VO615A Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C, Rated FEATURES • CTR offered in 9 groups • Isolation materials according to UL94-VO • Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664) C E • Climatic classification 40/110/21 (IEC 60068 part 1) • Temperature range - 40 °C to + 110 °C A V D E C 1 17918_2 • Rated impulse VIOTM = 8 kVpeak voltage (transient overvoltage) • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV C DESCRIPTION The VO615A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package. The elements are mounted on one leadframe, providing a fixed distance between input and output for highest safety requirements. APPLICATIONS • Rated isolation VIOWM = 600 VRMS voltage • Rated recurring VIORM = 850 Vpeak peak (RMS includes voltage DC) (repetitive) • Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175 • Thickness through insulation ≥ 0.75 mm • External creepage distance > 8 mm Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): • for appl. class I - IV at mains voltage ≤ 300 V • for appl. class I - IV at mains voltage ≤ 600 V according to table 1 of IEC 60664-1, suitable for: AGENCY APPROVALS • BSI: EN 60065:2002, 8967/8968 EN 60950:2000 - Switch-mode power supplies • DIN EN 60747-5-2 (VDE 0884) pending DIN EN 60747-5-5 pending - Line receiver • FIMKO pending certificate - Computer peripheral interface - Microprocessor system interface ORDER INFORMATION PART VO615A REMARKS CTR 50 to 600 %, DIP-4 VO615A-1 CTR 40 to 80 %, DIP-4 VO615A-2 CTR 63 to 125 %, DIP-4 VO615A-3 CTR 100 to 200 %, DIP-4 VO615A-4 CTR 160 to 320 %, DIP-4 VO615A-5 CTR 50 to 150 %, DIP-4 VO615A-6 CTR 100 to 300 %, DIP-4 VO615A-7 CTR 80 to 160 %, DIP-4 VO615A-8 CTR 130 to 260 %, DIP-4 VO615A-9 VO615A-X006 VO615A-1X006 VO615A-2X006 VO615A-3X006 VO615A-4X006 VO615A-5X006 Document Number: 81753 Rev. 1.0, 04-Mar-08 CTR 200 to 400 %, DIP-4 CTR 50 to 600 %, DIP-4, 400 mil (option 6) CTR 40 to 80 %, DIP-4, 400 mil (option 6) CTR 63 to 125 %, DIP-4, 400 mil (option 6) CTR 100 to 200 %, DIP-4, 400 mil (option 6) CTR 160 to 320 %, DIP-4, 400 mil (option 6) CTR 50 to 150 %, DIP-4, 400 mil (option 6) For technical questions, contact: [email protected] www.vishay.com 1 VO615A Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C, Rated ORDER INFORMATION PART REMARKS VO615A-6X006 VO615A-7X006 VO615A-8X006 VO615A-9X006 VO615A-X007 VO615A-1X007 VO615A-2X007 VO615A-3X007 VO615A-4X007 VO615A-5X007 VO615A-6X007 VO615A-7X007 VO615A-8X007 VO615A-9X007 VO615A-X009 VO615A-1X009 VO615A-2X009 VO615A-3X009 VO615A-4X009 CTR 100 to 300 %, DIP-4, 400 mil (option 6) CTR 80 to 160 %, DIP-4, 400 mil (option 6) CTR 130 to 260 %, DIP-4, 400 mil (option 6) CTR 200 to 400 %, DIP-4, 400 mil (option 6) CTR 50 to 600 %, SMD-4 (option 7) CTR 40 to 80 %, SMD-4 (option 7) CTR 63 to 125 %, SMD-4 (option 7) CTR 100 to 200 %, SMD-4 (option 7) CTR 160 to 320 %, SMD-4 (option 7) CTR 50 to 150 %, SMD-4 (option 7) CTR 100 to 300 %, SMD-4 (option 7) CTR 80 to 160 %, SMD-4 (option 7) CTR 130 to 260 %, SMD-4 (option 7) CTR 200 to 400 %, SMD-4 (option 7) CTR 50 to 600 %, SMD-4 (option 9) CTR 40 to 80 %, SMD-4 (option 9) CTR 63 to 125 %, SMD-4 (option 9) CTR 100 to 200 %, SMD-4 (option 9) CTR 160 to 320 %, SMD-4 (option 9) Note For additional information on the possible lead bend and VDE options refer to option information. ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 6 V mA INPUT Reverse voltage Forward current IF 60 Forward surge current tP ≤ 10 µs IFSM 1.5 A LED power dissipation at 25 °C Pdiss 100 mW Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V OUTPUT IC 50 mA tP/T = 0.5, tP ≤ 10 ms ICM 100 mA at 25 °C Pdiss 150 mW Collector current Collector peak current Output power dissipation COUPLER VISO 5000 VRMS Operating ambient temperature range Tamb - 40 to + 110 °C Storage temperature range Tstg - 40 to + 125 °C Tsld 260 °C Isolation test voltage (RMS) Soldering temperature (2) t = 1 min 2 mm from case, ≤ 10 s Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81753 Rev. 1.0, 04-Mar-08 VO615A Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature, 110 °C, Rated THERMAL CHARACTERISTICS (1) SYMBOL VALUE UNIT Maximum LED junction temperature PARAMETER TEST CONDITION Tjmax 125 °C Maximum output die junction temperature Tjmax 125 °C Thermal resistance, junction emitter to board θEB 173 °C/W Thermal resistance, junction emitter to case θEC 149 °C/W Thermal resistance, junction detector to board θDB 111 °C/W Thermal resistance, junction detector to case θDC 127 °C/W Thermal resistance, junction emitter to junction detector θED 173 °C/W Thermal resistance, board to ambient (2) θBA 197 °C/W Thermal resistance, case to ambient (2) θCA 4041 °C/W Notes (1) The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers Application note. (2) For 2 layer FR4 board (4" x 3" x 0.062). TA θCA Package TC θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 TA Document