TSOP11..SK1 VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP11..SK1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation with short burst transmission codes and high data rates. 13 646 Features • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Improved shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Low power consumption • High immunity against ambient light Special Features • Enhanced data rate up to 4000 bit/s • Operation with short bursts possible (≥ 6 cycles/burst) Parts Table Part Carrier Frequency TSOP1130SK1 30 kHz TSOP1133SK1 33 kHz TSOP1136SK1 36 kHz TSOP1137SK1 36.7 kHz TSOP1138SK1 38 kHz TSOP1140SK1 40 kHz TSOP1156SK1 56 kHz Block Diagram Application Circuit 2 16842 3 Input AGC Band Pass Demodulator OUT 1 PIN Control Circuit GND Transmitter TSOPxxxx with TSALxxxx Circuit 25 kΩ VS R1 = 100 Ω VS OUT GND +VS C1 = 4.7 µF µC VO GND R1 + C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously at a voltage below VO = 3.3 V by the external circuit. Document Number 82159 Rev. 2, 05-May-03 www.vishay.com 1 TSOP11..SK1 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Supply Voltage Parameter (Pin 2) Test condition VS - 0.3 to + 6.0 V Supply Current (Pin 2) IS 5 mA Output Voltage (Pin 3) VO - 0.3 to + 6.0 V Output Current (Pin 3) IO 5 mA Junction Temperature Unit Tj 100 °C Storage Temperature Range Tstg - 25 to + 85 °C Operating Temperature Range Tamb - 25 to + 85 °C Power Consumption (Tamb ≤ 85 °C) Ptot 50 mW Soldering Temperature t ≤ 10 s, 1 mm from case Tsd 260 °C Electrical and Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Supply Current (Pin 2) Symbol Min Typ. Max Unit VS = 5 V, Ev = 0 Test condition ISD 0.8 1.2 1.5 mA VS = 5 V, Ev = 40 klx, sunlight ISH Supply Voltage (Pin 2) 1.5 VS 4.5 Transmission Distance Ev = 0, test signal see fig.3, IR diode TSAL6200, IF = 0.4 A d Output Voltage Low (Pin 3) IOSL = 0.5 mA, Ee = 0.7 mW/m2, f = fo, test signal see fig.1 VOSL Irradiance (30 - 40 kHz) Test signal see fig.1 Ee min Test signal see fig.3 mA 5.5 V 35 m 250 mV 0.4 0.6 mW/m 2 Ee min 0.35 0.5 mW/m 2 Test signal see fig.1 Ee min 0.45 0.7 mW/m 2 Test signal see fig.3 Ee min 0.40 0.6 mW/m 2 Irradiance Test signal see fig.1 Ee max Directivity Angle of half transmission distance Irradiance (56 kHz) 30 W/m 2 ϕ1/2 ± 45 deg Typical Characteristics (Tamb = 25 °C unless otherwise specified) Optical Test Signal (IR diode TSAL6200, IF=0.4 A, N=6 pulses, f=f0, T=10 ms) t tpi *) T *) tpi w 6/fo is recommended for optimal function Output Signal VO 1) 2) VOH VOL 14337 3/f0 < td < 9/f0 tpi – 4/f0 < tpo < tpi + 6/f0 td1 ) tpo2 ) Figure 1. Output Function www.vishay.com 2 t 0.35 t po – Output Pulse Width ( ms ) Ee 0.30 Output Pulse 0.25 0.20 0.15 Input Burst Duration 0.10 l = 950 nm, optical test signal, fig.1 0.05 0.00 0.1 16907 1.0 10.0 100.0 1000.010000.0 Ee – Irradiance ( mW/m2 ) Figure 2. Pulse Length and Sensitivity in Dark Ambient Document Number 82159 Rev. 2, 05-May-03 TSOP11..SK1 VISHAY Vishay Semiconductors Optical Test Signal 600 ms t 600 ms T = 60 ms 94 8134 Output Signal, ( see Fig.4 ) VO VOH VOL Ton 4.0 Ee min– Threshold Irradiance ( mW/m 2 ) Ee 3.0 2.5 2.0 1.5 Ambient, l = 950 nm 1.0 0.5 0.0 0.01 t Toff Correlation with ambient light sources: 10W/m2^1.4klx (Std.illum.A,T=2855K) 10W/m2^8.2klx (Daylight,T=5900K) 3.5 16911 Figure 6. Sensitivity in Bright Ambient 1.0 Ee min– Threshold Irradiance ( mW/m 2 ) Ton ,Toff – Output Pulse Width ( ms ) Figure 3. Output