MA-COM MA4GC6772

MA4GC6772
77 GHz GaAs Multi-Throw
PIN Diode Switch
Features
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V 4.00
OD-S-1243
77 Ghz Frequency Response
4.0 dB Insertion Loss
24 dB Isolation
2nS Switching Speed
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Automated Pick and Place Insertion
Qualified for Automotive Environments
Description
M/A-COM’s MA4GC6772 is a Gallium Arsenide Monolithic PIN
Diode Switch designed for 77 GHz Automotive Applications. This
Monolithic Switch performs transmit and receive multiplexing
Functionality.
Port designations are:
1.
2.
3.
4.
3 Antenna Ports (J1, J2, J3) : Transmit/Receive
1 Source Port (J5) : Main VCO Signal Input
1 L.O. Port (J6) : Offset VCO Signal Output
1 Mixer Port (J4) : Mixer Port
Each RF Port contains DC blocking capacitors and a D.C. Bias
Network consisting of High Impedance Lines and RF bypass
capacitors. This device has 100 um square gold plated bonding
pads at all RF and DC ports. RF and DC Ground Backside Gold
Plating allows conventional chip bonding techniques using
80Au/20Sn Solder, Indalloy Solder, or electrically conductive
silver epoxy.
This device is fabricated on OMCVD epitaxial wafers using a
process designed for highly repeatable electrical characteristics and
extremely low device parasitics.
These diodes are fully passivated with Silicon Nitride and have an
additional layer of Polymide for scratch and impact protection.
This protective coating prevents damage to the junction and circuit
during automated or manual assembly.
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
INCHES
MIN.
MAX.
0.0845
0.0855
0.0688
0.0698
0.0341
0.0351
0.0150
0.0160
0.0106
0.0116
0.0229
0.0239
0.0315
0.0325
0.0538
0.0548
0.0168
0.0178
0.0127
0.0137
0.0142
0.0152
0.0035
0.0043
0.004 REF.
0.004 REF.
MILLIMETERS
MIN.
MAX.
2.148
2.172
1.748
1.772
0.868
0.892
0.383
0.407
0.271
0.295
0.583
0.607
0.802
0.826
1.368
1.392
0.428
0.452
0.324
0.348
0.363
0.387
0.090
0.110
0.100 REF.
0.100 REF.
Applications
NOTES
This device has highly reliable, very low parasitic diodes that
allows its use through higher millimeter frequencies for
exceptional loss to isolation ratio multi-throw switch performance.
1. BOND PAD MATERIAL: 2.5 µM THICK GOLD
2. HATCHED AREAS INDICATE BOND PADS
3. BACKSIDE METAL: 1.0 µM THICK GOLD
Typical Applications include Tranceivers, Automotive Cruise
Control Systems, and Radiometry Switch Functions.
77 GHz GaAs Multi-Throw PIN Diode Switch
MA4GC6772
V 4.00
Electrical Specifications, TA = + 25 °C
Parameters
Units
Minimum
Typical
Maximum
Specification Specification Specification
Forward Voltage, +Vf
V
1.15
1.25
Leakage Current, -Ir
nA
-200
-20
DC Slope Resistance
Ω
1.40
Bias Conditions
+10 mA per Diode
-15 V per Diode
4.8
6.4
+10 mA & 11 mA per Diode
Reference Millimeter Wave Data @ F = 77 GHz, TA = + 25 °C
Parameters
Conditions
MA4GC6772
Bias Condition
Avg.
-5 V
+10 mA
Comments
Insertion Loss
J4 to (J1-J3)
J5 to (J1-J3)
J5 to J6
3.8 dB
4.0 dB
2.0 dB
B1, B2, B3, B4
B1, B2, B3, B5
B1, B2, B3, B4
B5
B4
B5
• Receive State
• Transmit State
• Source to LO Loss
Isolation
J4 to (J1-J3)
J5 to (J1-J3)
J1, J2, J3
J5 to J4
24 dB
30 dB
24 dB
35 dB
B1, B2, B3, B5
B1, B2, B3, B4
B1, B2, B3, B4
B4
B5
B5
•
•
•
•
All Ports
1.5:1
Same as Loss
Same as Loss
• Low Loss Condition only (Reflective in
Isolation Mode)
10% - 90%
RF Voltage
2 nS
0 to 5 V TTL
0 to 5 V TTL
• Switching Speed is Driver Dependent
VSWR
Switching Speed
Transmit State
Receive State
At any Switch State
Receive State
Absolute Maximum Ratings1
Parameter
Value
Operating Temperature
-25 °C to +85 °C
Storage Temperature
-65 °C to +150 °C
D.C. Bias Current
+15 mA per Diode
D. C. Reverse Voltage
-15 Volts @ -10 µA
RF C.W. Incident Power
Mounting Temperature
+ 23 dBm C.W.
+300 °C for 10 seconds
1. Exceeding any of these values may result in permanent
damage
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
2
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
77 GHz GaAs Multi-Throw PIN Diode Switch
MA4GC6772
V 4.00
Handling
Solder Die Attach
The following precautions should be observed to avoid
damaging these chips:
All die attach and bonding methods should be compatible with
gold metal. This device utilizes Tungsten metallization under
the gold. Solder which does not scavange gold, such as
80 Au/20 Sn or Indalloy #2 is recommended. Do not expose
die to a temperature greater than 300 °C for more than
10 seconds.
Cleanliness
These chips should be handled in a clean environment. Do not
attempt to clean die after installation.
Static Sensitivity
Proper ESD techniques should be used when handling these
devices.
Electrical Conductive Expoxy
Die Attach
Assembly can be preheated to approximately 125 °C. Use a
controlled thickness of approximately 2 mils for best conductivity and lower thermal resistance. Cure epoxy as per manufacturer’s schedule. For extended cure times, temperatures
should be kept below 150 °C
General Handling
The protective polymer coating on the active areas of these die
provides scratch and impact protection, particularly for the
metal airbridge which contacts the diode’s anode. Die should
primarily be handled with vacuum pickups, or alternatively
with plastic tweezers.
Mounting Techniques
These GaAs devices are designed to be mounted with
electrically conductive silver epoxy or with a lower
temperature solder preform.
Ribbon/Wire Bonding
Wedge thermocompression bonding may be used to attach
ribbons to the bonding pads. Gold ribbons should be ½ x 3 mil
sq. for all RF ports (J1-J6) for lowest inductance.
Ribbon or Wire bonding is recommended for a1l DC ports,
(B1-B5). Use either ½ x 3 mil sq. gold ribbon or 1 mil dia.
gold wire.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020