SavantIC Semiconductor Product Specification 2SD2129 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 5 A IB Base current 0.5 A PC Collector dissipation Ta=25 2 TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD2129 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=1.5A ;IB=3mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=3A ;IB=12mA 2.0 V Base-emitter saturation voltage IC=1.5A ;IB=3mA 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 100 µA IEBO Emitter cut-off current VEB=6V; IC=0 2.5 mA hFE-1 DC current gain IC=1.5A ; VCE=3V 2000 hFE-2 DC current gain IC=3A ; VCE=3V 1000 VBEsat CONDITIONS MIN TYP. MAX 100 UNIT V 15000 Switching times ton Turn-on time ts Storage time tf Fall time IB1=-IB2=3mA VCC>30V ,RL=20? 2 1.0 µs 5.0 µs 2.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD2129