SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS FEATURES • Low CTR degradation • Good CTR linearity depending on forward current • Isolation test voltage, 5300 VRMS A C 1 2 4 3 C • High collector emitter voltage, VCEO = 70 V E • Low saturation voltage • Fast switching times i179060 • Temperature stable DESCRIPTION • Low coupling capacitance The SFH615XXX features a large assortment of current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of > 8 mm are achieved with option 6. This version complies with 60950 (DIN VDE 0805) for reinforced insulation up to operation voltage of 400 VRMS or DC. • End stackable, 0.100" (2.54 mm) spacing • High common mode interference immunity (unconnected base) • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 • BSI IEC 60950; IEC 60065 ORDER INFORMATION PART REMARKS SFH615AA CTR 50 to 600 %, DIP-4 SFH615AB CTR 80 to 260 %, DIP-4 SFH615ABL CTR 200 to 600 %, DIP-4 SFH615ABM CTR 200 to 400 %, DIP-4 SFH615AGB CTR 100 to 600 %, DIP-4 SFH615AGR CTR 100 to 300 %, DIP-4 SFH615AY CTR 50 to 150 %, DIP-4 SFH615AA-X006 CTR 50 to 600 %, DIP-4 400 mil (option 6) SFH615AA-X007 CTR 50 to 600 %, SMD-4 (option 7) SFH615ABM-X006 CTR 200 to 400 %, DIP-4 400 mil (option 6) SFH615ABM-X007 CTR 200 to 400 %, SMD-4 (option 7) SFH615AGB-X006 CTR 100 to 600 %, DIP-4 400 mil (option 6) SFH615AGB-X009 CTR 100 to 600 %, SMD-4 (option 9) SFH615AGR-X006 CTR 100 to 300 %, DIP-4 400 mil (option 6) SFH615AGR-X007 CTR 100 to 300 %, SMD-4 (option 7) SFH615AY-X006 CTR 50 to 150 %, DIP-4 400 mil (option 6) SFH615AY-X008 CTR 50 to 150 %,SMD-4 (option 8) SFH615AY-X009 CTR 50 to 150 %,SMD-4 (option 9) Note For additional information on the available options refer to option information. Document Number: 83672 Rev. 1.6, 10-Jan-08 For technical questions, contact: [email protected] www.vishay.com 1 SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 6.0 V DC forward current IF 60 mA IFSM 2.5 A Pdiss 100 mW V INPUT tP ≤ 10 ms Surge forward current Power dissipation OUTPUT Collector emitter voltage VCE 70 Emitter collector voltage VEC 7.0 V IC 50 mA Collector current tP ≤ 10 ms Total power dissipation IC 100 mA Pdiss 150 mW VISO 5300 VRMS COUPLER Isolation test voltage between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74 Creepage distance ≥7 mm Clearance distance ≥7 mm Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 CTI ≥ 175 VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tsld 260 °C Isolation resistance Soldering temperature (2) max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm Ω Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 60 mA VF 1.25 1.65 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VR = 0 V, f = 1.0 MHz Thermal resistance CO 13 pF Rthja 750 K/W OUTPUT Collector emitter capacitance Thermal resistance www.vishay.com 2 VCE = 5.0 V, f = 1.0 MHz CCE 5.2 pF Rthja 500 K/W For technical questions, contact: [email protected] Document Number: 83672 Rev. 1.6, 10-Jan-08 SFH615AA/AGB/AGR/ABM/ABL/AY/AB Optocoupler, Phototransistor Output, Vishay Semiconductors High Reliability, 5300 VRMS ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT VCEsat 0.25 0.4 V COUPLER Collector emitter saturation voltage