BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case (TO 50) 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2 30 300 150 –65 to +150 Unit V V V mA mW °C °C Symbol Value Unit RthJA 300 K/W Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 1 (6) BFR90A Electrical DC Characteristics Tj = 25°C, unless otherwise specified Parameters / Test Conditions Collector-emitter cut-off current VCE = 20 V, VBE = 0 Collector-base cut-off current VCB = 15 V, IE = 0 Emitter-base cut-off current VEB = 2 V, IC = 0 Collector-emitter breakdown voltage IC = 1 mA, IB = 0 DC forward current transfer ratio VCE = 10 V, IC = 14 mA Symbol Min. Typ. Max. Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V(BR)CEO 15 V hFE 50 100 150 Symbol Min. Typ. Max. Electrical AC Characteristics Tamb = 25°C Parameters / Test Conditions Transition frequency VCE = 10 V, IC = 14 mA, f = 500 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 10 V, IC = 2 mA, f = 800 MHz, ZS = 50 Power gain VCE = 10 V, IC = 14 mA, ZL = ZLopt, f = 800 MHz Linear output voltage – two tone intermodulation test VCE = 10 V, IC = 14 mA, dIM = 60 dB, ZS = ZL = 50 f1 = 806 MHz, f2 = 810 MHz Third order intercept point VCE = 10 V, IC = 14 mA, f = 800 MHz 2 (6) Unit fT 6 GHz Cce 0.25 pF Ccb 0.3 pF Ceb 0.9 pF F 1.8 dB Gpe 16 dB V1 = V2 120 mV IP3 24 dBm TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 BFR90A Common Emitter S-Parameters Z0 = 50 W S11 VCE/V IC/mA 2 5 5 10 14 20 f/MHz LIN MAG 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 0.90 0.80 0.67 0.52 0.45 0.40 0.34 0.30 0.28 0.77 0.56 0.41 0.30 0.26 0.24 0.21 0.19 0.18 0.61 0.36 0.26 0.20 0.18 0.17 0.16 0.14 0.14 0.51 0.28 0.20 0.17 0.15 0.15 0.14 0.13 0.13 0.41 0.22 0.17 0.15 0.14 0.14 0.14 0.14 0.13 S21 ANG deg –17.7 –50.4 –78.1 –111.2 –128.8 –144.1 –164.2 176.6 165.9 –27.0 –69.4 –97.4 –126.9 –142.7 –155.8 –174.3 167.7 158.7 –38.3 –85.3 –111.7 –139.9 –154.3 –166.5 177.7 160.4 153.6 –44.8 –93.9 –120.2 –147.3 –160.1 –172.1 172.8 155.7 147.1 –53.2 –105.4 –131.2 –156.4 –170.4 177.4 164.4 147.5 141.0 LIN MAG 6.25 5.51 4.66 3.56 2.99 2.58 2.11 1.80 1.64 13.24 9.72 7.01 4.76 3.89 3.29 2.67 2.27 2.06 20.89 12.29 8.10 5.28 4.28 3.61 2.91 2.48 2.26 24.51 13.01 8.36 5.40 4.36 3.69 2.98 2.52 2.29 27.71 13.38 8.45 5.41 4.36 3.68 2.96 2.51 2.28 S12 ANG deg 165.4 140.9 121.6 99.9 89.0 80.3 69.3 59.3 54.2 156.9 125.0 106.7 89.9 81.8 75.1 66.5 58.1 53.8 147.5 113.4 98.2 84.9 78.0 72.3 64.7 57.1 53.1 142.5 108.9 95.3 83.0 76.6 71.3 63.9 56.5 52.8 137.2 104.9 92.6 81.3 75.2 69.8 62.5 55.4 51.5 LIN MAG 0.02 0.05 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.02 0.04 0.05 0.07 0.08 0.10 0.12 0.14 0.16 0.02 0.03 0.05 0.07 0.08 0.10 0.12 0.15 0.17 0.01 0.03 0.05 0.07 0.08 0.10 0.13 0.15 0.17 0.01 0.03 0.04 0.07 0.09 0.10 0.13 0.15 0.17 S22 ANG deg 81.1 65.5 56.7 51.2 51.0 52.1 54.6 57.8 59.4 76.2 63.9 61.8 63.5 64.6 65.7 66.2 66.0 65.5 74.8 67.7 69.4 71.4 71.8 71.6 70.3 68.7 67.5 74.5 71.0 72.9 74.0 74.0 73.4 71.7 69.8 68.3 74.0 74.1 75.6 76.1 