T1 LTC1693CS8-2 1 8 VCC1 IN1 2 7 GND1 OUT1 3 6 IN2 VCC2 4 5 GND2 OUT2 C13 1µF C1: SANYO 63MV330GX C2: WIMA SMD4036/1.5/63/20/TR C6: KEMET T510X477M006AS (×8) L1: GOWANDA 50-318 T1: GOWANDA 50-319 1693 TA01 1 LTC1693 U W W W ABSOLUTE MAXIMUM RATINGS (Note 1) Supply Voltage (VCC) .............................................. 14V Inputs (IN, PHASE) ................................... – 0.3V to 14V Driver Output ................................. – 0.3V to VCC + 0.3V GND1 to GND2 (Note 5) ..................................... ±100V Junction Temperature .......................................... 150°C Operating Ambient Temperature Range C-Grade ................................................... 0°C to 70°C I-Grade ................................................–40°C to 85°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C W U U PACKAGE/ORDER INFORMATION TOP VIEW TOP VIEW IN1 1 8 VCC1 IN1 1 8 VCC1 GND1 2 7 OUT1 GND1 2 7 OUT1 IN2 3 6 VCC2 IN2 3 6 VCC2 GND2 4 5 OUT2 GND2 4 5 OUT2 S8 PACKAGE 8-LEAD PLASTIC SO S8 PACKAGE 8-LEAD PLASTIC SO TJMAX = 150°C, θJA = 135°C/ W TJMAX = 150°C, θJA = 135°C/ W TOP VIEW IN NC PHASE GND 8 7 6 5 1 2 3 4 VCC OUT NC NC MS8 PACKAGE 8-LEAD PLASTIC MSOP TJMAX = 150°C, θJA = 200°C/ W ORDER PART NUMBER S8 PART MARKING ORDER PART NUMBER S8 PART MARKING ORDER PART NUMBER MS8 PART MARKING LTC1693-1CS8 LTC1693-1IS8 16931 16931I LTC1693-2CS8 LTC1693-2IS8 16932 16932I LTC1693-3CMS8 LTEB Consult factory for Industrial and Military grade parts. ELECTRICAL CHARACTERISTICS The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN VCC Supply Voltage Range ICC Quiescent Current LTC1693-1, LTC1693-2, IN1 = IN2 = 0V (Note 2) LTC1693-3, PHASE = 12V, IN = 0V ● ● ICC(SW) Switching Supply Current LTC1693-1, LTC1693-2, COUT = 4.7nF, fIN = 100kHz LTC1693-3, COUT = 4.7nF, fIN = 100kHz ● ● TYP MAX UNITS 13.2 V 720 360 1100 550 µA µA 14.4 7.2 20 10 mA mA 4.5 400 200 Input VIH High Input Threshold ● 2.2 2.6 3.1 V VIL Low Input Threshold ● 1.1 1.4 1.7 V IIN Input Pin Bias Current ±0.01 ±10 µA VPH PHASE Pin High Input Threshold (Note 3) ● 4.5 5.5 6.5 V IPH PHASE Pin Pull-Up Current PHASE = 0V (Note 3) ● 10 20 45 µA VOH High Output Voltage IOUT = –10mA ● 11.92 11.97 VOL Low Output Voltage IOUT = 10mA ● RONL Output Pull-Down Resistance 2.85 Ω RONH Output Pull-Up Resistance 3.00 Ω IPKL Output Low Peak Current 1.70 A IPKH Output High Peak Current 1.40 A ● Output 2 30 V 75 mV LTC1693 ELECTRICAL CHARACTERISTICS The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Switching Timing (Note 4) tRISE Output Rise Time COUT = 1nF COUT = 4.7nF ● ● 17.5 48.0 35 85 ns ns tFALL Output Fall Time COUT = 1nF COUT = 4.7nF ● ● 16.5 42.0 35 75 ns ns tPLH Output Low-High Propagation Delay COUT = 1nF COUT = 4.7nF ● ● 38.0 40.0 70 75 ns ns tPHL Output High-Low Propagation Delay COUT = 1nF COUT = 4.7nF ● ● 32 35 70 75 ns ns Driver Isolation RISO GND1-GND2 Isolation Resistance LTC1693-1, LTC1693-2 GND1-to-GND2 Voltage = 75V ● Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Supply current is the total current for both drivers. Note 3: Only the LTC1693-3 has a PHASE pin. 0.075 1 GΩ Note 4: All AC timing specificatons are guaranteed by design and are not production tested. Note 5: Only applies to the LTC1693-1 and LTC1693-2. U W TYPICAL PERFOR A CE CHARACTERISTICS IN Threshold Voltage vs Temperature 2.75 3.00 2.50 INPUT THRESHOLD VOLTAGE (V) INPUT THRESHOLD VOLTAGE (V) TA = 25°C VIH 2.25 2.00 1.75 1.50 VIL 1.25 1.00 5 6 7 9 8 VCC (V) 10 11 12 1693 G01 IN Threshold Hysteresis vs Temperature 1.4 VCC = 12V INPUT THRESHOLD