TSDF2005W Vishay Semiconductors 25 GHz Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low current, low–noise applications, such as in RF front–ends, in analogue and digital cellular and cordless phones,in analogue and digital TV systems (e.g. satellite tuners), in high frequency oscillators up to 12 GHz, in pagers and radar detectors. Features Very low noise figure Low feedback capacitance Very high power gain Emitter pins are thermal leads High transition frequency fT = 25 GHz 1 2 4 3 16712 TSDF2005W Marking: YH2 Plastic case (SOT 343R) 1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector Absolute Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 3.5 V Emitter-base voltage VEBO 1.5 V IC 12 mA Ptot 40 mW Tj 150 °C Tstg –65 to +150 °C RthJA 450 K/W Collector current Total power dissipation Tamb 132 °C Junction temperature Storage temperature range Junction ambient Document Number 85085 Rev. 3, 02–May–02 on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu www.vishay.com 1 (4) TSDF2005W Vishay Semiconductors Electrical DC Characteristics Tamb = 25°C, unless otherwise specified Parameter Test Conditions Symbol Min. Typ. Max. Unit µA Collector cut-off current VCE = 5 V, VBE = 0 ICES 100 Collector-base cut-off current VCB = 5 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1 µA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA VCEsat DC forward current transfer ratio VCE = 2 V, IC = 20 mA hFE Test Conditions Symbol Transition frequency VCE = 2 V, IC = 10 mA, f = 1 GHz fT 25 Collector-base capacitance VCB = 2 V, f = 1 MHz Ccb 0.05 Collector-emitter capacitance VCE = 2 V, f = 1 MHz Cce 0.3 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.3 pF Noise figure VCE = 2 V, IC = 2 mA, ZS = ZSopt, ZL = ZLopt, f = 2 GHz F 1.2 dB Power gain, maximum stable gain VCE = 2 V, IC = 5 mA, Gpe = Gms *) ZS = ZSopt, ZL = ZLopt, f = 2 GHz 21 dB Transducer gain VCE = 2 V, IC = 5 mA, ZS = ZL= 50 Ω, f = 2 GHz | S21e | 2 17 dB Third order intercept point at output VCE = 2 V, IC = 10 mA, ZS = ZL= 50 Ω, f = 2 GHz IP3 15 dBm 1 dB compression point VCE = 2 V, IC = 10 mA, ZS = ZL= 50 Ω, f = 2 GHz P–1dB 5 dBm 3.5 V 0.1 0.25 50 100 150 Min. Typ. Max. V Electrical AC Characteristics Tamb = 25°C, unless otherwise specified Parameter 14 Unit GHz 0.08 pF *) Gms = | S21e/S12e | www.vishay.com 2 (4) Document Number 85085 Rev. 3, 02–May–02 TSDF2005W Vishay Semiconductors Dimensions of TSDF2005W in mm 96 12238 Document Number 85085 Rev. 3, 02–May–02 www.vishay.com 3 (4) TSDF2005W Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 (4) Document Number 85085 Rev. 3, 02–May–02 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.