75.4 74.5 72.5 70.4 68.8 LIN MAG 0.98 0.91 0.84 0.77 0.75 0.74 0.74 0.75 0.76 0.95 0.79 0.70 0.65 0.64 0.63 0.64 0.66 0.67 0.89 0.68 0.61 0.58 0.58 0.58 0.59 0.61 0.62 0.86 0.65 0.59 0.57 0.57 0.57 0.58 0.60 0.61 0.82 0.62 0.58 0.56 0.56 0.57 0.58 0.59 0.60 ANG deg –6.8 –18.2 –25.8 –33.8 –38.4 –42.7 –49.4 –56.3 –61.0 –10.9 –23.5 –28.5 –34.1 –38.3 –42.5 –49.3 –56.2 –60.6 –15.0 –24.6 –27.5 –32.8 –37.0 –41.5 –48.7 –55.7 –60.4 –16.7 –24.1 –26.2 –31.8 –36.2 –40.7 –48.0 –55.1 –59.8 –18.0 –22.9 –24.8 –30.7 –35.3 –40.0 –47.3 –54.5 –59.3 3 (6) BFR90A Common Emitter S-Parameters Z0 = 50 W S11 VCE/V 5 IC/mA 30 2 5 10 10 14 4 (6) f/MHz 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 LIN MAG 0.30 0.19 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.92 0.87 0.69 0.53 0.45 0.39 0.33 0.29 0.27 0.80 0.58 0.43 0.30 0.26 0.22 0.19 0.17 0.15 0.65 0.39 0.27 0.19 0.17 0.15 0.13 0.18 0.11 0.56 0.31 0.21 0.16 0.14 0.13 0.12 0.11 0.11 S21 ANG deg –67.7 –125.3 –149.8 –171.3 177.6 167.5 156.2 139.1 133.3 –16.7 –47.6 –74.0 –106.0 –122.8 –138.0 –158.2 –177.6 172.2 –24.7 –63.9 –89.9 –117.6 –132.1 –145.9 –163.0 177.9 168.8 –34.2 –77.0 –99.8 –124.7 –138.1 –151.4 –167.7 174.5 165.6 –39.9 –83.1 –104.9 –129.3 –142.2 –155.9 –170.8 169.7 162.3 LIN MAG 29.72 13.17 8.19 5.23 4.21 3.54 2.85 2.41 2.19 6.23 5.55 4.75 3.67 3.10 2.67 2.19 1.87 1.70 13.17 9.89 7.21 4.94 4.04 3.42 2.77 2.36 2.15 20.73 12.60 8.38 5.50 4.45 3.76 3.04 2.58 2.35 24.49 13.40 8.66 5.62 4.55 3.83 3.10 2.63 2.39 S12 ANG deg 131.4 101.2 90.0 79.2 73.3 68.2 60.9 53.8 49.9 166.0 142.1 123.3 101.9 90.9 82.3 71.2 61.2 56.1 158.0 126.8 108.5 91.6 83.4 76.8 68.0 59.8 55.6 149.1 115.1 99.9 86.3 79.4 74.0 66.4 58.8 54.8 144.2 110.5 96.8 84.4 78.0 72.7 65.4 58.1 54.3 LIN MAG 0.01 0.03 0.04 0.07 0.08 0.10 0.126 0.15 0.17 0.01 0.03 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.01 0.03 0.04 0.06 0.07 0.08 0.10 0.12 0.13 0.01 0.03 0.04 0.06 0.07 0.08 0.11 0.13 0.14 0.01 0.03 0.04 0.06 0.07 0.08 0.10 0.13 0.14 S22 ANG deg 74.3 76.3 78.0 77.8 77.1 76.0 73.9 71.7 70.0 80.6 67.1 58.8 54.1 54.4 56.0 59.8 63.6 65.5 77.5 65.7 63.5 65.9 67.5 69.1 70.2 70.7 70.4 74.8 68.7 70.7 73.2 74.3 74.2 74.1 73.1 72.3 74.3 71.4 74.1 76.0 76.3 76.1 75.3 74.0 73.0 LIN MAG 0.78 0.61 0.58 0.57 0.57 0.58 0.59 0.61 0.62 0.98 0.93 0.87 0.82 0.80 0.79 0.80 0.81 0.83 0.96 0.83 0.76 0.72 0.71 0.71 0.72 0.79 0.75 0.92 0.75 0.69 0.67 0.67 0.67 0.68 0.70 0.72 0.89 0.72 0.67 0.66 0.66 0.66 0.68 0.70 0.71 ANG deg –18.4 –20.7 –22.8 –29.0 –33.9 –38.6 –46.1 –53.5 –58.3 –5.7 –15.5 –22.2 –29.5 –33.9 –38.0 –44.3 –50.8 –55.3 –8.8 –19.3 –23.7 –29.2 –33.2 –37.2 –43.6 –50.3 –54.7 –11.8 –19.8 –22.6 –27.8 –31.9 –36.2 –42.7 –49.5 –53.9 –13.1 –19.3 –21.6 –26.9 –31.0 –35.5 –42.2 –49.1 –53.5 TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 BFR90A Dimensions in mm 96 12244 TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 5 (6) BFR90A Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 6 (6) TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96