HYSTERESIS (V) IN Threshold Voltage vs VCC 2.75 VIH 2.50 2.25 2.00 1.75 1.50 VIL 1.25 1.00 – 50 –25 75 50 25 TEMPERATURE (°C) 0 100 125 1693 G02 VCC = 12V 1.3 1.2 VIH-VIL 1.1 1.0 0.9 0.8 – 50 – 25 0 50 25 75 TEMPERATURE (°C) 100 125 1693 G03 3 LTC1693 U W TYPICAL PERFOR A CE CHARACTERISTICS PHASE Threshold Voltage vs VCC Rise/Fall Time vs VCC 24 TA = 25°C 5 VPH(H) Rise/Fall Time vs Temperature 3 2 tRISE 17 tRISE 18 tFALL 16 tFALL 16 15 14 13 14 12 1 12 0 10 5 6 7 9 8 VCC (V) 10 11 12 11 5 6 7 9 8 VCC (V) 10 11 1693 G04 10 –50 –25 12 Rise/Fall Time vs COUT TA = 25°C VCC = 12V 100 fIN = 100kHz 45 TIME (ns) 40 40 45 40 tPHL 35 30 25 1000 5 6 7 8 9 VCC (V) 10 1693 G07 200 OUTPUT SATURATION VOLTAGE (mV) 40 TIME (ns) 12 tPLH tPHL 50 25 75 0 TEMPERATURE (°C) 100 125 1693 G09 Output Saturation Voltage vs Temperature TA = 25°C VCC = 12V fIN = 100kHz 30 11 1693 G08 Propagation Delay vs COUT 50 20 – 50 – 25 10 10000 Quiescent Current vs VCC (Single Driver) 350 VCC = 12V TA = 25°C VIN = 0V VOH (50mA) wrt VCC QUIESCENT CURRENT (µA) 100 COUT (pF) 30 15 0 10 tPHL 25 tFALL 1 tPLH 35 20 tRISE 20 VCC = 12V COUT = 1nF fIN = 100kHz tPLH TIME (ns) 80 125 Propagation Delay vs Temperature 50 TA = 25°C COUT = 1nF fIN = 100kHz 50 100 1693 G06 Propagation Delay vs VCC 55 60 50 25 0 75 TEMPERATURE (°C) 1693 G05 120 TIME (ns) 18 TIME (ns) VPH(L) VCC = 12V COUT = 1nF fIN = 100kHz 19 20 4 150 VOL (50mA) 100 50 VOH (10mA) wrt VCC 300 250 200 150 VOL (10mA) 20 1 10 100 COUT (pF) 1000 10000 1693 G10 4 20 TA = 25°C COUT = 1nF fIN = 100kHz 22 TIME (ns) PHASE THRESHOLD VOLTAGE (V) 6 0 – 55 – 35 –15 100 5 25 45 65 85 105 125 TEMPERATURE (°C) 1693 G11 5 6 7 9 8 VCC (V) 10 11 12 1693 G12 LTC1693 U W TYPICAL PERFOR A CE CHARACTERISTICS Switching Supply Current vs COUT (Single Driver) VOL vs Output Current 300 TA = 25°C VCC = 12V 90 VCC = 12V TA = 25°C 250 80 70 200 60 VOL (mV) SWITCHING SUPPLY CURRENT (mA) 100 50 40 30 750kHz 20 10 200kHz 100kHz 25kHz VOL 150 100 50 500kHz 0 0 1 10 100 COUT (pF) 1000 10000 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 G13 1693 G14 VOH vs Output Current 300 Thermal Derating Curves 1400 TA = 25°C VCC = 12V TJ = 125°C 1200 POWER DISSIPATION (mW) 350 VOH (mV) 250 VOH 200 150 100 50 1000 LTC1693-1/LTC1693-2 800 600 LTC1693-3 400 200 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 G15 0 – 55 – 35 –15 5 25 45 65 85 105 125 AMBIENT TEMPERATURE (°C) 1693 G16 5 LTC1693 U U U PIN FUNCTIONS SO-8 Package (LTC1693-1, LTC1693-2) MSOP Package (LTC1693-3) IN1, IN2 (Pins 1, 3): Driver Inputs. The inputs have VCC independent thresholds with 1.2V typical hysteresis to improve noise immunity. IN (Pin 1): Driver Input. The input has VCC independent thresholds with hysteresis to improve noise immunity. GND1, GND2 (Pins 2, 4): Driver Grounds. Connect to a low impedance ground. The VCC bypass capacitor should connect directly to this pin. The source of the external MOSFET should also connect directly to the ground pin. This minimizes the AC current path and improves signal integrity. The ground pins should not be tied together if isolation is required between the two drivers of the LTC1693-1 and the LTC1693-2. PHASE (Pin 3): Output Polarity Select. Connect this pin to VCC or leave it floating for noninverting operation. Ground this pin for inverting operation. The typical PHASE pin input current when pulled low is 20µA. OUT 1, OUT2 (Pins 5, 7): Driver Outputs. The LTC16931’s outputs are in phase with their respective inputs (IN1, IN2). The LTC1693-2’s topside driver output (OUT1) is in phase with its