Inchange Semiconductor Product Specification 2SD1415 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1020 ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V 7 A 0.2 A 30 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1415 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=6mA 0.9 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=7A ;IB=14mA 1.2 2.0 V Base-emitter saturation voltage IC=3A ;IB=6mA 1.5 2.5 V ICBO Collector cut-off current VCB=100V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE-1 DC current gain IC=3A ; VCE=3V 2000 hFE-2 DC current gain IC=7A ; VCE=3V 1000 VBEsat CONDITIONS MIN TYP. MAX 100 UNIT V 15000 Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=6mA VCC=45V ,RL=15Ω Fall time 2 0.8 μs 3.0 μs 2.5 μs Inchange Semiconductor Product Specification 2SD1415 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3