VRF151E 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151E is a thermally-enhanced version of the VRF151. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. M174A FEATURES • Enhanced Package for 30% higher PD • 30:1 Load VSWR Capability at Specified Operating Conditions • Improved Ruggedness V(BR)DSS = 170V • Nitride Passivated • 150W with 22dB Typical Gain @ 30MHz, 50V • Refractory Gold Metallization • 150W with 14dB Typical Gain @ 175MHz, 50V • Replacement for SD2931-10 w/higher BV • Excellent Stability & Low IMD • RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF151E Unit 170 V Continuous Drain Current @ TC = 25°C 16 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 390 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature °C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 170 180 VDS(ON) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) 2.0 Max 3.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) gfs Forward Transconductance (VDS = 10V, ID = 5A) 5.0 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.45 °C/W 1 mA 1.0 μA mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4955 Rev A 10-2009 Thermal Characteristics Dynamic Characteristics Symbol VRF151E Parameter Test Conditions CISS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min Typ VGS = 0V 375 VDS = 150V 200 f = 1MHz 12 Max Unit pF Functional Characteristics Symbol Parameter GPS f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP GPS f = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 150W ηD f 1= 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP Min Typ 18 22 Max dB 14 50 IMD(d3) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP IMD(d11) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP ψ f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 30:1 VSWR - All Phase Angles % -30 1 Unit dBc -60 No Degradation in Output Power Class A Characteristics Symbol Test Conditions GPS IMD(d3) IMD(d9-d13) Min Typ f = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 20 f = 30MHz, VDD = 50V, IDQ(Max) = 3.75A, Pout = 150WPEP -50 f = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP -75 Max dB 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 25 30 14V 10V 250μs PULSE TEST<0.5 % DUTY CYCLE 25 9V TJ= -55°C 7V 8V 15 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 6V 10 5V 5 20 TJ= 25°C 15 TJ= 125°C 10 5 4V 0 0 0 V 4 8 12 16 20 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 100 10 Coss 10 Rds(on) TJ = 125°C TC = 75°C 1 10 20 30 40 DC line 1 Crss 0 Pdmax IDMax ID, DRAIN CURRENT (V) C, CAPACITANCE (pF) 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 20 Ciss 050-4955 Rev A 10-2009 0 50 VDS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage 0.1 1 10 100 Unit 250 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area Typical Performance Curves VRF151E 0.45 0.9 0.40 0.35 0.7 0.30 0.25 0.5 Note: 0.20 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.50 0.3 0.15 t1 t2 0.10 t1 = Pulse Duration t 0.1 0.05 0.05 0 SINGLE PULSE 10-4 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10 -1 10-2 1.0 250 20 Vdd=50V, Idq = 250mA, Freq=150MHz 25 Vdd=50V, Idq = 250mA, Freq=150MHz IM3 30 35 IM5 40 45 50 Vdd=50V 200 OUTPUT POWER (WPEP) IMD, INTERMODULATION DISTORTION (dB) RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration Vdd=40V 150 100 50 55 60 0 50 100 150 Pout, OUTPUT POWER (WATTS PEP) Figure 6. IMD versus POUT 0 200 0 5 10 15 20 25 Pout, INPUT POWER (WATTS PEP) Figure 7. POUT versus PIN 30 30 MHz test Circuit L1 C6 Bias 0-12V C8 C7 T2 C5 + L2 C9 + 50VDC C10 RF Output R1 DUT C4 R3 C2 C1 C3 R2 C1 -- 470 pF Dipped Mica C2, C5, C6 - C9 -- 0.1uF SMT C3 -- 200pF ATC 700C C4 -- 15pF, ATC 700C C10 -- 10uF, 100V Electrolytic L1 - VK200-4B L2 -- 2 Ferrite beads, 2.0 uH R1, R2 -- 51 7, 1 W Carbon R3 -- 3.3 7, 1 W Carbon T1 -- 9:1 Transformer T2 -- 1:9 Transformer 050-4955 Rev A 10-2009 RF Input VRF151E 175 MHz test Circuit RFC1 + 50VDC + L4 Bias 0-12V C11 + R1 C4 RF Input C10 C5 L2 R3 C1 C8 C7 C6 RF Output DUT L1 C3 C9 L3 R2 C2 C1, C2, C8 -- Arco 463 or equivalent C3 -- 25pF, Unelco C4 -- 0.1uF, Ceramic C5 -- 1.0 uF, 15 WV Tantalum C6 -- 250pF, Unelco J101 C7-- 25pF, Unelco J101 C9 -- Arco 262 or equivalent C10 -- 0.05uF, Ceramic C11 -- 15uF, 60WV Electrolytic .5” SOE Package Outline All Dimensions are ± .005 A U M DIM 1 M Q 4 R PIN 1 - SOURCE PIN 2 - GATE PIN 3 - SOURCE PIN 4 - DRAIN 2 B 3 D K 050-4955 Rev A 10-2009 H E C Seating Plane MILLIMETERS MAX MIN MAX A 0.096 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 K 0.435 M J INCHES MIN 11.0 45° NOM 45° NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.