input (IN1) and the bottom side driver’s output (OUT2) is opposite in phase with respect to its input pin (IN2). NC (Pins 2, 5, 6): No Connect. GND (Pin 4): Driver Ground. Connect to a low impedance ground. The VCC bypass capacitor should connect directly to this pin. The source of the external MOSFET should also connect directly to the ground pin. This minimizes the AC current path and improves signal integrity. OUT (Pin 7): Driver Output. VCC (Pin 8): Power Supply Input. VCC1, VCC2 (Pins 6, 8): Power Supply Inputs. W BLOCK DIAGRA SM 8 IN1 GND1 IN2 GND2 1 7 2 6 3 4 5 IN1 GND1 VCC2 OUT2 LTC1693-1 DUAL NONINVERTING DRIVER 6 8 VCC1 OUT1 IN2 GND2 1 7 2 6 3 4 5 8 VCC1 OUT1 IN GND VCC2 OUT2 LTC1693-2 TOPSIDE NONINVERTING DRIVER AND BOTTOM SIDE INVERTING DRIVER PHASE NC 1 7 4 3 6 2 5 LTC1693-3 SINGLE DRIVER WITH POLARITY SELECT VCC OUT NC NC 1693 BD LTC1693 TEST CIRCUITS 1/2 LTC1693-1 OR 1/2 LTC1693-2 87V VCC1 4.7µF 12VP-P 0.1µF 1 4.7nF IN1 OUT1 8 7 75V A 1/2 LTC1693-1 OR 1/2 LTC1693-2 2 GND1 VCC2 12V 4.7µF + – 0.1µF 75V 3 IN2 OUT2 6 5 4.7nF 4 1693 TC03 GND2 1693 TC02 75V High Side Switching Test LTC1693-1, LTC1693-2 Ground Isolation Test VCC = 12V 4.7µF 0.1µF IN OUT 5V 1nF OR 4.7nF tRISE/FALL < 10ns 1693 TC01 AC Parameter Measurements WU W TI I G DIAGRA INPUT RISE/FALL TIME < 10ns INPUT VIH VIL NONINVERTING OUTPUT 90% 10% tr tPLH INVERTING OUTPUT tf tPHL 90% 10% tf tPHL tr tPLH 1693 TD 7 LTC1693 U W U U APPLICATIONS INFORMATION Overview The LTC1693 single and dual drivers allow 3V- or 5V-based digital circuits to drive power MOSFETs at high speeds. A power MOSFET’s gate-charge loss increases with switching frequency and transition time. The LTC1693 is capable of driving a 1nF load with a 16ns rise and fall time using a VCC of 12V. This eliminates the need for higher voltage supplies, such as 18V, to reduce the gate charge losses. The LTC1693’s 360µA quiescent current is an order of magnitude lower than most other drivers/buffers. This improves system efficiency in both standby and switching operation. Since a power MOSFET generally accounts for the majority of power loss in a converter, addition of the LT1693 to a high power converter design greatly improves efficiency, using very little board space. The LTC1693-1 and LTC1693-2 are dual drivers that are electrically isolated. Each driver has independent operation from the other. Drivers may be used in different parts of a system, such as a circuit requiring a floating driver and the second driver being powered with respect to ground. Input Stage The LTC1693 employs 3V CMOS compatible input thresholds that allow a low voltage digital signal to drive standard power MOSFETs. The LTC1693 incorporates a 4V internal regulator to bias the input buffer. This allows the 3V CMOS compatible input thresholds (VIH = 2.6V, VIL = 1.4V) to be independent of variations in VCC. The 1.2V hysteresis between VIH and VIL eliminates false triggering due to ground noise during switching transitions. The LTC1693’s input buffer has a high input impedance and draws less than 10µA during standby. Output Stage The LTC1693’s output stage is essentially a CMOS inverter, as shown by the P- and N-channel MOSFETs in Figure 1 (P1 and N1). The CMOS inverter swings rail-torail, giving maximum voltage drive to the load. This large voltage swing is important in driving external power MOSFETs, whose RDS(ON) is inversely proportional to its gate overdrive voltage (VGS – VT). 