Number: 81753 Rev. 1.0, 04-Mar-08 For technical questions, contact: [email protected] www.vishay.com 3 VO615A Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C, Rated ELECTRICAL CHARACTERISTICS (1) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage IF = ± 50 mA VF 1.25 VR = 0, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 20 V, If = 0, E = 0 ICEO Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF Junction capacitance V pF OUTPUT Collector emitter cut-off current 10 100 nA 0.3 V COUPLER Coupling capacitance Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA www.vishay.com 4 PART SYMBOL MIN. TYP. VO615A-1 CTR 13 30 MAX. UNIT % VO615A-2 CTR 22 45 % VO615A-3 CTR 34 70 % VO615A-4 CTR 56 90 VO615A CTR 50 % 600 % VO615A-5 CTR 50 150 % VO615A-6 CTR 100 300 % VO615A-7 CTR 80 160 % VO615A-8 CTR 130 260 % VO615A-9 CTR 200 400 % VO615A-1 CTR 40 80 % VO615A-2 CTR 63 125 % VO615A-3 CTR 100 200 % VO615A-4 CTR 160 320 % For technical questions, contact: [email protected] Document Number: 81753 Rev. 1.0, 04-Mar-08 VO615A Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature, 110 °C, Rated MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 130 mA Pdiss 265 mW Tsi 150 °C INPUT Forward current OUTPUT Power dissipation COUPLER Safety temperature Note According to DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) Vpd 1.3 kV Insulation resistance UNIT VIO = 500 V RIO 1012 Ω RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω Recurring peak voltage VIORM VIOTM Max. working voltages MAX. VIO = 500 V, Tamb = 100 °C Rated impulse voltage Ptot - Total Power Dissipation (mW) TYP. 8 kV 850 Vpeak VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor Psi (mW) 250 200 = 1 to 10 s =1s = 10 s = 12 s VPd 150 VIOWM VIORM 100 IR-Diode Isi (mA) 50 0 94 9182 0 0 25 50 75 100 125 Tsi - Safety Temperature (°C) Fig. 1 - Derating Diagram Document Number: 81753 Rev. 1.0, 04-Mar-08 150 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-; IEC 60747 For technical questions, contact: [email protected] www.vishay.com 5 VO615A Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C, Rated SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) MIN TYP. MAX UNIT td 3.0 µs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tr 3.0 µs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tf 4.7 µs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ts 0.3 µs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ton 6.0 µs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) toff 5.0 µs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 9.0 µs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 10.0 µs IF IF 0 IC +5V IF 0 IC = 2 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 µs Channel II 50 Oscilloscope RL = 1 M CL = 20 pF 100 tp td tr t on (= t d + tr) 95 10804 t 100 % 90 % 10 % 0 Channel I tp tr td t on ts Pulse duration Delay time Rise time Turn-on time ts tf t off (= ts + tf) tf t off t Storage time Fall time Turn-off time 96 11698 Fig. 3 - Test Circuit, Non-Saturated Operation IF IF = 10 mA 0 Fig. 5 - Switching Times +5V IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω 1 kΩ Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 95 10843 Fig. 4 - Test Circuit, Saturated Operation www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 81753 Rev. 1.0, 04-Mar-08 VO615A Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature, 110 °C, Rated PACKAGE DIMENSIONS in millimeters 0.268 (6.81) 0.255 (6.48) Pin 1 Identifier 0.190 (4.83) 0.179 (4.55) 0.312 (7.92) 0.296 (7.52) ISO Method A 0.033 (0.84) 0.029 (0.74) 0.045 (1.14) 0.030 (0.76) 0.150 (3.81) 0.130 (3.30) 0.250 (6.35) 0.230 (5.84) 0.130 (3.30) 0.110 (2.79) 0.035 (0.89) 0.020 (0.51) 3° to 9° 0.052 (1.32) 0.048 (1.22) 0.012 (0.30) 0.105 (2.67) 0.095 (2.41) i178027-2 0.008 (0.20) Option 6 Option 7 Option 8 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.300 (7.62) typ. 0.395 (10.03) 0.375 (9.53) 0.312 (7.92) 0.296 (7.52) 0.098 (0.249) 0.040 (0.102) 0.028 (0.7) 0.180 (4.6) 0.160 (4.1) 0.020 (0.50) 0.000 (0.00) 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.012 (0.30) 0.008 (0.20) 0.040 (1.02) 0.020 (0.51) 0.365 (9.27) min. 0.472 (12.00) max. 0.331 (8.4) min. 0.400 (10.16) 0.430 (10.92) 0.150 (3.81) 0.130 (3.30) 15° max. 0.315 (8.00) min. 0.030 (0.76) 0.100 (2.54) 0.100 (2.54) R 0.010 (0.25) 0.030 (0.76) R 0.010 (0.25) 0.030 (0.76) 0.100 (2.54) 0.406 (10.3) max. R 0.010 (0.25) 0.435 (11.05) Document Number: 81753 Rev. 1.0, 04-Mar-08 0.060 (1.52) 0.392 (9.95) min. 0.512 (13.00) 0.060 (1.52) For technical questions, contact: [email protected] 0.315 (8.00) min. 0.435 (11.05) 0.070 (1.78) 0.315 (8.00) min. 0.070 (1.78) 0.060 (1.52) 0.070 (1.78) 20802 www.vishay.com 7 VO615A Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C, Rated OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 81753 Rev. 1.0, 04-Mar-08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1