SavantIC Semiconductor Product Specification 2SD687 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·DARLINGTON ·High DC current gain APPLICATIONS ·Switching applications ·Hammer drive,pulse motor drive ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Maximum absolute ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V 3 A 25 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -50~150 TC=25 SavantIC Semiconductor Product Specification 2SD687 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=4mA 1.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=4mA 2.0 V ICBO Collector cut-off current VCB=60V; IE=0 20 µA IEBO Emitter cut-off current VEB=5V; IC=0 2.5 mA hFE-1 DC current gain IC=1A ; VCE=2V 2000 hFE-2 DC current gain IC=3A ; VCE=2V 1000 40 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time IB1=-IB2=6mA VCC=30V;RL=10= 2 0.1 µs 1.0 µs 0.2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SD687