8 V+ VCC LEQ (LOAD INDUCTOR OR STRAY LEAD INDUCTANCE) VDRAIN LTC1693 P1 CGD OUT POWER MOSFET N1 CGS GND 1693 F01 Figure 1. Capacitance Seen by OUT During Switching The LTC1693’s output peak currents are 1.4A (P1) and 1.7A (N1) respectively. The N-channel MOSFET (N1) has higher current drive capability so it can discharge the power MOSFET’s gate capacitance during high-to-low signal transitions. When the power MOSFET’s gate is pulled low by the LTC1693, its drain voltage is pulled high by its load (e.g., a resistor or inductor). The slew rate of the drain voltage causes current to flow back to the MOSFETs gate through its gate-to-drain capacitance. If the MOSFET driver does not have sufficient sink current capability (low output impedance), the current through the power MOSFET’s Miller capacitance (CGD) can momentarily pull the gate high, turning the MOSFET back on. Rise/Fall Time Since the power MOSFET generally accounts for the majority of power lost in a converter, it’s important to quickly turn it either fully “on” or “off” thereby minimizing the transition time in its linear region. The LTC1693 has rise and fall times on the order of 16ns, delivering about 1.4A to 1.7A of peak current to a 1nF load with a VCC of only 12V. The LTC1693’s rise and fall times are determined by the peak current capabilities of P1 and N1. The predriver, shown in Figure 1 driving P1 and N1, uses an adaptive method to minimize cross-conduction currents. This is done with a 6ns nonoverlapping transition time. N1 is fully turned off before P1 is turned-on and vice-versa using this 6ns buffer time. This minimizes any cross-conduction currents while N1 and P1 are switching on and off yet is short enough to not prolong their rise and fall times. LTC1693 U U W U APPLICATIONS INFORMATION Driver Electrical Isolation The LTC1693-1 and LTC1693-2 incorporate two individual drivers in a single package that can be separately connected to GND and VCC connections. Figure 2 shows a circuit with an LTC1693-2, its top driver left floating while the bottom Power Dissipation VIN LTC1693-2 VCC1 IN1 OUT1 driver is powered with respect to ground. Similarly Figure 3 shows a simplified circuit of a LTC1693-1 which is driving MOSFETs with different ground potentials. Because there is 1GΩ of isolation between these drivers in a single package, ground current on the secondary side will not recirculate to the primary side of the circuit. To ensure proper operation and long term reliability, the LTC1693 must not operate beyond its maximum temperature rating. Package junction temperature can be calculated by: N1 GND1 TJ = TA + PD(θJA) • where: VCC2 IN2 V+ OUT2 N2 GND2 1693 F02 Figure 2. Simplified LTC1693-2 Floating Driver Application TJ = Junction Temperature TA = Ambient Temperature PD = Power Dissipation θJA = Junction-to-Ambient Thermal Resistance Power dissipation consists of standby and switching power losses: PD = PSTDBY + PAC where: OTHER PRIMARY-SIDE CIRCUITS OTHER SECONDARY-SIDE CIRCUITS • • The LTC1693 consumes very little current during standby. This DC power loss per driver at VCC = 12V is only (360µA)(12V) = 4.32mW. LTC1693-1 VCC1 IN1 V+ OUT1 AC switching losses are made up of the output capacitive load losses and the transition state losses. The capactive load losses are primarily due to the large AC currents needed to charge and discharge the load capacitance during switching. Load losses for the CMOS driver driving a pure capacitive load COUT will be: GND1 VCC2 IN2 PSTDBY = Standby Power Losses PAC = AC Switching Losses V+ OUT2 Load Capacitive Power (COUT) = (COUT)(f)(VCC)2 GND2 1693 F03 Figure 3. Simplified LTC1693-1 Application