CNY17G Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection B 6 C 5 FEATURES E 4 • Isolation test voltage 5300 VRMS • Isolation materials according to UL94-VO • Pollution degree 2 (DIN/VDE 0110 part 1 resp. IEC 60664) 1 2 3 • Climatic classification 55/100/21 (IEC 60068 part 1) A (+) C (-) nc • Special construction: therefore, extra low coupling capacity of typical 0.3 pF, high common mode rejection V D E 18537 • Low temperature coefficient of CTR DESCRIPTION The CNY17G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. voltage These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-5 Optocoupler for electrical safety requirements (transient overvoltage) • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • Rated isolation voltage (RMS VIOWM = 600 VRMS (848 V peak) • Rated recurring VIORM = 600 VRMS VDE STANDARDS peak includes voltage DC) (repetitive) • Thickness through insulation ≥ 0.75 mm • Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI = 275 • CTR offered in 4 groups • IEC EN 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) • VDE 0804 Telecommunication apparatus and data processing • IEC 60065 Safety for mains-operated household apparatus • Rated impulse VIOTM = 6 kV peak • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Switch-mode power supplies electronic and related • Line receiver • Computer peripheral interface AGENCY APPROVALS • Microprocessor system interface • UL1577, file no. E76222 system code A, double protection • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 • BSI: BS EN 41003, BS EN 60065 (BS 415), BS EN 60950 (BS 7002), certificate number 7081 and 7402 • DIN EN 60747-5-5 • FIMKO (SETI): EN 60950, certificate no. 12399 ORDER INFORMATION PART REMARKS CNY17G-1 CTR 40 to 80 %, DIP-6 CNY17G-2 CTR 63 to 125 %, DIP-6 CNY17G-3 CTR 100 to 200 %, DIP-6 CNY17G-4 CTR 160 to 320 %, DIP-6 Note G = leadform 10.16 mm; G is marked on the body. Document Number: 83886 Rev. 1.4, 08-May-08 For technical questions, contact: [email protected] www.vishay.com 229 CNY17G Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 60 mA IFSM 3 A Pdiss 100 mW Tj 125 °C Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 7 V mA tp ≤ 10 µs Forward surge current Power dissipation Junction temperature OUTPUT Collector current IC 50 ICM 100 mA Pdiss 150 mW Tj 125 °C Isolation test voltage (RMS) VISO 3750 VRMS Total power dissipation Ptot 250 mW Ambient temperature range Tamb - 55 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C tp/T = 0.5, tp ≤ 10 ms Collector peak current Power dissipation Junction temperature COUPLER 2 mm from case, t ≤ 10 s Soldering temperature (2) Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT IF = 50 mA VF 1.25 VR = 0 V, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 32 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 10 V, IF = 0 ICEO Forward voltage Junction capacitance V pF OUTPUT Collector emitter cut-off current 10 100 nA COUPLER AC isolation test voltage (RMS) f = 50 Hz, t = 1 s VISO Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF Coupling capacitance 3750 VRMS 0.3 V Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. www.vishay.com 230 For technical questions, contact: [email protected] Document Number: 83886 Rev. 1.4, 08-May-08 CNY17G Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 5 V, IF = 10 mA IC/IF VCE = 5 V, IF = 1 mA PART SYMBOL MIN. CNY17G-1 CTR 40 TYP. MAX. 80 UNIT % CNY17G-2 CTR 63 125 % CNY17G-3 CTR 100 200 % CNY17G-4 CTR 160 320 % CNY17G-1 CTR 13 % CNY17G-2 CTR 22 % CNY17G-3 CTR 34 CNY17G-2 CTR 56 % 200 % MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 130 mA Pdiss 265 mW VIOTM 6 kV Tsi 150 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 6 kV Vpd 1.3 kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω Ptot - Total Power Dissipation (mW) Insulation resistance TYP. MAX. UNIT VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor Psi (mW) 250 200 = 1 to 10 s =1s = 10 s = 12 s VPd 150 VIOWM VIORM 100 IR-Diode Isi (mA) 50 0 94 9182 0 0 25 50 75 100 125 Tsi - Safety Temperature (°C) Fig. 1 - Derating Diagram Document Number: 83886 Rev. 1.4, 08-May-08 150 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC60747 For technical questions, contact: [email protected] www.vishay.com 231 CNY17G Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) MIN. TYP. MAX. UNIT td 4.0 µs Rise time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) tr 