Function 0.9 0.8 Ton 0.7 0.6 0.5 Toff 0.4 0.3 l = 950 nm, optical test signal, fig.3 0.2 0.1 0.0 0.1 1.0 16910 10.0 100.0 1000.010000.0 Ee – Irradiance ( mW/m2 ) 16912 E e min– Threshold Irradiance ( mW/m 2 ) E e min / E e – Rel. Responsivity 1.2 1.0 0.8 0.6 0.4 0.0 0.7 16926 f = f0"5% Df ( 3dB ) = f0/7 0.9 1.1 f/f0 – Relative Frequency Rev. 2, 05-May-03 f = fo 1.5 f = 10 kHz 1.0 f = 1 kHz 0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 1000.0 DVsRMS – AC Voltage on DC Supply Voltage (mV) 2.0 f(E) = f0 1.6 1.2 0.8 0.4 0.0 0.0 1.3 Figure 5. Frequency Dependence of Responsivity Document Number 82159 2.0 Figure 7. Sensitivity vs. Supply Voltage Disturbances Figure 4. Output Pulse Diagram 0.2 0.10 1.00 10.00 100.00 E – Ambient DC Irradiance (W/m2) 94 8147 0.4 0.8 1.2 1.6 2.0 E – Field Strength of Disturbance ( kV/m ) Figure 8. Sensitivity vs. Electric Field Disturbances www.vishay.com 3 TSOP11..SK1 VISHAY Vishay Semiconductors 0° 1.0 10° 20° 30° Max. Envelope Duty Cycle 0.9 0.8 0.7 40° 0.6 1.0 0.5 0.9 50° 0.8 60° 0.4 0.3 f = 38 kHz, Ee = 2 mW/m2 0.2 70° 0.7 80° 0.1 0.0 0 20 40 60 80 100 0.6 120 Burst Length ( number of cycles / burst ) 16914 95 11340p2 Figure 12. Horizontal Directivity ϕx Figure 9. Max. Envelope Duty Cycle vs. Burstlength 0° Ee min– Threshold Irradiance ( mW/m 2 ) 0.6 0.5 0.4 0.2 0 0.2 0.4 0.6 d rel - Relative Transmission Distance 10° 20° 30° Sensitivity in dark ambient 40° 0.4 1.0 0.3 0.9 50° 0.2 0.8 60° 0.1 0.7 70° 80° 16918 0.0 –30 –15 0 15 30 45 60 75 Tamb – Ambient Temperature ( qC ) 90 95 11339p2 S ( l ) rel – Relative Spectral Sensitivity Figure 10. Sensitivity vs. Ambient Temperature 0.6 0.4 0.2 0 0.2 0.4 0.6 d rel - Relative Transmission Distance Figure 13. Vertical Directivity ϕy 1.2 1.0 0.8 0.6 0.4 0.2 0 750 94 8408 850 950 1050 1150 l – Wavelength ( nm ) Figure 11. Relative Spectral Sensitivity vs. Wavelength www.vishay.com 4 Document Number 82159 Rev. 2, 05-May-03 TSOP11..SK1 VISHAY Vishay Semiconductors The circuit of the TSOP11..SK1 is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: • Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). • Burst length should be 6 cycles/burst or longer. • After each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is necessary. • For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the data stream. This gap time should have at least same length as the burst. • Up to 2200 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code, Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, RCMM Code, R-2000 Code, RECS-80 Code. When a disturbance signal is applied to the TSOP11..SK1 it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occur. Some examples for such disturbance signals which are suppressed by the TSOP11..SK1 are: • DC light (e.g. from tungsten bulb or sunlight) • Continuous signal at 38 kHz or at any other frequency • Signals from fluorescent lamps with electronic ballast (an example of the signal modulation is in the figure below). Document Number 82159 Rev. 2, 05-May-03 IR Signal Suitable Data Format IR Signal from fluorescent lamp with low modulation 0 16920 5 10 15 20 Time ( ms ) Figure 14. IR Signal from Fluorescent Lamp with low Modulation www.vishay.com 5 TSOP11..SK1 VISHAY Vishay Semiconductors Package Dimensions in mm 12831 www.vishay.com 6 Document Number 82159 Rev. 2, 05-May-03 TSOP11..SK1 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 82159 Rev. 2, 05-May-03 www.vishay.com 7