with Different Ground Potentials The power MOSFET’s gate capacitance seen by the driver output varies with its VGS voltage level during switching. A power MOSFET’s capacitive load power dissipation can be calculated by its gate charge factor, QG. The QG value 9 LTC1693 U W U U APPLICATIONS INFORMATION corresponding to MOSFET’s VGS value (VCC in this case) can be readily obtained from the manafacturer’s QGS vs VGS curves: VCC LTC1693 Load Capacitive Power (MOS) = (VCC)(QG)(f) Transition state power losses are due to both AC currents required to charge and discharge the drivers’ internal nodal capacitances and cross-conduction currents in the internal gates. INPUT SIGNAL GOING BEL0W GND PIN POTENTIAL R1 D1 IN PARASITIC SUBSTRATE DIODE 1693 F04 UVLO and Thermal Shutdown The LTC1693’s UVLO detector disables the input buffer and pulls the output pin to ground if VCC < 4V. The output remains off from VCC = 1V to VCC = 4V. This ensures that during start-up or improper supply voltage values, the LTC1693 will keep the output power MOSFET off. The LTC1693 also has a thermal detector that similarly disables the input buffer and grounds the output pin if junction temperature exceeds 145°C. The thermal shutdown circuit has 20°C of hysteresis. This thermal limit helps to shut down the system should a fault condition occur. Input Voltage Range LTC1693’s input pin is a high impedance node and essentially draws neligible input current. This simplifies the input drive circuitry required for the input. The LTC1693 typically has 1.2V of hysteresis between its low and high input thresholds. This increases the driver’s robustness against any ground bounce noises. However, care should still be taken to keep this pin from any noise pickup, especially in high frequency switching applications. In applications where the input signal swings below the GND pin potential, the input pin voltage must be clamped to prevent the LTC1693’s parastic substrate diode from turning on. This can be accomplished by connecting a series current limiting resistor R1 and a shunting Schottky diode D1 to the input pin (Figure 4). R1 ranges from 100Ω to 470Ω while D1 can be a BAT54 or 1N5818/9. GND Figure 4 Bypassing and Grounding LTC1693 requires proper VCC bypassing and grounding due to its high speed switching (ns) and large AC currents (A). Careless component placement and PCB trace routing may cause excessive ringing and under/overshoot. To obtain the optimum performance from the LTC1693: A. Mount the bypass capacitors as close as possible to the VCC and GND pins. The leads should be shortened as much as possible to reduce lead inductance. It is recommended to have a 0.1µF ceramic in parallel with a low ESR 4.7µF bypass capacitor. For high voltage switching in an inductive environment, ensure that the bypass capacitors’ VMAX ratings are high enough to prevent breakdown. This is especially important for floating driver applications. B. Use a low inductance, low impedance ground plane to reduce any ground drop and stray capacitance. Remember that the LTC1693 switches 1.5A peak currents and any significant ground drop will degrade signal integrity. C. Plan the ground routing carefully. Know where the large load switching current is coming from and going to. Maintain separate ground return paths for the input pin and output pin. Terminate these two ground traces only at the GND pin of the driver (STAR network). D. Keep the copper trace between the driver output pin and the load short and wide. 10 GND VIN 5V + + C7 0.1µF 25V +V1 CIN2 330µF 