DC – 6 GHz Unterminated SPDT Switch Technical Data HMMC-2006 Features • Frequency Range: DC-6 GHz SEL1 • Insertion Loss: <1dB @ 6 GHz SEL2 RF OUT2 • Isolation: >70 dB @ 45 MHz >35 dB @ 6 GHz RF OUT1 • Return Loss: >12 dB (Both Input & Output) • Switching Speed: <1 ns • P-1dB: 23 dBm @ 50 MHz >27dBm @ 6 GHz • Harmonics: <-25 dBc @ 20␣ dBm (DC coupled) Chip ID RF IN Description The HMMC-2006 is a GaAs monolithic microwave integrated circuit (MMIC) designed for low insertion loss and high isolation from DC to 6 GHz. It is intended for use as a general-purpose, singlepole, double-throw (SPDT) switch. One series and two shunt MESFETs per throw provide 1.2␣ dB maximum insertion loss and 35 dB minimum isolation at 6␣ GHz. HMMC-2006 chips use through-substrate vias to provide ground connections to the chip backside and minimize the number of wire bonds required. The HMMC-2006 is also available in an 8-lead flatpack (1GG7-4201). 5965-9071E Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 960 x 1070 µm (37.8 x 42.1 mils) +0, -10 µm (+0, -0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) 80 x 80 µm (3.2 x 3.2 mils), or larger Absolute Maximum Ratings[1] Symbol Parameters/Conditions Units Min. Max. V -12 +3 Vsel Select Voltages 1 and 2 Pin RF Input Power Top Operating Temperature °C -55 +125 TSTG Storage Temperature °C -65 +165 Tmax Maximum Assembly Temp. (for 60 seconds max.) °C dBm 30 +300 Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. TA = 25°C except for Tch, TSTG, and Tmax. 7-20 DC Specifications/Physical Properties, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. Il Leakage Current @ -10 V µA Vp Pinch-off Voltage @ 8 mA V -6.75 -3.25 BVgss Breakdown Voltage Total V -18.0 -12.5 100 RF Specifications, TA = 25°C, ZO = 50 Ω, Vsel high = 0 V, Vsel low = -10 V Symbol BW IL Parameters and Test Conditions Guaranteed Operating Bandwidth Insertion Loss, RFin to RFout, Units Min. GHz DC Typ. 6 f = 6 GHz, ON throw dB 1 f = 6 GHz, OFF throw dB 35 40 ISO Isolation, RFin to RFout, RL in Input Return Loss dB 12 14 RL out Output Return Loss dB 12 15 P1 dB Input Power where IL increases by 1 dB dBm 18 23 ts Switching Speed, 10% – 90% RF Envelope, 7-21 f = 50 MHz f = 2 GHz ns Max. 1 1.2 Applications Assembly Techniques The HMMC-2006 can be used in instrumentation, communications, radar, ECM, EW, and many other systems requiring SPDT switching. It can be used for pulse modulation, port isolation, transfer switching, high-speed switching, replacement of mechanical switches, and so on. It can also be used as a terminated SPST (single-pole-single-throw) switch by placing a 50 Ω load on either RF output port. Die attach may be done with either a AuSn solder preform or conductive epoxy. Gold thermosonic bonding is recommended for all bonds. The top and bottom metallization is gold. For more detailed information see HP application note #999 “GaAs MMIC Assembly and Handling Guidelines.” GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices. S-Parameters[1], TA = 25°C, ZO = 50 Ω, Vsel high = 0 V, Vsel low = -10 V Frequency GHz 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 S11 Mag. 0.93 0.0365 0.0372 0.0448 0.0542 0.0631 0.0715 0.0795 0.0872 0.0951 0.1022 0.1074 0.1138 Ang. -8 -27.03 -41.81 -63.14 -80.60 -88.46 -93.98 -101.90 -108.90 -114.40 -120.90 -123.50 -132.70 S21 (Insertion Mag. 4.26 0.9366 0.9336 0.9311 0.9286 0.9271 0.9242 0.9199 0.9164 0.9123 0.9054 0.9032 0.9058 Note: 1. 3-port-wafer-probed data. 7-22 Loss) Ang. 172 -11.32 -17.35 -23.47 -27.67 -29.73 -33.03 -38.93 -45.14 -50.49 -56.36 -62.07 -69.04 S31 (Isolation) Mag. Ang. 0.01 86 0.0010 78.03 0.0017 76.84 0.0026 76.05 0.0033 75.66 0.0039 77.4 0.0049 81.14 0.0059 82.09 0.0063 78.90 0.0068 78.94 0.0078 84.68 0.0084 84.71 0.0115 91.24 RF IN RF OUT RF OUT SEL2 SEL2 Figure 1. HMMC-2006 Schematic. Recommended Operating Conditions, TA = 25°C Select Line RF Path SEL1 SEL2 RF IN to RF OUT1 RF IN to RF OUT2 -10 V 0V Isolated Low Loss 0V -10 V Low Loss Isolated 7-23 HMMC-2006 Typical Performance -14 -40 S21-OFF S21-ON -50 -60 -70 -80 -18 S11 S22 -22 -26 2 4 6 2 4 Figure 3. Input and Output (On Throw) Return Loss[1] vs. Frequency. S23 -50 -60 -70 -80 2 4 6 FREQUENCY (GHz) -40 0 -60 S21-ON -80 0 FREQUENCY (GHz) Figure 2. Insertion Loss[1] vs. Frequency. -50 -70 -30 0 ISOLATION (dB) ISOLATION (dB) RETURN LOSS (dB) INSERTION LOSS (dB) -40 6 FREQUENCY (GHz) Figure 5. Output-to-Output Isolation[2] vs. Frequency. Notes: 1. Wafer-probed measurements 2. Calculated from wafer-probed measurements 7-24 0 2 4 6 FREQUENCY (GHz) Figure 4. Input-to-Output Isolation[1] vs. Frequency. 1070 460 610 SEL1 SEL2 995 960 RF OUT2 880 RF OUT1 730 Chip ID RF IN 0 0 535 Figure 6. HMMC-2006 Bonding Pad Locations. (Dimensions in micrometers) This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local HP sales representative. 7-25 75