PJ06N03D 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), [email protected],IDS@30A=9mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : 06N03D Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e V DS 25 V G a t e - S o ur c e Vo l t a g e V GS +20 V ID 60 A ID M 320 A PD 70 42 W T J , T S TG -5 5 to + 1 5 0 Avalanche Energy with Single Pulse ID=40A, VDD=25V, L=0.5mH E AS 400 Junction-to-Case Thermal Resistance RθJC 1 .8 O C /W Junction-to Ambient Thermal Resistance(PCB mounted)2 RθJA 50 O C /W C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e T A = 2 5 OC T A = 7 5 OC O C mJ Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 PJ06N03D ELECTRICALCHARACTERISTICS P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V G S = 0 V , ID = 2 5 0 u A 25 - - V G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = 2 5 0 u A 1 - 3 V D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=4.5V, ID=30A - 7 .6 9 .0 D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=10V, ID=30A - 4.7 6.0 Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S VDS=25V, VGS=0V - - 1 uA Gate Body Leakage IG S S V GS = + 2 0 V , V D S = 0 V - - +100 nA Forward Transconductance g fS V D S = 1 0 V , ID = 1 5 A 30 - - S V D S = 1 5 V , ID = 1 5 A , V G S = 5 V - 39 - - 72 - - 8 .1 - S ta ti c mΩ D ynami c To t a l G a t e C h a r g e Qg nC V D S = 1 5 V , ID = 1 5 A V GS = 1 0 V G a t e - S o ur c e C ha r g e Qgs G a t e - D r a i n C ha r g e Qgd - 14.2 - Tu r n - O n D e l a y Ti m e T d ( o n) - 17.2 21 - 15 17 - 78 90 Tu r n - O n R i s e Ti m e t rr Tu r n - O f f D e l a y Ti m e VDD=15V , RL=15Ω ID=1A , VGEN=10V RG=3.6Ω t d (o ff) ns Tu r n - O f f F a l l Ti m e tf - 30 42 In p u t C a p a c i t a n c e C iss - 3750 - O ut p ut C a p a c i t a nc e C oss - 650 - R e v e r s e Tr a n s f e r C a p a c i t a n c e C rss - 500 - V D S = 1 5 V , V GS = 0 V f=1 .0 MHZ pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is - - - 65 A V SD IS = 3 0 A , V G S = 0 V - 0 .9 5 1 .2 V V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG STAD-JUN.19.2006 PAGE . 2 PJ06N03D 80 80 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) Typical Characteristics Curves (TA=25OC,unless otherwise noted) V GS =4.0V, 4.5V, 5.0V, 6.0V, 10.0V 60 3.5V 40 3.0V 20 2.5V V DS=10V 60 40 T J=25 OC 20 0 T J=125 OC 0 0 1 2 3 4 5 1 1.5 V DS - Drain-to-Source Voltage (V) R DS(ON) - On-Resistance (m W ) R DS(ON) - On-Resistance (m W ) 3 3.5 30 12.5 10 V GS=4.5V 7.5 V GS=10V 5 2.5 4 4.5 I D=30A 25 20 15 T J=125 OC 10 5 T J=25 OC 0 0 0 10 20 30 40 50 60 70 80 2 90 4 FIG.3- On Resistance vs Drain Current 8 10 FIG.4- On Resistance vs Gate to Source Voltage 5000 V GS=10V I D=30A V GS=0V f=1MH Z C - Capacitance (pF) Ciss 1.3 1.2 1.1 1 0.9 4000 3000 2000 Coss 1000 0.8 Crss 0.7 -50 6 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) RDS(ON) - On-Resistance (Normalized) 2.5 FIG.2- Transfer Characteristic 15 1.4 2 V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic 1.5 T J=-55 OC 0 -25 0 25 50 75 100 125 150 TJ - Junction Tem perature (oC) FIG.5- On Resistance vs Junction Temperature STAD-JUN.19.2006 0 5 10 15 20 25 V DS - Drain-to-Source Voltage (V) FIG.6- Capacitance PAGE . 3 VGS - Gate-to-Source Voltage (V) PJ06N03D Vgs Qg Qsw Vgs(th) 10 V DS =15V I D =15A 8 6 4 2 0 0 Qg(th) Qgs 20 Fig.7 - Gate Charge Waveform I D =250uA 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Tem perature ( C) 60 80 Fig.8 - Gate Charge 32 BVDSS - Breakdown Voltage (V) Vth - G-S Threshold Voltage (NORMALIZED) 1.3 40 Qg - Gate Charge (nC) Qg Qgd I D =250uA 31 30 29 28 27 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 - Threshold Voltage vs Temperature Fig.10 - Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) V GS =0V 10 T J =25 OC T J =125 OC 1 T J =-55 OC 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.11 - Source-Drain Diode Forward Voltage LEGAL STATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.19.2006 PAGE . 4