MICROWAVE POWER GaAs FET TIM0910-5 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=37.5dBm at 9.5GHz to 10.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.0dB at 9.5GHz to 10.5GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ∆G CONDITIONS VDS= 9V f= 9.5 to 10.5GHz ηadd ∆Tch (VDS X IDS + Pin – P1dB) UNIT dBm MIN. 37.0 TYP. MAX. 37.5 dB 6.0 7.0 A dB % °C 2.0 2.5 ±0.8 UNIT mS MIN. MAX. TYP. 1500 V -1.5 -3.0 -4.5 A 5.0 V -5 °C/W 3.0 3.7 25 80 X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 2.4A VDS= 3V IDS= 72mA VDS= 3V VGS= 0V IGS= -72µA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm VGSoff u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Sep. 2006 TIM0910-5 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 5.7 Total Power Dissipation (Tc= 25 °C) PT W 40.5 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 4-R2.4 2.0MIN. PACKAGE OUTLINE (2-9D1B) (1) Unit: mm (1) Gate (2) Source (2) (3) Drain 2.0MIN 0.5±0.15 1.8±0.3 0.2MAX 8.5 MAX. 3.2MAX +0.1 0.1 -0.05 13.0±0.3 17.0 MAX. 1.2±0.3 (3) 9.7±0.3 2.5±0.3 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM0910-5 RF PERFORMANCES Output Power (Pout) vs. Frequency VDS=9V IDS≅2.0A Pout(dBm) Pin=30.5dBm 38 37 36 35 9.5 10.0 10.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 41 freq.=10.5GHz 39 VDS=9V IDS≅2.0A 70 Pout(dBm) 38 60 Pout 37 50 36 40 35 30 ηadd 34 20 33 10 32 0 24 26 28 30 Pin(dBm) 3 32 34 ηadd(%) 40 TIM0910-5 Power Dissipation(PT) vs. Case Temperature(Tc) PT(W) 40 30 20 10 0 0 40 80 120 Tc( °C ) 4 160 200