MICROSEMI VRF151

VRF151
50V, 150W, 175MHz
RF POWER VERTICAL MOSFET
The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
M174
FEATURES
• Improved Ruggedness V(BR)DSS = 170V
• 30:1 Load VSWR Capability at Specified Operating Conditions
• 150W with 22dB Typical Gain @ 30MHz, 50V
• Nitride Passivated
• 150W with 14dB Typical Gain @ 175MHz, 50V
• Refractory Gold Metallization
• Excellent Stability & Low IMD
• High Voltage Replacement for MRF151
• Common Source Configuration
• RoHS Compliant
Maximum Ratings
Symbol
VDSS
ID
All Ratings: TC =25°C unless otherwise specified
Parameter
Drain-Source Voltage
VRF151
Unit
170
V
Continuous Drain Current @ TC = 25°C
16
A
VGS
Gate-Source Voltage
±40
V
PD
Total Device dissipation @ TC = 25°C
300
W
TSTG
TJ
Storage Temperature Range
-65 to 150
Operating Junction Temperature
°C
200
Static Electrical Characteristics
Symbol
Parameter
Min
Typ
V(BR)DSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
170
180
VDS(ON)
On State Drain Voltage (ID(ON) = 10A, VGS = 10V)
2.0
Max
3.0
Unit
V
IDSS
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
IGSS
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
gfs
Forward Transconductance (VDS = 10V, ID = 5A)
5.0
VGS(TH)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
2.9
3.6
4.4
V
Min
Typ
Max
Unit
0.60
°C/W
1
mA
1.0
μA
mhos
Symbol
RθJC
Characteristic
Junction to Case Thermal Resistance
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
050-4937 Rev E 12-2007
Thermal Characteristics
Dynamic Characteristics
Symbol
VRF151
Parameter
Test Conditions
CISS
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min
Typ
VGS = 0V
375
VDS = 150V
200
f = 1MHz
12
Max
Unit
pF
Functional Characteristics
Symbol
Parameter
GPS
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
GPS
f = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 150W
ηD
f 1= 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
Min
Typ
18
22
Max
dB
14
50
IMD(d3)
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
IMD(d11)
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
ψ
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
30:1 VSWR - All Phase Angles
%
-30
1
Unit
dBc
-60
No Degradation in Output Power
Class A Characteristics
Symbol
Test Conditions
GPS
IMD(d3)
IMD(d9-d13)
Min
Typ
f = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
20
f = 30MHz, VDD = 50V, IDQ(Max) = 3.75A, Pout = 150WPEP
-50
f = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP
-75
Max
dB
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
25
30
14V
10V
250μs PULSE
TEST<0.5 % DUTY
CYCLE
25
9V
TJ= -55°C
7V
8V
15
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
20
6V
10
5V
5
20
TJ= 25°C
15
TJ= 125°C
10
5
4V
0
0
0
V
4
8
12
16
20
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
FIGURE 1, Output Characteristics
100
10
Coss
10
Rds(on)
TJ = 125°C
TC = 75°C
1
10
20
30
40
DC line
1
Crss
0
Pdmax
IDMax
ID, DRAIN CURRENT (V)
C, CAPACITANCE (pF)
2
4
6
8
10
12
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
20
Ciss
050-4937 Rev E 12-2007
0
50
VDS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
0.1
1
10
100
Unit
250
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
Typical Performance Curves
VRF151
0.6
0.9
0.5
0.7
0.4
0.5
0.3
0.2
t1
t2
t1 = Pulse Duration
0.1
t
0.1
0.05
0
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-4
10-3
10-2
10
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
10-5
IMD, INTERMODULATION DISTORTION (dB)
Note:
PDM
0.3
1.0
250
20
Vdd=50V, Idq = 250mA,
Freq=150MHz
25
Vdd=50V, Idq = 250mA,
Freq=150MHz
IM3
30
35
IM5
40
45
50
Vdd=50V
200
OUTPUT POWER (WPEP)
ZθJC, THERMAL IMPEDANCE (°C/W)
0.7
Vdd=40V
150
100
50
55
60
0
50
100
150
Pout, OUTPUT POWER (WATTS PEP)
Figure 6. IMD versus POUT
0
200
0
5
10
15
20
25
Pout, INPUT POWER (WATTS PEP)
Figure 7. POUT versus PIN
30
30 MHz test Circuit
L1
C6
Bias
0-12V
C8
C7
T2
C5
+
L2
C9
+ 50VDC
C10
RF
Output
R1
DUT
C4
R3
C2
C1
C3
R2
C1 -- 470 pF Dipped Mica
C2, C5, C6 - C9 -- 0.1uF SMT
C3 -- 200pF ATC 700C
C4 -- 15pF, ATC 700C
C10 -- 10uF, 100V Electrolytic
L1 - VK200-4B
L2 -- 2 Ferrite beads, 2.0 uH
R1, R2 -- 51 7, 1 W Carbon
R3 -- 3.3 7, 1 W Carbon
T1 -- 9:1 Transformer
T2 -- 1:9 Transformer
050-4937 Rev E 12-2007
RF
Input
VRF151
175 MHz test Circuit
RFC1
+ 50VDC
+
L4
Bias
0-12V
C11
+
R1
C4
RF
Input
C10
C5
L2
R3
C1
C8
C7
C6
RF
Output
DUT
L1
C3
C9
L3
R2
C2
C1, C2, C8 -- Arco 463 or equivalent
C3 -- 25pF, Unelco
C4 -- 0.1uF, Ceramic
C5 -- 1.0 uF, 15 WV Tantalum
C6 -- 250pF, Unelco J101
C7-- 25pF, Unelco J101
C9 -- Arco 262 or equivalent
C10 -- 0.05uF, Ceramic
C11 -- 15uF, 60WV Electrolytic
.5” SOE Package Outline
All Dimensions are ± .005
A
U
M
DIM
1
M
Q
4
R
PIN 1 - SOURCE
PIN 2 - GATE
PIN 3 - SOURCE
PIN 4 - DRAIN
2
B
3
D
K
050-4937 Rev E 12-2007
H
E
C
Seating Plane
MILLIMETERS
MAX
MIN
MAX
A
0.096
0.990
24.39
25.14
B
0.465
0.510
11.82
12.95
C
0.229
0.275
5.82
6.98
D
0.216
0.235
5.49
5.96
E
0.084
0.110
2.14
2.79
H
0.144
0.178
3.66
4.52
J
0.003
0.007
0.08
0.17
K
0.435
M
J
INCHES
MIN
11.0
45° NOM
45° NOM
Q
0.115
0.130
2.93
3.30
R
0.246
0.255
6.25
6.47
U
0.720
0.730
18.29
18.54
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.