WCD4C60 Silicon Controlled Rectifiers Features � Repetitive Peak Off-State Voltage : 600V � R.M.S On-State Current ( IT(RMS)= 4 A ) � Low On-State Voltage (1.6V(Typ.) @ ITM) � Isolation Voltage(VISO=1500V AC) General Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. Absolute Maximum Ratings (T = 25°C unless otherwise specified) J Symbol VDRM Parameter Condition Repetitive Peak Off-State Voltage Ratings Units 600 V Average On-State Current(180° Ti =60 °C 1.35 Conduction Angle) Tamb=25 °C 0.9 R.M.S On-State Current(180° Conduction Ti =60 °C Angle) Tamb=25 °C IT(AV) A 4 IT(RMS) A 1.35 1/2 Cycle, 60Hz, Sine ITSM Surge On-State Current 33 A WaveNon-Repetitive I2t I2t for Fusing t =10ms 4.5 A2s di/dt Critical rate of rise of on-state current F=60Hz,Tj=125 °C 50 A/㎲ PGM Forward Peak Gate Power Dissipation 0.5 W 0.2 W 1.2 A 1500 V Operating Junction Temperature -40~125 °C °C Storage Temperature -40~150 °C °C PG(AV) Forward Average Gate Power Dissipation IFGM Forward Peak Gate Current VISO Isolation Breakdown voltage(R.M..S) TJ TSTG Tj=125 °C A,C.1minute Thermal Characteristics Symbol Parameter Value Units RθJC Thermal Resistance Junction to Case(DC) 15 ℃/W RθJA Thermal Resistance Junction to Ambient(DC) 100 ℃/W Rev.A Oct.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WCD4C60 Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions IDRM Repetitive Peak Off-State Current VTM Peak On-State Voltage (1) IGT Gate Trigger Current (2) VD=12V,RL=140 Gate Trigger Voltage (2) VGD Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State dv/dt Units Min Typ Max - - 10 μA - - 1 mA - 1.6 1.8 V - - 15 mA - - 1.5 V VAK=VDRM RGK=1KΩ ITM=8A, tp=380㎲ VGT Value VD=12V,RL=3.3KΩ, RGK=1 KΩ 0.1 V VD=67%VDRM, RGK=1 KΩ 200 - - V/㎲ Voltage IH Holding Current IT=50mA, RGK=1 KΩ - - 20 mA IL Latching Current IT=1mA, RGK=1 KΩ 6 - - mA Rd Dynamic resistance Tj=125°C - - 100 mΩ Note: 1. Pulse Width = 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement 2/5 Steady, keep you advance WCD4C60 Fig . 1 Average and D.C.on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) Fig. 2Maximum average power dissipation versus average on-state current Fig. 3 Relative variation of gate trigger current And holding current versus junction temperature Fig. 4Surge peak on-state current versus Number of cycles. Fig.5 Fig.5Relative variation of dV/dt immunity Versus gate-cathode resistance(typical values) Fig.6 Relative Variation of dV/dt immunity Versus gate-cathode resistance(typical values) 3/5 Steady, keep you advance WCD4C60 Fig.7 On-state Characteristics (maximum values) Fig.8 Thermal Resistance junction to ambient Versus copper surface under tab (Epoxy printed Circuit board FR4,copper thickness:35mm) 4/5 Steady, keep you advance WCD4C60 TO -252 Package Dimension TO-252 Unit: mm 5/5 Steady, keep you advance