SDP20S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 IF 2x10 nC A P-TO220 the switching behavior • No forward recovery Type SDP20S30 Package P-TO220-3 Ordering Code Q67040-S4419 Marking D20S30 Maximum Ratings, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Continuous forward current, TC=100°C IF 10 RMS forward current, f=50Hz IFRMS 14 Surge non repetitive forward current, sine halfwave IFSM Value Unit A 36 TC=25°C, tp=10ms IFRM 45 IFMAX 100 i 2t value, TC=25°C, tp=10ms ³i2dt 6.5 A²s Repetitive peak reverse voltage VRRM 300 V Surge peak reverse voltage VRSM 300 Power dissipation, single diode mode, TC=25°C Ptot 65 W Operating and storage temperature Tj , Tstg -55... +175 °C Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp=10µs, TC=25°C Rev. 1.5 Page 1 2009-11-25 SDP20S30 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 2.3 Characteristics Thermal resistance, junction - case (per leg) RthJC K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Values min. typ. Unit max. Static Characteristics Diode forward voltage V VF IF=10A, Tj=25°C - 1.5 1.7 IF=10A, Tj=150°C - 1.5 1.9 Reverse current µA IR V R=300V, T j=25°C - 15 200 V R=300V, T j=150°C - 20 1000 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.5 Page 2 2009-11-25 SDP20S30 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Values Unit min. typ. max. Qc - 23 - nC t rr - n.a. - ns AC Characteristics Total capacitive charge 1) V R=200V, IF=10A, diF /dt=-200A/µs, Tj =150°C Switching time2) V R=200V, IF=10A, diF /dt=-200A/µs, Tj =150°C Total capacitance pF C V R=0V, T C=25°C, f=1MHz - 600 - V R=150V, T C=25°C, f=1MHz - 55 - V R=300V, T C=25°C, f=1MHz - 40 - Rev. 1.5 Page 3 2009-11-25 SDP20S30 1 Power dissipation (per leg) 2 Diode forward current (per leg) Ptot = f (TC) IF= f (TC) parameter: Tj≤175 °C 11 70 W A 60 9 50 8 45 7 IF Ptot 55 40 6 35 5 30 25 4 20 3 15 2 10 1 5 0 0 20 40 60 80 100 120 140 0 0 °C 180 TC 20 40 60 80 100 120 140 °C 180 TC 3 Typ. forward characteristic (per leg) 4 Typ. forward power dissipation vs. IF = f (VF) average forward current (per leg) parameter: Tj , tp = 350 µs PF(AV)=f(IF) TC=100°C, d = tp/T 20 32 A W 16 PF(AV) 24 IF 14 12 10 20 d=1 d=0.5 d=0.2 d=0.1 16 -40°C 25°C 100°C 125°C 150°C 8 6 12 8 4 4 2 0 0.6 Rev. 1.5 0.8 1 1.2 1.4 1.6 1.8 0 0 2.2 V VF Page 4 2 4 6 8 10 12 14 18 A IF(AV) 2009-11-25 SDP20S30 5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance (per leg) (per leg)IR=f(VR ) ZthJC = f (t p) parameter : D = t p/T 10 1 2 10 µA SDP20S30 K/W 10 1 ZthJC 10 0 IR 10 0 10 -1 10 -1 10 D = 0.50 10 150°C 125°C 100°C 25°C -2 0.20 0.10 0.05 10 10 -3 10 -4 50 -2 -3 single pulse 0.02 0.01 100 150 V 200 10 -4 -7 10 300 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VR 7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy (per leg) (per leg)C= f(VR) EC=f(V R) parameter: TC = 25 °C, f = 1 MHz 2.5 450 pF µJ 350 C EC 300 1.5 250 200 1 150 100 0.5 50 0 0 10 Rev. 1.5 10 1 10 2 0 0 3 10 V VR 50 100 150 200 V 300 VR Page 5 2009-11-25 SDP20S30 9 Typ. capacitive charge vs. current slope (per leg)Qc=f(diF/dt) parameter: Tj = 150 °C 22 nC 18 IF*2 IF IF *0.5 Qc 16 14 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 A/µs 1000 diF /dt Rev. 1.5 Page 6 2009-11-25 SDP20S30 P-TO220-3-1, P-TO220-3-21 Rev. 1.5 Page 7 2009-11-25 SDP20S30 Rev. 1.5 Page 8 2009-11-25