SAVANTIC 2SD2129

SavantIC Semiconductor
Product Specification
2SD2129
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·High power switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
3
A
ICM
Collector current-peak
5
A
IB
Base current
0.5
A
PC
Collector dissipation
Ta=25
2
TC=25
20
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD2129
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=1.5A ;IB=3mA
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=3A ;IB=12mA
2.0
V
Base-emitter saturation voltage
IC=1.5A ;IB=3mA
2.0
V
ICBO
Collector cut-off current
VCB=100V; IE=0
100
µA
IEBO
Emitter cut-off current
VEB=6V; IC=0
2.5
mA
hFE-1
DC current gain
IC=1.5A ; VCE=3V
2000
hFE-2
DC current gain
IC=3A ; VCE=3V
1000
VBEsat
CONDITIONS
MIN
TYP.
MAX
100
UNIT
V
15000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=3mA
VCC>30V ,RL=20?
2
1.0
µs
5.0
µs
2.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD2129