RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 30W, 26V 10/31/03 MAPLST1900-030CF Preliminary Features Package Style Designed for PHS applications in the 1890-1925 MHz frequency band. Q Q Typical performance in PHS mode at -68 dBc ACPR (600kHz): Q Average Output Power: 8W Q Gain: 13dB (typ.) Q Efficiency: 26% (typ.) 10:1 VSWR Ruggedness at 8W, 26V, 1890MHz) MAPLST1900-030CF Maximum Ratings Parameter Symbol Rating Units Drain—Source Voltage VDSS 65 Vdc Gate—Source Voltage VGS 20 Vdc Total Power Dissipation @ TC = 25 °C PD 97 W Storage Temperature TSTG -40 to +150 °C Junction Temperature TJ +200 °C Symbol Max Unit RΘJC 1.8 ºC/W Thermal Characteristics Characteristic Thermal Resistance, Junction to Case NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V MAPLST1900-030CF 10/31/03 Preliminary Characteristic Symbol Min Symbol V(BR)DSS Min 65 Typ — Max — Unit Vdc Zero Gate Voltage Drain Leakage Current 26 Vdc, VGS (VDS DS = 65 GS = 0) IDSS IDSS —— —— 101 µAdc µAdc Gate—Source Leakage Zero Gate Voltage DrainCurrent Leakage Current (VGS == 26 5 Vdc, VVDS ==0)0) (V Vdc, DS GS IGSS IDSS —— —— 11 µAdc µAdc Gate Threshold Voltage Gate—Source Leakage Current (VDS = 10 Vdc, ID = 1 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON CHARACTERISTICS (VDS = 26 Vdc, ID = 250 mA) VGS(th) IGSS — 2 — — 1 4 Vdc µAdc VDS(Q) 2 — 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) VDS(on) — 0.2 — Vdc Forward Transconductance (VGS = 10 Vdc, ID = 1 A) Gm — 1.2 — S Input Capacitance (Including Input Matching DYNAMIC CHARACTERISTICS (1) Capacitor in Package) Ciss — 90 — pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss — 32.5 — pF Reverse Transfer Capacitance FUNCTIONAL TESTS (In M/A-COM Test Fixture) (2) Crss — 1.5 — pF PHS Gain (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1920 MHz) Gps — 13.0 — dB PHS Drain Efficiency (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1920 MHz) EFF (ŋ) — 26 — % PHS ACPR @ 600 kHz offset (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1905 MHz) ACPR — -68 — dBc PHS ACPR @ 900 kHz offset (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1905 MHz) ACPR — -78 — dBc PHS Gain (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1890 MHz) Gps — 13.0 — dB PHS Drain Efficiency (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1890 MHz) EFF (ŋ) — 26 — % Input Return Loss (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1920 MHz) IRL — -12 -9 dB Output VSWR Tolerance (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1890 MHz) Ψ DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage GS = 0 Vdc, ID = 20 µAdc) OFF(V CHARACTERISTICS Typ Max Unit DYNAMIC CHARACTERISTICS @ 25ºC (VDS = 26 Vdc, VGS = 0, f = 1 MHz) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V MAPLST1900-030CF 10/31/03 Preliminary C1,C7 Electrolytic Surface Mt. Cap., 100 µF, 35 V C2,C8 Ceramic Chip Capacitor, 0.1 µF C3,C9 Ceramic Chip Capacitor, 1000 pF C4,C5,C10,C11 Chip Capacitor, 8.2 pF ATC100B C6 Chip Capacitor, 0.5 pF ATC100B C12 Chip Capacitor, 1.2 pF ATC100B J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 8 nH, CoilCraft A03T L2,L3 Inductor, 18.5 nH, CoilCraft A05T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST1900-030CF R1 Chip Resistor (0805), 100k Ohm R2 Chip Resistor (0805), 10K Ohm Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Distributed Microstrip Element, 0.851” x 0.082” Distributed Microstrip Element, 0.105” x 0.082” Distributed Microstrip Element, 0.515” x 0.082” Distributed Microstrip Element, 0.370” x 0.160” Distributed Microstrip Element, 0.460” x 0.300” Distributed Microstrip Element, 0.226” x 0.660” Distributed Microstrip Element, 0.425” x 0.380” Distributed Microstrip Element, 0.792” x 0.082” Distributed Microstrip Element, 0.283” x 0.082” Distributed Microstrip Element, 0.565” x 0.082” PC Board (74350132-01), Arlon Woven Glass Teflon .030” Thick, Er=2.54, 2 Oz Copper Both Sides Figure 1. 1890—1925 MHz Test Fixture Schematic Figure 2. 1890—1925 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V MAPLST1900-030CF 10/31/03 Preliminary 13.50 40 13.25 35 12.75 30 12.50 25 12.25 20 12.00 11.75 11.50 11.25 15 Gain (1899MHz) Gain (1905MHz) Eff (1899MHz) Eff (1905MHz) f 11.00 Efficiency (%) Gain (dB) 13.00 10 5 10.75 0 30 31 32 33 34 35 36 37 38 39 40 41 42 43 POUT(dBm) avg. Graph 1. PHS: Power Gain and Drain Efficiency vs. Output Power POUT(dBm) avg. 30 31 32 33 34 35 36 37 38 39 40 41 42 43 -55 ACPR (600kHz Offset) @ 1905MHz Pi/4 DQPSK,192 kHz, 26VDC, 250mA -60 ACPR Lower (1905MHz) Gain(dB) ACPR Upper (1905MHz) -65 -70 -75 -80 Graph 2. PHS: Adjacent Channel Power Ratio vs. Output Power 4 RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V MAPLST1900-030CF 10/31/03 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 5 North America: Tel. 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