ETC SCF25C60

SCF25C60
SemiWell Semiconductor
Silicon Controlled Rectifiers
Symbol
3. Gate
Features
▼
○
○
2. Anode
Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 25 A )
◆ Low On-State Voltage (1.3V(Typ.)@ ITM)
◆ Isolation Voltage ( VISO = 1500V AC )
○
1. Cathode
◆
TO-220F
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating
control system.
Absolute Maximum Ratings
Symbol
1
23
( TJ = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
600
V
VDRM
Repetitive Peak Off-State Voltage
IT(AV)
Average On-State Current
Half Sine Wave : TC = 69 °C
16
A
IT(RMS)
R.M.S On-State Current
180° Conduction Angle
25
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
275
A
I2t for Fusing
t = 8.3ms
380
A 2s
I2 t
di/dt
Critical rate of rise of on-state current
50
A/㎲
PGM
Forward Peak Gate Power Dissipation
20
W
1
W
PG(AV)
Forward Average Gate Power Dissipation
Over any 20ms period
IFGM
Forward Peak Gate Current
5
A
VRGM
Reverse Peak Gate Voltage
5.0
V
VISO
Isolation Breakdown Voltage(R.M.S.)
1500
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
TJ
TSTG
Aug, 2003. Rev. 1
A.C. 1 minute
Information offers: http://www.kkg.com.cn
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
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SCF25C60
Electrical Characteristics
Symbol
( TC = 25 °C unless otherwise noted )
Items
Ratings
Conditions
Unit
Min.
Typ.
Max.
─
─
─
─
10
200
㎂
─
─
1.6
V
TC = 25 °C
─
─
15
mA
TC = 25 °C
─
─
1.5
V
0.2
─
─
V
250
─
─
V/㎲
─
2
20
mA
VAK = VDRM
IDRM
Repetitive Peak Off-State
Current
VTM
Peak On-State Voltage (1)
IGT
Gate Trigger Current (2)
VGT
Gate Trigger Voltage (2)
VGD
Non-Trigger Gate Voltage (1)
VAK = 12 V, RL=100 Ω
dv/dt
Critical Rate of Rise Off-State
Voltage
Linear slope up to VD = VDRM 67% ,
Gate open
TJ = 125°C
TC = 25 °C
TC = 125 °C
ITM = 50 A
tp=380㎲
VAK = 6 V(DC), RL=10 Ω
VD = 6 V(DC), RL=10 Ω
TC = 125 °C
IT = 100mA, Gate Open
IH
Holding Current
TC = 25 °C
Rth(j-c)
Thermal Impedance
Junction to case
─
─
2.2
°C/W
Rth(j-a)
Thermal Impedance
Junction to Ambient
─
─
60
°C/W
※ Notes :
1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
2. RGK Current not Included in measurement.
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Information offers: http://www.kkg.com.cn
SCF25C60
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
Max. Allowable Case Temperature [ oC]
140
1
10
VGM(5V)
PG(AV)(1W)
IGM(5A)
Gate Voltage [V]
PGM(20W)
0
10
o
25 C
VGD(0.2V)
-1
10
-1
0
10
1
10
10
2
3
10
4
10
10
120
θ = 180
100
o
80
π
60
2π
θ
40
360°
20
θ
: Conduction Angl e
0
0
5
10
2
4
6
8
10
12
14
16
18
20
Average On-State Current [A]
Gate Current [mA]
Fig 3. Typical Forward Voltage
Fig 4. Thermal Response
On-State Current [A]
o
Transient Thermal Impedance [ C/W]
10
2
10
o
125 C
o
25 C
1
10
0.5
1.0
1.5
2.0
2.5
3.0
1
0.1
0.01
1E-3
-5
10
3.5
-4
-3
10
0
10
1
10
10
0
50
100
o
Junction Temperature[ C]
150
IGT(25 C)
o
1
o
IGT(t C)
o
o
VGT(t C)
-1
10
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
10
VGT(25 C)
10
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
0.1
-50
-2
10
On-State Voltage [V]
1
0.1
-50
0
50
100
150
o
Junction Temperature[ C]
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3/5
SCF25C60
Fig 7. Typical Holding Current
Fig 8. Power Dissipation
o
25
Max. Average Power Dissipation [W]
o
IH(t C)
IH(25 C)
10
1
0.1
-50
0
50
100
o
Junction Temperature[ C]
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150
θ = 180
20
θ = 120
θ = 30
θ = 60
o
o
θ = 90
o
o
o
15
10
5
0
0
2
4
6
8
10
12
Average On-State Current [A]
Information offers: http://www.kkg.com.cn
14
16
18
SCF25C60
TO-220F Package Dimension
Dim.
mm
Typ.
Min.
10.4
6.18
9.55
13.47
6.05
1.26
3.17
1.87
2.57
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Max.
10.6
6.44
9.81
13.73
6.15
1.36
3.43
2.13
2.83
Inch
Typ.
Min.
0.409
0.243
0.376
0.530
0.238
0.050
0.125
0.074
0.101
2.54
5.08
0.100
0.200
2.51
1.25
0.45
0.6
2.62
1.55
0.63
1.0
φ
φ 1
φ 2
0.099
0.049
0.018
0.024
0.103
0.061
0.025
0.039
3.7
3.2
1.5
0.146
0.126
0.059
A
E
F
Max.
0.417
0.254
0.386
0.540
0.242
0.054
0.135
0.084
0.111
I
H
B
φ
φ1
C
φ2
L
G
M
1
2
D
1. Cathode
2. Anode
3. Gate
3
J
N
O
K
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