WINSEMI WCF12C60

WCF12C60
Silicon Controlled Rectifiers
Features
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Repetitive Peak Off-State Voltage:600V
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R.M.S On-State Current (IT(RMS)=12A)
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Low On-State Voltage(1.4V(Typ.)@ITM)
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Isolation Voltage(VISO=1500V AC)
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Parameter
Symbol
Condition
Value
Units
600
V
VDRM
Repetitive Peak Off-State Voltage
IT(AV)
Average On-State Current
Half Sine Wave:TC =78 °C
7.6
A
IT(RMS)
R.M.S On-State Current
180°conduction Angle
12
A
ITSM
Surge on-state Current
120
A
72
A 2s
1/2 Cycle,60Hz,Sine
Wave Non-Repetitive
I2t
I2t for Fusing
t=8.3ms
di/dt
Critical rate of rise of on-state current
50
A/㎲
PGM
Forward Peak Gate Power Dissipation
5
W
0.5
W
PG(AV)
Forward Average Gate Power Dissipation
Over any period
IFGM
Forward Peak Gate Current
2
A
VRGM
Reverse Peak Gate Voltage
5.0
V
VISO
Isolation Breakdown Voltage(R.M.S)
1500
V
Operating Junction Temperature
-40~125
°C
Storage Temperature
-40~150
°C
TJ
TSTG
A.C.1minute
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RθJc
Thermal Resistance Junction to Case
-
-
3.8
℃/W
RθJA
Thermal Resistance Junction to Ambient
-
-
60
℃/W
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WCF12C60
Electrical Characteristics (TC=25℃,unless otherwise noted)
Symbol
IDRM
Parameter
Test Conditions
Repetitive Peak Off-State
VAK=VDRM
Current
VTM
Peak On-State Voltage (1)
IGT
Gate Trigger Current (2)
VGT
Gate Trigger Voltage (2)
VGD
Non-Trigger Gate Voltage (1)
dv/dt
IH
TC=25℃
-
-
10
μA
TC=125℃
-
-
200
μA
-
1.4
1.7
V
-
-
15
mA
-
-
1.5
V
0.2
-
-
V
200
-
-
V/㎲
-
-
20
mA
ITM=20A, tp=380㎲
VAK=6V(DC),RL=10Ω
TC=25℃
VD=6V(DC),RL=10Ω
TC=25℃
Critical Rate of Rise Off-State
Voltage
Value
Units
Min Typ Max
VAK=12V,RL=100Ω TC=125℃
Linear slope up to VD=67%
VDRM, gate open
TJ=125℃
IT=100mA, Gate Open
Holding Current
TC=25℃
*Notes:
1 Pulse Width ≤1.0ms,Duty cycle≤1%
2 RGK Current is not Included in measurement.
2/5
Steady, all for your advance
WCF12C60
Fig.1Gate Characteristics
Fig .2 Maximum Case Temperature
Fig. 3 Typical Forward Voltage
Fig. 4 Thermal Response
Fig.5Typical Gate Trigger Voltage
vs.Junction Temperature
Fig.6Typical Gate Trigger current
vs.Junction Temperature
3/5
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WCF12C60
Fig.7 Typical Holding Current
Fig.8 Power Disspation
4/5
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WCF12C60
TO
-220F Package Dimension
TO-220F
Unit: mm
5/5
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