6.3V C12 1nF 5% C4 0.1µF C11 120pF 5% NPO R4 43k CIN1 330µF 6.3V 4 3 2 1 8 7 6 5 4 3 2 1 SGND VIN VFB SENSE + C1 100pF VCC2 OUT2 GND2 GND1 IN2 VCC1 OUT1 IN1 R1 10k U1 LTC1693-2 SENSE – ITH SHDN LBIN BINH CT LBOUT PGND BDRIVE PINV PWR VIN TDRIVE U2 LTC1266A 5 6 7 8 9 10 11 12 13 14 15 16 C3 0.1µF C5 1nF R2 100Ω D3 MMSD4148 + VIN D2 MMSD4148 R5 100Ω R3 0.010Ω 5 10 C2 0.33µF Q1 IRL2505 RX1 24Ω 1/2W C6 1nF 50V C8 0.1µF 16V 2 • 3 T1A 9.2µH 9T 4× #26 •8 T1D 33T #30 9 6 T1C 33T #30 + 7 •6 D5 MUR120 T1B 123µH 33T #30 • • 1 + CA1 220µF 35V 7 4 3 2 CB2 120µF 63V Q3 MTD2N20 U3 LT1006S8 8 RF1 2.49k 1% CB1 120µF 63V + + T1E NOT USED D4 MBR1100 – 4 R6 1.2k RF2 47.5k 1% R7 1k 5% C9 10nF 50V 1 8 7 U4 LT1006S8 R10 32k 1% – 24V 6 CA2 220µF 35V C10 0.1µF 50V + 3 2 C12 0.1µF X7R • R8 10k 1% L1 100µH + C13 10nF 100V R9 4.99k CA3 220µF 35V CB3 39µF 100V RF4 46.4k 0.1% RF3 24.3k 0.1% T1: PHILIPS EFD25-3C85 FIRST WIND T1B, T1C AND T1D TRIFILAR SECOND WIND T1A QUADFILAR AIR GAP: 0.88mm OR 2 × 0.44mm SPACERS 4 + 1 D6 12V 500mW + – SLIC Power Supply 1693 TA03 – 70V 200mA C11 0.1µF 100V – 24V 240mA GND LTC1693 TYPICAL APPLICATIONS 11 U LTC1693 U TYPICAL APPLICATIONS Negative-to-Positive Synchronous Boost Converter + D2 MBRO530 VS L2** 1µH VOUT 3.3V 6A C3 330µF 6.3V ×2 + + C1 330µF 6.3V ×5 C2 330µF 6.3V ×5 R1 0.015Ω 1W C12 4700pF L1* 4.8µH R2 0.015Ω 1W Q2 Si4420 ×2 5 C14 10µF 16V 3 D4 MBRO530 D3 MBRO530 D5 MBRO530 7 R19 1k C17 100pF 9 + 1 U2A LTC1693-2 2 C16 10µF 16V C15 0.1µF 2 3 + C6 10µF 16V 4 5 6 C5 0.1µF 8 SENSE – SENSE – TDRV PWR VIN BDRV PINV U1 LTC1266 BINH VIN SHDN CT C7 390pF C9 0.015µF C8 1500pF LBI LBO ITH R17 6.81k 1 16 13 3.3V R8 30.1k R10 100k R18 6.81k R11 100k Q5 2N3906 Q4 2N3906 11 14 R7 1k 12 15 VS Q3 2N7002 SGND PGND VFB 7 *PANASONIC ETQPAF4R8HA **COILCRAFT DO3316P-102 10 C10 220pF R9 13k R12 4.75k R16 3.6k Q6 2N3904 C4 1000pF R6 10Ω R13 1.30k 1693 TA03 12 + U2B LTC1693-2 4 8 Q1 Si4420 ×2 R4 2.2Ω C13 0.1µF 6 C11 4700pF R3 100Ω VIN –5V D1 MBRS130 R5 2.2Ω R14 51Ω R15 1.2k + R4 390Ω C6 100pF NPO RCL 6.8k 4 3 2 1 WINDING # TURNS AWG 28 T1A 3 28 T1B 1 28 T1C 2 28 3 T1D 28 9 T1E 28 32 T1F T1 TRANSFORMER COILTRONICS VP4-TYPE D10 1N4148 CC2 100pF 5% C2 0.1µF GND2 5 6 7 8 + V1 C5 1nF R11 12.1k R5 100Ω T1 WINDING ORDER: 1. T1A, T1B, T1C, T1D QUAD-FILAR, WOUND FIRST, AFTER T1A, T1B, T1C AND T1D WOUND, REMOVE 2 TURNS FROM T1B AND 1 TURN FROM T1C 2. T1E WOUND ON TOP, SPREAD EVENLY 3. LAYER OF INSULATION 4. T1F WOUND ON TOP, SPREAD EVENLY VCC2 OUT2 IN2 OUT1 VCC1 U1 LTC1693-1 GND1 IN1 10 9 SENSE + VFB SHDN 11 12 13 14 15 16 RX1 120Ω 1/2W CX1 220pF 50V 8 5 T1E 9T #28 4 T1D 3T #28 9 C4 1nF 50V DO4 MBRM140 1693 TA04 C11 0.1µF 100V + R7 4.7Ω CO4 220µF 25V + D9 5.6V 0.5W R6 10Ω CO2A 330µF 6.3V 5V + + CO4B 0.1µF 16V + CO2B 330µF 6.3V CO1A 330µF 6.3V LO1 1µH Q3 2N2222 CO3A 330µF 6.3V C9 1nF R8 1k + LO3 2.2µH LO2 2.2µH D6 3.3V 500mW D7 BAV21 RF1 42.2k 1% Q1 2N5401 QO2 Si9803 D8 BAV21 R9 1M DO3 MBRM140 QO1 Si9803 R2 22Ω T1 CORE: COILTRONICS VP4-TYPE, AIR GAP, 0.7mm or 2 × 0.35mm SPACERS PRIMARY INDUCTANCE OF T1F = 50µH ALTERNATIVE CORES: SIEMENS EFD20, N67 MATERIAL, TDK PC40-EPC17 R3 0.1Ω Q2 IRF620 T1B 1T #28 3 T1C 2T #28 10 11 • CC1 10nF SENSE – ITH CT SGND LBIN BINH VIN LBOUT PGND BDRIVE PINV PWR VIN TDRIVE T1F 7 32T #28 50µH 6 • 8 7 6 5 4 3 2 1 U2 LTC1266A 2 T1A 3T 12 #28 1 • C11 120pF 5% NPO C7 0.1µF 25V CIN2 220µF 50V D2 MMSD4148 • + V1 CIN1 220µF 50V + C1 220µF 16V D3 MMSD4148 • – VIN –24V TO – 35V GND + + V1 • R1 47k D1 6.2V 500mW Q4 FZT694B C3 0.1µF 100V Multiple Output Telecom Power Supply + CO3B 330µF 6.3V CO1B 