IF = 10 mA, IC = 2.5 mA Coupling capacitance Collector emitter leakage current VCEO = 10 V CC 0.4 SFH615AA ICEO 10 100 nA SFH615AGB ICEO 10 100 nA SFH615AGR ICEO 10 100 nA SFH615ABM ICEO 10 100 nA SFH615ABL ICEO 10 100 nA SFH615AY ICEO 10 100 nA SFH615AB ICEO 10 100 nA pF Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION IC/IF PART SYMBOL MIN. MAX. UNIT SFH615AA CTR 50 TYP. 600 % SFH615AGB CTR 100 600 % SFH615AGR CTR 100 300 % IF = 5.0 mA, VCE = 5.0 V SFH615ABM CTR 200 400 % SFH615ABL CTR 200 600 % SFH615AY CTR 50 150 % SFH615AB CTR 80 260 % MIN. MAX. UNIT SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Turn-on time IF = 5.0 mA ton TYP. 2.0 µs Turn-off time IF = 5.0 mA toff 25 µs TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified % 103 IF 1 kΩ VCC = 5 V IC IF 5 IF = 10 mA, VCC = 5.0 V 4 3 2 102 1 47 Ω 5 isfh615aa_01 101 - 25 0 isfh615aa_02 Fig. 1 - Switching Operation (With Saturation) Document Number: 83672 Rev. 1.6, 10-Jan-08 25 50 °C 75 TA Fig. 2 - Current Transfer Ratio (Typical) vs. Temperature For technical questions, contact: [email protected] www.vishay.com 3 SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS 20 pF C 104 mA IF 5 f = 1.0 MHz D=0 0.005 0.01 0.02 15 103 5 10 D= tp T 0.05 0.1 tp IF T Pulse cycle D = parameter 0.2 0.5 102 5 DC 5 CCE 0 10-2 10-1 100 101 V Ve isfh615aa_03 10-5 10-4 10-3 10-2 10-1 100 s 101 tp isfh615aa_06 Fig. 3 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage IF 101 102 120 mA Fig. 6 - Permissible Pulse Handling Capability Forward Current vs. Pulse Width 1.2 VF V 25 °C 50 °C 75 °C 90 1.1 60 1.0 30 0 0 25 50 75 isfh615aa_04 TA °C 100 10-1 5 100 5 isfh615aa_07 Fig. 4 - Permissible Diode Forward Current vs. Ambient Temperature Ic 0.9 101 5 mA IF 102 Fig. 7 - Diode Forward Voltage (Typ.) vs. Forward Current 200 Ptot mW 30 mA IF = 14 mA 150 Transistor IF = 12 mA 20 IF = 10 mA 100 IF = 8 mA Diode IF = 6 mA 10 50 IF = 4 mA IF = 1 mA 0 IF = 2 mA 0 0 0 isfh615aa_05 5 10 V 15 VCE Fig. 5 - Output Characteristics (Typ.) Collector Current vs. Collector Emitter Voltage www.vishay.com 4 25 isfh615aa_08 50 75 TA °C 100 Fig. 8 - Permissible Power Dissipation vs. Temperature For technical questions, contact: [email protected] Document Number: 83672 Rev. 1.6, 10-Jan-08 SFH615AA/AGB/AGR/ABM/ABL/AY/AB Optocoupler, Phototransistor Output, Vishay Semiconductors High Reliability, 5300 VRMS PACKAGE DIMENSIONS in inches (millimeters) 2 1 Pin one ID 0.255 (6.48) 0.268 (6.81) ISO method A 3 4 0.179 (4.55) 0.190 (4.83) 0.300 (7.62) typ. 0.031 (0.79) typ. 0.030 (0.76) 0.045 (1.14) 0.050 (1.27) typ. 0.130 (3.30) 0.150 (3.81) 10° 4° typ. 0.020 (0.508) 0.035 (0.89) 0.018 (0.46) i178027 0.230 (5.84) 0.250 (6.35) 0.050 (1.27) 0.022 (0.56) 0.110 (2.79) 0.130 (3.30) 3° to 9° 0.008 (0.20) 0.012 (0.30) 0.100 (2.54) Option 9 0.375 (9.53) 0.395 (10.03) 0.300 (7.62) ref. 0.040 (0.102) 0.098 (0.249) 0.012 (0.30) typ. 0.020 (0.51) 0.040 (1.02) 18486 Document Number: 83672 Rev. 1.6, 10-Jan-08 0.315 (8.00) min. 15° max. For technical questions, contact: [email protected] www.vishay.com 5 SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 83672 Rev. 1.6, 10-Jan-08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1