TSOP18..SS3V Vishay Semiconductors Photo Modules for PCM Remote Control Systems Available Types For Different Carrier Frequencies Type fo Type fo TSOP1830SS3V 30 kHz TSOP1833SS3V 33.0 kHz TSOP1836SS3V 36 kHz TSOP1837SS3V 36.7 kHz TSOP1838SS3V 38 kHz TSOP1840SS3V 40.0 kHz TSOP1856SS3V 56 kHz Description The TSOP18..SS3V – series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the reliable function even in disturbed ambient and the protection against uncontrolled output pulses. 16672 Features Special Features Photo detector and preamplifier in one package Internal filter for PCM frequency Small size package Supply voltage 3–6 Volt TTL and CMOS compatibility Enhanced immunity against all kinds of disturbance light Output active low No occurrence of disturbance pulses at the output Improved shielding against electrical field disturbance Short settling time after power on (<200 µs) Suitable burst length 6 cycles/burst Block Diagramm 3 Control Circuit Input 80 k 1 PIN AGC Band Pass VS OUT Demodulator 2 GND 16249 Document Number 82052 Rev. 9, 03–JMay–02 www.vishay.com 1 (7) TSOP18..SS3V Vishay Semiconductors Absolute Maximum Ratings Tamb = 25°C Parameter Test Conditions Symbol Value Unit VS –0.3...6.0 V Supply Voltage (Pin 3) Supply Current (Pin 3) IS 5 mA Output Voltage (Pin 1) VO –0.3...6.0 V Output Current (Pin 1) IO 5 mA Tj 100 °C Storage Temperature Range Tstg –25...+85 °C Operating Temperature Range Tamb –25...+85 °C Junction Temperature Power Consumption (Tamb 85 °C) Ptot 50 mW Soldering Temperature t 10 s, 1 mm from case Tsd 260 °C Basic Characteristics Tamb = 25°C Parameter Test Conditions Supply y Current ((Pin 3)) Symbol Min. VS = 3 V, Ev = 0 ISD VS = 3 V, Ev = 40 klx, sunlight ISH Supply Voltage (Pin 3) VS Transmission Distance Ev = 0, test signal see fig.6, IR diode TSAL6200, IF = 300 mA VOSL Irradiance (30 – 40 kHz) Ee min Ee min Irradiance (56 kHz) Irradiance Ee max Directivity Angle of half transmission distance Max. Unit 0.75 1.0 mA 1.0 3.0 d Output Voltage Low (Pin 1) IOSL = 0.5 mA,Ee = 0.7 mW/m2, f = fo Pulse width tolerance: tpii – 4/fo < tpo < tpii + 5/fo, test signal see fig.6 0.5 Typ. mA 6.0 35 m 250 mV 0.3 0.5 mW/m 2 0.4 0.7 mW/m 2 W/m 2 30 ϕ1/2 V ±45 deg Application Circuit 100 *) 3 TSOP18..SS3V TSAL62.. 4.7 F *) +3 V **) >10 k optional 1 C 2 16686 GND *) recommended to suppress power supply disturbances **) tolerated supply voltage range: 3V < VS < 6 V www.vishay.com 2 (7) Document Number 82052 Rev. 9, 03–May–02 TSOP18..SS3V Vishay Semiconductors Suitable Data Format The circuit of the TSOP18..SS3V is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpassfilter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal (not suppressed) and disturbance signal (supressed) are carrier frequency, burst length and Signal Gap Time (see diagram below). The data signal should fullfill the following condition: • Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). Some examples for suitable data format are: NEC Code (repetitive pulse), NEC Code (repetitive data), Toshiba Micom Format, Sharp Code, RC5 Code, RECS–80 Code, R–2000 Code. When a disturbance signal is applied to the TSOP18..SS3V it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occure. Some examples for such disturbance signals which are suppressed by the TSOP18..SS3V are: • Burst length should be 6 cycles/burst or longer. • DC light (e.g. from tungsten bulb or sunlight), • After each burst a gap time of at least 9 cycles is neccessary. • Continuous signal at 38 kHz or at any other frequency, • The