VRF152E 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152E is a thermally-enhanced version of the VRF152. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. M174A FEATURES • Enhanced Package for 30% higher PD • 30:1 Load VSWR Capability at Specified Operating Conditions • Improved Ruggedness V(BR)DSS = 130V • Nitride Passivated • 150W with 22dB Typical Gain @ 30MHz, 50V • Refractory Gold Metallization • 150W with 14dB Typical Gain @ 175MHz, 50V • Drop in Replacement for SD2941-10 • Excellent Stability & Low IMD • RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF152E Unit 130 V Continuous Drain Current @ TC = 25°C 20 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 390 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature °C 200 Static Electrical Characteristics Symbol Parameter Min V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 50mA) 130 RDS(ON) Drain-Source On-State Resistance 1 (VGS = 10V, ID = 10A) Typ Max Unit 0.13 0.20 Ohms V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) 50 μA IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 1.0 μA gfs Forward Transconductance (VDS = 10V, ID = 5A) 5.0 6.2 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.45 °C/W mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4956 Rev A 10-2009 Thermal Characteristics Dynamic Characteristics Symbol VRF152E Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 383 Coss Output Capacitance VDS = 50V 215 Crss Reverse Transfer Capacitance f = 1MHz 20 Max Unit pF Functional Characteristics Symbol Parameter GPS f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP GPS f = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 150W ηD f 1= 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP Min Typ 18 22 Max 14 50 IMD(d3) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP IMD(d11) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP ψ f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 30:1 VSWR - All Phase Angles -30 1 -60 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 40 ID, DRAIN CURRENT (A) 35 30 40 13V 10V 9V 8V 7V 15 6V 10 VGS = 5V 5 0 TJ= -55°C 30 25 20 250μs PULSE TEST<0.5 % DUTY CYCLE 35 ID, DRAIN CURRENT (A) 15V 25 4 8 12 16 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics TJ= 25°C 20 TJ= 125°C 15 10 5 0 0 V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 30 1000 IDMax 20 050-4956 Rev A 10-2009 100 ID, DRAIN CURRENT (A) C, CAPACITANCE Ciss Coss Pdmax 10 Rds(on) 10 0 20 40 60 80 100 120 VDS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage DC line TJ = 125°C TC = 75°C Crss 1 1 dB % dBc No Degradation in Output Power 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone 45 Unit 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area VRF152E Typical Performance Curves 0.45 D = 0.9 0.40 0.35 0.7 0.30 0.25 0.5 Note: 0.20 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.50 0.3 0.15 t1 t2 0.10 t1 = Pulse Duration t 0.1 0.05 0.05 0 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10 -1 10-2 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 0.9 26 250 Vdd=50V, Idq = 250mA, Freq=30MHz 24 200 0.7 0.6 22 0.5 0.4 20 0.3 OUTPUT POWER 30MHz Efficiency and Gain 0.8 0.2 18 150 100 50 0.1 16 0 50 100 150 200 OUTPUT POWER (WATTS PEP) Figure 6. Gain and Efficiency vs Pout 250 14 0 0 0 0.8 1 1.2 1.4 Vdd=50V, Idq = 250mA, Freq=175MHz 200 0. 7 0. 6 0. 5 0. 4 0. 3 0. 2 OUTPUT POWER 150 100 50 0. 1 8 0 50 100 150 200 OUTPUT POWER (WATTS PEP) Figure 8. Gain and Efficiency vs Pout 250 0 0 0 5 10 50 INPUT POWER (WATTS PEP) Figure 9. POUT versus PIN 20 050-4956 Rev A 10-2009 175MHz Efficiency and Gain 0.6 250 0. 8 10 0.4 INPUT POWER (WATTS PEP) Figure 7. POUT versus PIN 0. 9 12 0.2 VRF152E 30 MHz test Circuit 175 MHz test Circuit .5” SOE Package Outline All Dimensions are ± .005 DIM A U M 1 M Q 4 R PIN 1 - SOURCE PIN 2 - GATE PIN 3 - SOURCE PIN 4 - DRAIN 2 B 3 D K 050-4956 Rev A 10-2009 H E C Seating Plane MILLIMETERS MIN MAX MIN MAX A 0.096 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 K 0.435 M J INCHES 11.0 45° NOM 45° NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.