7.0 µs Fall time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) tf 6.7 µs Storage time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) ts 0.3 µs Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) ton 11.0 µs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) toff 7.0 µs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 25 µs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 42.5 µs IF 0 IF 0 IC +5V IF IC = 5 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 100 95 10900 t 100 % 90 % 10 % 0 Oscilloscope RL 1 M CL 20 pF tp tp td tr t on (= t d + tr) tr td t on ts Pulse duration Delay time Rise time Turn-on time ts tf t off (= ts + tf) tf t off t Storage time Fall time Turn-off time 96 11698 Fig. 3 - Test Circuit, Non-Saturated Operation IF IF = 10 mA 0 Fig. 5 - Switching Times +5V IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω 1 kΩ Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 95 10843 Fig. 4 - Test Circuit, Saturated Operation www.vishay.com 232 For technical questions, contact: [email protected] Document Number: 83886 Rev. 1.4, 08-May-08 CNY17G Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors TYPICAL CHARACTERISTICS Ptot - Total Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 10000 ICEO - Collector Dark Current, with Open Base (nA) 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 1000 100 10 1 0 0 40 80 Fig. 6 - Total Power Dissipation vs. Ambient Temperature 100 10 1 0.1 VF - Forward Voltage (V) VS = 5 V 0.1 0.01 0.001 1 1.3 100 10 IF - Forward Current (mA) 95 11052 Fig. 10 - Collector Base Current vs. Forward Current 100 1.5 1.4 100 75 1 VCE = 5 V IF = 10 mA IC - Collector Current (mA) CTRrel - Relative Current Transfer Ratio Fig. 7 - Forward Current vs. Forward Voltage 50 Fig. 9 - Collector Dark Current vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 25 Tamb - Ambient Temperature (°C) 95 11026 ICB- Collector Base Current (mA) 1000 IF - Forward Current (mA) 0 120 Tamb - Ambient Temperature (°C) 96 11700 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 96 11920 VCE = 20 V IF = 0 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature Document Number: 83886 Rev. 1.4, 08-May-08 VCE = 5 V 10 1 0.1 0.01 0.1 95 11053 1 100 10 IF - Forward Current (mA) Fig. 11 - Collector Current vs. Forward Current For technical questions, contact: [email protected] www.vishay.com 233 CNY17G Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors CTR - Current Transfer Ratio (%) IC - Collector Current (mA) 100 20 mA IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 0.1 1 0.8 0.6 CTR = 50 % used 0.4 0.2 20 % used 10 % used 95 11055 IC - Collector Current (mA) 800 600 400 200 95 11056 1 10 100 IC - Collector Current (mA) Fig. 14 - DC Current Gain vs. Collector Current www.vishay.com 234 50 toff 40 30 ton 20 Saturated operation VS = 5 V RL = 1 kΩ 10 0 0 5 10 20 15 IF - Forward Current (mA) Fig. 16 - Turn-on/off Time vs. Forward Current ton/toff - Turn-on/Turn-off Time (µs) hFE - DC Current Gain VCE = 5 V 100 10 Fig. 15 - Current Transfer Ratio vs. Forward Current 95 11017 1000 0.1 1 IF - Forward Current (mA) 100 10 Fig. 13 - Collector Emitter Saturation Voltage vs. Collector Current 0 0.01 1 0.1 ton/toff - Turn-on/Turn-off Time (µs) VCEsat - Collector Emitter Saturation Voltage (V) 1.0 1 10 95 11057 Fig. 12 - Collector Current vs. Collector Emitter Voltage 0 VCE = 5 V 100 100 10 VCE - Collector Emitter Voltage (V) 95 11054 1000 20 Non-saturated operation VS = 5 V RL = 100 Ω ton 15 toff 10 5 0 0 95 11016 2 4 6 8 10 IC - Collector Current (mA) Fig. 17 - Turn-on/off Time vs. Collector Current For technical questions, contact: [email protected] Document Number: 83886 Rev. 1.4, 08-May-08 CNY17G Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 8.8 max. 7.62 ± 0.1 8.6 max. 0.3 A B 3.3 5.08 max. 0.5 min. 4.2 ± 0.1 6.4 max. 0.58 max. 1.54 0.3 max. 10.16 ± 0.2 2.54 nom. 0.4 B 5.08 nom. A 6 5 4 Weight: ca. 0.50 g Creepage distance: > 8 mm Air path: > 8 mm after mounting on PC board technical drawings according to DIN specifications 1 2 3 Document Number: 83886 Rev. 1.4, 08-May-08 14771 For technical questions, contact: [email protected] www.vishay.com 235 CNY17G Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 236 For technical questions, contact: [email protected] Document Number: 83886 Rev. 1.4, 08-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1