data format should not make a continuous signal transmission. There must be a Signal Gap Time (longer than 25 ms) at least each 150 ms (see figure A) • Signals from fluorescent lamps (see figure B). • Continuous IR signal (e.g. 1 ms burst, 2 ms pause) Signal Gap Time 0 20 40 60 80 100 120 140 time [ms] Figure A: Data Signal (Output of IR Receiver) with a Signal Gap Time of 20ms Signal Gap Time 0 2 4 6 8 10 12 14 16 18 20 time [ms] Figure B: Disturbance Signal from Fluorescent Lamp with Signal Gap Time of 7ms Document Number 82052 Rev. 9, 03–JMay–02 www.vishay.com 3 (7) TSOP18..SS3V Vishay Semiconductors Typical Characteristics (Tamb = 25C, unless otherwise specified) 100.0 Ee min – Threshold Irradiance (mW/m 2 ) E e min / E e – Rel. Responsitivity 1.0 0.8 0.6 0.4 0.2 f = f05% f ( 3dB ) = f0/7 0.0 0.7 0.8 0.9 1.0 1.1 Correlation with ambient light sources (Disturbanceeffect):10W/m21.4klx (Stand.illum.A,T=2855K)8.2klx (Daylight,T=5900K) 3.5 3.0 2.5 2.0 Ambient, = 950 nm 1.5 1.0 0.5 0.0 0.01 0.10 1.00 10.00 100 Hz 0.1 10.0 100.0 1000.0 Figure 4. Sensitivity vs. Supply Voltage Disturbances 1.0 0.9 Sensitivity in dark ambient 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VS – Supply Voltage ( V ) 96 12216 Figure 2. Sensitivity in Bright Ambient Figure 5. Sensitivity vs. Supply Voltage Optical Test Signal Ee Ee min – Threshold Irradiance ( mW/m2 ) 1.0 VsRMS – AC Voltage on DC Supply Voltage (mV) 100.00 E – DC Irradiance (W/m2) 96 12214 1.0 0.1 E e min – Threshold Irradiance (mW/m2 ) E e min – Threshold Irradiance (mW/m2 ) 4.5 10 kHz 1 kHz 96 12215 Figure 1. Frequency Dependence of Responsivity 4.0 10.0 1.3 1.2 f/f0 – Relative Frequency 94 9102 f = fo 2.0 f(E)=f0 1.6 600 s t 600 s TD*) 1.2 Trep=100 ms *) 0.8 VO 0.4 Trep–TD > 25 ms is recommended for optimal function Output Signal, ( see Fig.7 ) 16177 VOH 0.0 0.0 94 8147 0.4 0.8 1.2 1.6 2.0 E – Field Strength of Disturbance ( kV/m ) Figure 3. Sensitivity vs. Electric Field Disturbances www.vishay.com 4 (7) VOL Ton Toff t Figure 6. Output Function Document Number 82052 Rev. 9, 03–May–02 TSOP18..SS3V Vishay Semiconductors Ton 0.7 Is – Supply Current ( mA ) Ton ,Toff – Output Pulse Length (ms) 0.8 0.6 0.5 Toff 0.4 0.3 0.2 0.1 0.0 0.1 1.0 10.0 100.0 1000.0 10000.0 Ee – Irradiance (mW/m2) 16043 2.5 S ( )rel – Relative Spectral Sensitivity Is – Supply Current ( mA ) 0.9 Vs = 3 V 0.7 0.6 0.5 0.4 0.3 0.2 0.1 16044 E e min – Threshold Irradiance (mW/m2 ) 6.0 1.0 0.8 0.6 0.4 0.2 850 950 1150 1050 – Wavelength ( nm ) 94 8408 Figure 11. Relative Spectral Sensitivity vs. Wavelength 0° 1.0 0.8 3.5 4.0 4.5 5.0 5.5 VS – Supply Voltage ( V ) 1.2 0 750 90 Figure 8. Supply Current vs. Ambient Temperature 0.9 3.0 Figure 10. Supply Current vs. Supply Voltage 1.0 0.0 –30 –15 0 15 30 45 60 75 Tamb – Ambient Temperature ( °C ) Supply current in dark ambient 96 12222 Figure 7. Output Pulse Diagram 0.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 10° 20° 30° Sensitivity in dark ambient 0.7 40° 0.6 1.0 0.5 0.9 50° 0.8 60° 0.4 0.3 0.2 70° 0.7 80° 0.1 0.0 –30 –15 0 15 30 45 60 75 96 12221 Tamb – Ambient Temperature ( °C ) 90 Figure 9. Sensitivity vs. Ambient Temperature Document Number 82052 Rev. 9, 03–JMay–02 0.6 96 12223p2 0.6 0.4 0.2 0 0.2 0.4 drel – Relative Transmission Distance Figure 12. Directivity www.vishay.com 5 (7) TSOP18..SS3V Vishay Semiconductors Dimensions in mm 16003 www.vishay.com 6 (7) Document Number 82052 Rev. 9, 03–May–02 TSOP18..SS3V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 82052 Rev. 9, 03–JMay–02 www.vishay.com 7 (7)