330µF 6.3V – 5V 30mA 2.5V 0.3A 3.3V 0.3A 5V 0.8A LTC1693 TYPICAL APPLICATIONS 13 U C1 1.2µF 100V CER 68µF 20V AVX TSPE 10k P + 100k 0.1µF P 3.9k GND1 IN1 20 PHASE JP3 W2 T1 2 W3 2 7 5 6 18 1 RUN/SHDN 12VIN 2.2µF 19 OUT1 VCC1 470Ω OUT2 IN2 VCC2 LTC1693-1 GND2 JP2 100k 14 13 17 1 8 3 4 12V 5VOUT SHORT JP3, OPEN JP2 3.3VOUT, SHORT JP2, OPEN JP3 BAS21 BAS21 BAS21 13k MMBD914LT1 C2 1.2µF 100V CER COILCRAFT DO1608-105 36k +VIN –VIN INPUT 36V TO 75V +VIN +VIN BAT54 2.2µF 10Ω 5 10 P W4, 7T 6 x 26AWG W5, 10T 2 x 26AWG W1, 10T 32AWG, W2, 15T 32AWG W1, 10T 2 x 26AWG T2 T2 T1 8 15 W4 W4 4.7nF 7 VFB BG 4.7k 4.7k 9 2MIL POLY FILM 2MIL POLY FILM 2.4k 1µF BAT54 + OUT1 IN1 T2 P 2 7 5 6 85 90 95 100k + C5 330µF 6.3V 0 1 1 5 2 REF 6 8 48VIN 72VIN 8 9 10 4.42k 1% –VOUT 9.31k 1% BAS21 10Ω SEC HV 1693 TA10 SHORT JP1 FOR 5VOUT 0.01µF 1k 0.47µF 50V 3.01k 1% +VOUT MMFT3904 7 LT1431CS8 36VIN –VOUT OUTPUT 5V/10A +VOUT 2k 3.1V 3 4 5 6 7 OUTPUT CURRENT COLL 4 2 0.22µF 1µF 4.7µF 25V 1k –VOUT FZT600 + +VOUT 3 C3, C4, C5: SANYO OS-CON C4 330µF 6.3V 470Ω GND1 OUT2 IN2 GND2 VCC2 LTC1693-1 VCC1 CNY17-3 4 1 3 8 SUD30N04-10 W1 470Ω BAT54 1nF C3 330µF 6.3V 4.8µH PANASONIC ETQP AF4R8H 10Ω 470Ω 16 3.3Ω T1 PHILIPS EFD20-3F3 CORE LP = 720µH (AI = 1800) T2 ER11/5 CORE AI = 960µH 6 10Ω SEC HV SUD30N04-10 1nF 4.7nF 4.7nF W3 LT1339 W5 W1 0.1µF W3, 10T 32AWG, W4, 10T 32AWG 2.2nF 2.2nF 4 12 0.025Ω 1/2W W1, 18T BIFILAR 31AWG W3, 6T BIFILAR 31AWG 1µF 4.53k 3 11 10Ω P IRF1310NS MURS120 FMMT718 FMMT718 TS 470Ω SENSE + CT W2 SL/ADJ T2 SGND 47Ω PGND MMBD914LT1 TG SYNC SENSE – IAVG VBOOST 5VREF MURS120 VREF IRF1310NS SS 10Ω VC 0.1µF V+ GND-F +VIN EFFICIENCY RTOP COMP GND-S 14 RMID 48V to 5V Isolated Synchronous Forward DC/DC Converter LTC1693 TYPICAL APPLICATIONS U LTC1693 U TYPICAL APPLICATIONS 5V to 12V Boost Converter R2 13k 1% D1 BAT85 R1 7.5k 1% + C2 0.1µF C3 4.7µF VCC = 5V L1* D2 22µH 1N5819 VOUT 12V 50mA 8 1 7 LTC1693-3 3 C1 680pF Q1 BS170 + CL 47µF 4 1693 TA06a INDUCTOR PEAK CURRENT ≈ 600mA R2, C1 SET THE OSCILLATION FREQUENCY AT 200kHz R1 SETS THE DUTY CYCLE AT 45% EFFICIENCY ≈ 80% AT 50mA LOAD *SUMIDA CDRH125-220 Efficiency Output Voltage 18 100 VCC = 5V 50mA LOAD VCC = 5V 50mA LOAD 90 14 EFFICIENCY (%) OUTPUT VOLTAGE (V) 16 12 10 70 60 8 6 80 35 40 45 50 55 DUTY CYCLE (%) 60 65 1693 TA06b 50 10 11 12 13 14 OUTPUT VOLTAGE (V) 15 16 1693 TA06c 15 LTC1693 U TYPICAL APPLICATIONS Charge Pump Doubler R1 11k 1% VCC = 5V VCC = 5V C2 1µF C3 1µF 8 1 C1 680pF D1 1N5817 D2 1N5817 7 LTC1693-3 VOUT + 3 CL 47µF 4 1693 TA07a R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz AND THE DUTY CYCLE AT 35% Efficiency Output Voltage 100 12 VCC = 5V VCC = 5V 80 8 EFFICIENCY (%) OUTPUT VOLTAGE (V) 10 6 4 40 20 2 0 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 TA07b 16 60 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 TA07c LTC1693 U TYPICAL APPLICATIONS Charge Pump Inverter R1 11k 1% VCC = 5V C2 1µF C3 1µF 8 C1 680pF 7 LTC1693-3 3 4 + 1 D2 1N5817 D1 1N5817 CL 47µF VOUT 1693 TA08a R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz AND THE DUTY CYCLE AT 35% Efficiency Output Voltage 0 100 VCC = 5V VCC = 5V 80 –2 EFFICIENCY (%) OUTPUT VOLTAGE (V) –1 –3 –4 60 40 20 –5 –6 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 TA08b 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 TA08c 17 LTC1693 U TYPICAL APPLICATIONS Charge Pump Tripler R1 11k 1% VCC = 5V VCC = 5V C2 1µF C3 1µF 8 1 C1 680pF D3 1N5817 D4 1N5817 7 LTC1693-3 3 4 D1 1N5817 D2 1N5817 C5 1µF + + C4 3.3µF VOUT CL 47µF 1693 TA09a R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz