VISHAY S868T

S868T
Vishay Semiconductors
BIPMIC – Cascadable Silicon Bipolar Amplifier
Electrostatic sensitive device.
Observe precautions for handling.
Applications
W
W
General purpose 50 gain block for narrow and broad
band IF and RF amplifiers in commercial and industrial
applications. The 50 level allows directly to cascade
this amplifier with minimal external circuitry, thus providing a simple, cost effective way to achieve high level
amplification.
Features
D
D
D
D
D High output level
D Low cost surface mount plastic package
D Few external components
Broadband amplification
50
W cascadable gain block
High gain (19 dB @900 MHz)
Low noise figure (2.9 db @900 Mhz)
2
1
13 579
94 9279
3
4
S868T Marking: 868
Plastic case (SOT 143)
1 = RF-output, 2 = Ground,
3 = RF-input, 4 = Ground
Typical biasing configuration
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Device current
RF input power
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 25 °C
Symbol
Ibias
Pin
Ptot
Tj
Tstg
Value
55
20
275
150
–65 to +150
Unit
mA
dBm
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35 m Cu
m
Document Number 85056
Rev. 3, 20-Jan-99
Symbol
RthJA
Value
450
Unit
K/W
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S868T
Vishay Semiconductors
Electrical AC Characteristics
Ibias = 45 mA, f = 900 MHz , Z0 = 50
W, Tamb = 25_C, unless otherwise specified
Parameter
Power gain
3 dB bandwidth
Input VSWR
Output VSWR
Noise figure
Intermodulation distortion
Output power @1dB gain compression
Device voltage
Test Conditions
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
f = 900 MHz
22.5 mV input voltage
Symbol
Gp
f3dB
VSWR
VSWR
F
IM3
P–1dB
Vd
Min
17
Typ
19
0.5
1.8:1
1.8:1
2.9
55
13
5
Max
Unit
dB
GHz
dB
dB
dBm
V
Dimensions of S868T in mm
96 12240
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Document Number 85056
Rev. 3, 20-Jan-99
S868T
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85056
Rev. 3, 20-Jan-99
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