FGP30B thru FGP30D Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF(AV) 3.0 A VRRM 100 V to 200 V IFSM 125 A trr 35 ns VF 0.95 V 5.0 µA 175 °C ted* n e t Pa DO-204AC (DO-15) * Glass Encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly to Patent No. 3,930,306 Pr od uc t IR Tj max. Features • • • • • • • ® Mechanical Data Cavity-free glass-passivated junction Ideal for automated placement Ultrafast reverse recovery time Low switching losses, high efficiency High forward surge capability Meets environmental standard MIL-S-19500 Solder Dip 260 °C, 40 seconds Typical Applications Case: GP20, molded epoxy over glass body Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end Maximum Ratings N ew For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and Telecommunication TA = 25 °C unless otherwise specified Symbol FGP30B FGP30C FGP30D Unit Maximum repetitive peak reverse voltage Parameter VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V 100 150 200 V Maximum DC blocking voltage VDC Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 25 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 125 A TJ, TSTG - 65 to + 175 °C Operating junction and storage temperature range Document Number 88878 10-Aug-05 www.vishay.com 1 FGP30B thru FGP30D Vishay Semiconductors Electrical Characteristics TA = 25 °C unless otherwise specified Parameter Test condition Maximum instantaneous forward voltage Symbol at 3.0 A (1) TA = 25 °C TA = 100 °C Maximum DC reverse current at rated DC blocking voltage FGP30B FGP30C FGP30D Unit VF 0.95 V IR 5.0 50 µA Maximum reverse recovery time at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 35 ns Typical junction capacitance at 4.0 V, 1 MHz CJ 70 pF Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle Thermal Characteristics TA = 25 °C unless otherwise specified Parameter Typical thermal resistance Symbol FGP30B RθJA RθJL (1,2) FGP30C FGP30D 55 20 Unit °C/W Notes: (1) Thermal resistance from juction to ambient at 0.375" (9.5 mm) lead length and mounted on P.C.B. with 1.1 x 1.1 (30 x 30 mm) copper pads. (2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsinks. Ratings and Characteristics Curves 3,5 150 Peak Forward Surge Current (A) Average Forward Rectified Current (A) (TA = 25 °C unless otherwise specified) 3 2,5 2 1,5 1 0,5 125 100 75 50 25 0 0 0 25 50 75 100 125 150 175 Ambient Temperature (°C) Figure 1. Maximum Forward Current Derating Curve www.vishay.com 2 TJ = TJ max. 8.3ms Single Half Sine-Wave 1 100 10 Number of Cycles at 60 HZ Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Document Number 88878 10-Aug-05 FGP30B thru FGP30D Vishay Semiconductors 1000 Instantaneous Forward Current (A) 100 10 Junction Capacitance (pF) Tj = 175 °C Tj = 150 °C Tj = 125 °C 1 Tj = 25 °C 0,1 0,01 0,2 0,4 0,6 0,8 1 100 10 1 1,2 0,1 1 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics 100 Figure 5. Typical Junction Capacitance 100 100 Tj = 175 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Leakage Current (µA) 10 Reverse Voltage (V) Tj = 150 °C 10 Tj = 125 °C 1 0,1 0,01 Tj = 25 °C 1 0,01 0,001 20 40 60 80 10 100 0,1 1 10 100 tp-Pulse Duration (sec) Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Figure 6. Typical Transient Thermal Impedance Package outline dimensions in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) Dia. 1.0 (25.4) min. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) Dia. 1.0 (25.4) min. Document Number 88878 10-Aug-05 www.vishay.com 3