AND THE DUTY CYCLE AT 35% Efficiency Output Voltage 90 16 80 14 70 12 60 10 8 6 50 40 30 4 20 2 10 0 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 TA09b 18 VCC = 5V VCC = 5V EFFICIENCY (%) OUTPUT VOLTAGE (V) 18 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 TA09c LTC1693 U PACKAGE DESCRIPTION Dimensions in inches (millimeters) unless otherwise noted. MS8 Package 8-Lead Plastic MSOP (LTC DWG # 05-08-1660) 0.118 ± 0.004* (3.00 ± 0.102) 8 7 6 5 0.118 ± 0.004** (3.00 ± 0.102) 0.192 ± 0.004 (4.88 ± 0.10) 1 2 3 4 0.040 ± 0.006 (1.02 ± 0.15) 0.007 (0.18) 0.034 ± 0.004 (0.86 ± 0.102) 0° – 6° TYP SEATING PLANE 0.012 (0.30) 0.0256 REF (0.65) TYP 0.021 ± 0.006 (0.53 ± 0.015) 0.006 ± 0.004 (0.15 ± 0.102) MSOP (MS8) 1197 * DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE ** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE S8 Package 8-Lead Plastic Small Outline (Narrow 0.150) (LTC DWG # 05-08-1610) 0.189 – 0.197* (4.801 – 5.004) 8 7 6 5 0.150 – 0.157** (3.810 – 3.988) 0.228 – 0.244 (5.791 – 6.197) 1 0.010 – 0.020 × 45° (0.254 – 0.508) 0.008 – 0.010 (0.203 – 0.254) 0.053 – 0.069 (1.346 – 1.752) 0°– 8° TYP 0.016 – 0.050 0.406 – 1.270 0.014 – 0.019 (0.355 – 0.483) 2 3 4 0.004 – 0.010 (0.101 – 0.254) 0.050 (1.270) TYP *DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE **DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. SO8 0996 19 LTC1693 U TYPICAL APPLICATION Isolated Push-Pull DC/DC Converter R1 6.2k C3 0.1µF C4 1µF C2 0.1µF 74HC14 + T1B 1 10 14 12 11 12 7 PRESET D LTC1693-2 7 Q1 Si4410 Q Q 2 8 GND 6 3 7 LTC1693-2 5 R2 10Ω Q2 Si4410 2 • T1D 24T #32 • 9 T1E 24T 8 #28 • T1C 3 24T #32 4 C5 2.2nF 100V ×2 9 1• 24T #32 2 13 CLR 74HC74 C6 330µF 6.3V 8 1 14 C1 390pF T1A 24T #32 VCC = 5V VCC = 5V 13 VCC = 5V C7 2.2nF 100V R3 10Ω D1 MBR340 L1 1µH + • 9 T1F 24T 8 #28 D2 MBR340 C9 270µF 25V ×3 VOUT 12V 1A 3• 4 R4 10Ω C8 2.2nF 100V T1: PHILIPS CPHS-EFD20-1S-10P FIRST WIND T1A AND T1C BIFILAR, THEN WIND T1E AND T1F BIFILAR, THEN WIND T1B AND T1D BIFILAR 4 1693 F05a Efficiency Output Voltage 14 100 VCC = 5V VCC = 5V 90 80 10 EFFICIENCY (%) OUTPUT VOLTAGE (V) 12 8 6 4 70 60 50 40 2 30 20 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 OUTPUT CURRENT (A) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 OUTPUT CURRENT (A) 1693 F05c 1693 F05b RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LTC1154 High Side Micropower MOSFET Drivers Internal Charge Pump, 4.5V to 48V Supply Range, tON = 80µs, tOFF = 28µs LTC1155 Dual Micropower High/Low Side Drivers with Internal Charge Pump 4.5V to 18V Supply Range LTC1156 Dual Micropower High/Low Side Drivers with Internal Charge Pump 4.5V to 18V Supply Range LTC1157 3.3V Dual Micropower High/Low Side Driver 3.3V or 5V Supply Range LT®1160/LT1162 Half/Full Bridge N-Channel Power MOSFET Driver Dual Driver with Topside Floating Driver, 10V to 15V Supply Range LT1161 Quad Protected High Side MOSFET Driver 8V to 48V Supply Range, tON = 200µs, tOFF = 28µs LTC1163 Triple 1.8V to 6V High Side MOSFET Driver 1.8V to 6V Supply Range, tON = 95µs, tOFF = 45µs LT1339 High Power Synchronous DC/DC Controller Current Mode Operation Up to 60V, Dual N-Channel Synchronous Drive LTC1435 High Efficiency, Low Noise Current Mode Step-Down DC/DC Controller 3.5V to 36V Operation with Ultrahigh Efficiency, Dual N-Channel MOSFET Synchronous Drive 20 Linear Technology Corporation 1693fa LT/TP 1000 2K REV A • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408)432-1900 ● FAX: (408) 434-0507 ● www.linear-tech.com LINEAR TECHNOLOGY CORPORATION 1999